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    • 1. 发明专利
    • Substrate polishing device, and substrate polishing method
    • 基板抛光装置和基板抛光方法
    • JP2007331108A
    • 2007-12-27
    • JP2007213550
    • 2007-08-20
    • Ebara Corp株式会社荏原製作所
    • TOGAWA TETSUJIFUKAYA KOICHITADA MITSUOTAKAHASHI TAROSUDO YASUNARI
    • B24B37/013B24B37/30B24B49/02B24B49/08B24B49/10H01L21/304
    • PROBLEM TO BE SOLVED: To provide a substrate polishing device, and a substrate polishing method, capable of polishing a substrate for a semiconductor wafer or the like to be flat with high precision. SOLUTION: The substrate polishing device is provided with a polishing table 100 comprising a polishing surface, a substrate holding device 1 to hold a substrate W to be polished, and press it to the polishing surface of the polishing table, and a film thickness measuring device 200 to measure the thickness of film formed on the substrate. The substrate holding device comprises an adjusting means which parts the substrate to be pressed to the polishing surface of the polishing table in a plurality of sections, and adjust pressure to press it to the polishing surface for each section, so that the pressure added to each section of the substrate on the substrate holding device is adjusted based on measurement information of thickness of the film on the substrate by the film thickness measuring device. The film thickness measuring device measures the film thickness in each section of the substrate, and pressure added to each section of the substrate on the substrate holding device is adjusted based on film thickness measurement information from each section. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供能够以高精度将半导体晶片等的基板研磨成平坦的基板研磨装置和基板研磨方法。 < P>解决方案:基板抛光装置设置有包括抛光表面的抛光台100,用于保持要抛光的基板W的基板保持装置1,并将其按压到抛光台的抛光表面, 厚度测量装置200,以测量在基板上形成的膜的厚度。 基板保持装置包括调整装置,其将多个部分中的待加压基板分配到抛光台的抛光表面,并调节压力以将其按压到每个部分的抛光表面,使得加到每个部分上的压力 基于膜厚测量装置,基于基板上的膜的厚度的测量信息来调整基板保持装置上的基板的截面。 膜厚测量装置测量基板的每个部分中的膜厚度,并且基于来自每个部分的膜厚测量信息来调整添加到基板保持装置上的基板的每个部分的压力。 版权所有(C)2008,JPO&INPIT
    • 3. 发明专利
    • Device and method for substrate polishing
    • 基板抛光的装置和方法
    • JP2007243221A
    • 2007-09-20
    • JP2007131215
    • 2007-05-17
    • Ebara Corp株式会社荏原製作所
    • TOGAWA TETSUJIFUKAYA KOICHITADA MITSUOTAKAHASHI TAROSUDO YASUNARI
    • H01L21/304B24B37/005B24B37/013B24B37/04B24B37/30
    • PROBLEM TO BE SOLVED: To provide a substrate polishing device and a substrate polishing method which highly accurately conducts polishing to flatten a substrate such as a semiconductor wafer or the like. SOLUTION: The substrate polishing device includes: a polishing table having a polishing surface; a substrate retaining device for retaining the substrate to be polished and pushing the same against the polishing surface of the polishing table; and a film thickness measuring device for measuring the thickness of a film formed on the substrate. The substrate retaining device has a regulating means for dividing the substrate contacted in a sliding action with the polishing surface of the polishing table into many regions to regulate a pushing force for pushing the substrate against the polishing surface in each region. The pushing force applied on each region of the substrate on the substrate retaining device is regulated based on the measuring information on the thickness of the film on the substrate, which is measured by the film thickness measuring device. The film thickness measuring device measures the film thickness in each region on the substrate, and the pushing force applied on each region of the substrate on the substrate retaining device is regulated based on the measuring information on the film thickness in each region. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供高精度地进行抛光以平坦化诸如半导体晶片等的基板的基板研磨装置和基板研磨方法。 所述基板研磨装置具备:具有研磨面的研磨台; 用于保持要抛光的基板并将其推向抛光台的抛光表面的基板保持装置; 以及用于测量在基板上形成的膜的厚度的膜厚测量装置。 基板保持装置具有调节装置,用于将与滑动动作接触的基板与抛光台的抛光表面分成多个区域,以调节用于将基板推向每个区域中的抛光表面的推力。 基于由膜厚测量装置测量的基板上膜厚度的测量信息来调节施加在基板保持装置上的基板的每个区域上的推力。 膜厚测量装置测量基板上每个区域中的膜厚度,并且基于每个区域中的膜厚度的测量信息来调节施加在基板保持装置上的基板的每个区域上的推力。 版权所有(C)2007,JPO&INPIT
    • 4. 发明专利
    • Eddy current sensor
    • EDDY电流传感器
    • JP2005121616A
    • 2005-05-12
    • JP2003359938
    • 2003-10-20
    • Ebara Corp株式会社荏原製作所
    • TADA MITSUOSUDO YASUNARI
    • G01B7/06G01B7/00H01L21/304
    • G01B7/105
    • PROBLEM TO BE SOLVED: To provide an eddy current sensor, capable of simply and quickly performing measurement of film thickness for a conductive film, without receiving influence of a measurement environment. SOLUTION: The eddy current sensor comprises a sensor coil, arranged in the vicinity of a conductive film or a substrate where the conductive film is to be formed, a signal source forming an eddy current by supplying an ac current to the sensor coil, and a detection circuit for detecting the eddy current formed by the conductive film by the sensor coil; wherein the sensor coil is accommodated in an accommodation member so that a high magnetic permeability material is formed into a cylinder shape, and the accommodation member constitutes magnetic flux path which is effective for producing the eddy current in the conductive film by the sensor coil. Also, the resistance component and the reactance component of impedance are displayed on the axes of rectangular coordinates, and the film thickness of the conductive film is detected from an angle, formed by a straight line connecting the coordinates of the impedance and the coordinates of a specified center point. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种涡流传感器,其能够简单且快速地对导电膜的膜厚进行测量,而不受测量环境的影响。 解决方案:涡电流传感器包括传感器线圈,布置在导电膜附近或要形成导电膜的基板附近,信号源通过向传感器线圈提供交流电流而形成涡流 以及检测电路,用于检测由传感器线圈由导电膜形成的涡流; 其中传感器线圈容纳在容纳部件中,使得高磁导率材料形成为圆筒形,并且容纳部件构成有效地通过传感器线圈产生导电膜中的涡流的磁通路径。 此外,电阻分量和阻抗的电抗分量显示在直角坐标轴上,并且从由连接阻抗坐标和坐标的直线形成的角度检测导电膜的膜厚度 指定中心点。 版权所有(C)2005,JPO&NCIPI
    • 5. 发明专利
    • Method for detecting film thickness of conductive film
    • 检测导电膜厚度的方法
    • JP2004301857A
    • 2004-10-28
    • JP2004194530
    • 2004-06-30
    • Ebara Corp株式会社荏原製作所
    • TADA MITSUOYAMAZAKI HIRONOBUSUDO YASUNARI
    • G01B7/06G01B7/00
    • PROBLEM TO BE SOLVED: To provide a method for detecting the film thickness of a conductive film which can accurately detect the film thickness, etc. from an extremely thin conductive film to a relatively thick conductive film to be formed on a semiconductor substrate.
      SOLUTION: A sensor coil 2 is disposed near the semiconductor substrate W having the conductive film 1. The sensor coil 2 is formed by connecting a variable resistor 16 to a series circuit in which a detecting coil 13 and a balance coil 14 are connected so that the phases of the detecting coil 13 and the balance coil 14 become opposite phase to each other and can be regulated so that when the conductive film 1 to be detected does not exist, the output of the series circuit becomes zero. An AC current of a predetermined frequency is supplied to the sensor coil 2 to form an eddy current in the conductive film 1 on the semiconductor substrate W, an impedance including the conductive film 1 as viewed from both ends of the sensor coil 2 is measured. Then, a resistance component, a reactance component, the phase and the amplitude are separated from the impedance, and are output. Thus, the film thickness of the conductive film 1 is detected.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种用于检测可以从极薄的导电膜到要形成在半导体衬底上的相对厚的导电膜来精确地检测膜厚度的导电膜的膜厚检测方法 。 解决方案:传感器线圈2设置在具有导电膜1的半导体衬底W附近。传感器线圈2通过将可变电阻器16连接到串联电路而形成,其中检测线圈13和平衡线圈14是 连接使得检测线圈13和平衡线圈14的相位彼此相反,并且可以调节,使得当不存在要检测的导电膜1时,串联电路的输出变为零。 将预定频率的AC电流提供给传感器线圈2,以在半导体衬底W上的导电膜1中形成涡电流,测量从传感器线圈2的两端观察的包括导电膜1的阻抗。 然后,将电阻分量,电抗分量,相位和幅度与阻抗分离,并输出。 因此,检测导电膜1的膜厚度。 版权所有(C)2005,JPO&NCIPI
    • 6. 发明专利
    • Recess and projection measuring method, recess and projection measuring device and substrate treatment device for semiconductor substrate
    • 记录和投影测量方法,用于半导体基板的记录和投影测量装置和基板处理装置
    • JP2003297886A
    • 2003-10-17
    • JP2002096438
    • 2002-03-29
    • Ebara Corp株式会社荏原製作所
    • TADA MITSUOSUDO YASUNARIMISHIMA KOJIINOUE HIROAKIO CHIKAAKI
    • G01B21/30G01Q60/10G01Q60/18G01Q60/24H01L21/66G01N13/12G01N13/14
    • PROBLEM TO BE SOLVED: To provide a recess and projection measuring method, a recess and projection measuring device and a substrate treatment device for a semiconductor substrate capable of easily and highly accurately measuring the fine recess and projection of the surface without destroying the semiconductor substrate during manufacture. SOLUTION: The recess and projection measuring device 10-1 measures the recess and projection of the surface of the semiconductor substrate W having an embedded wiring structure. By bringing a probe 21 closer in a state of not contacting the surface of the semiconductor substrate W and measuring a physical change amount obtained by changing a separation distance between the probe 21 brought closer and the surface of the semiconductor substrate W, the recess and projection of the surface of the substrate W are measured. A measuring means is the one that measures the change of interatomic force generated between the probe 21 and the surface of the semiconductor substrate W, or measures the change of a tunnel current made to flow between the probe 21 and the surface of the semiconductor substrate W, or measures the change of the scattering state of light which passes through between the probe 21 and the surface of the semiconductor substrate W. COPYRIGHT: (C)2004,JPO
    • 要解决的问题:为了提供一种凹凸投影测量方法,一种用于半导体衬底的凹入和投影测量装置和基板处理装置,其能够容易且高精度地测量表面的细小凹陷和突起而不破坏 半导体衬底。 解决方案:凹凸投影测量装置10-1测量具有嵌入式布线结构的半导体衬底W的表面的凹凸。 通过在不接触半导体基板W的表面的状态下使探头21更接近,并测量通过改变靠近的探针21与半导体基板W的表面之间的分离距离而获得的物理变化量, 测量衬底W的表面。 测量装置是测量在探针21和半导体衬底W的表面之间产生的原子间力的变化的测量装置,或者测量在探针21和半导体衬底W的表面之间流动的隧道电流的变化 ,或者测量通过探针21和半导体衬底W的表面之间的光的散射状态的变化。版权所有(C)2004,JPO
    • 7. 发明专利
    • Method of polishing
    • 抛光方法
    • JP2007318169A
    • 2007-12-06
    • JP2007202747
    • 2007-08-03
    • Ebara Corp株式会社荏原製作所
    • TADA MITSUOYAMAZAKI HIRONOBUSUDO YASUNARI
    • H01L21/304G01B7/06
    • PROBLEM TO BE SOLVED: To provide a method of polishing a conductive film while precisely detecting a film thickness of from an extremely thin to a thicker conductive film formed on a semiconductor substrate.
