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51. 发明授权

US06616863B1 Plasticized, antiplasticized and crystalline conducting polymers and precursors thereof 有权
标题翻译：增塑的，抗塑化的和结晶的导电聚合物及其前体
公开(公告)号：US06616863B1
公开(公告)日：2003-09-09
申请号：US09208528
申请日：1998-12-09
申请人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
发明人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
IPC分类号： H01B112
CPC分类号： C08G61/12 , H01B1/128
摘要： Materials containing precursors to electrically conductive polymers and electrically conductive polymers are described which have a high degree of crystallinity. The high degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. High levels of electrical conductivity are achieved in the electrically conductive materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriental film which has isotropic electrical conductivity.
摘要翻译：描述了具有高结晶度的导电聚合物和导电聚合物的前体的材料。通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现高结晶度。在导电材料中实现高水平的导电性而不使材料拉伸取向。与具有各向同性电导率的拉伸东方薄膜相比，增强的导电性是各向同性的。

52. 发明授权

US06340734B1 Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method 有权
标题翻译：倍半硅氧烷聚合物，合成方法，光致抗蚀剂组合物和多层平版印刷方法
公开(公告)号：US06340734B1
公开(公告)日：2002-01-22
申请号：US09454563
申请日：1999-12-07
申请人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
发明人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
IPC分类号： C08G7706
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/128
摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.
摘要翻译：通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

53. 发明授权

US06312620B1 Deaggregated electrically conductive polymers and precursors thereof 有权
标题翻译：解聚集的导电聚合物及其前体
公开(公告)号：US06312620B1
公开(公告)日：2001-11-06
申请号：US09288930
申请日：1999-04-09
申请人： Marie Angelopoulos , Bruce K. Furman
发明人： Marie Angelopoulos , Bruce K. Furman
IPC分类号： H01B112
CPC分类号： H01B1/124 , C08G2261/312 , H01B1/125 , H01B1/127 , H01B1/128 , Y10S524/91 , Y10T428/26
摘要： Deaggregated substituted and unsubstitued polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polyselenophene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.
摘要翻译：描述了聚集的取代和未取代的聚对苯二酚，聚对苯乙烯基乙烯基，聚苯胺，聚嗪，聚噻吩，聚对苯硫醚，聚呋喃，聚吡咯，聚硒吩，由可溶性前体及其组合形成的聚乙炔及其共聚物及其制备方法。随后掺杂时的解聚聚合物分子显示更高的导电性。诸如氯化锂，间甲酚和壬基苯酚的试剂用于解聚聚合物分子。解聚剂可以在掺杂分子之前或期间加入。

54. 发明授权

US06251569B1 Forming a pattern of a negative photoresist 有权
标题翻译：形成负光致抗蚀剂的图案
公开(公告)号：US06251569B1
公开(公告)日：2001-06-26
申请号：US09373555
申请日：1999-08-13
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
IPC分类号： G03F730
CPC分类号： G03F7/0758 , G03F7/038 , Y10S430/111
摘要： A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.
摘要翻译：已经发现了一组新的基于聚合物侧基碳基 - 氧键重新分配的非化学扩增负色调水/水基（可显影（photo））抗蚀剂。

