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51. 发明授权

US06177646B1 Method and device for plasma treatment 有权
标题翻译：等离子体处理的方法和装置
公开(公告)号：US06177646B1
公开(公告)日：2001-01-23
申请号：US09180974
申请日：1998-11-17
申请人： Tomohiro Okumura , Ichiro Nakayama , Shozo Watanabe , Hideo Haraguchi
发明人： Tomohiro Okumura , Ichiro Nakayama , Shozo Watanabe , Hideo Haraguchi
IPC分类号： B23K900
CPC分类号： H01J37/32522 , H01J37/321 , H01L21/3065
摘要： Plasma is generated in a vacuum chamber (1) by supplying high frequency power to a spiral antenna (5) from an antenna-use high frequency power source (4) and by supplying high frequency power to an electrode (6) by an electrode-use high frequency power source (8) in a state where evacuating a vacuum chamber (1) while introducing a specified gas into the vacuum chamber, thereby controlling the vacuum chamber at a predetermined pressure. Plasma processing such as etching is performed on a substrate (7) located on the electrode (6), the interior of the vacuum chamber is heated to 80° C. or higher, wherein a resistance-heating heater (11) constituted of a heating element shielded from electromagnetic waves by a conductive sheath and a pressure-weld type thermocouple (10) provided on a dielectric body (9) are connected to a temperature adjuster (12). A insulating material (13) is arranged between the heater (11) and the antenna (5), and an inner chamber (16) including a belt heater (22) is also arranged.
摘要翻译：通过从天线用高频电源（4）向螺旋天线（5）提供高频电力，并通过电极 - 电极（6）向电极（6）供给高频电力，在真空室（1）中产生等离子体，在将特定气体引入真空室的同时，在真空室（1）抽真空的状态下使用高频电源（8），从而将真空室控制在规定的压力。在位于电极（6）的基板（7）上进行蚀刻等离子体处理，将真空室的内部加热至80℃以上，由加热通过导电护套屏蔽电磁波的元件和设置在电介质体（9）上的压焊型热电偶（10）连接到温度调节器（12）。绝热材料（13）设置在加热器（11）和天线（5）之间，并且还布置有包括带加热器（22）的内室（16）。

52. 发明授权

US5922223A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5922223A
公开(公告)日：1999-07-13
申请号：US749847
申请日：1996-11-15
申请人： Tomohiro Okumura , Hideo Haraguchi , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Hideo Haraguchi , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32522 , H01J37/321
摘要： A plasma processing method and apparatus, wherein evaluation is effected while a suitable gas is introduced into a vacuum vessel, and then a high frequency voltage is applied by a high frequency discharge coil power source to a spiral discharge coil while the interior of the vacuum vessel is kept under adequate pressure, whereby a high frequency magnetic field is generated within the vacuum vessel through a dielectric plate so that electrons are accelerated by an induction field due to the high frequency magnetic field to generate plasma within the vacuum vessel for processing a substrate, characterized in that the dielectric plate is heated by a planar heater to 80.degree. C. or more, whereby the thickness of a thin film to be deposited on the dielectric plate is substantially reduced thereby to inhibit dust generation and thus substantially reduce the frequency of maintenance required for the dielectric plate. The apparatus includes a ceramic plate formed with a discharge coil fixing groove and mounted on the dielectric plate, and the planar spiral discharge coil is mounted on the ceramic plate.
摘要翻译：一种等离子体处理方法和装置，其中在合适的气体被引入真空容器中时进行评价，然后通过高频放电线圈电源将高频电压施加到螺旋放电线圈，同时真空容器的内部保持在足够的压力下，由此通过电介质板在真空容器内产生高频磁场，使得由于高频磁场而通过感应场加速电子，以在真空容器内产生用于处理衬底的等离子体，其特征在于，通过平面加热器将电介质板加热至80℃以上，由此沉积在电介质板上的薄膜的厚度大大降低，从而抑制灰尘产生，从而显着降低维护频率电介质板所需的。该装置包括形成有放电线圈固定槽并安装在电介质板上的陶瓷板，并且平面螺旋放电线圈安装在陶瓷板上。

