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51. 发明授权

US06511048B1 Electron beam lithography apparatus and pattern forming method 失效
标题翻译：电子束光刻设备和图案形成方法
公开(公告)号：US06511048B1
公开(公告)日：2003-01-28
申请号：US09191383
申请日：1998-11-13
申请人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
发明人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.
摘要翻译：一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法，从而以高产率制造大规模集成电路和精细结构器件。具有较低孔径率的单元图形位于外围，并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。示例性地，在用于半导体器件制造的掩模上，用于形成线图案和栅极图案的单元图形位于中央，并且用于形成孔图案的单元图形周边地定位在每个孔组中。这允许在每个孔径组中精确地写入外围定位的图形。

52. 发明授权

US06509572B2 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06509572B2
公开(公告)日：2003-01-21
申请号：US10105284
申请日：2002-03-26
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

53. 发明授权

US06441383B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
标题翻译：用于在半导体上形成图案的带电粒子束光刻设备
公开(公告)号：US06441383B1
公开(公告)日：2002-08-27
申请号：US09814062
申请日：2001-03-22
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil masks with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
摘要翻译：为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择光圈，传送孔径被连续地用于掩模传送方向，模板掩模在与光束一起传播的同时被移动，而其它模版当指定的模板掩模孔组被曝光时，执行掩模转印。重复这些操作，以便执行所有曝光处理。

54. 发明授权

US06320198B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06320198B1
公开(公告)日：2001-11-20
申请号：US09621707
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

55. 发明授权

US5831273A Charged particle beam lithography method and apparatus thereof 失效
标题翻译：带电粒子束光刻方法及其装置
公开(公告)号：US5831273A
公开(公告)日：1998-11-03
申请号：US811927
申请日：1997-03-05
申请人： Yasuhiro Someda , Yasunari Sohda , Yoshinori Nakayama , Hiroyuki Itoh
发明人： Yasuhiro Someda , Yasunari Sohda , Yoshinori Nakayama , Hiroyuki Itoh
IPC分类号： H01J37/302 , H01J37/317 , G06F15/46
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3174
摘要： A method of adjusting a shaped beam in a charged particle beam writing method of writing a pattern on the surface of a written target using the above shaped beam is disclosed. The above method of adjusting the above shaped beam consists of a process for measuring the point of the center of the intensity of the shaped beam projected on the surface of the written target, a process for calculating a projected position correcting amount for correcting the projected position on the surface of the written target of the shaped beam based upon the measured point of the center of the intensity and a process for correcting the projected position on the surface of the written target of the shaped beam by the obtained projected position correcting amount. According to this method of correcting the projected position of the beam based upon the point of the center of the intensity of the shaped beam, a positioning error in a connection between the parts of patterns written on the surface of the written target can be greatly reduced.
摘要翻译：公开了一种使用上述成形光束在写入目标的表面上写入图案的带电粒子束写入方法中调整成形光束的方法。上述调整上述成形光束的方法由用于测量投影在被写入的目标的表面上的成形光束的强度的中心点的测量的处理，用于计算用于校正投影位置的投影位置校正量的处理基于强度中心的测量点的成形光束的写入目标的表面，以及通过所获得的投影位置校正量校正成形光束的写入目标的表面上的投影位置的处理。根据这种根据成形光束强度的中心点校正光束的投影位置的方法，可以大大减少写在写入目标表面上的图案部分之间的连接中的定位误差。

56. 发明授权

US5601686A Wafer transport method 失效
标题翻译：晶圆输送方式
公开(公告)号：US5601686A
公开(公告)日：1997-02-11
申请号：US642510
申请日：1996-05-03
申请人： Yoshio Kawamura , Yoshifumi Kawamoto , Fumihiko Uchida , Kenichi Mizuishi , Natsuki Yokoyama , Eiichi Murakami , Yoshinori Nakayama , Eiichi Seya
发明人： Yoshio Kawamura , Yoshifumi Kawamoto , Fumihiko Uchida , Kenichi Mizuishi , Natsuki Yokoyama , Eiichi Murakami , Yoshinori Nakayama , Eiichi Seya
IPC分类号： B65G49/00 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/027 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/67167 , H01L21/6719 , H01L21/67196 , H01L21/67742 , Y10S414/135 , Y10S414/139 , Y10S438/935
摘要： A wafer transport method including the steps of preparing a semiconductor process equipment having a transport chamber, a process chamber, an interface means for connecting the transport chamber to the process chamber, and a transport means for transporting a semiconductor wafer from the transport chamber to the process chamber by way of the interface means; inserting the transport means mounting a substrate in a communicating corridor including a supply means and an exhaust means; and transporting the substrate while performing the supply and exhaust by sequentially controlling a supply shutoff means, an exhaust shutoff means, and a communicating shutoff means according to the position of a conductance part formed of a gap between the transport means and the communicating corridor. With this method, the substrate is transported at a high throughput without the contamination on the substrate while keeping the different atmospheric conditions of the transport chamber and the process chamber, thereby manufacturing a semiconductor device with a high performance.
摘要翻译：一种晶片输送方法，包括以下步骤：制备具有输送室的半导体工艺设备，处理室，用于将输送室连接到处理室的接口装置，以及用于将半导体晶片从输送室输送到处理室; 将安装基板的输送装置插入包括供给装置和排气装置的通信走廊中; 并且通过根据由传送装置和通信走廊之间的间隙形成的电导部分的位置顺序地控制供给关闭装置，排气关闭装置和连通关闭装置，在执行供应和排出的同时运送基板。利用该方法，在保持输送室和处理室的不同大气条件的同时，以高通量输送基板而不会在基板上产生污染，从而制造具有高性能的半导体器件。

