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51. 发明授权

US06911405B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06911405B2
公开(公告)日：2005-06-28
申请号：US09988685
申请日：2001-11-20
申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Youichi Yamamoto , Yuichiro Kotake , Hiroshi Ikakura , Shoji Ohgawara
发明人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Youichi Yamamoto , Yuichiro Kotake , Hiroshi Ikakura , Shoji Ohgawara
IPC分类号： H01L21/28 , H01L21/205 , H01L21/3105 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/3205 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L23/52 , H01L23/522 , H01L21/76 , H01L21/26 , H01L21/44
CPC分类号： H01L21/7685 , H01L21/3105 , H01L21/31116 , H01L21/3144 , H01L21/3185 , H01L21/321 , H01L21/32136 , H01L21/76826 , H01L21/76834 , H01L21/76838 , H01L21/76867 , H01L21/76886
摘要： A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.
摘要翻译：由N 2 N 2 N 2 O 2或其混合物之一组成的工艺气体被转化为等离子体，然后将铜布线层的表面暴露于等离子体的处理气体，由此将铜布线层的表面部分重整并制成铜扩散防止屏障。根据该方法，可以提供具有增加的操作速度和较少的铜扩散的贵金属半导体器件。

52. 发明授权

US06852651B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06852651B2
公开(公告)日：2005-02-08
申请号：US09967991
申请日：2001-10-02
申请人： Yoshimi Shioya , Yuichiro Kotake , Tomomi Suzuki , Hiroshi Ikakura , Kazuo Maeda
发明人： Yoshimi Shioya , Yuichiro Kotake , Tomomi Suzuki , Hiroshi Ikakura , Kazuo Maeda
IPC分类号： C23C16/42 , C23C16/40 , C23C16/509 , H01L21/205 , H01L21/312 , H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L21/469
CPC分类号： H01L21/0214 , C23C16/401 , C23C16/5096 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31608 , H01L21/31633 , H01L21/76832 , H01L21/76834
摘要： The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.
摘要翻译：半导体器件及其制造方法技术领域本发明涉及一种半导体器件，其中通过覆盖主要由铜膜制成的布线形成具有低介电常数的层间绝缘膜及其制造方法。在半导体器件的制造中，通过将成膜气体转化为等离子体来反应，在基板上形成具有低介电常数的绝缘膜。该方法包括通过将成膜气体以第一气体压力覆盖到等离子体中并在低压绝缘膜上形成高压绝缘膜，通过将成膜气体在第二气体压力下，高于第一气体压力，进入等离子体和反应。

53. 发明申请

US20050014391A1 Deposition method, method of manufacturing semiconductor device, and semiconductor device 失效
标题翻译：沉积法，制造半导体器件的方法以及半导体器件
公开(公告)号：US20050014391A1
公开(公告)日：2005-01-20
申请号：US10867178
申请日：2004-06-15
申请人： Yoshimi Shioya , Kazuo Maeda
发明人： Yoshimi Shioya , Kazuo Maeda
IPC分类号： C23C16/42 , C23C16/40 , H01L21/205 , H01L21/312 , H01L21/316 , H01L21/768 , H01L21/31
CPC分类号： H01L21/02216 , C23C16/401 , H01L21/02274 , H01L21/3121 , H01L21/3122
摘要： The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.
摘要翻译：本发明涉及一种低介电常数绝缘膜的沉积方法，其包括以下步骤：产生包含至少一个硅源的第一沉积气体，其选自含有硅氧烷键的含硅有机化合物和含硅有机化合物具有CH3基团的氧化剂和由具有烷氧基的含氧有机化合物（OR：O是氧而R是CH3或C2H5）组成的氧化剂，并且向第一沉积气体施加电力以产生等离子体，然后使反应形成低介电常数绝缘膜。

54. 发明授权

US06815824B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06815824B2
公开(公告)日：2004-11-09
申请号：US10176588
申请日：2002-06-24
申请人： Yoshimi Shioya , Yuhko Nishimoto , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura
发明人： Yoshimi Shioya , Yuhko Nishimoto , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura
IPC分类号： H01L23485
CPC分类号： H01L21/76832 , C23C16/401 , H01L21/02126 , H01L21/0214 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/3145 , H01L21/31612 , H01L21/31633 , H01L21/3185 , H01L21/76834
摘要： The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.

