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51. 发明专利

JP2007142364A Magnetoresistance effect element, magnetic random access memory, electronic card and electronic device 有权
标题翻译：磁阻效应元件，磁性随机存取存储器，电子卡和电子设备
公开(公告)号：JP2007142364A
公开(公告)日：2007-06-07
申请号：JP2006172845
申请日：2006-06-22
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , NAKAYAMA MASAHIKO , KAI TADASHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To maintain a thermal agitation resistance with high bit information and realize a large capacity, even if a memory cell is fined. SOLUTION: A magnetoresistance effect element is provided with: a fixed layer 12 which has a first magnetization 22 directed in a direction perpendicular to a film surface; a recording layer 11 which has a second magnetization 21 directed in a direction perpendicular to the film surface, in which a direction of the second magnetization 21 is reversible by a spin-polarized electron; and a nonmagnetic layer 13 which is provided between the fixed layer 12 and the recording layer 11 and has a first surface facing to the fixed layer 12 and a second surface facing to the recording layer 11. A saturation magnetization Ms of the recording layer 11 satisfies a relation 0≤Ms COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使存储单元被罚款，为了保持具有高位信息的热搅拌电阻并实现大容量。解决方案：磁阻效应元件设置有：固定层12，其具有指向垂直于膜表面的方向的第一磁化22; 记录层11具有在垂直于膜表面的方向上的第二磁化强度21，其中第二磁化强度21的方向由自旋极化电子可逆; 以及设置在固定层12和记录层11之间并具有面向固定层12的第一表面和面向记录层11的第二表面的非磁性层13.记录层11的饱和磁化强度Ms满足写入电流密度为Jw时，关系为0≤Ms<√äJw/（6πAt）}，记录层11的膜厚度为t，常数为A.A是g'×e×α/（h / 2π×g），其中g'是g因子，e是电量的量子，α是吉尔伯特的倾倒常数，h是普朗克常数，g是当第一和第二磁化22,21是平行排列。版权所有（C）2007，JPO＆INPIT

52. 发明专利

JP2007005555A Magnetoresistive-effect element and magnetic random-access memory 有权
标题翻译：磁感应元件和磁性随机存取存储器
公开(公告)号：JP2007005555A
公开(公告)日：2007-01-11
申请号：JP2005183718
申请日：2005-06-23
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , NAGASE TOSHIHIKO , IKEGAWA SUMIO , NISHIYAMA KATSUYA , YOSHIKAWA MASAHISA
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To propose a magnetoresistive-effect element capable of making an improvement in a heat resistance and the improvement in an MR ratio compatible. SOLUTION: The magnetoresistive-effect element has a first surface and a second surface, and has a first magnetic layer 113 having a first standard-electrode potential V, a second magnetic layer 111, and a barrier layer 112 formed between the first surface of the first magnetic layer 113 and the second magnetic layer 111. The magnetoresistive-effect element further has a cap layer 114 brought into contact with the second surface of the first magnetic layer 113 formed of the alloy of a first metallic material M1 having a second standard-electrode potential V1 lower than the first standard-electrode potential V, and a second metallic material M2 having a third standard-electrode potential V2 higher than the first standard-electrode potential V and composed of a non-magnetic material. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提出能够提高耐热性和改善MR比的兼容性的磁阻效应元件。解决方案：磁阻效应元件具有第一表面和第二表面，并且具有第一磁性层113，其具有第一标准电极电位V，第二磁性层111和形成在第一和第二表面之间的阻挡层112 第一磁性层113和第二磁性层111的表面。磁阻效应元件还具有与第一金属材料M1的合金形成的第一磁性层113的第二表面接触的盖层114，第一金属材料M1具有第二标准电极电位V1低于第一标准电极电位V，第二金属材料M2具有比第一标准电极电位V高的第三标准电极电位V2并由非磁性材料构成。版权所有（C）2007，JPO＆INPIT

