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51. 发明申请

US20120016837A1 MERGING APPARATUS, MERGING METHOD, AND MERGING PROGRAM 有权
标题翻译：合并设备，合并方法和合并程序
公开(公告)号：US20120016837A1
公开(公告)日：2012-01-19
申请号：US13240316
申请日：2011-09-22
申请人： Satoshi Matsuda , Kenichi Shimazaki , Kazunao Muramoto
发明人： Satoshi Matsuda , Kenichi Shimazaki , Kazunao Muramoto
IPC分类号： G06F17/30
CPC分类号： G06F17/30498 , G06F17/30566
摘要： A merging apparatus includes a first database in which a plurality of attributes including a key attribute that is set in advance as a key for merging is set and a second database in which one or a plurality of attributes excluding the key attribute is set. Furthermore, the merging apparatus checks an attribute that is set in the first database against an attribute that is set in the second database and extracts a common attribute that is set in common in both the first database and the second database. Then, the merging apparatus merges the first database with the second database by determining whether attribute values classified under the extracted common attribute match.
摘要翻译：合并装置包括：第一数据库，其中设置包括预先设置为用于合并的键的密钥属性的多个属性，以及第二数据库，其中设置除了密钥属性之外的一个或多个属性。此外，合并装置根据在第二数据库中设置的属性来检查在第一数据库中设置的属性，并提取在第一数据库和第二数据库中共同设置的公共属性。然后，合并装置通过确定分类在所提取的公共属性下的属性值是否匹配，将第一数据库与第二数据库合并。

52. 发明授权

US08043912B2 Manufacturing method of a semiconductor device having polycide wiring layer 失效
标题翻译：具有多晶硅布线层的半导体器件的制造方法
公开(公告)号：US08043912B2
公开(公告)日：2011-10-25
申请号：US11976515
申请日：2007-10-25
申请人： Satoshi Matsuda
发明人： Satoshi Matsuda
IPC分类号： C23C16/42 , H01L21/8242
CPC分类号： H01L27/10891 , H01L21/76838 , H01L21/76889 , H01L23/53271 , H01L27/0207 , H01L27/10861 , H01L27/10894 , H01L29/945 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided with a semiconductor substrate comprising element isolation regions and an element region surrounded by the element isolation regions, a first polysilicon layer formed in the element region of the semiconductor substrate, an element-isolating insulation film formed in the element isolation region of the semiconductor substrate, a second polysilicon layer formed on the element-isolating insulation film, a first silicide layer formed on the first polysilicon layer. And the device further comprising a second silicide layer formed on the second polysilicon layer and being thicker than the first silicide layer.
摘要翻译：半导体器件设置有包括元件隔离区域和由元件隔离区域包围的元件区域的半导体衬底，形成在半导体衬底的元件区域中的第一多晶硅层，形成在元件隔离区域中的元件隔离绝缘膜形成在所述元件隔离绝缘膜上的第二多晶硅层，形成在所述第一多晶硅层上的第一硅化物层。并且该器件还包括形成在第二多晶硅层上并且比第一硅化物层厚的第二硅化物层。

53. 发明申请

US20100261550A1 COLORED GOLF BALL 有权
标题翻译：彩色高尔夫球
公开(公告)号：US20100261550A1
公开(公告)日：2010-10-14
申请号：US12487096
申请日：2009-06-18
申请人： Hiroyuki Nagasawa , Satoshi Matsuda
发明人： Hiroyuki Nagasawa , Satoshi Matsuda
IPC分类号： A63B37/12 , A63B43/00
CPC分类号： A63B37/12 , A63B37/0022 , A63B37/0024 , A63B37/0033 , A63B37/0075 , A63B43/008
摘要： In a golf ball composed of a core, a cover of at least one layer encasing the core, and a coat of paint applied to a surface of an outermost layer of the cover, the outermost layer of the cover or the coat of paint is colored with a fluorescent pigment. The ball has a color tone, at a measurement area diameter of 5 mm in a method of measuring the color of a reflecting object according to JIS Z-8722, which satisfies specific conditions in the Lab color system. The ball is endowed with an excellent spin performance and durability, an appearance characterized by outstanding visibility, stylishness and luxury, and an excellent weather resistance.
摘要翻译：在由芯构成的高尔夫球中，至少包含芯的一层的覆盖物和涂覆在该盖的最外层的表面上的涂层涂层，该涂层的最外层或涂层涂层着色与荧光颜料。根据JIS Z-8722的测定反射物体的颜色的方法，测定区域直径为5mm的球体，其满足Lab色彩系统的特定条件。该球具有优异的旋转性能和耐久性，外观以出众的可见性，时尚性和豪华性而闻名，具有优异的耐候性。