55. 发明授权

US06524972B1 Method for forming an interlayer insulating film, and semiconductor device 失效
标题翻译：用于形成层间绝缘膜的方法和半导体器件
公开(公告)号：US06524972B1
公开(公告)日：2003-02-25
申请号：US09521843
申请日：2000-03-09
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： H01L21469
CPC分类号： H01L21/76849 , C23C16/04 , C23C16/402 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02304 , H01L21/02315 , H01L21/02362 , H01L21/31695 , H01L21/76801 , H01L21/76819 , H01L21/7682 , H01L21/76826 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L2221/1047 , Y10S438/96
摘要： A method for forming an interlayer insulating film is disclosed. This method comprises the steps of: forming an underlying insulating film on an object to be formed; and forming a porous SiO2 film on said underlying insulating film by a Chemical Vapor Deposition that employs a source gas containing TEOS (tetraethoxy silane) and O3 where the O3 is contained in the source gas with first concentration that is lower than concentration necessary for oxidizing the TEOS. Alternative method for forming an interlayer insulating film is also disclosed. This method comprises the step of: forming an underlying insulating film on an object to be formed; performing Cl (chlorine) plasma treatment for the underlying insulating film; and forming a porous SiO2 film on the underlying insulating film by a Chemical Vapor Deposition that employs a source gas containing TEOS (tetraethoxy silane) and O3.
摘要翻译：公开了一种用于形成层间绝缘膜的方法。该方法包括以下步骤：在要形成的物体上形成底层绝缘膜; 并通过化学气相沉积在所述底层绝缘膜上形成多孔SiO 2膜，所述化学气相沉积采用含有TEOS（四乙氧基硅烷）和O 3的源气体，其中所述源气体中含有O 3的第一浓度低于氧化所需的浓度还公开了用于形成层间绝缘膜的替代方法。该方法包括以下步骤：在要形成的物体上形成下面的绝缘膜; 对下层绝缘膜进行Cl（氯）等离子体处理; 并通过采用含有TEOS（四乙氧基硅烷）和O 3的源气体的化学气相沉积在底层绝缘膜上形成多孔SiO 2膜。

56. 发明授权

US06472334B2 Film forming method, semiconductor device manufacturing method, and semiconductor device 失效
标题翻译：成膜方法，半导体装置的制造方法以及半导体装置
公开(公告)号：US06472334B2
公开(公告)日：2002-10-29
申请号：US09824106
申请日：2001-04-03
申请人： Hiroshi Ikakura , Tomomi Suzuki , Kazuo Maeda , Yoshimi Shioya , Kouichi Ohira
发明人： Hiroshi Ikakura , Tomomi Suzuki , Kazuo Maeda , Yoshimi Shioya , Kouichi Ohira
IPC分类号： H01L21469
CPC分类号： H01L21/02126 , C23C16/402 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31612
摘要： There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2.
摘要翻译：提供了通过使具有硅氧烷键的化合物和Si-R键（R为烷基）与含有氧化气体和H 2的质子化反应气体反应而在基板上形成含硅绝缘膜的方法。

57. 发明授权

US06435196B1 Impurity processing apparatus and method for cleaning impurity processing apparatus 失效
标题翻译：杂质处理装置和清洗杂质处理装置的方法
公开(公告)号：US06435196B1
公开(公告)日：2002-08-20
申请号：US09451706
申请日：1999-12-01
申请人： Noritada Satoh , Kouichi Ohira , Bunya Matsui , Kazuo Maeda
发明人： Noritada Satoh , Kouichi Ohira , Bunya Matsui , Kazuo Maeda
IPC分类号： B08B600
CPC分类号： H01L21/67028
摘要： The present invention relates to an impurity processing apparatus in which impurities such as phosphorus, boron, or the like are doped in a semiconductor substrate, etc., or a PSG (PhosphoSilicateGlass) film, a BSG (BoroSilicateGlass) film, or a BPSG (BoroPhosphoSilicateGlass) film, or a carbon film, etc. This apparatus includes a chamber having an introduction port for an impurity-containing ion gas which is connected to an impurity-containing gas supply section, a substrate holder supporting a substrate which is to be ion-injected, or doped, or on which a film is formed using the impurity-containing gas, an introduction port of a water-containing gas which is provided upstream of the substrate holder in accordance with a flow direction of the impurity-containing gas, and is connected to a water-containing gas supply section, and first plasma generating means in a space extending from the introduction port for water-containing gas to the substrate holder for converting water-containing gas to a plasma.
摘要翻译：本发明涉及在半导体衬底等中掺杂诸如磷，硼等杂质的杂质处理装置，或PSG（磷酸硅酸盐玻璃）膜，BSG（硼硅酸盐玻璃）膜或BPSG（ BoroPhospho硅酸盐玻璃）膜或碳膜等。该装置包括具有与含杂质气体供给部连接的含杂质离子气体导入口的室，支撑待离子化的基板的基板保持架注入或掺杂，或者使用含杂质的气体形成膜，根据含杂质气体的流动方向设置在衬底保持器的上游的含水气体的引入口，并且连接到含水气体供给部，并且在从含水气体的导入口延伸到用于转换含水气体的基板保持器的空间中的第一等离子体产生装置 g气体到等离子体。