53. 发明授权

US08550734B2 Transportation guide mechanism and recording device having the same 有权
标题翻译：运输导向机构和具有相同的记录装置
公开(公告)号：US08550734B2
公开(公告)日：2013-10-08
申请号：US12550308
申请日：2009-08-28
申请人： Ichiro Nakayama
发明人： Ichiro Nakayama
IPC分类号： B41J13/00
CPC分类号： B65H35/04 , B65H29/52 , B65H2404/611 , B65H2408/13 , B65H2511/20 , B65H2601/11 , B65H2701/1936 , B65H2220/01 , B65H2220/11 , B65H2220/08
摘要： A transportation guide mechanism and a recording device having the transportation guide mechanism can smoothly and stably discharge sheet media without impairing the ease of maintenance. The transportation guide mechanism 61 is disposed between the paper exit 4 of a paper feed mechanism 3 that can open and close to the printing unit 2 and a ticket transportation path 12 through which recording paper P discharged from the paper feed mechanism 3 passes, and guides the recording paper P discharged from the paper exit 4 to the ticket transportation path 12. The transportation guide mechanism 61 has a bottom guide panel 63 that renders the guide path 64 through which the recording paper P can pass. The bottom guide panel 63 is supported so that it is pushed by the paper feed mechanism 3 opening and closing to the printing unit 2 and can be displaced to a position outside the path of paper feed mechanism 3 movement.
摘要翻译：具有输送引导机构的输送引导机构和记录装置能够平滑且稳定地排出纸介质而不损害维护的便利性。输送引导机构61设置在可以打开和关闭打印单元2的供纸机构3的出纸口4和从进给机构3排出的记录纸P通过的票传送路径12之间，并且引导从纸张出口4排出到记录纸传送路径12的记录纸P.输送引导机构61具有底部引导面板63，该引导面板63使得记录纸P能通过的引导路径64。底部引导面板63被支撑，使得其被打印机构3打开和关闭到打印单元2被推动，并且可以移动到进纸机构3的运动路径外侧的位置。

54. 发明申请

US20130081694A1 POLYCRYSTALLINE-TYPE SOLAR CELL PANEL AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：多晶型太阳能电池板及其制造方法
公开(公告)号：US20130081694A1
公开(公告)日：2013-04-04
申请号：US13635962
申请日：2011-06-17
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Chido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Chido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/18 , H01L31/0368
CPC分类号： H01L31/182 , H01L31/03682 , Y02E10/546 , Y02P70/521
摘要： Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
摘要翻译：公开了通过以简单的方式形成具有PN结的多晶硅膜，可以以低成本生产的多晶硅系太阳能电池。具体地，通过使用含掺杂剂的硅靶溅射制造的非晶硅膜通过等离子体多晶化，并且在非晶硅膜中形成PN结，从而制造具有PN结的多晶硅膜。具有PN结的多晶硅膜用作多晶硅太阳能电池的硅衬底。还公开了一种从硅锭生产含掺杂剂的硅靶的技术。

55. 发明申请

US20120325777A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20120325777A1
公开(公告)日：2012-12-27
申请号：US13582557
申请日：2011-05-11
申请人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
发明人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
IPC分类号： H01L21/465 , B44C1/22 , C23C16/50
CPC分类号： H05H1/30 , H01J37/3211 , H01J37/32376 , H01J37/32825 , H01L21/324
摘要： A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.
摘要翻译：基材放置在基材放置台的基材放置面上。电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室，该圆柱形腔体由绝缘材料构成，并设置有矩形裂缝状等离子体喷射口，并且盖住气缸的相对端部，气体喷射口将气体供应到圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。通过向螺线管线圈提供高频电力的高频电源，在圆筒形室中产生等离子体，等离子体从等离子体喷射口发射到基体材料。在相对移动等离子体焰炬单元和基材放置台的同时，可以对基材表面进行热处理。

56. 发明申请

US20120186519A1 PLASMA DOPING METHOD AND APPARATUS 审中-公开
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20120186519A1
公开(公告)日：2012-07-26
申请号：US13358277
申请日：2012-01-25
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： C23C16/50
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。通过压力调节阀将真空容器内的压力保持在规定值。将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

