会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • 磁気抵抗効果素子、磁気ヘッドおよび磁気記録再生装置
    • 磁感应元件,磁头和磁记录装置
    • JP2015026412A
    • 2015-02-05
    • JP2013156034
    • 2013-07-26
    • 株式会社東芝Toshiba Corp
    • SHIRATORI SATOSHIKAMIGUCHI YUZOTAKAGISHI MASAYUKISUGIMURA SHINOBUIWASAKI HITOSHI
    • G11B5/39H01L29/82
    • G11B5/398G11B5/3909G11B5/3912G11B5/3929G11B2005/3996H01L43/02Y10T428/1121
    • 【課題】出力電圧を増大することができるとともにシールド間のギャップを狭めることができる磁気抵抗効果素子、磁気ヘッドおよび磁気記録再生装置を提供する。【解決手段】非磁性導電層11と、前記非磁性導電層の一方の端面の近傍に接合する第1磁性層12と、前記第1磁性層から離れて設けられ前記非磁性導電層に接合する第2磁性層13aと、前記非磁性導電層に接合する第3磁性層13bと、前記第1磁性層に接続する第1磁性電極40と、前記第2磁性層に接続する第2磁性電極と、前記第3磁性層に接続し、かつ前記第3磁性層、前記非磁性導電層、および前記第1磁性層を介して前記第1磁性電極との間で電圧が印加可能であるとともに前記第3磁性層、前記非磁性導電層、および前記第2磁性層を介して前記第2磁性電極との間で電流を流すことが可能な第3磁性電極と、を備え、前記非磁性導電層は、前記一方の端面に向かって体積が減少する形状を有する。【選択図】図1
    • 要解决的问题:提供能够增加输出电压并使屏蔽间隙变窄的磁阻效应元件及其磁头及其磁记录装置。解决方案:磁阻效应元件包括非磁性导电层11; 第一磁性层12,其连接到非磁性导电层的一端附近; 第二磁性层13a,其与第一磁性层分离设置,并与非磁性导电层接合; 连接到非磁性导电层的第三磁性层13b; 与第一磁性层连接的第一磁极40; 与第二磁性层连接的第二磁极; 以及第三磁极,其与第三磁性层连接,经由第三磁性层,非磁性导电层和第一磁性层可以在第一磁极之间施加电压,并且电流可以通过该第三磁性层 从第二磁性电极经由第三磁性层,非磁性导电层和第二磁性层进料。 非磁性导电层的体积朝向一端减小的形状。
    • 2. 发明专利
    • Magnetoresistive effect element and reproduction head
    • 电磁效应元件和复制头
    • JP2005286223A
    • 2005-10-13
    • JP2004100606
    • 2004-03-30
    • Toshiba Corp株式会社東芝
    • KAMIGUCHI YUZO
    • G11B5/39H01L43/08
    • PROBLEM TO BE SOLVED: To achieve superior error rate, even at high recording density.
      SOLUTION: The element has a magnetization-free layer 2 having two main surfaces opposed to each other, one of which is a medium-facing surface; an intermediate layer 4 formed on a surface at a side opposite to the medium-facing surface of the magnetization-free layer, in a manner of being contacted to the magnetization free layer; a pair of magnetization-fixing layers in a manner of being contacted to the intermediate layer and extending outwardly; and a ring-type shield 30, that covers both side faces in a medium running direction of the magnetization-free layer and the surface on the side opposite to the medium-facing surface of the magnetization-free layer; and is configured such that a sensing current flows between the magnetization-free layer and the pair of magnetization fixing layers.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:即使在高记录密度下也能实现优异的误码率。 解决方案:元件具有无磁化层2,其具有彼此相对的两个主表面,其中一个是面向中间的表面; 与无磁化层接触的方式形成在与无磁化层的与中间面相反侧的表面上的中间层4; 一对磁化固定层,其以与中间层接触并向外延伸的方式; 以及环形屏蔽件30,其覆盖无磁化层的介质运行方向和与无磁化层的与介质相对表面相反的一侧的表面的两个侧面; 并且被配置为使得感测电流在无磁化层和一对磁化固定层之间流动。 版权所有(C)2006,JPO&NCIPI
    • 7. 发明专利
    • MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RECORDER
    • JP2000252548A
    • 2000-09-14
    • JP37403399
    • 1999-12-28
    • TOSHIBA CORP
    • KAMIGUCHI YUZOYUASA HIROMISAHASHI MASASHIIWASAKI HITOSHI
    • G11B5/39H01L43/08
    • PROBLEM TO BE SOLVED: To secure magnetic coupling of ferromagnetic metallic layers and to obtain an excellent magnetized stuck surface, causing mirror reflection of electrons to occur, by providing a nonmetallic layer as an electron reflecting layer in the middle of the magnetized stuck layer, and laminating two kinds of layers as a backing for the nonmetallic layer. SOLUTION: By forming a nonmetallic layer 50 on a second magnetic layer 40 first of all, mirror reflection of electrons is caused to occur between these layers. As the result of this, it becomes possible to reduce the loss of momentum of the electrons. In addition, it becomes possible to cause mirror reflection of electrons to occur even at the interface between a second ferromagnetic metallic layer 26 and a nonmetallic layer 24, by forming the nonmetallic layer 24 in the middle of a first magnetized layer 20. Accordingly, it is possible to cause electron reflection to occur even at an interface of a magnetic layer above or below a current path, in spite of using a metallic antiferromagnetic substance. Consequently, it becomes possible to minimize the loss of momentum of electrons, and to obtain an excellent bias magnetic field property, using the antiferromagnetic substance.
    • 9. 发明专利
    • MAGNETORESISTANCE EFFECT DEVICE
    • JPH10150232A
    • 1998-06-02
    • JP25216897
    • 1997-09-17
    • TOSHIBA CORP
    • KAMIGUCHI YUZOSAHASHI MASASHI
    • G01R33/09H01L43/08
    • PROBLEM TO BE SOLVED: To provide a magnetoresistance effect device which is high in output power and possessed of an amplifying function. SOLUTION: A magnetoresistance effect device is equipped with an N-type emitter layer 3, a P-type base layer 2, and an N-type collector 4 which are formed so as to constitute a PN junction respectively, an emitter ferromagnetic layer 5 formed coming into contact with the N-type emitter layer 3, a base ferromagnetic layer 1 formed coming into contact with the P-type base layer 2, a power supply 6 which applies a forward bias voltage between the N-type emitter layer 3 and the P-type base layer 2 through the intermediary of the emitter ferromagnetic layer 5, a power supply 7 which applies a reverse bias voltage between the N-type collector 4 and the P-type base layer 2, and a power supply 8 which supplies a bias voltage so as to inject minority carriers into the P-type base layer 2 through the base ferromagnetic layer 1.