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51. 发明授权

US09685275B2 Power storage device and method for manufacturing the same 有权
公开(公告)号：US09685275B2
公开(公告)日：2017-06-20
申请号：US13088592
申请日：2011-04-18
申请人： Kazutaka Kuriki , Mikio Yukawa , Yuji Asano
发明人： Kazutaka Kuriki , Mikio Yukawa , Yuji Asano
IPC分类号： H01L29/02 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/50 , H01L49/02 , H01G11/26 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/38 , H01M4/66 , C30B25/00 , C30B29/06 , C30B29/62 , C30B33/02 , H01L21/02 , H01M10/0525 , H01M10/0583
CPC分类号： H01M4/386 , C30B25/005 , C30B29/06 , C30B29/62 , C30B33/02 , H01G11/06 , H01G11/22 , H01G11/26 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/50 , H01G11/68 , H01G11/70 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L28/82 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/382 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M10/0569 , H01M10/0583 , H01M12/08 , H01M2300/0037 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
摘要： Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.

52. 发明授权

US09281134B2 Power storage device and method for manufacturing the same 有权
标题翻译：蓄电装置及其制造方法
公开(公告)号：US09281134B2
公开(公告)日：2016-03-08
申请号：US13111079
申请日：2011-05-19
申请人： Satoshi Murakami , Kazutaka Kuriki , Mikio Yukawa
发明人： Satoshi Murakami , Kazutaka Kuriki , Mikio Yukawa
IPC分类号： H01G11/30 , C23C16/24 , H01G11/24 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/66
CPC分类号： H01G11/24 , C23C16/24 , H01G11/30 , H01G11/46 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/48 , H01M4/52 , H01M4/661 , H01M10/0525 , H01M2220/20 , H01M2220/30 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7022 , Y10T29/417 , Y10T29/49115
摘要： A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.
摘要翻译：能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。晶须状结晶硅区域包括具有弯曲或分支部分的突起。

53. 发明申请

US20130045156A1 METHOD FOR FORMING GRAPHENE AND CRAPHENE OXIDE SALT, AND GRAPHENE OXIDE SALT 审中-公开
标题翻译：形成石墨和氧化镍盐的方法和氧化亚烷基盐
公开(公告)号：US20130045156A1
公开(公告)日：2013-02-21
申请号：US13570405
申请日：2012-08-09
申请人： Kuniharu Nomoto , Nobuhiro Inoue , Mikio Yukawa , Tatsuya Ikenuma
发明人： Kuniharu Nomoto , Nobuhiro Inoue , Mikio Yukawa , Tatsuya Ikenuma
IPC分类号： C01B31/02 , C07C51/16 , C07C51/29 , C07C51/305 , C07C233/64 , C07C63/42 , C07C39/235 , C07C231/10 , C07C37/64 , B82Y30/00 , B82Y40/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/192 , C01B32/23 , H01M4/366 , H01M4/625 , H01M10/0525
摘要： A first precipitate is formed by mixing graphite and an oxidizer containing an alkali metal salt in a solution. Next, a second precipitate is formed by ionizing the oxidizer which is included in the first precipitate, with an acid solution, and removing the oxidizer from the first precipitate. Then, a dispersion liquid in which graphene oxide is dispersed is prepared by mixing the second precipitate and water to form a mixed solution and then applying ultrasonic waves to the mixed solution or mechanically stirring the mixed solution, so that the graphene oxide is separated from graphite oxide that is the graphite which is included in the second precipitate and oxidized. Next, graphene oxide salt is formed by mixing the dispersion liquid, a basic solution, and an organic solvent and reacting the graphene oxide included in the dispersion liquid and a base included in the basic solution to each other.
摘要翻译：通过在溶液中混合石墨和含有碱金属盐的氧化剂来形成第一沉淀物。接下来，通过用酸溶液离子化包含在第一沉淀物中的氧化剂，并从第一沉淀物中除去氧化剂，形成第二沉淀物。然后，通过将第二沉淀物和水混合以形成混合溶液，然后向混合溶液中施加超声波或机械搅拌混合溶液，制备分散有石墨烯氧化物的分散液，使得氧化石墨烯与石墨烯分离氧化物，其是包含在第二沉淀中并被氧化的石墨。接着，通过将分散液，碱性溶液和有机溶剂混合并使包含在分散液中的石墨烯和基础溶液中所含的碱彼此反应形成氧化石墨烯盐。

