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51. 发明授权

US08304810B2 Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium 失效
标题翻译：具有填充有硅锗的选择性蚀刻部分的半导体器件和半导体衬底
公开(公告)号：US08304810B2
公开(公告)日：2012-11-06
申请号：US12505942
申请日：2009-07-20
申请人： Nobuyuki Sugii , Kiyokazu Nakagawa , Shinya Yamaguchi , Masanobu Miyao
发明人： Nobuyuki Sugii , Kiyokazu Nakagawa , Shinya Yamaguchi , Masanobu Miyao
IPC分类号： H01L29/66
CPC分类号： H01L21/823807 , H01L29/1054 , H01L29/7782 , H01L29/7848
摘要： In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.
摘要翻译：为了提供一种具有低功耗和高速的场效晶体管的半导体器件，其通过使用Si和诸如与Si相同的组的诸如Ge，C等元素的组合，施加应变通过将半导体层2施加到其中形成有场效应晶体管的沟道的沟道形成层I的应变，使得沟道中的载流子的迁移率大于沟道形成层的材料中的载流子的迁移率，无限制

52. 发明授权

US08154699B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08154699B2
公开(公告)日：2012-04-10
申请号：US12474312
申请日：2009-05-29
申请人： Shinya Yamaguchi , Kyoko Kojima , Yoshiaki Toyota , Takeshi Ishida
发明人： Shinya Yamaguchi , Kyoko Kojima , Yoshiaki Toyota , Takeshi Ishida
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/133555
摘要： One of the pixel electrode and the counter electrode includes, on a protective film formed so as to cover the thin film transistor, a planar metal electrode formed so as to cover a rough surface formed in the reflective pixel part; and a planar transparent electrode formed in the reflective pixel part and the transparent pixel part so as to cover the metal electrode. Another one of the pixel electrode and the counter electrode includes, on an insulating film formed so as to cover the one of the pixel electrode and the counter electrode, a plurality of linear electrodes provided in parallel with one another so as to overlap the one of the pixel electrode and the counter electrode. The transparent electrode included in the one of the pixel electrode and the counter electrode is formed of a transparent conductive film which is formed through application.
摘要翻译：像素电极和对电极之一包括形成为覆盖薄膜晶体管的保护膜，形成为覆盖形成在反射像素部分中的粗糙表面的平面金属电极; 以及形成在反射像素部分和透明像素部分中以覆盖金属电极的平面透明电极。像素电极和对置电极中的另一个在形成为覆盖像素电极和对置电极之一的绝缘膜上包括彼此平行设置的多个线性电极，以与像素电极和对电极。像素电极和对置电极中的一个透明电极由通过应用形成的透明导电膜形成。

53. 发明授权

US07834353B2 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07834353B2
公开(公告)日：2010-11-16
申请号：US12021714
申请日：2008-01-29
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L31/0376 , H01L21/00
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
摘要翻译：一种具有形成在玻璃基板上的像素部分和驱动电路部分的TFT器件; 其中构成所述驱动电路的晶体管的至少有源层（有源区）包括多晶硅，其包括不具有与电流流动方向交叉的晶界的晶体。

54. 发明申请

US20100214525A1 IMAGE DISPLAY DEVICE 审中-公开
标题翻译：图像显示设备
公开(公告)号：US20100214525A1
公开(公告)日：2010-08-26
申请号：US12702881
申请日：2010-02-09
申请人： Shinya Yamaguchi , Mutsuko Hatano , Takashi Hattori , Naoya Okada
发明人： Shinya Yamaguchi , Mutsuko Hatano , Takashi Hattori , Naoya Okada
IPC分类号： G02F1/1333 , H01J1/62 , H05K1/00
CPC分类号： G02F1/133305 , G02F2201/54
摘要： Provided is an image display device, including: a first flexible substrate; and a circuit-forming layer constituting an image display area, the circuit-forming layer being made to adhere to one of surfaces of the first flexible substrate, in which, when the first flexible substrate has a thickness of t2, the circuit-forming layer has a thickness of t1 satisfying the following Equation (1): t1≧3/40×(t2-23) (1).
摘要翻译：提供一种图像显示装置，包括：第一柔性基板; 以及构成图像显示区域的电路形成层，所述电路形成层粘附到所述第一柔性基板的一个表面上，其中当所述第一柔性基板具有厚度为t2时，所述电路形成层具有满足下述式（1）的t1的厚度：t1≥3/ 40×（t2-23）（1）。

55. 发明授权

US07666769B2 Method for fabricating image display device 有权
标题翻译：图像显示装置的制造方法
公开(公告)号：US07666769B2
公开(公告)日：2010-02-23
申请号：US11702576
申请日：2007-02-06
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
摘要翻译：提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。形成在设置在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光束扫描重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的离散重整区域。在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致电影。

56. 发明授权

US07456913B2 LCD with first and second circuit regions each with separately optimized transistor properties 有权
标题翻译： LCD具有第一和第二电路区域，每个具有单独优化的晶体管特性
公开(公告)号：US07456913B2
公开(公告)日：2008-11-25
申请号：US11878285
申请日：2007-07-23
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： G02F1/136
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.
摘要翻译：大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

57. 发明授权

US07317207B2 Semiconductor device, method of making the same and liquid crystal display device 有权
标题翻译：半导体装置及其制造方法以及液晶显示装置
公开(公告)号：US07317207B2
公开(公告)日：2008-01-08
申请号：US11146016
申请日：2005-06-07
申请人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
发明人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译：为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。

58. 发明申请

US20050230683A1 Semiconductor device, method of making the same and liquid crystal display device 有权
公开(公告)号：US20050230683A1
公开(公告)日：2005-10-20
申请号：US11146016
申请日：2005-06-07
申请人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
发明人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/417 , H01L29/786
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.

59. 发明授权

US06949452B2 Method for fabricating image display device 有权
公开(公告)号：US06949452B2
公开(公告)日：2005-09-27
申请号：US10602738
申请日：2003-06-25
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , H01L21/82 , H01L21/26
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

60. 发明授权

US06903368B2 Thin-film transistor device, its manufacturing process, and image display using the device 失效
标题翻译：薄膜晶体管器件，其制造工艺和使用该器件的图像显示
公开(公告)号：US06903368B2
公开(公告)日：2005-06-07
申请号：US10190670
申请日：2002-07-09
申请人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： G02F1/1345 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L27/02 , H01L27/12 , H01L29/04 , H01L29/786 , H01L31/20
CPC分类号： H01L21/02691 , H01L21/02527 , H01L21/02532 , H01L21/02535 , H01L21/02595 , H01L21/02609 , H01L21/2026 , H01L21/268 , H01L27/0207 , H01L27/1214 , H01L27/1285 , H01L27/1296 , H01L29/045 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： A thin film made of silicon or another IV-group crystals (crystals and mixed crystals of C, Ge, Sn, and Pb) is twice scanned with a laser beam moving in two lateral directions in which crystal grains grow larger in order to form high-quality polycrystals in exact positions in the thin film, while defects uncontrollable by the prior arts are being reduced significantly, to realize a high-quality TFT device. The laser-scanning directions are defined by the crystallization face orientations.
摘要翻译：由硅或其他IV族晶体（C，Ge，Sn和Pb的晶体和混晶）制成的薄膜在两个横向移动的激光束被扫描两次，其中晶粒长大以形成高优质的多晶体在薄膜中的确切位置，而现有技术不可控制的缺陷被显着地减少，以实现高质量的TFT器件。激光扫描方向由结晶面取向定义。

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