专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明专利

JP2005002455A Plating method and plating device 有权
标题翻译：电镀方法和镀层装置
公开(公告)号：JP2005002455A
公开(公告)日：2005-01-06
申请号：JP2003169791
申请日：2003-06-13
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KANDA HIROYUKI , NAGAI MIZUKI , YAMAMOTO AKIRA , MISHIMA KOJI
IPC分类号： C25D5/02 , C25D7/12 , C25D17/00 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a plating device and a plating method by which metal plating such as copper plating can selectively be precipitated into micro-grooves and fine pores on the surface of a substrate. SOLUTION: The plating device is provided with: a plating cell 10; anode 20; an impregnation material 30 arranged at the upper part of the anode 20; a substrate contact body 60 installed in the upper part of the impregnation material 30; plating liquid feeding means (plating liquid feeding tubes 51, 53, and 55) feeding a plating liquid Q into the plating cell 10 and filling the plating liquid Q to the upper part of the impregnation material 30; a substrate holding head 70 holding a substrate W in a state where the face to be plated is made downward; and a head driving mechanism 90 driving the substrate holding head 70 and turning the face to be plated in the substrate W and the contact face with the substrate in a substrate contact body 60 into the two states of a contact one and a noncontact one. By bringing the face to be plated in the substrate W held to the substrate holding head 70 into contact with the plating liquid Q on the substrate contact body 60, the face to be plated is subjected to plating. At this time, the upper face of the substrate contact body 60 may be brought into contact with the face to be plated of the substrate W. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电镀装置和电镀方法，其中可以选择性地将诸如镀铜的金属镀层沉淀到基板表面的微细槽和细孔中。电镀装置设有：电镀单元10; 阳极20; 布置在阳极20的上部的浸渍材料30; 安装在浸渍材料30的上部的基板接触体60; 将电镀液体Q供给到电镀单元10中并将电镀液Q填充到浸渍材料30的上部的电镀液体供给装置（电镀液供给管51,53,55）将待镀面的状态向下方保持的基板保持头70; 以及头驱动机构90，其驱动基板保持头70并将基板W中的被镀覆表面和与基板的接触面在基板接触体60中转换成接触状态和非接触状态的两种状态。通过将保持在基板保持头70的基板W中的被镀层与基板接触体60上的电镀液Q接触，对被镀面进行电镀。此时，可以使基板接触体60的上表面与基板W的被镀面接触。版权所有（C）2005，JPO＆NCIPI

52. 发明专利

JP2004360027A Plating apparatus and method of keeping plating solution 有权
公开(公告)号：JP2004360027A
公开(公告)日：2004-12-24
申请号：JP2003161237
申请日：2003-06-05
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KURASHINA KEIICHI , NAMIKI KEISUKE , NAKADA TSUTOMU , MISHIMA KOJI
IPC分类号： C25D17/00 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To perform plating using an always fresh plating solution by feeding a smaller volume of a plating solution even in a face-up type plating apparatus. SOLUTION: The plating apparatus is provided with a wafer stage 516 that holds a wafer W, a sealing material 526 that abuts against the periphery of the plating surface of the wafer W to watertightly seal the periphery, a cathode part 518 equipped with a cathode 524 that comes into contact with the wafer W to allow an electric current to flow, an electrode head 508 freely and vertically movably disposed over the cathode part 518 and equipped with an anode 536 and a water-retaining porous body 538, a plating solution pour means that pours a plating solution into the gap between the anode and the plating surface of the wafer W, and an electric source 580 that applies a plating voltage between the cathode and the anode. The porous body 538 has a multilayer structure formed by laminating at least two porous materials 542, 544a, and 544b. COPYRIGHT: (C)2005,JPO&NCIPI

53. 发明专利

JP2004360026A Plating facility and plating method 有权
标题翻译：镀层设备和镀层方法
公开(公告)号：JP2004360026A
公开(公告)日：2004-12-24
申请号：JP2003161236
申请日：2003-06-05
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKADA TSUTOMU , NAMIKI KEISUKE , KURASHINA KEIICHI , MISHIMA KOJI
IPC分类号： C25D7/12 , C25D17/00 , C25D17/10 , C25D21/00 , H01L21/288 , H01L21/3205 , H01L21/768 , H05K3/18
摘要： PROBLEM TO BE SOLVED: To perform plating in a state where the whole surface of a porous body is uniformly brought into close contact with the surface of a substrate to be plated without enlarging a load. SOLUTION: The facility comprises: a substrate stage 504 for holding a substrate W; a cathode part 506 provided with a sealing material 514 for water-tightly sealing the circumferential part of the surface of the substrate to be plated and a cathode electrode 512 for energizing the substrate; an electrode head 502 provided with an anode 526 and a porous body 528 having water retainability at the upper and lower part; a plating liquid injection means 544 for injecting a plating liquid to the space between the anode and the surface of the substrate to be plated; a pressing mechanism 540 for pressing the porous body against the surface of the substrate to be plated under an optional pressure; a power source 550 for applying plating voltage between the cathode electrode and the anode; and a plating liquid exclusion mechanism for excluding the plating liquid present in the gap between the porous body and the surface of the substrate to be plated held by a substrate stage when the porous body is pressed against the surface to be plated. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在多孔体的整个表面均匀地与被镀基板的表面紧密接触的状态下进行电镀而不增加负载。解决方案：该设备包括：用于保持衬底W的衬底台504; 设置有密封材料514的阴极部分506，用于水分密封待被电镀的基板的表面的周向部分，以及用于激励基板的阴极电极512; 设置有阳极526的电极头502和在上部和下部具有保水性的多孔体528; 电镀液注入装置544，用于将电镀液体注入阳极和被镀基板的表面之间的空间; 压力机构540，用于在任意压力下将多孔体压在被镀基板的表面上; 用于在阴极电极和阳极之间施加电镀电压的电源550; 以及电镀液排除机构，用于当所述多孔体被压靠在被镀表面上时，排除存在于所述多孔体与所述被镀基板的表面之间的间隙中的电镀液体，所述镀液保持在基板台上。版权所有（C）2005，JPO＆NCIPI

54. 发明专利

JP2004353061A Electrolysis method and apparatus 审中-公开
公开(公告)号：JP2004353061A
公开(公告)日：2004-12-16
申请号：JP2003154809
申请日：2003-05-30
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MISHIMA KOJI , IDE KUNIHITO , SUZUKI HIDENAO , NOMURA KAZUFUMI , KANDA HIROYUKI
IPC分类号： C25D7/12 , C25C7/00 , C25D5/00 , C25D17/00 , C25D21/04 , C25D21/12 , C25D21/14 , H01L21/288 , H01L21/445
CPC分类号： C25D17/002 , C25D17/001 , C25D21/04 , H01L21/2885
摘要： PROBLEM TO BE SOLVED: To form a plated film having a high uniformity within the surface of a substrate and uniformly etch the film, even when the substrate has a thinned electric power-supplying layer.
SOLUTION: The electrolysis method comprises arranging a substrate W and a counter electrode plate 20 so as to face each other, filling a space between the substrate W and the counter electrode plate 20 with an electrolytic solution, supplying an electric power between them and electrolyzing the solution. The method further includes arranging a diaphragm 22 between the substrate W and the counter electrode plate 20, and supplying the electrolytic solutions Q
1 and Q
2 having different resistivities respectively to a substrate side region and a counter electrode side region, which are divided by the diaphragm 22.
COPYRIGHT: (C)2005,JPO&NCIPI

55. 发明专利

JP2004353014A Apparatus and method for plating 有权
标题翻译：装置和方法
公开(公告)号：JP2004353014A
公开(公告)日：2004-12-16
申请号：JP2003149827
申请日：2003-05-27
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MISHIMA KOJI , NAKADA TSUTOMU , KURASHINA KEIICHI , NAMIKI KEISUKE
IPC分类号： C25D7/12 , C25D17/00 , C25D21/00 , C25D21/12 , H01L21/288 , H01L21/3205 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a plating apparatus for selectively depositing a metallic plating film such as a copper layer, in grooves of wiring having a circuitry form and fine recesses such as micropores in wiring, and to provide a plating method therefor. SOLUTION: The plating apparatus comprises a substrate stage 504 for holding a substrate W: a cathode part 506 provided with a sealant 514 for abutting and sealing the perimeter around the surface to be plated of the substrate held by a substrate stage, and a cathode 512 for electrifying the substrate while contacting with it: and an electrode head 502 which is arranged above the cathode part so as to freely move up and down, and is provided with an anode 526 and a porous body 528 having water retentivity in the upper and lower parts: a plating liquid injection means 556 for injecting a plating liquid between the anode and the surface to be plated of the substrate held by the substrate stage: pressing estrangement mechanism 540, 542 and 546 for pressing the porous body to the surface to be plated of substrate W held by the substrate stage with an arbitrary pressure, and thereby estranging the porous body from the surface to be plated: and a power source 560 for applying electric voltage for plating in between the cathode and the anode. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于选择性地沉积诸如铜层的金属镀膜的电镀装置，在具有电路形式的布线的凹槽中以及布线中的微孔等精细凹槽，并提供其电镀方法。电镀装置包括用于保持基板W的基板台504：设置有密封剂514的阴极部分506，用于邻接和密封围绕由基板台保持的基板待镀表面的周边;以及阴极512，用于在与基板接触的同时使基板通电;以及电极头502，其设置在阴极部分上方以便上下自由移动，并且设置有阳极526和具有保持性的多孔体528 上部和下部：用于在阳极和被基底台保持的基底的待镀表面之间注入电镀液的电镀液注入装置556：用于将多孔体挤压到表面的挤压异化机构540,542和546 由任意压力对由基板台保持的基板W进行镀覆，从而使多孔体从被镀表面脱离，以及用于施加电压的电源560 在阴极和阳极之间电镀的年龄。版权所有（C）2005，JPO＆NCIPI

56. 发明专利

JP2004307898A Acidic copper plating liquid and plating method using the same 有权
公开(公告)号：JP2004307898A
公开(公告)日：2004-11-04
申请号：JP2003100374
申请日：2003-04-03
申请人： Ebara Corp , Ebara Udylite Kk , 株式会社荏原製作所 , 荏原ユージライト株式会社
发明人： SAHODA TAKESHI , NAKADA TSUTOMU , MISHIMA KOJI , KIMIZUKA RYOICHI , KOBAYASHI TAKESHI
IPC分类号： C25D3/38 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide an acidic copper plating liquid with which the interior of the gaps of a surface to be plated of a wafer and the like having the gaps of submicron level can be completely embedded with copper plating and copper plating treatment of high uniformity can be performed, and to provide an electroplating method using the same.
SOLUTION: The acidic copper plating liquid contains copper ions, an organic acid or inorganic acid, chlorine ions, a polymeric surfactant for suppressing an electrodeposition reaction, and a sulfur-based saturated organic compound for accelerating an electrodeposition rate. In the liquid, at least two or more varying in hydrophobicity are used as the polymeric surfactant. The electrolytic plating method comprises performing plating treatment at cathode current density of 0.1 to 30 mA/cm
2 by using the copper plating liquid.
COPYRIGHT: (C)2005,JPO&NCIPI

57. 发明专利

JP2004218080A Plating method 审中-公开
公开(公告)号：JP2004218080A
公开(公告)日：2004-08-05
申请号：JP2003423419
申请日：2003-12-19
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAGAI MIZUKI , MISHIMA KOJI , KANDA HIROYUKI
IPC分类号： C25D7/12 , C25D21/12 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a plating method with which even in the case of a recessed part having high aspect ratio, an embedded wiring composed of a sound conductive material having no defect in this recessed part can be formed and further, even in the case of intermingling fine holes and large hole on the surface of a substrate, the flatness of the plated film is improved and CMP working thereafter can be applied in a short period of time while preventing the occurrence of dishing.
SOLUTION: A high resistance structure is arranged between the surface of the substrate connected with a cathode electrode and an anode electrode and while impressing a fixed voltage between the anode electrode and the cathode electrode, the interval between the substrate and the anode electrode, is filled up with the plating solution, and while controlling the current flowing between the cathode electrode and the anode electrode to the constant, the plated film is grown on the surface of the substrate.
COPYRIGHT: (C)2004,JPO&NCIPI

58. 发明专利

JP2003321792A Copper plating bath and method for forming fine circuit wiring using this plating bath, and apparatus used for the same 审中-公开
标题翻译：铜镀层和使用这种镀层的微细电线接线方法及其设备
公开(公告)号：JP2003321792A
公开(公告)日：2003-11-14
申请号：JP2002125501
申请日：2002-04-26
申请人： Ebara Corp , Kiminori Hayase , 仁則早瀬 , 株式会社荏原製作所
发明人： HAYAFUSA KEISUKE , YAKUWA HIROSHI , YOKOTA HIROSHI , MISHIMA KOJI , HAYASE KIMINORI , HATSUZAWA TAKESHI
IPC分类号： C25D3/38 , C25D7/12 , H01L21/288 , H01L21/3205 , H01L23/52 , H05K3/18
摘要： PROBLEM TO BE SOLVED: To provide a copper plating bath which can form fine circuit wiring having high electrical reliability without formation of humps on the wiring to a substrate for electronic circuits, such as a semiconductor wafer or printed wiring board, formed with fine circuit patterns by fine trenches or holes, a method for forming the fine circuit wiring using this plating bath, and apparatus used for the same.
SOLUTION: The copper plating bath comprising containing the following components (a) to (d); (a) copper ions, (b) an acid component, (c) 0.1 to 10 mg/l halogen ions, and (d) a polymer component and substantially not containing a sulfur-containing unsaturated organic compound, the method for forming the fine circuit wiring using this plating bath, and the apparatus used for the same are provided.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种可以形成具有高电可靠性的精细电路布线的铜电镀液，而不在与用于电子电路的基板（例如半导体晶片或印刷线路板）的布线上形成凸起，形成有通过精细沟槽或孔的精细电路图案，使用该电镀浴形成精细电路布线的方法以及用于其的装置。包括含有以下组分（a）至（d）的铜电镀浴; （a）铜离子，（b）酸成分，（c）0.1〜10mg / l卤素离子，（d）聚合物成分，基本上不含有含硫不饱和有机化合物，提供使用该电镀槽的电路布线及其使用的装置。版权所有（C）2004，JPO

59. 发明专利

JP2003297886A Recess and projection measuring method, recess and projection measuring device and substrate treatment device for semiconductor substrate 有权
标题翻译：记录和投影测量方法，用于半导体基板的记录和投影测量装置和基板处理装置
公开(公告)号：JP2003297886A
公开(公告)日：2003-10-17
申请号：JP2002096438
申请日：2002-03-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TADA MITSUO , SUDO YASUNARI , MISHIMA KOJI , INOUE HIROAKI , O CHIKAAKI
IPC分类号： G01B21/30 , G01Q60/10 , G01Q60/18 , G01Q60/24 , H01L21/66 , G01N13/12 , G01N13/14
摘要： PROBLEM TO BE SOLVED: To provide a recess and projection measuring method, a recess and projection measuring device and a substrate treatment device for a semiconductor substrate capable of easily and highly accurately measuring the fine recess and projection of the surface without destroying the semiconductor substrate during manufacture. SOLUTION: The recess and projection measuring device 10-1 measures the recess and projection of the surface of the semiconductor substrate W having an embedded wiring structure. By bringing a probe 21 closer in a state of not contacting the surface of the semiconductor substrate W and measuring a physical change amount obtained by changing a separation distance between the probe 21 brought closer and the surface of the semiconductor substrate W, the recess and projection of the surface of the substrate W are measured. A measuring means is the one that measures the change of interatomic force generated between the probe 21 and the surface of the semiconductor substrate W, or measures the change of a tunnel current made to flow between the probe 21 and the surface of the semiconductor substrate W, or measures the change of the scattering state of light which passes through between the probe 21 and the surface of the semiconductor substrate W. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供一种凹凸投影测量方法，一种用于半导体衬底的凹入和投影测量装置和基板处理装置，其能够容易且高精度地测量表面的细小凹陷和突起而不破坏半导体衬底。解决方案：凹凸投影测量装置10-1测量具有嵌入式布线结构的半导体衬底W的表面的凹凸。通过在不接触半导体基板W的表面的状态下使探头21更接近，并测量通过改变靠近的探针21与半导体基板W的表面之间的分离距离而获得的物理变化量，测量衬底W的表面。测量装置是测量在探针21和半导体衬底W的表面之间产生的原子间力的变化的测量装置，或者测量在探针21和半导体衬底W的表面之间流动的隧道电流的变化，或者测量通过探针21和半导体衬底W的表面之间的光的散射状态的变化。版权所有（C）2004，JPO

60. 发明申请

WO0010200A8 WAFER PLATING METHOD AND APPARATUS 审中-公开
标题翻译：抛光方法和装置
公开(公告)号：WO0010200A8
公开(公告)日：2000-04-27
申请号：PCT/JP9904349
申请日：1999-08-11
申请人： EBARA CORP , HONGO AKIHISA , OGURE NAOAKI , INOUE HIROAKI , SENDAI SATOSHI , IKEGAMI TETSUMA , MISHIMA KOJI , OKUYAMA SHUICHI , NAGAI MIZUKI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
发明人： HONGO AKIHISA , OGURE NAOAKI , INOUE HIROAKI , SENDAI SATOSHI , IKEGAMI TETSUMA , MISHIMA KOJI , OKUYAMA SHUICHI , NAGAI MIZUKI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
IPC分类号： C23C18/16 , C23C18/38 , C25D3/38 , C25D7/12 , H01L21/288 , H01L21/768 , H05K3/10 , H05K3/24 , H05K3/42 , H01L21/3205
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method for plating through a simple manufacturing process a semiconductor wafer (W) so as to efficiently fill a fine recess (42) for interconnection made in the wafer (W) with a plating metal (43) having little voids and immune to contamination and to create an interconnection, comprising an electroless plating step of forming an initial film (41) on the wafer (W) and an electroplating step of filling the recess by electroplating using the initial film as the electricity feeding layer. An apparatus for plating a semiconductor wafer by such a method is also disclosed.
摘要翻译：一种通过简单的制造工艺对半导体晶片（W）进行电镀的方法，以便有效地填充用晶片（W）制成的互连用的微细凹槽（42），其中电镀金属（43）具有很小的空隙并且不受污染，并且以形成互连，包括在晶片（W）上形成初始膜（41）的无电电镀步骤以及使用初始膜作为馈电层通过电镀填充凹部的电镀步骤。还公开了一种通过这种方法电镀半导体晶片的装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式