53. 发明专利

JP2005340366A Magnetic storage device and its manufacturing method 审中-公开
标题翻译：磁储存装置及其制造方法
公开(公告)号：JP2005340366A
公开(公告)日：2005-12-08
申请号：JP2004154885
申请日：2004-05-25
申请人： Toshiba Corp , 株式会社東芝
发明人： KAJIYAMA TAKESHI , UEDA TOMOMASA , KISHI TATSUYA , AIKAWA HISANORI , YOSHIKAWA MASAHISA
IPC分类号： H01L27/105 , H01L21/8246 , H01L27/22 , H01L31/113 , H01L43/08
CPC分类号： H01L27/228 , B82Y10/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage device and its manufacturing method capable of being improved in reliability thereof.
SOLUTION: The magnetic storage device includes a magnetoresistive effect element MTJ provided on a first writing wiring WL. The first writing wiring includes a wiring layer 37 embedded and formed in a groove in an insulating layer 34, and a barrier metal layer 38 embedded and formed in the groove on the wiring layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供能够提高其可靠性的磁存储装置及其制造方法。解决方案：磁存储器件包括设置在第一写入布线WL上的磁阻效应元件MTJ。第一写入布线包括嵌入并形成在绝缘层34中的沟槽中的布线层37和嵌入并形成在布线层上的沟槽中的阻挡金属层38。版权所有（C）2006，JPO＆NCIPI

54. 发明专利

JP2005260082A Magnetic random access memory 审中-公开
标题翻译：磁性随机存取存储器
公开(公告)号：JP2005260082A
公开(公告)日：2005-09-22
申请号：JP2004071390
申请日：2004-03-12
申请人： Toshiba Corp , 株式会社東芝
发明人： KAJIYAMA TAKESHI , UEDA TOMOMASA , KISHI TATSUYA , AIKAWA HISANORI , YOSHIKAWA MASAHISA , ASAO YOSHIAKI , YODA HIROAKI
IPC分类号： H01L27/105 , G11B5/33 , G11C11/14 , G11C11/16 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To shorten a distance between a line to write data in and an MTJ in a damascine structure while at the same time keeping the reliability, in a magnetic random access memory having a cell array structure wherein an interlayer is formed on an MTJ element by a damascine process through a cap layer.
SOLUTION: On the MTJ element MTJ, the cap layer 16 is arranged. An insulation layer 15 covers the MTJ element MTJ and the cap layer 16, and its top face is flush with that of the cap layer 16. On top of the insulation layer 15, the other insulation layer 19 is arranged. The insulation layer 19 has an interconnection recess 20 above the cap layer 16. A write bit line 25 is arranged in the interconnection recess 20. An insulation layer 18 has etch selectivity with respect to at least the insulation layers 15 and 19, and is located between the insulation layers 15 and 19, except on the bottom of the interconnection recess 20.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了缩短在写入数据的行和大马士革结构中的MTJ之间的距离，同时保持可靠性，在具有单元阵列结构的磁性随机存取存储器中，其中中间层是通过帽层通过大马士革过程在MTJ元件上形成。解决方案：在MTJ元件MTJ上，布置盖层16。绝缘层15覆盖MTJ元件MTJ和盖层16，并且其顶面与盖层16的顶面齐平。在绝缘层15的顶部上布置另一绝缘层19。绝缘层19在覆盖层16上方具有互连凹槽20.写入位线25布置在互连凹槽20中。绝缘层18至少相对于绝缘层15和19具有蚀刻选择性，并且位于绝缘层15和19之间，除了互连凹槽20的底部之外。版权所有（C）2005，JPO＆NCIPI

55. 发明专利

JP2005019464A Magnetic random access memory, electronic card, and electronic device 有权
标题翻译：磁性随机存取存储器，电子卡和电子设备
公开(公告)号：JP2005019464A
公开(公告)日：2005-01-20
申请号：JP2003178417
申请日：2003-06-23
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , YODA HIROAKI , YOSHIKAWA MASAHISA , KAI TADASHI , KISHI TATSUYA , AIKAWA HISANORI , UEDA TOMOMASA
IPC分类号： G06K19/077 , G11C11/14 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To provide a magnetic random access memory (MRAM) that is improved in thermal agitation resistance and writing efficiency by lowering the value of a writing current and securing thermal agitation resistance of bit information. SOLUTION: In the MRAM, "0" and "1" bits corresponding to information are written in the recording layer of one of the magnetic layers of an MTJ element having two magnetic layers pinching a nonmagnetic layer by changing the direction of magnetization of the recording layer, by generating an induced magnetic flux by making a current to flow to closely arranged writing wiring in the MTJ element, in a state where the "0" and "1" bits corresponding to the information are made corresponding to the resistance value of the MJT element which changes depending upon the arranged state of the magnetization of the two magnetic layers. The MTJ element 10 is a vertical MTJ element in which the directions of magnetization of the magnetic layers 11 and 12 are directed perpendicularly to the surfaces of the layers 11 and 12. The writing wiring 30 is arranged perpendicularly to the thickness direction of the MTJ element 10, and impresses a generated magnetic field upon the magnetic layers 11 and 12 of the element 10 in the directions of magnetization. Magnetic yokes 20 pinch the MTJ element 10 in the thickness direction, and impress the magnetic field generated by the writing wiring 30 upon the magnetic layers 11 and 12 of the element 10. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供通过降低写入电流的值并确保位信息的热搅拌电阻来提高耐热搅拌电阻和写入效率的磁性随机存取存储器（MRAM）。解决方案：在MRAM中，对应于信息的“0”和“1”位被写入通过改变磁化方向的具有两个磁性层夹持非磁性层的MTJ元件的磁层之一的记录层中通过使电流流向MTJ元件中紧密排列的写入布线而产生感应磁通的状态，其中对应于信息的“0”和“1”位对应于电阻 MJT元件的值根据两个磁性层的磁化的布置状态而变化。 MTJ元件10是垂直的MTJ元件，其中磁性层11和12的磁化方向垂直于层11和12的表面。书写布线30布置成垂直于MTJ元件的厚度方向并且在磁化方向上将元件10的磁性层11和12上产生的磁场印制。磁轭20在厚度方向上挤压MTJ元件10，并将由写入布线30产生的磁场施加到元件10的磁性层11和12上。（C）2005，JPO＆NCIPI

