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51. 发明申请

US20130234021A1 METHOD AND APPARATUS TO MEASURE STEP HEIGHT OF DEVICE USING SCANNING ELECTRON MICROSCOPE 有权
标题翻译：使用扫描电子显微镜测量器件的高度的方法和装置
公开(公告)号：US20130234021A1
公开(公告)日：2013-09-12
申请号：US13680347
申请日：2012-11-19
申请人： Young-Hoon Sohn , Jin-Woo Lee , Yong-Deok Jeong , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
发明人： Young-Hoon Sohn , Jin-Woo Lee , Yong-Deok Jeong , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
IPC分类号： G01B15/00
CPC分类号： G01B15/00 , G01N23/225 , G06T7/60 , G06T2207/10061 , H01J37/222 , H01J37/26 , H01J37/28 , H01J2237/24578 , H01J2237/2815 , H01J2237/2817
摘要： A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.
摘要翻译：使用扫描电子显微镜（SEM）测量器件的台阶高度的方法可以包括提供包括第一区域和第二区域的器件，其中在第一区域和第二区域之间形成台阶，通过使用SEM拍摄该装置来获得该装置的SEM图像，其中，SEM图像包括用于第一区域的第一SEM图像区域和用于第二区域的第二SEM图像区域，将SEM图像转换为灰度级直方图以及计算与第一SEM图像区域相关的第一峰值和与第二SEM图像区域相关的第二峰值，其中通过改变SEM的焦距来重复计算第一峰值和第二峰值，并且确定通过根据焦距的变化分析第一峰值的变化趋势和根据焦距变化的第二峰值变化的趋势的步骤的高度 th。

52. 发明申请

US20090219520A1 APPARATUS AND METHOD FOR INSPECTING A SURFACE OF A WAFER 有权
标题翻译：用于检查波形表面的装置和方法
公开(公告)号：US20090219520A1
公开(公告)日：2009-09-03
申请号：US12368020
申请日：2009-02-09
申请人： Woo-Seok Ko , Yu-Sin Yang , Young-Jee Yoon , Chung-Sam Jun
发明人： Woo-Seok Ko , Yu-Sin Yang , Young-Jee Yoon , Chung-Sam Jun
IPC分类号： G01N21/88 , G06F19/00
CPC分类号： G01N21/9501 , G01N2021/8858 , G01N2021/8861
摘要： A surface inspection apparatus and method increase wafer productivity, wherein to increase an efficiency of the surface inspection apparatus to detect defects during a scanning of the wafer surface, a scanning speed for a subsequent defect detection is varied according to an increase/decrease of defect density represented on a plurality of images acquired successively. When the density of defects is reduced, the scanning speed increases and a level of a skip rule increases, and when the density of defects increases, the scanning speed decreases and a level of the skip rule decreases to precisely detect defects, thereby increasing reliability, throughput, and productivity.
摘要翻译：表面检查装置和方法提高晶片生产率，其中为了提高表面检查装置在晶片表面的扫描期间的缺陷的效率，随后的缺陷检测的扫描速度根据缺陷密度的增加/减小而变化表示在连续获取的多个图像上。当缺陷密度降低时，扫描速度增加，跳跃规则的水平增加，并且当缺陷密度增加时，扫描速度降低，并且跳过规则的水平降低以精确地检测缺陷，从而提高可靠性，吞吐量和生产力。

53. 发明授权

US07428328B2 Method of forming a three-dimensional image of a pattern to be inspected and apparatus for performing the same 有权
标题翻译：形成待检查图案的三维图像的方法及其执行方法
公开(公告)号：US07428328B2
公开(公告)日：2008-09-23
申请号：US11180504
申请日：2005-07-12
申请人： Yun-Jung Jee , Chung-Sam Jun , Yu-Sin Yang , Tae-Kyoung Kim
发明人： Yun-Jung Jee , Chung-Sam Jun , Yu-Sin Yang , Tae-Kyoung Kim
IPC分类号： G06K9/00
CPC分类号： G21K7/00
摘要： In a method and apparatus for forming a three-dimensional image for an inspection pattern, a reference intensity function of an inspection X-ray is formed in accordance with a continuous scanning depth, and is differentiated with respect to the scanning depth. The differential reference intensity function is decomposed into a start function and a characteristic function. The differential reference intensity function is then repeatedly integrated while a temporary vertical profile function is substituted for the start function until the temporary intensity of a reference X-ray is within an allowable error range. The temporary vertical profile function satisfying the error range is selected as an optimal vertical profile function. A surface shape is combined to the optimal vertical profile function along a depth of the inspection pattern to thereby form the three-dimensional image for the inspection pattern.
摘要翻译：在用于形成检查图案的三维图像的方法和装置中，根据连续的扫描深度形成检查X射线的参考强度函数，并且相对于扫描深度是不同的。差分参考强度函数被分解为起始函数和特征函数。差分参考强度函数然后被重复地积分，而临时垂直轮廓函数被替换为开始函数，直到参考X射线的临时强度在可允许的误差范围内。选择满足误差范围的临时垂直剖面函数作为最佳垂直剖面函数。沿着检查图案的深度将表面形状组合到最佳垂直轮廓函数，从而形成用于检查图案的三维图像。