54. 发明申请

US20070105285A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070105285A1
公开(公告)日：2007-05-10
申请号：US11593651
申请日：2006-11-07
申请人： Naoto Kusumoto , Nobuharu Ohsawa , Mikio Yukawa , Yoshitaka Dozen
发明人： Naoto Kusumoto , Nobuharu Ohsawa , Mikio Yukawa , Yoshitaka Dozen
IPC分类号： H01L21/84
CPC分类号： H01L27/1266 , B82Y10/00 , G02F2001/13613 , G11C13/00 , G11C13/0014 , G11C2213/77 , G11C2213/79 , H01L27/1214 , H01L27/281 , H01L29/458 , H01L51/003 , H01L2251/558
摘要： To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.
摘要翻译：提供功能可靠性更高的半导体器件和能够以低成本高成品率地制造半导体器件而不使器件或工艺复杂化的技术。形成含有一种或多种铟，锡，铅，铋，钙，锰或锌的至少一种第一导电层和第二导电层; 或氧化处理进行有机化合物层和第一导电层之间以及有机化合物层和第二导电层之间的界面中的至少一个。在第一衬底上形成有剥离层的第一导电层，有机化合物层和第二导电层可以用剥离层从第一衬底剥离，并且转置到第二衬底。

55. 发明申请

US20060214151A1 Light-emitting element and laser apparatus using the light-emitting element 审中-公开
标题翻译：使用发光元件的发光元件和激光装置
公开(公告)号：US20060214151A1
公开(公告)日：2006-09-28
申请号：US11376321
申请日：2006-03-16
申请人： Hiroko Abe , Mikio Yukawa , Ryoji Nomura
发明人： Hiroko Abe , Mikio Yukawa , Ryoji Nomura
IPC分类号： H01L29/06
CPC分类号： H01S5/36 , H01L51/52 , H01L51/5265
摘要： It is an object of the present invention to provide a light-emitting element in which an inverted distribution state can be formed by exciting an organic compound with current at low current density, and moreover to provide a laser oscillator of a current excitation type using an organic compound as a laser medium. In a light-emitting element of the present invention, a molecule existing in a ground state is not directly excited by external energy but is excited by current fed to a first layer and a second layer which are provided adjacently so that ion species are accumulated in a region of the first layer that is in contact with the second layer.
摘要翻译：本发明的目的是提供一种发光元件，其中可以通过以低电流密度的电流激发有机化合物来形成反向分布状态，此外，提供使用电流激发型的激光振荡器有机化合物作为激光介质。在本发明的发光元件中，存在于基态的分子不是被外部能量直接激发，而是被馈送到相邻设置的第一层和第二层的电流而被激发，使得离子种类被积聚在与第二层接触的第一层的区域。

56. 发明授权

US09129754B2 Electrode for power storage device and power storage device 有权
标题翻译：蓄电装置及蓄电装置用电极
公开(公告)号：US09129754B2
公开(公告)日：2015-09-08
申请号：US13597652
申请日：2012-08-29
申请人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
发明人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
IPC分类号： H01M4/64 , H01M2/02 , H01G9/04 , H01G11/28 , H01M4/134 , H01M4/36 , H01M4/66 , H01G11/26 , H01G11/50 , H01M4/62 , H01M10/052 , H01M4/02
CPC分类号： H01G11/28 , H01G11/26 , H01G11/50 , H01M4/134 , H01M4/366 , H01M4/621 , H01M4/625 , H01M4/667 , H01M10/052 , H01M2004/021 , Y02E60/122 , Y02E60/13 , Y02P70/54
摘要： To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker.
摘要翻译：提供具有高可靠性并且可以小型化的蓄电装置用电极。提供包括电极的蓄电装置。在电极中，在集电体上设置减轻包含晶须的活性物质层的内部应力的应力消除层。通过应力消除层，能够抑制集电体的变形，能够提高蓄电装置的生产率。另外，能够减小蓄电装置的尺寸，提高其可靠性。可以形成石墨烯以覆盖包括晶须的活性物质层。

