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51. 发明授权

US08119513B1 Method for making cadmium sulfide layer 有权
标题翻译：制备硫化镉层的方法
公开(公告)号：US08119513B1
公开(公告)日：2012-02-21
申请号：US12951108
申请日：2010-11-22
申请人： Bastiaan Arie Korevaar , Scott Feldman-Peabody , Robert Dwayne Gossman
发明人： Bastiaan Arie Korevaar , Scott Feldman-Peabody , Robert Dwayne Gossman
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L31/0296 , H01L31/03923 , H01L31/03925 , H01L31/073 , H01L31/0749 , H01L31/1836 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A method for making a cadmium sulfide layer is provided. The method includes a number of steps including providing a substrate and disposing a layer containing cadmium on the substrate followed by sulfurization of the cadmium-containing layer.
摘要翻译：提供了制备硫化镉层的方法。该方法包括多个步骤，包括提供衬底并在衬底上放置含有镉的层，随后含镉层硫化。

52. 发明申请

US20110315220A1 PHOTOVOLTAIC CELL AND METHODS FOR FORMING A BACK CONTACT FOR A PHOTOVOLTAIC CELL 审中-公开
标题翻译：用于形成光伏电池背部接触的光电池和方法
公开(公告)号：US20110315220A1
公开(公告)日：2011-12-29
申请号：US12826234
申请日：2010-06-29
申请人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Faisal Razi Ahmad , David William Vernooy
发明人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Faisal Razi Ahmad , David William Vernooy
IPC分类号： H01L31/0376 , H01L31/18 , H01L31/0256
CPC分类号： H01L31/073 , H01L31/022425 , H01L31/02963 , H01L31/03925 , H01L31/1836 , Y02E10/543
摘要： Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material. An interlayer is disposed between the back contact material and the absorber layer and comprises a compositionally graded layer of the back contact material and the absorber layer material. The photovoltaic cell further includes a window layer disposed above the absorber layer.
摘要翻译：提供了用于形成包括至少一个半导体层的光伏电池的背接触的方法。一种方法包括在金属接触件上沉积至少一个背接触材料。背面接触材料包括金属氮化物或金属磷化物。该方法还包括在背接触材料上沉积包括镉和碲的吸收层，并对后接触材料进行热处理，使得背接触材料与吸收层相互作用以形成降低光伏电池的接触电阻的中间层。还提供了一种光伏电池，其包括金属接触件，设置在金属接触件上的至少一个背接触材料以及包含设置在背面接触材料上方的包含镉和碲的材料的吸收层。中间层设置在背接触材料和吸收层之间，并且包括背接触材料和吸收层材料的组成梯度层。光伏电池还包括设置在吸收层上方的窗口层。

53. 发明申请

US20110265865A1 PHOTOVOLTAIC CELLS WITH CADMIUM TELLURIDE INTRINSIC LAYER 审中-公开
标题翻译：具有碲化钽内层的光电池
公开(公告)号：US20110265865A1
公开(公告)日：2011-11-03
申请号：US12768929
申请日：2010-04-28
申请人： Bastiaan Arie Korevaar
发明人： Bastiaan Arie Korevaar
IPC分类号： H01L31/0352 , H01L31/0368 , H01L31/0376 , H01L31/0296
CPC分类号： H01L31/075 , H01L31/022425 , H01L31/0368 , H01L31/056 , H01L31/073 , H01L31/1828 , Y02E10/52 , Y02E10/543 , Y02E10/548
摘要： A photovoltaic (PV) cell includes a first electrically conductive layer, a p-type semiconductor layer, and a substantially intrinsic semiconductor layer with a median grain size of at least about five (5) μm and comprising a cadmium and tellurium. The PV cell further includes an n-type semiconductor layer and a second electrically conductive layer. The substantially intrinsic semiconductor layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A photovoltaic cell that includes a first electrically conductive layer comprising a textured substrate and a substantially intrinsic semiconductor layer, with a median grain size of at least about five (5) μm and comprising cadmium and tellurium, is also provided.
摘要翻译：光伏（PV）电池包括第一导电层，p型半导体层和具有至少约五（5）μm的中值晶粒尺寸并包含镉和碲的基本上本征的半导体层。 PV电池还包括n型半导体层和第二导电层。实质上本征半导体层设置在p型半导体层和n型半导体层之间。还提供了包括第一导电层的光伏电池，其包含纹理化衬底和基本上本征的半导体层，其平均晶粒尺寸为至少约五（5μm）并包括镉和碲。

54. 发明授权

US07994418B2 Monolithically connected photovoltaic devices on flexible substrates 有权
标题翻译：柔性基板上的单片光伏器件
公开(公告)号：US07994418B2
公开(公告)日：2011-08-09
申请号：US12284132
申请日：2008-09-18
申请人： Sheila Neumann Tandon , Bastiaan Arie Korevaar , Svetlana Rogojevic
发明人： Sheila Neumann Tandon , Bastiaan Arie Korevaar , Svetlana Rogojevic
IPC分类号： H01L31/05
CPC分类号： H01L31/0392 , H01L31/022425 , H01L31/03925 , H01L31/03928 , H01L31/046 , H01L31/0465 , Y02E10/541
摘要： A method of monolithically interconnecting electrical devices that isolates and interconnects the contacts of neighboring electrical devices such as thin film PV cells, without damaging the surrounding materials.
摘要翻译：一种单片互连电气装置的方法，其隔离和互连相邻电气装置（例如薄膜PV电池）的触点，而不损坏周围的材料。

55. 发明申请

US20100108132A1 NANO-DEVICES AND METHODS OF MANUFACTURE THEREOF 审中-公开
标题翻译：纳米器件及其制造方法
公开(公告)号：US20100108132A1
公开(公告)日：2010-05-06
申请号：US12261171
申请日：2008-10-30
申请人： Loucas Tsakalakos , Bastiaan Arie Korevaar , Joleyn Eileen Balch , Jody Fronheiser , Bo Li , Anis Zribi
发明人： Loucas Tsakalakos , Bastiaan Arie Korevaar , Joleyn Eileen Balch , Jody Fronheiser , Bo Li , