专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08192117B1 Method and apparatus for transporting wind turbine blades 有权
公开(公告)号：US08192117B1
公开(公告)日：2012-06-05
申请号：US13281137
申请日：2011-10-25
申请人： Scott Landrum , Eric Thompson
发明人： Scott Landrum , Eric Thompson
IPC分类号： B60P3/40
CPC分类号： B60P3/40
摘要： A rail system for transporting wind turbine blades includes both pivoting and pivoting-sliding support structures carried by a plurality of railcars. Each support structure includes a platform system having a bolster for supporting the wind turbine blade and a support plate for supporting the bolster. The pivoting and pivoting-sliding support structures allow for selective rotational and longitudinal movement of the blades relative to the railcars as the rail system negotiates straight and curved sections of railway.

52. 发明授权

US08187162B2 Reorientation port 有权
标题翻译：调整端口
公开(公告)号：US08187162B2
公开(公告)日：2012-05-29
申请号：US12043541
申请日：2008-03-06
申请人： Jonathan A. Coe , Christine Chen , Juan S. Ezolino , Kevin D. Felder , Eric Thompson
发明人： Jonathan A. Coe , Christine Chen , Juan S. Ezolino , Kevin D. Felder , Eric Thompson
IPC分类号： A61F5/37
CPC分类号： A61F5/0056 , A61F2002/30538 , A61F2220/0016 , A61F2250/0006 , A61M39/0208 , A61M39/04 , A61M2039/0223 , A61M2209/04 , A61M2210/1053
摘要： Various methods and devices are provided for reorienting an implantable port. In one embodiment, an implantable port is provided and includes a base adapted to be anchored to tissue, and a housing pivotally mounted on the base and having a septum formed therein and adapted to receive fluid and to provide access to a fluid reservoir formed within the housing. In an exemplary embodiment, the housing can be pivotally mounted to the base using a ball and socket joint. For example, at least one of a distal surface of the housing and a proximal surface of the base is convex, and the other one of the distal surface of the housing and the proximal surface of the base is concave.
摘要翻译：提供了用于重新定向可植入端口的各种方法和装置。在一个实施例中，提供可植入端口并且包括适于锚定到组织的基座，以及可枢转地安装在基座上并具有形成在其中的隔膜的壳体，其适于接收流体并提供对形成在内部的流体储存器的通路住房。在示例性实施例中，壳体可以使用球窝接头枢转地安装到基座。例如，壳体的远端表面和基部的近侧表面中的至少一个是凸形的，并且壳体的远侧表面和基部的近侧表面中的另一个是凹形的。

53. 外观设计

USD641525S1 Glove 有权
公开(公告)号：USD641525S1
公开(公告)日：2011-07-12
申请号：US29365611
申请日：2010-07-12
申请人： Sean Sweeney , Eric Thompson
设计人： Sean Sweeney , Eric Thompson

54. 发明授权

US07968929B2 On-chip decoupling capacitor structures 有权
标题翻译：片上去耦电容结构
公开(公告)号：US07968929B2
公开(公告)日：2011-06-28
申请号：US11834961
申请日：2007-08-07
申请人： Anil K. Chinthakindi , Eric Thompson
发明人： Anil K. Chinthakindi , Eric Thompson
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/945 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides on-chip decoupling capacitor structures having trench capacitors integrated with a passive capacitor formed in the back-end-of-line wiring to provide an improved overall capacitance density. In some embodiments, the structure includes at least one deep trench capacitor and a passive capacitor formed in at least two back-end-of-line wiring levels. The trench and passive capacitors are in electrical communication through one of the wiring levels. In other embodiments, the structure includes at least one deep trench capacitor, a first back-end-of-line wiring level, and a second back-end-of-line wiring level. The deep trench capacitor with a dielectric that has an upper edge that terminates at a lower surface of a shallow trench isolation region. The first wiring level is in electrical communication with the trench capacitor. The second wiring level is vertically electrically connected to the first wiring level by vertical connectors so as to form a passive capacitor.
摘要翻译：本公开提供了片上去耦电容器结构，其具有与形成在后端线路布线中的无源电容集成的沟槽电容器，以提供改进的总电容密度。在一些实施例中，该结构包括至少一个深沟槽电容器和形成在至少两个后端线路布线层中的无源电容器。沟槽和无源电容器通过其中一个布线层进行电连接。在其它实施例中，该结构包括至少一个深沟槽电容器，第一后端线路接线电平和第二后端线路布线电平。具有电介质的深沟槽电容器，其具有终止于浅沟槽隔离区域的下表面处的上边缘。第一布线电平与沟槽电容器电连通。第二布线电平通过垂直连接器垂直电连接到第一布线层，以便形成无源电容器。

55. 发明授权

US07816762B2 On-chip decoupling capacitor structures 有权
标题翻译：片上去耦电容结构
公开(公告)号：US07816762B2
公开(公告)日：2010-10-19
申请号：US11834956
申请日：2007-08-07
申请人： Anil K. Chinthakindi , Eric Thompson
发明人： Anil K. Chinthakindi , Eric Thompson
IPC分类号： H01L29/00
CPC分类号： H01L29/945 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides on-chip decoupling capacitor structures having trench capacitors integrated with planar capacitors to provide an improved overall capacitance density. In some embodiments, the structure includes at least one deep trench capacitor, at least one planar capacitor, and a metal layer interconnecting said deep trench and planar capacitors. In other embodiments, the structure includes at least one deep trench capacitor and a metal layer in electrical communication with the at least one deep trench capacitor. The at least one deep trench capacitor has a shallow trench isolation region, a doped region, an inner electrode, and a dielectric between the doped region and the inner electrode. The dielectric has an upper edge that terminates at a lower surface of the shallow trench isolation region.
摘要翻译：本公开提供具有与平面电容器集成的沟槽电容器的片上去耦电容器结构，以提供改进的总电容密度。在一些实施例中，该结构包括至少一个深沟槽电容器，至少一个平面电容器和互连所述深沟槽和平面电容器的金属层。在其他实施例中，该结构包括至少一个深沟槽电容器和与至少一个深沟槽电容器电连通的金属层。所述至少一个深沟槽电容器在所述掺杂区域和所述内部电极之间具有浅沟槽隔离区域，掺杂区域，内部电极和电介质。电介质具有终止在浅沟槽隔离区的下表面处的上边缘。

56. 发明申请

US20100155897A1 DEEP TRENCH VARACTORS 有权
公开(公告)号：US20100155897A1
公开(公告)日：2010-06-24
申请号：US12342609
申请日：2008-12-23
申请人： David S. Collins , Robert M. Rassel , Eric Thompson
发明人： David S. Collins , Robert M. Rassel , Eric Thompson
IPC分类号： H01L29/93 , H01L21/20
CPC分类号： H01L29/93 , H01L27/0805 , H01L27/0808 , H01L29/66181 , H01L29/945
摘要： A deep trench varactor structure compatible with a deep trench capacitor structure and methods of manufacturing the same are provided. A buried plate layer is formed on a second deep trench, while the first trench is protected from formation of any buried plate layer. The inside of the deep trenches is filled with a conductive material to form inner electrodes. At least one doped well is formed outside and abutting portions of the first deep trench and constitutes at least one outer varactor electrode. Multiple doped wells may be connected in parallel to provide a varactor having complex voltage dependency of capacitance. The buried plate layer and another doped well connected thereto constitute an outer electrode of a linear capacitor formed on the second deep trench.
摘要翻译：提供了与深沟槽电容器结构兼容的深沟槽变容二极管结构及其制造方法。掩埋板层形成在第二深沟槽上，同时保护第一沟槽不形成任何掩埋的板层。深沟槽的内部填充有导电材料以形成内部电极。在第一深沟槽的外部和邻接部分形成至少一个掺杂阱，并构成至少一个外变容二极管电极。多个掺杂阱可以并联连接以提供具有电容复杂电压依赖性的变容二极管。掩埋板层和与其连接的另一个掺杂阱构成形成在第二深沟槽上的线性电容器的外部电极。

57. 发明授权

US07679902B2 Vertical docking station 失效
标题翻译：垂直对接站
公开(公告)号：US07679902B2
公开(公告)日：2010-03-16
申请号：US10515907
申请日：2003-05-22
申请人： Eric Thompson
发明人： Eric Thompson
IPC分类号： G06F1/16
CPC分类号： G06F1/1632
摘要： A docking station, serving as a digital hub and cable management platform, support a laptop computer (42) in an upright position with the laptop screen (43) in a comfortable viewing position relative to the working position of the user. The laptop (42) is positioned in an upright slot (4) in the docking station, with the connection ports easily seen and accessed. The surface of the laptop slot (4) is lined with non-slip surface (3) to ease insertion and control of the laptop (42) as it is lowered into the slot (4). An adjustable front cover (15) defining the front boundary of the slot (4) covers the keyboard of the mobile computer (42) so that the user does not need to view two keyboards, and the appearance of the docked laptop (42) is clean and aesthetic. Wireless data and power transmission into the laptop (42) is provided while the laptop (42) is in the slot (4) so that the laptop (42) can be used in the docking station without a need for cable connections (45, 46) at all.
摘要翻译：用作数字集线器和电缆管理平台的对接站支持膝上型计算机（42）处于直立位置，笔记本电脑屏幕（43）相对于用户的工作位置处于舒适的观察位置。笔记本电脑（42）位于对接站中的直立槽（4）中，连接端口容易看见和访问。笔记本电脑插槽（4）的表面衬有防滑表面（3），以便当笔记本电脑（42）下降到插槽（4）中时便于插入和控制笔记本电脑。限定槽（4）的前边界的可调节前盖（15）覆盖移动计算机（42）的键盘，使得用户不需要观看两个键盘，并且对接笔记本电脑（42）的外观是清洁美观。在笔记本电脑（42）位于插槽（4）中时，提供到笔记本电脑（42）中的无线数据和电力传输，使得笔记本电脑（42）可以在对接站中使用，而不需要电缆连接（45,46 ）。

58. 发明申请

US20090039465A1 ON-CHIP DECOUPLING CAPACITOR STRUCTURES 有权
标题翻译：片上解耦电容器结构
公开(公告)号：US20090039465A1
公开(公告)日：2009-02-12
申请号：US11834961
申请日：2007-08-07
申请人： Anil K. Chinthakindi , Eric Thompson
发明人： Anil K. Chinthakindi , Eric Thompson
IPC分类号： H01L29/92
CPC分类号： H01L29/945 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides on-chip decoupling capacitor structures having trench capacitors integrated with a passive capacitor formed in the back-end-of-line wiring to provide an improved overall capacitance density. In some embodiments, the structure includes at least one deep trench capacitor and a passive capacitor formed in at least two back-end-of-line wiring levels. The trench and passive capacitors are in electrical communication through one of the wiring levels. In other embodiments, the structure includes at least one deep trench capacitor, a first back-end-of-line wiring level, and a second back-end-of-line wiring level. The deep trench capacitor with a dielectric that has an upper edge that terminates at a lower surface of a shallow trench isolation region. The first wiring level is in electrical communication with the trench capacitor. The second wiring level is vertically electrically connected to the first wiring level by vertical connectors so as to form a passive capacitor.
摘要翻译：本公开提供了片上去耦电容器结构，其具有与形成在后端线路布线中的无源电容集成的沟槽电容器，以提供改进的总电容密度。在一些实施例中，该结构包括形成在至少两个后端线路布线层中的至少一个深沟槽电容器和无源电容器。沟槽和无源电容器通过其中一个布线层进行电连接。在其它实施例中，该结构包括至少一个深沟槽电容器，第一后端线路接线电平和第二后端线路布线电平。具有电介质的深沟槽电容器，其具有终止于浅沟槽隔离区域的下表面处的上边缘。第一布线电平与沟槽电容器电连通。第二布线电平通过垂直连接器垂直电连接到第一布线层，以便形成无源电容器。

59. 发明申请

US20080186651A1 CAPACITOR HAVING ELECTRODES AT DIFFERENT DEPTHS TO REDUCE PARASITIC CAPACITANCE 失效
标题翻译：具有不同深度电极的电容器可降低PARASIIC电容
公开(公告)号：US20080186651A1
公开(公告)日：2008-08-07
申请号：US11671614
申请日：2007-02-06
申请人： Eric Thompson , Anil K. Chinthakindi
发明人： Eric Thompson , Anil K. Chinthakindi
IPC分类号： H01G4/228
CPC分类号： H01G4/33 , H01G4/228 , H01G4/306 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Capacitors are disclosed having reduced parasitic capacitance. In one embodiment, the capacitor includes a first set of electrodes, each electrode of the first set extending through at least one of a plurality of back-end-of-line (BEOL) layers above a substrate; a second set of electrodes, each electrode of the second set extending through at least one of the BEOL layers, and wherein each electrode of the second set extends to a greater depth of the plurality of BEOL layers than each electrode of the first set.
摘要翻译：公开了具有降低的寄生电容的电容器。在一个实施例中，电容器包括第一组电极，第一组的每个电极延伸穿过衬底上方的多个后端行（BEOL）层中的至少一个; 第二组电极，第二组的每个电极延伸穿过至少一个BEOL层，并且其中第二组的每个电极延伸到多个BEOL层的比第一组的每个电极更大的深度。

60. 发明申请

US20060099470A1 Passive restriction pathways in fuel cell water drainage 有权
标题翻译：燃料电池排水中的被动限制通路
公开(公告)号：US20060099470A1
公开(公告)日：2006-05-11
申请号：US10981848
申请日：2004-11-05
申请人： Pinkhas Rapaport , Eric Thompson
发明人： Pinkhas Rapaport , Eric Thompson
IPC分类号： H01M8/04 , H01M8/02
CPC分类号： H01M8/04179 , H01M8/026 , H01M8/0263 , H01M8/1018
摘要： A passive restriction passageway (for example, a passive capillary valve or a restricting orifice) positioned to drain accumulated liquid from a fuel cell reactant flow channel is used in conjunction with a control element for periodically adjusting the pressure across the passageway. The control element intermittently adjusts pressure across the passageway to enable liquid flow through the passageway. The restriction passageways and the adjustment of pressure periodically move liquid water through the passageways to drain liquid buildup from the reactant supply channels. Together, these features enable sustained performance from the fuel cell during operation and also prevent damage to the fuel cell when the fuel cell is exposed to freezing temperatures (especially after shutdown of the fuel cell).
摘要翻译：被定位为从燃料电池反应物流动通道排出积聚的液体的被动限制通道（例如，被动毛细阀或限制孔）与用于周期性地调节通过通道的压力的控制元件结合使用。控制元件间歇地调节通过通道的压力，以使液体流过通道。限制通道和压力调节周期性地将液态水通过通道排出反应物供应通道的液体积聚。一起，这些特征使得在操作期间来自燃料电池的持续性能，并且还防止当燃料电池暴露于冷冻温度（特别是在关闭燃料电池之后）对燃料电池的损坏。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式