55. 发明授权

US6140462A Oxidative/reductive methods of deaggregation of electrically conductive polymers and precursors thereof and methods of fabricating articles therewith 失效
标题翻译：导电聚合物及其前体解聚的氧化/还原方法及其制造方法
公开(公告)号：US6140462A
公开(公告)日：2000-10-31
申请号：US43622
申请日：1998-07-27
申请人： Marie Angelopoulos , Alan Graham MacDiarmid , Weigong Zheng
发明人： Marie Angelopoulos , Alan Graham MacDiarmid , Weigong Zheng
IPC分类号： C08J3/00 , C08G61/02 , C08G61/10 , C08G61/12 , C08G73/00 , C08G73/02 , C08G75/02 , C08G85/00 , C08J3/02 , C08J5/18 , C08J7/00 , D06M11/63 , D06M13/00 , H01B1/12
CPC分类号： H01B1/128 , C08G61/12 , C08G61/122 , C08G73/0266
摘要： The present invention is directed to oxidative and reductive methods of fabricating electrically conducting polymers and precursors thereof in particular polyanilines in which the polymer chains are deaggregated. Such deaggregated conducting polymers and precusors thereof exhibit better processability and higher electrical conductivity than do the corresponding aggregated polymers. Substituted and unsubstituted polyanilines in the substantially non oxidized or non reduced form (emeraldine form) are converted to an intermediate deaggregated reduced or oxidized form. The intermediate reduced or oxidized deaggregated form is processed into an article. The articles is subsequently treated with a dopant and an oxidizing or reducing agent to reform the original substantially non oxidized or non reduced form. The methods described herein permit the formation of articles such as shaped articles and films having deaggregated structure and higher electrical conductivity.
摘要翻译： PCT No.PCT / US97 / 13378 Sec。 371日期：1998年7月27日 102（e）日期1998年7月27日PCT提交1997年7月24日PCT公布。第WO98 / 05044号公报日期1998年2月5日本发明涉及制备导电聚合物及其前体，特别是其中聚合物链解聚的聚苯胺的氧化还原方法。这样的解聚集导电聚合物及其前体与相应的聚集聚合物相比表现出更好的加工性和更高的电导率。基本上非氧化或非还原形式（翠绿亚胺形式）的取代和未取代的聚苯胺被转化为中间解聚集还原或氧化形式。将中间还原或氧化的解聚形式加工成制品。随后用掺杂剂和氧化还原剂处理制品以改造原始的基本上非氧化或非还原形式。本文描述的方法允许形成诸如成形制品和具有解聚结构和更高导电性的薄膜的制品。

56. 发明授权

US5997773A Method for providing discharge protection or shielding 有权
标题翻译：提供放电保护或屏蔽的方法
公开(公告)号：US5997773A
公开(公告)日：1999-12-07
申请号：US249302
申请日：1999-02-12
申请人： Marie Angelopoulos , Vlasta A. Brusic , Teresita Ordonez Graham , Sampath Purushothaman , Ravi F. Saraf , Jane Margaret Shaw , Judith Marie Roldan , Alfred Viehbeck
发明人： Marie Angelopoulos , Vlasta A. Brusic , Teresita Ordonez Graham , Sampath Purushothaman , Ravi F. Saraf , Jane Margaret Shaw , Judith Marie Roldan , Alfred Viehbeck
IPC分类号： C08G61/12 , C08L33/00 , C08L65/00 , C09D5/08 , C09D5/24 , C09J9/02 , H01B1/12 , H01B1/22 , H01B1/24 , H05K3/32 , H05K9/00 , H01B1/20 , B05D5/12
CPC分类号： H05K9/0083 , C08G61/12 , C08L65/00 , C09D5/08 , C09D5/24 , C09J9/02 , H01B1/125 , H01B1/127 , H01B1/128 , H01B1/22 , H01B1/24 , H05K3/321 , H05K9/0079 , H05K9/0088 , C08L33/00 , H05K2201/0329 , Y10S428/901 , Y10T428/24917 , Y10T428/25 , Y10T428/31529 , Y10T428/31533 , Y10T428/31605 , Y10T428/31663 , Y10T428/31678 , Y10T428/31681 , Y10T428/31692 , Y10T428/31721 , Y10T428/31725 , Y10T428/31855
摘要： Electrostatic discharge protection or electromagnetic interference shielding is provided by applying a composition comprising a thermoset or thermoplastic polymeric matrix, and a conductive filler component, where said filler component comprises electrically conductive particles and at least one conducting polymer to a dielectric substrate.
摘要翻译：通过施加包含热固性或热塑性聚合物基质和导电填料组分的组合物提供静电放电保护或电磁干扰屏蔽，其中所述填料组分包含导电颗粒和至少一种导电聚合物至电介质基底。