      SOLUTION: By measuring an impedance of a reference wafer by an eddy current sensor 10, a relation among the impedance of the eddy current sensor 10, a frequency of an alternating current to be provided with a sensor coil, and a film thickness is calibrated. The eddy current sensor 10 supplies the sensor coil with the alternating current having a constant frequency to form the eddy current in a conductive film on a polish object, to measure the impedance including the conductive film seen from both terminals of the sensor coil, and to detect a change of the film thickness of the conductive film from the change of the impedance including the conductive film on the polish object.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种在精确地检测从非常薄的膜厚到形成在半导体衬底上的较厚的导电膜的膜厚度的同时抛光导电膜的方法。 解决方案:通过涡电流传感器10测量参考晶片的阻抗,涡电流传感器10的阻抗,提供传感器线圈的交流电流的频率与膜厚度之间的关系 被校准。 涡流传感器10向传感器线圈供给具有恒定频率的交流电,以在抛光物体上的导电膜中形成涡电流,以测量包括从传感器线圈的两个端子看到的导电膜的阻抗,以及 从抛光物体上的导电膜的阻抗的变化来检测导电膜的膜厚变化。 版权所有(C)2008,JPO&INPIT
    • 8. 发明专利
    • Eddy current sensor
    • EDDY电流传感器
    • JP2007263981A
    • 2007-10-11
    • JP2007182512
    • 2007-07-11
    • Ebara Corp株式会社荏原製作所
    • TADA MITSUOSUDO YASUNARI
    • G01B7/06
    • PROBLEM TO BE SOLVED: To provide an eddy current sensor, capable of simply and quickly performing measurement of film thickness for a conductive film, without receiving the influence of a measured environment. SOLUTION: The eddy current sensor comprises a sensor coil disposed in the vicinity of a conductive film or a substrate where the conductive film is to be formed; a signal source forming an eddy current by supplying an AC current to the sensor coil; and a detection circuit for detecting the eddy current, formed by the conductive film by the sensor coil as an impedance, as seen from the sensor coil, wherein the resistance component and the reactance component of the impedance are displayed, on the axes of rectangular coordinates, and the film thickness of the conductive film is detected from an angle, formed by a straight line connecting the coordinates of the impedance and the coordinates of a specified center point. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种涡流传感器,其能够简单且快速地对导电膜的膜厚进行测量,而不会受到测量环境的影响。 解决方案:涡电流传感器包括设置在要形成导电膜的导电膜或基板附近的传感器线圈; 信号源,通过向传感器线圈提供AC电流而形成涡流; 以及检测电路,用于通过传感器线圈由导电膜形成的涡电流作为阻抗,如从传感器线圈所见,其中电阻分量和阻抗的电抗分量显示在直角坐标轴上 并且从由连接阻抗的坐标和指定中心点的坐标的直线形成的角度检测导电膜的膜厚度。 版权所有(C)2008,JPO&INPIT
    • 9. 发明专利
    • Device and method for substrate polishing
    • 基板抛光的装置和方法
    • JP2005011977A
    • 2005-01-13
    • JP2003174144
    • 2003-06-18
    • Ebara Corp株式会社荏原製作所
    • TOGAWA TETSUJIFUKAYA KOICHITADA MITSUOTAKAHASHI TAROSUDO YASUNARI
    • B24B37/005B24B37/013B24B37/30B24B37/32B24B49/10B24B49/12B24B49/16H01L21/304B24B37/00B24B37/04
    • B24B37/013B24B49/105B24B49/12B24B49/16
    • PROBLEM TO BE SOLVED: To provide a substrate polishing device and a substrate polishing method which highly accurately polishes a substrate such as a semiconductor wafer or the like to flatten the same. SOLUTION: The substrate polishing device is provided with a polishing table having a polishing surface, a substrate retaining device for retaining the substrate or the object of polishing and pushing the same against the polishing surface of the polishing table, and a film thickness measuring device for measuring the thickness of a film formed on the substrate. The substrate retaining device is provided with a regulating means for dividing the substrate contacted slidingly with the polishing surface of the polishing table, into a plurality of regions to regulate a pushing force for pushing the substrate against the polishing surface in each regions. The pushing force applied on each regions of the substrate on the substrate retaining device is regulated based on the measuring information on the thickness of the film on the substrate, which is measured by the film thickness measuring device. In this case, the film thickness measuring device measures the film thickness in respective regions, and the pushing force applied on each regions of the substrate on the substrate retaining device is regulated based on the measuring information of the film thickness in each regions. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种对诸如半导体晶片等的基板进行高精度抛光以使其平坦化的基板研磨装置和基板研磨方法。 < P>解决方案:基板研磨装置设置有具有抛光面的研磨台,保持基板或抛光对象物的基板保持装置,并将其推压在研磨台的研磨面上,膜厚度 用于测量在基板上形成的膜的厚度的测量装置。 基板保持装置设置有用于将与抛光台的抛光表面滑动接触的基板分割成多个区域的调节装置,以调节用于将基板推向每个区域中的抛光表面的推力。 基于由膜厚测量装置测量的基板上的膜的厚度的测量信息来调节施加在基板保持装置的基板的每个区域上的推力。 在这种情况下,膜厚测量装置测量各个区域中的膜厚度,并且基于每个区域中的膜厚度的测量信息来调节施加在基板保持装置上的基板的每个区域上的推力。 版权所有(C)2005,JPO&NCIPI