54. 发明授权

US07564093B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07564093B2
公开(公告)日：2009-07-21
申请号：US11519050
申请日：2006-09-12
申请人： Satoshi Matsuda
发明人： Satoshi Matsuda
IPC分类号： H01L29/788 , H01L21/8238
CPC分类号： H01L27/1104
摘要： A semiconductor device comprises static random access memory (SRAM) cells formed in a semiconductor substrate, first deep trenches isolating each boundary of an n-well and a p-well of the SRAM cells, second deep trenches isolating the SRAM cells into each unit bit cell, and at least one or more contacts taking substance voltage potentials in regions isolated by the first and second deep trenches. Then, the device becomes possible to improve a soft error resistance without increasing the device in size.
摘要翻译：半导体器件包括形成在半导体衬底中的静态随机存取存储器（SRAM）单元，隔离SRAM单元的n阱和p阱的每个边界的第一深沟槽，将SRAM单元隔离成每个单元位的第二深沟槽电池，以及至少一个或多个触点，在由第一和第二深沟槽隔离的区域中获取物质电压电位。然后，该装置可以在不增加设备尺寸的情况下提高柔软的抗错误性。

55. 发明授权

US07288470B2 Semiconductor device comprising buried channel region and method for manufacturing the same 失效
标题翻译：包括掩埋沟道区的半导体器件及其制造方法
公开(公告)号：US07288470B2
公开(公告)日：2007-10-30
申请号：US11727735
申请日：2007-03-28
申请人： Satoshi Matsuda , Atsushi Azuma
发明人： Satoshi Matsuda , Atsushi Azuma
IPC分类号： H01L21/3205
CPC分类号： H01L29/66537 , H01L21/266 , H01L21/28079 , H01L21/28114 , H01L29/1083 , H01L29/42368 , H01L29/42376 , H01L29/495 , H01L29/66545 , H01L29/6656 , H01L29/7838
摘要： A semiconductor device includes a gate insulating film formed on a semiconductor substrate between first diffusion layers, a gate electrode including a first gate portion formed on the gate insulating film and a second gate portion formed on the first gate portion, a first width in a channel direction of the first gate portion being substantially equal to a width in that of the gate insulating film, and a second width in the channel direction of the second gate portion being larger than the first width, a gate side wall insulating film including a first side wall portion formed on a side surface of the first gate portion and the gate insulating film and a second side wall portion formed on a side surface of the second gate portion, and a second diffusion layer formed apart from the first diffusion layers below the gate insulating film.
摘要翻译：半导体器件包括形成在第一扩散层之间的半导体衬底上的栅极绝缘膜，包括形成在栅极绝缘膜上的第一栅极部分的栅电极和形成在第一栅极部分上的第二栅极部分，沟道中的第一宽度第一栅极部分的方向基本上等于栅极绝缘膜的宽度，并且第二栅极部分的沟道方向上的第二宽度大于第一宽度;栅极侧壁绝缘膜，包括第一侧形成在第一栅极部分和栅极绝缘膜的侧表面上的壁部分和形成在第二栅极部分的侧表面上的第二侧壁部分，以及与栅极绝缘下方的第一扩散层分开形成的第二扩散层电影。

