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    • 52. 发明授权
    • Exposure apparatus including an optical system for aligning a reticle
and a wafer
    • 曝光装置包括用于对准掩模版和晶片的光学系统
    • US4771180A
    • 1988-09-13
    • US916738
    • 1986-10-08
    • Noboru NomuraKazuhiro Yamashita
    • Noboru NomuraKazuhiro Yamashita
    • G03F9/00G01N21/86
    • G03F9/7049
    • A reduction projection type alignment and exposure apparatus having a light source, for alignment, a reticle having at least a first grating, first lens system, a spatial filter disposed around a Fourier spectral plane of the first lens system, second lens system, a wafer having at least a second grating, and a photo-detector for detecting light intensity of superimposed beams appearing on the spatial filter. An optical system for light exposure is provided separately from the optical system for alignment which includes the light source for alignment, first and second lens system, spatial filter, etc. The light beam generated from the light source for alignment is applied to the reticle at which it is divided into a plurality of difracted light beams by the first grating, and the diffracted light beams are applied through the first lens system, spatial filter and second lens system onto the wafer so that the diffracted light beams are re-diffracted by the second grating, and the re-diffracted light beams are superimposed with the diffracted light beams and the light intensity of the superimposed beams detected by the photo-detector.
    • 一种缩小投影型对准和曝光装置,具有用于对准的光源,具有至少第一光栅的掩模版,第一透镜系统,设置在第一透镜系统的傅立叶光谱平面附近的空间滤光器,第二透镜系统,晶片 具有至少第二光栅,以及用于检测出现在空间滤光片上的叠加光束的光强度的光检测器。 与用于对准的光学系统分开设置用于曝光的光学系统,其包括用于对准的光源,第一和第二透镜系统,空间滤光器等。从用于对准的光源产生的光束被施加到掩模版 将其通过第一光栅分割为多个衍射光束,并且将衍射光束通过第一透镜系统,空间滤光器和第二透镜系统施加到晶片上,使得衍射光束被衍射的光束 并且再衍射光束与衍射光束叠加,并且由光检测器检测到的叠加光束的光强度。
    • 55. 发明授权
    • Display device and method for manufacturing the same
    • 显示装置及其制造方法
    • US06985132B2
    • 2006-01-10
    • US09995511
    • 2001-11-27
    • Noboru NomuraTohru NakagawaMasahiro NagasawaTadashi Ootake
    • Noboru NomuraTohru NakagawaMasahiro NagasawaTadashi Ootake
    • G09G3/34
    • G09F9/372
    • A display device using a cylinder-shaped pixel having a large dipole moment and high response speed and a method for manufacturing the same. In the display device, an organic film is bonded and fixed to a part of or an entire surface of a base material having a volume of less than 1 cm3 via —A—O— bond, where A denotes Si, Ge, Sn, Ti or Zr, or via —A—N— bond, where A denotes Si, Ge, Sn, Ti or Zr, in the former, the side of O is bonded to the substrate and in the latter, the side of N is bonded to the substrate; the surface region of the base material is divided into two regions in accordance with the kind of organic films or the presence or absence of the organic film, and each of the two regions accounting for 40% or more and 60% or less of the surface area of the base material, a plurality of charged substances in different charged states or with opposite polarities in the two regions. The plurality of charged substances are dipped in liquid between a pair of substrates each having an electrode, and voltage is applied to the electrode, thereby enabling the charged substances to be rotated.
    • 使用具有大偶极矩和高响应速度的圆柱形像素的显示装置及其制造方法。 在显示装置中,有机膜通过-AO键键合并固定在体积小于1cm 3的基材的一部分或整个表面上,其中A表示Si ,Ge,Sn,Ti或Zr,或通过-AN-键,其中A表示Si,Ge,Sn,Ti或Zr,在前者中,O的一面与基底结合,而在后者中, N结合到基底上; 基材的表面区域根据有机膜的种类或有机膜的有无分为两个区域,两个区域中的每一个占表面积的40%以上且60%以下 基底材料的面积,在两个区域中具有不同充电状态或具有相反极性的多个带电物质。 将多个带电物质浸渍在各自具有电极的一对基板之间的液体中,并且向电极施加电压,从而使带电物质能够旋转。
    • 59. 发明授权
    • Plasma source for etching
    • 用于蚀刻的等离子体源
    • US5593539A
    • 1997-01-14
    • US224960
    • 1994-04-08
    • Masafumi KubotaNoboru NomuraTokuhiko Tamaki
    • Masafumi KubotaNoboru NomuraTokuhiko Tamaki
    • H01J37/32B44C1/22
    • H01J37/32091H01J37/32155H01J37/32165
    • An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.
    • 公开了一种用于产生等离子体的装置。 该装置包括:等离子体室; 成对平行板电极; 以及用于在所述电极对上施加高频功率的电源。 调整高频功率的频率和高频功率之间的相位差,使得等离子体中的每个电子以圆形路径移动。 通过利用形成在平行板电极之间的高频电场中的电子的振荡,旋转或摆线运动的现象,在低压水平下产生致密且高度均匀的等离子体。 该等离子体适用于LSI制造工艺中的蚀刻。
    • 60. 发明授权
    • Plasma source for etching
    • 用于蚀刻的等离子体源
    • US5330606A
    • 1994-07-19
    • US805864
    • 1991-12-10
    • Masafumi KubotaNoboru NomuraTokuhiko Tamaki
    • Masafumi KubotaNoboru NomuraTokuhiko Tamaki
    • H01J37/32H01L21/00
    • H01J37/32091H01J37/32155H01J37/32165
    • An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.
    • 公开了一种用于产生等离子体的装置。 该装置包括:等离子体室; 成对平行板电极; 以及用于在所述电极对上施加高频功率的电源。 调整高频功率的频率和高频功率之间的相位差,使得等离子体中的每个电子以圆形路径移动。 通过利用在平行板电极之间形成的高频电场中的电子的振荡,旋转或摆线运动的现象,在低压水平下产生致密且高度均匀的等离子体。 该等离子体适用于在LSI制造工艺中的蚀刻。