54. 发明申请

US20070190904A1 Wafer holder and wafer conveyor equipped with the same 失效
标题翻译：晶圆架和晶圆输送机配备相同
公开(公告)号：US20070190904A1
公开(公告)日：2007-08-16
申请号：US11783534
申请日：2007-04-10
申请人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
发明人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
IPC分类号： B24B51/00
CPC分类号： H01L21/68785 , H01L21/6776
摘要： The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.
摘要翻译：本发明涉及晶片保持器和相关的晶片输送系统。晶片保持器保持晶片并且在腔室内水平移动。晶片和晶片保持架之间的接触面积减小，并且由晶片保持器的部件之间的耳朵产生的潜在的污染物被气密的盖子所困住。由于晶片保持架在固定到导轨的同时水平移动，所以晶片传送系统减小了导轨和晶片保持器之间的摩擦。

55. 发明授权

US07220173B2 Wafer holder and wafer conveyor system equipped with the same 失效
标题翻译：晶圆架和晶圆输送系统配备相同
公开(公告)号：US07220173B2
公开(公告)日：2007-05-22
申请号：US11016247
申请日：2004-12-20
申请人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
发明人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
IPC分类号： B24B47/02
CPC分类号： H01L21/68785 , H01L21/6776
摘要： The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.
摘要翻译：本发明涉及晶片保持器和相关的晶片输送系统。晶片保持器保持晶片并且在腔室内水平移动。晶片和晶片固定器之间的接触面积减小，并且由晶片保持器的部件之间的耳朵产生的潜在的污染物被气密的盖子所困住。由于晶片保持架在固定到导轨的同时水平移动，所以晶片传送系统减小了导轨和晶片保持器之间的摩擦。

56. 发明授权

US07197426B2 Method and apparatus for measuring thickness of metal layer 失效
标题翻译：用于测量金属层厚度的方法和装置
公开(公告)号：US07197426B2
公开(公告)日：2007-03-27
申请号：US11191069
申请日：2005-07-28
申请人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park
发明人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park
IPC分类号： G01B11/28
CPC分类号： G01B11/0666
摘要： In a method and apparatus for measuring a thickness of a metal layer formed on a semiconductor substrate first, second, and third light pulses are successively irradiated onto a top surface of the metal layer to generate respective first, second, and third second sonic waves in the metal layer. Interference between the first and second sonic waves alters a detected reflectivity of the third light pulse off the metal layer. Maximum interference of the sonic waves occurs where the first sonic wave travels to a bottom surface of the metal layer and back to the top surface in the same time that it takes for the second light pulse to arrive at the surface of the metal layer. Accordingly, the velocity of the first sonic wave and a time lag between the first and second light pulses are used to determine the thickness of the metal layer.
摘要翻译：在用于测量形成在半导体衬底上的金属层的厚度的方法和装置中，第一，第二和第三光脉冲被连续照射在金属层的顶表面上，以产生相应的第一，第二和第三声波金属层。第一和第二声波之间的干扰改变了第三光脉冲从金属层的检测反射率。发生声波的最大干扰，其中第一声波在第二光脉冲到达金属层的表面所需的同一时间内移动到金属层的底表面并返回到顶表面。因此，使用第一声波的速度和第一和第二光脉冲之间的时间滞后来确定金属层的厚度。

57. 发明授权

US07186280B2 Method of inspecting a leakage current characteristic of a dielectric layer and apparatus for performing the method 有权
标题翻译：检查电介质层的漏电流特性的方法及其执行方法
公开(公告)号：US07186280B2
公开(公告)日：2007-03-06
申请号：US11175363
申请日：2005-07-07
申请人： Tae-Min Eom , Chung-Sam Jun , Yu-Sin Yang , Yun-Jung Jee
发明人： Tae-Min Eom , Chung-Sam Jun , Yu-Sin Yang , Yun-Jung Jee
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： G01R31/1263 , Y10T29/41
摘要： A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.
摘要翻译：一种在包括具有包括图案化结构的多个单元块，形成在图案化结构上的电介质层和外围电路区域的单元阵列区域的基板上检查介质层的漏电流的方法，包括沉积电晕离子电荷在从所述多个单元块中选择的单元块上测量由所选择的单元块上的介电层的漏电流引起的表面电压的方差。将表面电压的方差与参考数据进行比较，以确定电介质层的漏电流特性。