57. 发明授权

US5424173A Electron beam lithography system and method 失效
公开(公告)号：US5424173A
公开(公告)日：1995-06-13
申请号：US158820
申请日：1993-11-26
申请人： Hiroaki Wakabayashi , Osamu Suga , Yoshinori Nakayama , Shinji Okazaki
发明人： Hiroaki Wakabayashi , Osamu Suga , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01L21/027 , H01J37/317 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/0453 , H01J2237/31769 , H01J2237/31776 , Y10S430/143
摘要： A system and method are provided for compensating for proximity effects between selected adjacent portions of pattern elements on an integrated circuit wafer where it is determined by simulation that undesirable resist patterns will result. The subject lithography system includes projecting an electron beam onto the wafer through an aperture plate of pattern elements to obtain the desired beam pattern. An aperture mask includes a plurality of first portions corresponding to first wafer circuit element portions spaced for avoiding proximity effects on the wafer and a plurality of second portions corresponding to second element portions spaced for obtaining proximity effects between elements on the wafer. The plurality of second portions are sized to have an increased adjacent spacing relative to a resultant adjacent spacing of the corresponding second element portions whereby the resultant adjacent spacing of the second element portions on the wafer is selectively reduced by the proximity effects. Alternatively, or in addition, a wire mesh is provided at the second portions of the aperture plate to reduce the beam intensity for corresponding reduction of the proximity effects.

58. 发明授权

US5420356A Process for producing cyclobutanones 失效
标题翻译：环丁酮的制备方法
公开(公告)号：US5420356A
公开(公告)日：1995-05-30
申请号：US216847
申请日：1994-03-24
申请人： Yoshinori Nakayama
发明人： Yoshinori Nakayama
IPC分类号： C07C45/45 , C07C49/457 , C07C49/687 , C07C61/04 , C07C61/16
CPC分类号： C07C61/16 , C07C45/45 , C07C49/457 , C07C49/687 , C07C61/04
摘要： A process for producing cyclobutanones with industrial advantage is provided which comprises contacting an .alpha.-haloacetyl halide with an ethylenic unsaturated compound in the presence of a dehydrohalogenating agent and a Lewis acid.
摘要翻译：提供了一种具有工业优势的环丁酮的制备方法，其包括在脱卤化氢剂和路易斯酸的存在下使α-卤代乙酰卤与烯属不饱和化合物接触。

59. 发明授权

US5283440A Electron beam writing system used in a cell projection method 失效
标题翻译：电子束写入系统用于单元投影法
公开(公告)号：US5283440A
公开(公告)日：1994-02-01
申请号：US770527
申请日：1991-10-03
申请人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
发明人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/049 , H01J2237/1532 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
摘要翻译：电子束写入系统用于可变整形和电池投影方法以产生LSI和光罩。在单元投影方法中，光束被偏转以限定写入位置。在定义写入位置的时候，结束了形成光束的操作，其操作包括光束的偏转以选择单元图形，用于校正写入图形的原点位置的重新偏转，散光校正书面图形和焦点校正，以减少库仑效应。静电偏转器用作细胞图形选择的偏转器。图形的布置包括中心定位的方孔，其中一组单元突出孔定位成邻近正方形孔的两侧。

60. 发明授权

US4812287A Nickel-chromium stainless steel having improved corrosion resistances and machinability 失效
标题翻译：镍铬不锈钢具有改善的耐腐蚀性和可加工性
公开(公告)号：US4812287A
公开(公告)日：1989-03-14
申请号：US157265
申请日：1988-02-18
申请人： Yoshinori Nakayama , Kikuo Takizawa
发明人： Yoshinori Nakayama , Kikuo Takizawa
IPC分类号： C22C38/44 , C22C38/40
CPC分类号： C22C38/44
摘要： A nickel-chromium stainless steel having improved corrosion resistances and machinability, comprising less than 0.08 wt. % of C, less than 1.0 wt. % of Si, less than 0.7 wt. % of Mn, less than 0.04 wt. % of P, less than 0.005 wt. % of S, 8.0 to 12.0 wt. % of Ni, 17.0 to 20.0 wt. % of Cr, 0.40 to 0.80 wt. % of Mo, less than 0.3 wt. % of Cu, 0.03 to 0.5 wt. % of Sn and the balance of Fe.In another embodiment of the present invention, 0.03 to 0.1 wt. % of Bi is added to the above-described composition to further improve the machinability of the stainless steel.
摘要翻译：具有改进的耐腐蚀性和机械加工性的镍铬不锈钢包含小于0.08wt。 C％，小于1.0wt。 Si％，小于0.7wt。 Mn的％，小于0.04wt。 P％，小于0.005wt。 S％，8.0〜12.0重量％ Ni的比例为17.0〜20.0wt。％的Cr，0.40〜0.80重量％ Mo的％，小于0.3wt。％的Cu，0.03〜0.5wt。 Sn的％，余量为Fe。在本发明的另一个实施方案中，0.03至0.1wt。将Bi的％添加到上述组合物中以进一步提高不锈钢的机械加工性。

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