58. 发明授权

US06413879B1 Method for forming an interlayer insulating film, and semiconductor device 失效
标题翻译：用于形成层间绝缘膜的方法和半导体器件
公开(公告)号：US06413879B1
公开(公告)日：2002-07-02
申请号：US09499519
申请日：2000-02-10
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： H01L2131
CPC分类号： H01L21/76849 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/02167 , H01L21/02274 , H01L21/02304 , H01L21/0234 , H01L21/02362 , H01L21/31695 , H01L21/76801 , H01L21/7682 , H01L21/76826 , H01L21/76831 , H01L21/76834 , H01L2221/1047
摘要： A method for forming an interlayer insulating film is disclosed. This method comprises the steps of: forming an Si—C film or an Si—C—H film on an underlying insulating film by performing plasma polymerization for an Si and C containing compound; forming a porous SiO2 film by performing O (oxygen) plasma oxidation for the Si—C film or the Si—C—H film; and forming a cover insulating film on the porous SiO2 film by performing H (hydrogen) plasma treatment for the porous SiO2 film.
摘要翻译：公开了一种用于形成层间绝缘膜的方法。该方法包括以下步骤：通过对含Si和C的化合物进行等离子体聚合，在下面的绝缘膜上形成Si-C膜或Si-C-H膜; 通过对Si-C膜或Si-C-H膜进行O（氧）等离子体氧化来形成多孔SiO 2膜; 并通过对多孔SiO 2膜进行H（氢）等离子体处理，在多孔SiO 2膜上形成覆盖绝缘膜。

59. 发明授权

US06352943B2 Method of film formation and method for manufacturing semiconductor device 失效
标题翻译：成膜方法及制造半导体器件的方法
公开(公告)号：US06352943B2
公开(公告)日：2002-03-05
申请号：US09157936
申请日：1998-09-22
申请人： Kazuo Maeda , Yuhko Nishimoto
发明人： Kazuo Maeda , Yuhko Nishimoto
IPC分类号： H01L2131
CPC分类号： H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31612 , H01L21/31625 , H01L21/76229
摘要： This invention relates to a method of film formation in which, when a silicon oxide film (a NSG film: a Non-doped Silicate Glass) is formed on a substrate having a recess by a CVD method using a mixed gas containing TEOS and ozone, surface dependency on the substrate is eliminated to embed a silicon oxide film into the recess of the surface. The invention includes forming a phosphorus containing insulating film as a base layer on the surface of a substrate and forming a silicon-containing insulating film on the phosphosilicate glass film by the chemical vapor deposition method, using a mixture of a ozone-containing gas and a silicon-containing gas.
摘要翻译：本发明涉及一种成膜方法，其中当使用含有TEOS和臭氧的混合气体通过CVD法在具有凹陷的衬底上形成氧化硅膜（NSG膜：非掺杂硅酸盐玻璃）时，消除了对衬底的表面依赖性，以将氧化硅膜嵌入到表面的凹部中。本发明包括在基材表面上形成含磷绝缘膜作为基底层，并通过化学气相沉积法在磷硅玻璃膜上形成含硅绝缘膜，使用含臭氧的气体和含硅气体。

60. 发明授权

US6024519A Throwaway insert for ball end mill 失效
标题翻译：球头铣刀的抛丸刀片
公开(公告)号：US6024519A
公开(公告)日：2000-02-15
申请号：US145761
申请日：1998-09-02
申请人： Syoji Okui , Shigenori Emoto , Atuhiko Maeta , Kazuo Maeda , Jun Maeda
发明人： Syoji Okui , Shigenori Emoto , Atuhiko Maeta , Kazuo Maeda , Jun Maeda
IPC分类号： B23C5/10 , B23C5/20
CPC分类号： B23C5/1045 , Y10T407/192 , Y10T407/1924 , Y10T407/21 , Y10T407/23
摘要： A throwaway insert for a ball end mill having an ideal cutting edge shape corresponding to the cutting speeds and loads at different portions of the cutting edges, high in strength and capable of discharging chips smoothly. As viewed in a direction perpendicular to the line connecting noses, each cutting edge forms a convex curve with its nose portion at the lowest level. As viewed in a direction perpendicular to the abovesaid direction, rake faces form symmetrical, downwardly sloping convex accurate surfaces or straight surfaces having a positive rake angle of 5-25.degree.. The wedge angle at the cutting edges is set at 85-65.degree.. Thus, the rake angle will be negative at the noses and positive at other portions. Further, the rake angle increases toward the side where the cutting speed is higher. The thickness of the insert increases toward the side where the load is greater. Since this insert is a modification of a negative insert, i.e. an insert of the type having a side perpendicular to its bottom, it has enough strength. Chips can be discharged smoothly too.
摘要翻译：一种用于球头铣刀的一次性刀片，其具有对应于切削刃的不同部分处的切削速度和负载的理想切削刃形状，强度高并能平滑地排出切屑。从垂直于连接鼻部的线的方向观察，每个切割刃形成凸起曲线，其鼻部部分处于最低水平。从与上述方向垂直的方向观察，前刀面形成对称的，向下倾斜的凸形精确表面或具有5-25°的正前角的直线表面。切削刃处的楔角设定在85-65°。因此，前角在鼻部为负，其他部分为正。此外，前角朝向切割速度较高的一侧增加。插入件的厚度朝向负载较大的一侧增加。由于该插入件是负插入件的改型，即具有与其底部垂直的一侧的插入件，其具有足够的强度。芯片也可顺利放电。

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