57. 发明授权

US5932143A Polycrystalline conducting polymers and precursors thereof having adjustable morphology and physical properties 失效
标题翻译：具有可调节形态和物理性质的多晶导电聚合物及其前体
公开(公告)号：US5932143A
公开(公告)日：1999-08-03
申请号：US620618
申请日：1996-03-22
申请人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
发明人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
IPC分类号： C08G61/12 , H01B1/12 , C08K5/54
CPC分类号： C08G61/12 , H01B1/128 , Y10T428/249958
摘要： Polycrystalline materials containing crystallies of precursors to electrically conductive polymers and electrically conductive polymers are described which have an adjustable high degree of crystallinity. The intersticial regions between the crystallites contains amorphous material containing precursors to electrically conductive polymers and/or electrically conductive polymers. The degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. This is preferable achieved by including additives, such as plasticizers and diluents, to the solution from which the polycrystalline material is formed. The morphology of the polycrystalline material is adjustable to modify the properties of the material such as the degree of crystallinity, crystal grain size, glass transition temperature, thermal coefficient of expansion and degree of electrical conductivity. High levels of electrical conductivity are achieved in in the electrically conductive polycrystalline materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity.
摘要翻译：描述了具有可调节高结晶度的导电聚合物和导电聚合物的前体结晶的多晶材料。微晶之间的区域包含含有导电聚合物和/或导电聚合物的前体的无定形材料。通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现结晶度。优选通过将诸如增塑剂和稀释剂的添加剂添加到形成多晶材料的溶液中来实现。可以调节多晶材料的形态，以改变材料的性质，例如结晶度，晶粒尺寸，玻璃化转变温度，热膨胀系数和电导率。在导电多晶材料中实现高水平的导电性，而不拉伸定向该材料。与具有各向同性电导率的拉伸取向膜相比，增强的导电性是各向同性的。

58. 发明授权

US08198396B2 Methods of fabricating plasticized, antiplasticized and crystalline conducting polymers and precursors thereof 有权
标题翻译：制造增塑的，抗增塑的和结晶的导电聚合物及其前体的方法
公开(公告)号：US08198396B2
公开(公告)日：2012-06-12
申请号：US12583030
申请日：2009-08-12
申请人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
发明人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
IPC分类号： C08G73/00 , C08G73/20 , H01B1/12 , C08F6/10
CPC分类号： H01B1/128
摘要： Methods of forming materials containing precursors to electrically conductive polymers and electrically conductive polymers are described which have a high degree of crystallinity. The high degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. High levels of electrical conductivity are achieved in in the electrically conductive materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity. In the preferred embodiment, additives are added to a solution containing a solvent and the precursor or electrically conductive polymer. The additives are preferably plasticizer of diluents. As the solvent is removed the material dries and contains a higher degree of crystallinity than in the absence of the additive.
摘要翻译：描述了形成具有高结晶度的导电聚合物和导电聚合物前体的材料的方法。通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现高结晶度。在导电材料中实现高水平的导电性而不使材料拉伸定向。与具有各向同性电导率的拉伸取向膜相比，增强的导电性是各向同性的。在优选的实施方案中，将添加剂加入到含有溶剂和前体或导电聚合物的溶液中。添加剂优选稀释剂的增塑剂。当除去溶剂时，与不存在添加剂相比，材料干燥并含有更高的结晶度。

59. 发明授权

US07960095B2 Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates 有权
标题翻译：使用混合的底物来增强镀铬或敏感衬底上的抗蚀剂图案
公开(公告)号：US07960095B2
公开(公告)日：2011-06-14
申请号：US10597904
申请日：2004-02-11
申请人： Wayne M. Moreau , Marie Angelopoulos , Wu-Song Huang , David R. Medeiros , Karen E. Petrillo
发明人： Wayne M. Moreau , Marie Angelopoulos , Wu-Song Huang , David R. Medeiros , Karen E. Petrillo
IPC分类号： G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38 , G03F7/039
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译：通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。

60. 发明授权

US07736833B2 Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 失效
标题翻译：使用调谐聚合物膜作为底层的多层抗蚀剂系统及其制造方法
公开(公告)号：US07736833B2
公开(公告)日：2010-06-15
申请号：US11906391
申请日：2007-10-02
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/091 , G03F7/0757 , G03F7/094 , G03F7/405 , Y10S430/145
摘要： Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.
摘要翻译：包括双层和顶面成像的多层抗蚀剂结构，其利用调节的作为ARC，平坦化层和耐蚀刻硬质掩模的底层，其特性如光学，化学和物理性质被定制以提供表现出高分辨率，无残留光刻的多层抗蚀剂结构以及制备这些材料的方法。

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