56. 发明授权

US07268097B2 Desulfurizing agent for hydrocarbon derived from petroleum, method for producing hydrogen for use in fuel cell and method for producing nickel-based desulfurizing agent 失效
标题翻译：用于石油的烃的脱硫剂，燃料电池用氢的制造方法以及镍系脱硫剂的制造方法
公开(公告)号：US07268097B2
公开(公告)日：2007-09-11
申请号：US10221199
申请日：2001-04-02
申请人： Hisashi Katsuno , Satoshi Matsuda , Kazuhito Saito , Masahiro Yoshinaka
发明人： Hisashi Katsuno , Satoshi Matsuda , Kazuhito Saito , Masahiro Yoshinaka
IPC分类号： B01J21/00 , B01J23/32 , C01B3/26 , C01B3/02 , C01B17/34
CPC分类号： B01J20/0244 , B01J20/0207 , B01J20/0222 , B01J20/0225 , B01J20/0233 , B01J20/0237 , B01J20/04 , B01J20/16 , B01J20/3204 , B01J20/3236 , B01J21/12 , B01J23/70 , B01J23/755 , B01J23/78 , B01J23/80 , B01J23/83 , B01J23/8892 , B01J23/8926 , B01J35/1019 , B01J35/1061 , B01J37/03 , C01B3/38 , C01B2203/0233 , C01B2203/066 , C01B2203/1041 , C01B2203/1058 , C01B2203/1064 , C01B2203/107 , C01B2203/1235 , C01B2203/127 , C10G25/003 , H01M8/0662 , Y02P20/52 , Y10S502/517
摘要： A desulfurizing agent comprising a silica-alumina carrier having an Si/Al mole ratio of 10 or less and nickel carried thereon; a desulfurizing agent for hydrocarbons derived from petroleum which comprises a carrier and a metal component carried thereon and has a specific surface area of pores having a pore diameter of 3 nm or less of 100 m2/g or more; an Ni-Cu based desulfurizing agent comprising a carrier and, carried thereon, (A) nickel, (B) copper, and (C) an alkali metal or another metal; a desulfurizing agent for hydrocarbons derived from petroleum which comprises a carrier and a metal component carried thereon and has a hydrogen adsorption capacity of 0.4 mmol/g or more; and methods for producing these nickel-based and nickel-copper-based desulfurizing agents. The above desulfurizing agents are capable of adsorbing and removing with good efficiency the sulfur contained in hydrocarbons derived from petroleum to a content of 0.2 wt. ppm or less and have a long service life. The steam reforming of hydrocarbons derived from petroleum having been desulfurized by use of any one of the above desulfurizing agents allows the production of hydrogen for use in a fuel cell with good efficiency.
摘要翻译：一种脱硫剂，其含有Si / Al摩尔比为10以下的二氧化硅 - 氧化铝载体和负载在其上的镍。一种来自石油的烃的脱硫剂，其包含载体和载体上的金属组分，并且具有孔径为3nm以下的孔的比表面积为100m 2 / g以上 ; （A）镍，（B）铜和（C）碱金属或其他金属的载体和载体上的Ni-Cu基脱硫剂; 来自石油的烃的脱硫剂，其包含载体和载体上的金属组分，并且具有0.4mmol / g以上的氢吸附能力; 以及用于制造这些镍基和镍 - 铜基脱硫剂的方法。上述脱硫剂能够以高效率吸附和除去来自石油的烃中所含的硫至0.2重量％的含量。 ppm以下，使用寿命长。通过使用上述脱硫剂中的任何一种脱硫后的来自石油的烃的蒸汽重整，能够以高效率生产用于燃料电池的氢。

57. 发明授权

US07183168B2 Method of manufacturing a semiconductor device having a silicide film 失效
标题翻译：制造具有硅化物膜的半导体器件的方法
公开(公告)号：US07183168B2
公开(公告)日：2007-02-27
申请号：US11001334
申请日：2004-12-02
申请人： Satoshi Matsuda , Kazuya Ohuchi
发明人： Satoshi Matsuda , Kazuya Ohuchi
IPC分类号： H01L21/336 , H01L21/3205 , H01L21/4763
CPC分类号： H01L29/861 , H01L21/2807 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L21/82385 , H01L21/823871 , H01L29/16 , H01L29/665
摘要： A method of manufacturing a semiconductor device includes implanting germanium ions into a selected portion of a semiconductor region containing at least silicon, forming P-type and N-type diffusion layers in the semiconductor region, and forming a suicide film which extends from the N type diffusion layer over to the boundary region and the P-type diffusion layer. A boundary region between the P-type and N-type diffusion layers is formed in the selected portion.
摘要翻译：一种制造半导体器件的方法包括将锗离子注入到至少含有硅的半导体区域的选定部分中，在半导体区域中形成P型和N型扩散层，并形成从N型延伸的硅化物膜扩散层到边界区域和P型扩散层。在所选择的部分中形成P型和N型扩散层之间的边界区域。

