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1. 发明申请

US20120186519A1 PLASMA DOPING METHOD AND APPARATUS 审中-公开
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20120186519A1
公开(公告)日：2012-07-26
申请号：US13358277
申请日：2012-01-25
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： C23C16/50
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。通过压力调节阀将真空容器内的压力保持在规定值。将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

2. 发明申请

US20090233383A1 Plasma Doping Method and Apparatus 审中-公开
标题翻译：等离子体掺杂法和装置
公开(公告)号：US20090233383A1
公开(公告)日：2009-09-17
申请号：US11884924
申请日：2006-02-14
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8，与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

3. 发明授权

US07547619B2 Method of introducing impurity, device and element 有权
标题翻译：引入杂质，器件和元素的方法
公开(公告)号：US07547619B2
公开(公告)日：2009-06-16
申请号：US10526999
申请日：2003-09-19
申请人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama
发明人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama
IPC分类号： H01L21/42 , H01L21/26
CPC分类号： H01L21/2236
摘要： A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a solid substance which has an oxidized film or other film sticking at the surface, the present method and apparatus first removes the oxidized film and other film using at least one means selected from among the group consisting of a means for irradiating the surface of solid substance with plasma, a means for irradiating the surface of solid substance with gas and a means for dipping the surface of solid substance in a reductive liquid; and then, attaches or introduces a certain desired particle. The way of attaching, or introducing, a particle is bringing a particle-containing gas to make contact to the surface, which surface has been made to be free of the oxidized film and other film. Thus, the particle is attached or introduced to the surface, or the vicinity, of solid substance. The component devices are those manufactured taking advantage of the above method or apparatus.
摘要翻译：引入杂质的方法和用于引入杂质的装置在较浅的轮廓中容易地形成杂质层。还公开了利用这些方法或装置制造的部件装置。当将材料引入具有在表面附着的氧化膜或其它膜的固体物质时，本方法和装置首先使用选自以下的至少一种方法除去氧化膜和其它膜：照射装置具有等离子体的固体物质的表面，用气体照射固体表面的装置和将固体物质表面浸入还原液中的装置; 然后，附加或引入某个所需的粒子。附着或引入颗粒的方法是使含颗粒的气体与表面接触，该表面已经被制成没有氧化膜和其它膜。因此，将颗粒附着或引入固体物质的表面或附近。部件装置是利用上述方法或装置制造的装置。

4. 发明申请

US20080142931A1 Method of Impurity Introduction, Impurity Introduction Apparatus and Semiconductor Device Produced with Use of the Method 有权
标题翻译：杂质介绍，杂质介绍使用该方法生产的装置和半导体装置
公开(公告)号：US20080142931A1
公开(公告)日：2008-06-19
申请号：US10599205
申请日：2005-03-17
申请人： Yuichiro Sasaki , Ichiro Nakayama , Bunji Mizuno
发明人： Yuichiro Sasaki , Ichiro Nakayama , Bunji Mizuno
IPC分类号： H01L29/00 , H01L21/42
CPC分类号： H01L21/2236 , H01J37/32412 , H01L21/26513
摘要： An impurity region having a box-shaped impurity profile is formed.An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.
摘要翻译：形成具有盒状杂质分布的杂质区域。杂质引入方法包括将期望的杂质引入固体基体的表面的步骤，以及在杂质引入步骤之后将等离子体辐射到固体基体表面的步骤，从而形成具有大致盒形的杂质分布，形状。

5. 发明申请

US20070212837A1 Method And Apparatus Of Fabricating Semiconductor Device 失效
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US20070212837A1
公开(公告)日：2007-09-13
申请号：US11596372
申请日：2005-05-12
申请人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
发明人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
IPC分类号： H01L21/77
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/28035 , H01L29/7833
摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.
摘要翻译：本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。

