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    • 52. 发明授权
    • Voltage generating circuit for semiconductor memory sense amplifier
    • 半导体存储器读出放大器的电压产生电路
    • US06169698A
    • 2001-01-02
    • US09189076
    • 1998-11-09
    • Shunichi SukegawaShinji BesshoMasayuki HiraYasushi TakahashiTsutomu TakahashiKoji Arai
    • Shunichi SukegawaShinji BesshoMasayuki HiraYasushi TakahashiTsutomu TakahashiKoji Arai
    • G11C700
    • G11C5/063G11C5/143G11C5/147G11C7/06
    • Drop in the power supply level right after change can be suppressed greatly when changing the power to the internal power supply voltage from the external power supply voltage of an overdrive system. Voltage generating circuit VG0 is connected to the VDL line which raises the VDL line to a voltage higher than VDL beforehand prior to changing to internal power supply voltage VDL from external power supply voltage VDD, and restores the VDL line voltage which drops after the change to VDL. More specifically, there are detecting circuit part 40 which detects the VDL line potential, first switching element M1 connected between the VDL line and the VDD line and which operates according to the detected result of detecting circuit part 40, and second switching element M2 connected between common voltage VSS and connection node ND1 between first switching element M1 and detecting circuit part 40, which changes the potential of connection node ND1 by conducting according to input preliminary voltage step up signal MVDL, and by it conducts first switching element M1 for a fixed time.
    • 在从过驱动系统的外部电源电压改变内部电源电压的电源时,可以大幅度地抑制变更后的电源电平下降。 在从外部电源电压VDD变为内部电源电压VDL之前,将电压生成电路VG0与VDL线连接,将VDL线预先升压至高于VDL的电压,并且将变更后降低的VDL线电压恢复为 VDL。 更具体地,存在检测VDL线电位的检测电路部40,连接在VDL线与VDD线之间的第一开关元件M1,其根据检测电路部40的检测结果进行动作,第二开关元件M2连接在 第一开关元件M1和检测电路部分40之间的公共电压VSS和连接节点ND1,其通过根据输入的初步升压信号MVDL进行导通来改变连接节点ND1的电位,并且通过其将第一开关元件M1导通固定时间 。