58. 发明授权

US06841429B2 Method of manufacturing a semiconductor device having a silicide film 失效
标题翻译：制造具有硅化物膜的半导体器件的方法
公开(公告)号：US06841429B2
公开(公告)日：2005-01-11
申请号：US10716142
申请日：2003-11-19
申请人： Satoshi Matsuda , Kazuya Ohuchi
发明人： Satoshi Matsuda , Kazuya Ohuchi
IPC分类号： H01L21/28 , H01L21/00 , H01L21/336 , H01L21/8238 , H01L21/8244 , H01L21/84 , H01L27/01 , H01L27/092 , H01L27/11 , H01L27/12 , H01L29/16 , H01L29/423 , H01L29/49 , H01L29/76 , H01L29/78 , H01L29/861 , H01L31/0392 , H01L31/113 , H01L31/117 , H01L31/119
CPC分类号： H01L29/861 , H01L21/2807 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L21/82385 , H01L21/823871 , H01L29/16 , H01L29/665
摘要： A semiconductor device is disclosed. The device includes a semiconductor region and P-type and N-type diffusion layers formed in the semiconductor region. The semiconductor region includes a germanium low-concentration region containing germanium of low concentration and a germanium high-concentration region containing germanium of high concentration. A boundary region between the P-type and N-type diffusion layers lies in the germanium high-concentration region. A silicide film is formed to extend from the P-type diffusion layer over to the boundary region and the N-type diffusion layer.
摘要翻译：公开了一种半导体器件。该器件包括形成在半导体区域中的半导体区域和P型和N型扩散层。半导体区域包括含有低浓度锗的锗低浓度区域和含有高浓度锗的锗高浓度区域。 P型和N型扩散层之间的边界区域位于锗高浓度区域中。形成硅化物膜从P型扩散层延伸到边界区域和N型扩散层。

59. 发明授权

US06677660B1 Semiconductor device having silicide film 失效
标题翻译：具有硅化物膜的半导体器件
公开(公告)号：US06677660B1
公开(公告)日：2004-01-13
申请号：US10241488
申请日：2002-09-12
申请人： Satoshi Matsuda , Kazuya Ohuchi
发明人： Satoshi Matsuda , Kazuya Ohuchi
IPC分类号： H01L2976
CPC分类号： H01L29/861 , H01L21/2807 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L21/82385 , H01L21/823871 , H01L29/16 , H01L29/665
摘要： A semiconductor device is disclosed. The device includes a semiconductor region and P-type and N-type diffusion layers formed in the semiconductor region. The semiconductor region includes a germanium low-concentration region containing germanium of low concentration and a germanium high-concentration region containing germanium of high concentration. A boundary region between the P-type and N-type diffusion layers lies in the germanium high-concentration region. A silicide film is formed to extend from the P-type diffusion layer over to the boundary region and the N-type diffusion layer.
摘要翻译：公开了一种半导体器件。该器件包括形成在半导体区域中的半导体区域和P型和N型扩散层。半导体区域包括含有低浓度锗的锗低浓度区域和含有高浓度锗的锗高浓度区域。 P型和N型扩散层之间的边界区域位于锗高浓度区域中。形成硅化物膜从P型扩散层延伸到边界区域和N型扩散层。

60. 发明授权

US06649462B2 Semiconductor device and method of manufacturing the same including T-shaped gate 有权
标题翻译：半导体器件及其制造方法包括T形栅极
公开(公告)号：US06649462B2
公开(公告)日：2003-11-18
申请号：US10292579
申请日：2002-11-13
申请人： Atsushi Azuma , Satoshi Matsuda
发明人： Atsushi Azuma , Satoshi Matsuda
IPC分类号： H01L218238
CPC分类号： H01L29/6653 , H01L21/28079 , H01L21/28114 , H01L29/42376 , H01L29/495 , H01L29/66545 , H01L29/6656 , H01L2924/0002 , Y10S438/926 , H01L2924/00
摘要： A gate insulating film is provided on a channel region. A gate electrode includes a lower part and an upper part. The lower part has a lower surface and sides, and the upper part has a lower surface. The lower surface of the lower part contacts the gate insulating film. The upper part is longer than the lower part in a lengthwise direction of a gate electrode. The first insulating film is interposed between the lower surface of the upper part of the gate electrode and a semiconductor substrate. The first insulating film surrounds at least the sides of the lower part of the gate electrode, which face drain and source regions, and having parts interposed between the lower surface of the upper part of the gate electrode and the semiconductor substrate and made thicker than the other parts.
摘要翻译：栅极绝缘膜设置在沟道区域上。栅电极包括下部和上部。下部具有下表面和侧面，并且上部具有下表面。下部的下表面与栅极绝缘膜接触。上部比栅电极长度方向的下部长。第一绝缘膜插入在栅电极的上部的下表面和半导体衬底之间。第一绝缘膜至少包围栅电极的下部的面向漏极和源极区域的侧面，并且具有插入在栅电极的上部的下表面和半导体衬底之间的部分，并且被制成比其他部分。

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