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    • 53. 发明授权
    • Gas injection slit nozzle for a plasma process reactor
    • 用于等离子体处理反应器的气体注入狭缝喷嘴
    • US5746875A
    • 1998-05-05
    • US551881
    • 1995-10-16
    • Dan MaydanSteve S. Y. MakDonald OlgadoGerald Zheyao YinTimothy D. DriscollJames S. PapanuAvi Tepman
    • Dan MaydanSteve S. Y. MakDonald OlgadoGerald Zheyao YinTimothy D. DriscollJames S. PapanuAvi Tepman
    • H05H1/46C23C16/44C23C16/455C23F4/00H01J37/32H01L21/302H01L21/3065H05H1/42H05H1/00
    • C23C16/45574C23C16/45576C23C16/45587H01J37/3244H01J37/32449
    • The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
    • 本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置,其具有腔室壳体,保持要加工的工件的基座,用于将RF能量施加到腔室中的装置,该气体注入装置具有气体供应 在气体中含有蚀刻剂物质,在腔室中的开口,设置在腔室中的开口内的气体分配装置,其具有面向腔室内部的至少一个开口孔,以及用于控制气体流速的装置 从一个或多个开槽孔,以及从供给到气体分配装置的气体供给管线。 在优选实施例中,气体分配装置包括由至少一个环形构件包围的中心构件,其间具有间隙,包括开槽孔。 优选地,气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。 在一个示例中,气体分配装置的每个构件包括陶瓷,熔融石英,聚合物或阳极氧化铝材料中的一种,气体供给管线包括不锈钢。 优选地,每个构件在气体分配装置的组装之前具有其表面抛光。
    • 57. 发明授权
    • Shield and collimator pasting deposition chamber with a wafer support
periodically used as an acceptor
    • 屏蔽和准直器粘贴沉积室与周期性地用作受体的晶片支架
    • US5380414A
    • 1995-01-10
    • US75259
    • 1993-06-11
    • Avi Tepman
    • Avi Tepman
    • C23C14/34C23C14/56H01J37/32
    • H01J37/32862C23C14/34C23C14/564
    • A deposition chamber includes a target and an acceptor for supporting a wafer during a deposition cycle. The acceptor is made out of a pasting material in order that a pasting cycle can be run periodically in the deposition chamber to form a barrier between the layers of the target material to prevent the layer of target material from becoming too thick and thereby cracking and flaking. A shield protects the interior of the chamber during a deposition cycle. A collimator may be present between the target and the acceptor. A plasma is formed in the chamber and selectively attracted toward the target for deposition of target material onto a wafer or toward the acceptor for pasting acceptor material onto the shield and the bottom of the collimator, if present. A plurality of wafers are cycled through the deposition chamber for depositing the deposition material on their surface. After the plurality of wafers, a pasting cycle is run, depositing the pasting material around the interior of the shield, on the collimator and on the target. The target is then cleaned of pasting material while using a dummy wafer in the deposition chamber.
    • 沉积室包括靶和用于在沉积循环期间支撑晶片的受体。 受体由粘贴材料制成,以便可以在沉积室中周期性地运行粘贴循环,以在目标材料层之间形成阻挡层,以防止目标材料层变得太厚,从而破裂和剥落 。 屏蔽在沉积循环期间保护室的内部。 目标和受体之间可能存在准直仪。 在室中形成等离子体并选择性地朝向靶吸附,以将目标材料沉积到晶片上或朝向受体,以将受体材料粘贴到屏蔽件和准直仪的底部(如果存在)上。 多个晶片循环通过沉积室,用于在其表面上沉积沉积材料。 在多个晶片之后,运行粘贴循环,将粘贴材料围绕屏蔽件的内部,准直器和目标物体沉积。 然后在沉积室中使用伪晶片的同时清除目标物的粘贴材料。
    • 59. 发明授权
    • Pad conditioning head for CMP process
    • 用于CMP工艺的垫片调节头
    • US07459056B2
    • 2008-12-02
    • US11927048
    • 2007-10-29
    • Alexander S PolyakAvi Tepman
    • Alexander S PolyakAvi Tepman
    • C23F1/00B24B1/00B24B49/00B24B7/00
    • B24B53/017H01L21/31053
    • In a first aspect, a first apparatus is provided for a chemical mechanical polishing (CMP) process. The first apparatus includes (1) a rotatable member; (2) an end effector adapted to receive and retain a conditioning disk; and (3) an elastic device disposed between the rotatable member and the end effector. The elastic device is (a) adapted to rotate the end effector via a torque from the rotatable member, and (b) flexibly extensible so as to impart a force to the end effector while permitting the end effector to deviate from a perpendicular alignment with the rotatable member in order for a conditioning surface of the conditioning disk to conform to an irregular polishing surface of a pad being conditioned. Numerous other aspects are provided, including methods and apparatus for using liquid or gas to deter polishing slurry or debris from entering the conditioning head.
    • 在第一方面,提供了用于化学机械抛光(CMP)工艺的第一设备。 第一装置包括(1)可旋转构件; (2)适于接收和保持调节盘的端部执行器; 和(3)设置在可旋转构件和末端执行器之间的弹性装置。 弹性装置是(a)适于通过来自可旋转构件的扭矩旋转末端执行器,以及(b)柔性可伸展的,以便向末端执行器施加力,同时允许末端执行器偏离与 可旋转构件,以便调节盘的调节表面与被调节的垫的不规则抛光表面相一致。 提供了许多其它方面,包括使用液体或气体来阻止抛光浆料或碎屑进入调节头的方法和装置。