6. 发明授权

US07192854B2 Method of plasma doping 失效
标题翻译：等离子体掺杂法
公开(公告)号：US07192854B2
公开(公告)日：2007-03-20
申请号：US10532768
申请日：2003-11-18
申请人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama , Hisataka Kanada , Tomohiro Okumura
发明人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama , Hisataka Kanada , Tomohiro Okumura
IPC分类号： H01L21/42 , H01L21/26
CPC分类号： H01L21/2236
摘要： A method of plasma doping in which dilution of B2H6 is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized in that B2H6 gas is used as a material containing doping impurity while He is used as a substance of high dissociation energy and that the concentration of B2H6 in mixed gas is less than 0.05%.
摘要翻译：可以在不降低掺杂效率的情况下进行等离子体掺杂的等离子体掺杂方法，其中使B 2 H 2 H 6的稀释最大化以提高安全性和稳定的等离子体产生和维持能力，其中可以容易地控制注入的掺杂剂的量。特别地，等离子体掺杂的方法特征在于，使用B 2 H 6 H 6气体作为含有掺杂杂质的材料，同时使用He作为高解离能的物质，混合气体中的B 2 H 6 H 6的浓度小于0.05％。

7. 发明授权

US08257501B2 Plasma doping device with gate shutter 失效
标题翻译：带闸门的等离子体掺杂装置
公开(公告)号：US08257501B2
公开(公告)日：2012-09-04
申请号：US11887323
申请日：2006-03-29
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
IPC分类号： C23C16/00
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J37/32458 , H01J37/32623 , H01J37/32633
摘要： In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).
摘要翻译：在根据本发明的等离子体掺杂装置中，在从气体供应装置（2）引入预定气体的同时，通过排气口11将真空室（1）作为排气装置用涡轮分子泵（3）抽真空），以便通过压力调节阀（4）将真空室（1）的内部保持在预定压力。高频电源（5）将13.56MHz的高频功率提供给设置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8），以产生电感耦合真空室（1）中的等离子体。提供了用于向样品电极（6）提供高频电力的高频电源（10）。通过驱动闸门（18）并覆盖通过门（16）来增强处理的均匀性。

8. 发明申请

US20110081787A1 PLASMA PROCESSING METHOD AND APPARATUS 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20110081787A1
公开(公告)日：2011-04-07
申请号：US12950048
申请日：2010-11-19
申请人： Tomohiro OKUMURA , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro OKUMURA , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/223
CPC分类号： H01J37/3244 , H01J37/32412 , H01L21/2236
摘要： With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.
摘要翻译：在真空室的内部抽真空，并且在真空室中供气进入中止状态下，在真空室内密封氦气和乙硼烷气体的混合气体的状态下，在真空容器中产生等离子体，同时向样品电极提供高频电力。通过提供给样品电极的高频功率，将硼引入到衬底表面附近。

9. 发明申请

US20110065267A1 Plasma Doping Method and Plasma Doping Apparatus 有权
标题翻译：等离子体掺杂法和等离子体掺杂装置
公开(公告)号：US20110065267A1
公开(公告)日：2011-03-17
申请号：US12952807
申请日：2010-11-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412
摘要： In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended.
摘要翻译：为了实现能够进行稳定的低密度掺杂的等离子体掺杂方法，在从气体供给装置将预定气体引入真空室的同时用泵进行排气，真空室的压力保持在预定的压力和高频功率从高频电源提供给线圈。在真空室中产生等离子体之后，真空室的压力降低，并且对放置在基板电极上的基板进行低密度等离子体掺杂。此外，真空室的压力逐渐降低，并且高频功率逐渐增加，从而对放置在基板电极上的基板进行低密度等离子体掺杂。此外，提供给基板电极的高频功率的正向功率Pf和反射功率Pr被高速采样，并且当功率差Pf-Pr相对于时间积分的值达到预定值时，高频电源的供应被暂停。

10. 发明授权

US07858479B2 Method and apparatus of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US07858479B2
公开(公告)日：2010-12-28
申请号：US11596372
申请日：2005-05-12
申请人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
发明人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
IPC分类号： H01L21/8234
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/28035 , H01L29/7833
摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.
摘要翻译：本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。

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