56. 发明专利

JP2003060263A Magnetoresistive effect element, magnetic head, and magnetic reproducer 有权
标题翻译：磁感应元件，磁头和磁性复制器
公开(公告)号：JP2003060263A
公开(公告)日：2003-02-28
申请号：JP2001246583
申请日：2001-08-15
申请人： Toshiba Corp , 株式会社東芝
发明人： YUASA HIROMI , KAMIGUCHI YUZO , YOSHIKAWA MASAHISA , KOUI KATSUHIKO , IWASAKI HITOSHI , NAGATA TOMOHIKO , SAKAKUBO TAKEO , SAHASHI MASASHI
IPC分类号： G01R33/09 , G11B5/00 , G11B5/39 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element with a large variation range in resistance, a magnetic head with the magnetoresistive effect element, and a magnetic reproducer with respect to a vertical conducting type magnetoresistive element having a pin valve structure. SOLUTION: In a spin valve type element, an interface insertion layer (32 or 34), made of material with large spin dependent interface scattering, is inserted at a magnetized fixed layer (16) or a magnetized free layer (20) on the side of a nonmagnetic intermediate layer (18). In addition, when a nonmagnetic back face layer (36) is inserted in an interface on the side which is not in contact with the nonmagnetic intermediate layer, a spin-dependent interface scattering at an interface of magnetized fixed layer/nonmagnetic back face layer or at an interface of magnetized free layer/nonmagnetic back face layer is available, and the output can be increased.
摘要翻译：要解决的问题：提供一种电阻变化范围大的磁阻效应元件，具有磁阻效应元件的磁头和相对于具有销阀结构的垂直导电型磁阻元件的磁性再现器。解决方案：在自旋阀型元件中，由具有大自旋相关界面散射的材料制成的界面插入层（32或34）插入在磁化固定层（16）或侧面上的磁化自由层（20）的非磁性中间层（18）。此外，当非磁性背面层（36）插入在与非磁性中间层不接触的一侧的界面中时，在磁化固定层/非磁性背面层的界面处的自旋相关界面在磁化自由层/非磁性背面层的界面是可用的，并且可以增加输出。

57. 发明专利

JP2002319112A MAGNETO-RESISTIVE EFFECT HEAD AND PERPENDICULAR MAGNETIC RECORDING/REPRODUCING DEVICE 审中-公开
公开(公告)号：JP2002319112A
公开(公告)日：2002-10-31
申请号：JP2002026029
申请日：2002-02-01
申请人： TOSHIBA CORP
发明人： YOSHIKAWA MASAHISA , KAMIGUCHI YUZO , TAKAGISHI MASAYUKI , YUASA HIROMI
IPC分类号： G11B5/39 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistive effect head wherein a gap is narrowed corresponding to a high increasing record density. SOLUTION: The magneto-resistive effect head is provided with a first magnetic free layer 23 and a second magnetic free layer 25 having film surfaces arranged substantially vertical to a medium opposite surface, an intermediate layer 24 held between these magnetic free layers, a substrate layer 31, and a protective layer 32. The substrate layer, the first magnetic free layer, the intermediate layer, the second magnetic free layer, and the protective layer are sequentially laminated in this order. The magneto-resistive effect head is further provided with a magneto-resistive effect film for independently changing their magnetization directions in accordance with a signal of a magnetic flux from a medium, and exerting a magneto-resistive effect in accordance with the changes of the magnetization directions, a first electrode 22 installed to conduct current substantially vertically to the surface of the magneto-resistive effect film, and electrically connected to the substrate layer, and a second electrode 27 electrically connected to the protective layer.