58. 发明申请

US20070028771A1 Adsorption apparatus, semiconductor device manufacturing facility comprising the same, and method of recycling perfulorocompounds 审中-公开
标题翻译：吸附装置，包括该吸附装置的半导体装置制造设备以及循环使用方法
公开(公告)号：US20070028771A1
公开(公告)日：2007-02-08
申请号：US11498017
申请日：2006-08-03
申请人： Ji-Young Shin , Chung-Sam Jun , Kye-Weon Kim
发明人： Ji-Young Shin , Chung-Sam Jun , Kye-Weon Kim
IPC分类号： B01D53/02
CPC分类号： B01D53/70 , B01D53/04 , B01D53/0454 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2256/26 , B01D2257/2066 , B01D2258/0216 , B01D2259/40083 , B01D2259/402 , Y02C20/30
摘要： PFC is recycled from a gas mixture using adsorption technology and techniques. Two adsorption units each include an adsorbent having a selectivity by which the PFC is selectively adsorbed with respect to the other gas(es) that make up the mixture. The gas mixture is selectively supplied to one of the first and second adsorption units and a condition is created in the first adsorption unit so that the PFC is adsorbed in the first adsorption unit. Once the adsorbent is saturated in the first adsorption unit, a condition is created in the first adsorption unit that causes the PFC to be desorbed. At this time, the gas mixture is selectively supplied to the second adsorption unit, and a condition is created in the second adsorption unit so that the PFC is adsorbed. Once the adsorbent is saturated in the second adsorption unit, a condition is created in the second adsorption unit that causes the PFC to be desorbed. High-purity PFC gas can be obtained from the exhaust gas even if the gas mixture is exhaust gas of a semiconductor device manufacturing process having a low concentration of PFC.
摘要翻译：使用吸附技术和技术，从气体混合物回收PFC。两个吸附单元各自包括具有选择性的吸附剂，通过该吸附剂相对于构成混合物的其它气体选择性地吸附PFC。气体混合物被选择性地供应到第一和第二吸附单元之一，并且在第一吸附单元中产生条件，使得PFC吸附在第一吸附单元中。一旦吸附剂在第一吸附单元中饱和，则在第一吸附单元中产生使PFC解吸的条件。此时，将气体混合物选择性地供给到第二吸附单元，并且在第二吸附单元中产生条件以使PFC被吸附。一旦吸附剂在第二吸附单元中饱和，则在引起PFC解吸的第二吸附单元中产生一个条件。即使气体混合物是具有低浓度PFC的半导体器件制造方法的废气，也可以从废气中获得高纯度PFC气体。

59. 发明申请

US20070013901A1 OPTICAL INSPECTION TOOL HAVING LENS UNIT WITH MULTIPLE BEAM PATHS FOR DETECTING SURFACE DEFECTS OF A SUBSTRATE AND METHODS OF USING SAME 有权
标题翻译：具有用于检测基板的表面缺陷的多个光束的透镜单元的光学检查工具及其使用方法
公开(公告)号：US20070013901A1
公开(公告)日：2007-01-18
申请号：US11423677
申请日：2006-06-12
申请人： Jong-An Kim , Dong-Chun Lee , Chung-Sam Jun , Ik-Chul Kim , Sang-Hee Kim
发明人： Jong-An Kim , Dong-Chun Lee , Chung-Sam Jun , Ik-Chul Kim , Sang-Hee Kim
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N2021/8825
摘要： An optical inspection tool used to detect surface defects of a substrate include a chuck for holding a substrate and a lens unit disposed over the chuck. The lens unit includes at least a pair of oblique beam paths therein, wherein light penetrating the beam paths travels without angular deflection. The beam paths take the form of spaces formed through the lens unit, or flat portions formed on a lens within the lens unit. A camera is installed on the lens unit, and the camera converts light passing through the lens unit into an image. Methods of detecting surface defects of the substrate using the inspection tool are also provided.
摘要翻译：用于检测基板的表面缺陷的光学检查工具包括用于保持基板的卡盘和设置在卡盘上方的透镜单元。透镜单元在其中包括至少一对倾斜光束路径，其中穿透光束路径的光行进而没有角度偏转。光束路径采取通过透镜单元形成的空间的形式，或形成在透镜单元内的透镜上的平坦部分。相机安装在镜头单元上，相机将通过镜头单元的光转换为图像。还提供了使用检查工具检测基板的表面缺陷的方法。

60. 发明申请

US20060082766A1 Method of inspecting defects and apparatus for performing the same 有权
标题翻译：检查缺陷的方法及其执行装置
公开(公告)号：US20060082766A1
公开(公告)日：2006-04-20
申请号：US11253028
申请日：2005-10-17
申请人： Joung-Soo Kim , Sang-Mun Chon , Chung-Sam Jun , Yu-Sin Yang
发明人： Joung-Soo Kim , Sang-Mun Chon , Chung-Sam Jun , Yu-Sin Yang
IPC分类号： G01N21/88
CPC分类号： G01N21/95607 , G01N21/21 , G01N21/47
摘要： In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.
摘要翻译：在检查缺陷的方法中，基于作为检查条件的第一特征参数来检查实际物体的第一实际区域。确定实际物体的检查区域从第一实际区域变为第二实际区域的点。然后基于作为检查条件的第二特征参数检查第二实际区域。第一和第二参数可以包括从参考对象反射的光的对比度，光的强度，光的亮度，参考对象上的微小结构的大小等。每个参考区域的特征参数在参考对象被设置。因此，可以将缺陷精确地分类，从而可以显着降低检查缺陷的时间和成本。

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