57. 发明申请

US20120115317A1 PLASMA DOPING METHOD AND APPARATUS THEREOF 有权
标题翻译：等离子喷涂方法及其设备
公开(公告)号：US20120115317A1
公开(公告)日：2012-05-10
申请号：US13291186
申请日：2011-11-08
申请人： Tomohiro OKUMURA , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
发明人： Tomohiro OKUMURA , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
IPC分类号： H01L21/223 , C23C16/455 , C23C16/458 , C23C16/50
CPC分类号： H01J37/32412 , H01L21/2236 , H01L31/18
摘要： In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.
摘要翻译：在等离子体焰炬单元中，具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部，并且在其周边设置有黄铜块。当气体被供应到圆柱形腔室中时，向导体杆供应高频电力，并且在圆柱形腔室中产生等离子体，使得等离子体照射基材。

58. 发明授权

US07666770B2 Method of controlling impurity doping and impurity doping apparatus 失效
标题翻译：控制杂质掺杂和杂质掺杂装置的方法
公开(公告)号：US07666770B2
公开(公告)日：2010-02-23
申请号：US10570787
申请日：2004-09-06
申请人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/42
CPC分类号： H01L21/265
摘要： A method is provided for controlling a dose amount of dopant to be doped into an object to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of the object, the amount of ions having dopant in plasma that collide with the object, and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of the object, and a dose amount by ions from the determined amount of ions containing dopant that collide with the object; and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
摘要翻译：提供了一种方法，用于控制掺杂到等离子体掺杂中待处理物体中的掺杂剂的剂量。根据该方法，掺杂控制由以下处理形成：确定物体的温度，与物体相撞的等离子体中具有掺杂剂的离子的量以及掺杂期间的等离子体中的气体的种类; 根据物体的温度由中性气体计算剂量，以及从确定量的与物体碰撞的掺杂剂的离子的离子的剂量; 并进行掺杂，使得中性气体的剂量量与离子的剂量之和等于预定剂量的量。

59. 发明申请

US20090233383A1 Plasma Doping Method and Apparatus 审中-公开
标题翻译：等离子体掺杂法和装置
公开(公告)号：US20090233383A1
公开(公告)日：2009-09-17
申请号：US11884924
申请日：2006-02-14
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8，与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

60. 发明授权

US07547619B2 Method of introducing impurity, device and element 有权
标题翻译：引入杂质，器件和元素的方法
公开(公告)号：US07547619B2
公开(公告)日：2009-06-16
申请号：US10526999
申请日：2003-09-19
申请人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama
发明人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama
IPC分类号： H01L21/42 , H01L21/26
CPC分类号： H01L21/2236
摘要： A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a solid substance which has an oxidized film or other film sticking at the surface, the present method and apparatus first removes the oxidized film and other film using at least one means selected from among the group consisting of a means for irradiating the surface of solid substance with plasma, a means for irradiating the surface of solid substance with gas and a means for dipping the surface of solid substance in a reductive liquid; and then, attaches or introduces a certain desired particle. The way of attaching, or introducing, a particle is bringing a particle-containing gas to make contact to the surface, which surface has been made to be free of the oxidized film and other film. Thus, the particle is attached or introduced to the surface, or the vicinity, of solid substance. The component devices are those manufactured taking advantage of the above method or apparatus.
摘要翻译：引入杂质的方法和用于引入杂质的装置在较浅的轮廓中容易地形成杂质层。还公开了利用这些方法或装置制造的部件装置。当将材料引入具有在表面附着的氧化膜或其它膜的固体物质时，本方法和装置首先使用选自以下的至少一种方法除去氧化膜和其它膜：照射装置具有等离子体的固体物质的表面，用气体照射固体表面的装置和将固体物质表面浸入还原液中的装置; 然后，附加或引入某个所需的粒子。附着或引入颗粒的方法是使含颗粒的气体与表面接触，该表面已经被制成没有氧化膜和其它膜。因此，将颗粒附着或引入固体物质的表面或附近。部件装置是利用上述方法或装置制造的装置。

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