58. 发明专利

JP2002305338A VERTICAL-CONDUCTION-TYPE MAGNETIC RESISTANCE EFFECTIVE ELEMENT, MAGNETIC HEAD, AND MAGNETIC RECORDING/ REPRODUCING APPARATUS 审中-公开
公开(公告)号：JP2002305338A
公开(公告)日：2002-10-18
申请号：JP2001398384
申请日：2001-12-27
申请人： TOSHIBA CORP
发明人： FUNAYAMA TOMOKI , TAKAGISHI MASAYUKI , YOSHIKAWA MASAHISA , TATEYAMA KOICHI
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic head including a vertical-conduction-type magnetoresistance effect element that can reduce the influence due to a vertical conduction magnetic field. SOLUTION: A magnetic resistance effect film (1), an electrode (1), and a bias application film (3) are provided. The electrode (2) is arranged so that current is vertically energized onto the surface of the magnetoresistance effect film (1). The bias application film (3) is formed near the magnetoresistance effect film (1), and gives a bias magnetic filed in a specific direction to the magnetoresistance effect film (1). At a side where the signal flux of the magnetoresistance effect film (1) flows in, the direction of a magnetic field in the bias application film (3) and the direction of the magnetic field generated by the current are not in parastate. Cancellation is made by the bias magnetic field and a sense current one at a portion where medium flux flows into a sensor magnetism detection section, thus suppressing reduction in permeability at the portion, and hence increasing the sensitivity of a sensor.

59. 发明专利

JP2002299726A MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING DEVICE, AND MAGNETIC STORAGE DEVICE 失效
公开(公告)号：JP2002299726A
公开(公告)日：2002-10-11
申请号：JP2001099360
申请日：2001-03-30
申请人： TOSHIBA CORP
发明人： YOSHIKAWA MASAHISA , SAHASHI MASASHI , KOUI KATSUHIKO , IWASAKI HITOSHI , YUASA HIROMI , FUKUZAWA HIDEAKI
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a vertical energizing type magnetoresistive effect element that can obtain a high MR changing rate and MR changing quantity without being out of scaling low even in a CPP-SV element of submicron size, a magnetic head, a magnetic reproducing device and a magnetic storage device to which they are mounted. SOLUTION: A sidewall layer, that is made of highly resistant oxide, nitride, fluoride, boride, sulfide, or carbide having mirror reflection effect with respective to conduction electrons, is provided to the side surface of at least a magnetized adherence layer and a non-magnetic intermediate layer in a magnetoresistance effect film, thus preventing inelastic scattering of electrons or loss of spin information on the side surface of the magnetoresistance effect film. Furthermore, branching of sense current can be also prevented.

60. 发明专利

JPH10214407A MANUFACTURE OF MAGNETIC HEAD AND MANUFACTURE OF ELECTRONIC PART 失效
公开(公告)号：JPH10214407A
公开(公告)日：1998-08-11
申请号：JP32835997
申请日：1997-11-28
申请人： TOSHIBA CORP
发明人： YODA HIROAKI , HASHIMOTO SUSUMU , HARA MICHIKO , NAGATA TOMOHIKO , HORI AKIO , OSAWA YUICHI , KOIZUMI TAKASHI , YOSHIKAWA MASAHISA , SAHASHI MASASHI
IPC分类号： G11B5/31 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To manufacture a thin film magnetic head having a narrow track structure in high-precision in which counter widths of the magnetic gap between a lower magnetic pole and an upper magnetic pole are made roughly the same after allowing the head to satisfy a satisfactory head characteristic and mass-productivity. SOLUTION: In manufacturing a thin film magnetic head in which an upper magnetic pole is formed on a lower magnetic pole 7 with a magnetic gap 12, at first, at least a protruding part 11 corresponding to a recording track is formed in the lower magnetic pole 7 and it becomes, for example, the top end part 11 of the lower magnetic pole. A non-magnetic material layer 13 is formed along the shape of the protruding part 11 of the lower magnetic pole 7. A flatening layer 21 is formed on the non- magnetic material layer 13. The non-magnetic material layer 13 is etched by making this flatening layer 21 a mask. Moreover, a recessing part 14 which is self-matched with the top end part (protruding part) 11 of the lower magnetic pole is formed in the non-magnetic material layer 13. A magnetic layer (the top part of the upper magnetic pole) becoming one part of the upper magnetic pole is formed in this recessing part 14.

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