57. 发明授权

US08421061B2 Memory element and semiconductor device including the memory element 有权
标题翻译：存储元件和包括存储元件的半导体器件
公开(公告)号：US08421061B2
公开(公告)日：2013-04-16
申请号：US11713751
申请日：2007-03-05
申请人： Mikio Yukawa , Nozomu Sugisawa
发明人： Mikio Yukawa , Nozomu Sugisawa
IPC分类号： H01L29/08 , H01L51/00
CPC分类号： H01L27/13 , H01L27/101
摘要： It is an object of the present invention to reduce variations in behavior of each memory element. In addition, it is another object of the present invention to obtain a semiconductor device, on which the memory element is mounted, which is superior in terms of performance and reliability. A memory element of the present invention includes in its structure a first conductive layer; a semiconductor layer; an organic compound layer; and a second conductive layer, where the semiconductor layer and the organic compound layer are interposed between the first conductive layer and the second conductive layer, and the semiconductor layer is formed to be in contact with the first conductive layer and/or the second conductive layer. With such a structure, variations in behavior of each memory element are reduced.
摘要翻译：本发明的目的是减少每个存储元件的行为变化。此外，本发明的另一个目的是获得其性能和可靠性方面优于其上安装有存储元件的半导体器件。本发明的记忆元件在其结构中包括第一导电层; 半导体层; 有机化合物层; 以及第二导电层，其中半导体层和有机化合物层介于第一导电层和第二导电层之间，并且半导体层形成为与第一导电层和/或第二导电层接触。利用这种结构，减少了每个存储元件的行为变化。

58. 发明授权

US07977669B2 Semiconductor memory device having a liquid-repellent layer 有权
标题翻译：具有防液层的半导体存储器件
公开(公告)号：US07977669B2
公开(公告)日：2011-07-12
申请号：US11884016
申请日：2006-02-07
申请人： Mikio Yukawa , Gen Fujii , Hironobu Shoji
发明人： Mikio Yukawa , Gen Fujii , Hironobu Shoji
IPC分类号： H01L35/24 , H01L51/00 , H01L47/00
CPC分类号： G11C13/0014 , G11C13/004 , G11C2013/0042 , G11C2213/77 , G11C2213/79 , H01L27/283
摘要： It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.
摘要翻译：本发明的目的是提供一种高性能和高可靠性的半导体器件，并且以高成本提供低成本制造半导体器件的技术。半导体器件通过以下步骤制造：形成第一导电层，在第一导电层上形成第一液体排斥层，在第一拒液层上排出含有掩模层的材料的组合物以形成掩模层，使用掩模层处理第一液体排斥层，形成第二疏液层，在第一导电层和第二导电层上形成绝缘层，并在绝缘层上形成第二导电层。

59. 发明授权

US07926726B2 Survey method and survey system 有权
标题翻译：调查方法和调查制度
公开(公告)号：US07926726B2
公开(公告)日：2011-04-19
申请号：US11277595
申请日：2006-03-27
申请人： Mikio Yukawa , Kazue Hosoya
发明人： Mikio Yukawa , Kazue Hosoya
IPC分类号： G06K19/06
CPC分类号： G06Q30/02
摘要： A customer is made to have an object equipped with a chip (wireless chip) capable of wireless communication. Further, an antenna is arranged in each of an entrance and an exit of a saleroom in a store and a plurality of points, respectively, inside the saleroom of the store. When the customer approaches the entrance, exit, and plurality of points, positional information and time information are written from an antenna arranged in the approached point to the wireless chip. By reading information written in the wireless chip, a movement path or the like of the customer in the saleroom is judged. The needs of the customer are judged based on the result.
摘要翻译：使客户能够配备能够进行无线通信的芯片（无线芯片）的物体。此外，天线分别布置在商店中的门廊的入口和出口的每一个中以及分别在商店的门廊内的多个点。当客户接近入口，出口和多个点时，位置信息和时间信息从布置在接近点的天线写入无线芯片。通过读取在无线芯片中写入的信息，判断客户的操作路径等。根据结果判断顾客的需求。

60. 发明申请

US20100190312A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100190312A1
公开(公告)日：2010-07-29
申请号：US12753194
申请日：2010-04-02
申请人： Naoto Kusumoto , Nobuharu Ohsawa , Mikio Yukawa , Yoshitaka Dozen
发明人： Naoto Kusumoto , Nobuharu Ohsawa , Mikio Yukawa , Yoshitaka Dozen
IPC分类号： H01L21/02
CPC分类号： H01L27/1266 , B82Y10/00 , G02F2001/13613 , G11C13/00 , G11C13/0014 , G11C2213/77 , G11C2213/79 , H01L27/1214 , H01L27/281 , H01L29/458 , H01L51/003 , H01L2251/558
摘要： To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.
摘要翻译：提供功能可靠性更高的半导体器件和能够以低成本高成品率地制造半导体器件而不使器件或工艺复杂化的技术。形成含有一种或多种铟，锡，铅，铋，钙，锰或锌的至少一种第一导电层和第二导电层; 或氧化处理进行有机化合物层和第一导电层之间以及有机化合物层和第二导电层之间的界面中的至少一个。在第一衬底上形成有剥离层的第一导电层，有机化合物层和第二导电层可以用剥离层从第一衬底剥离，并且转置到第二衬底。

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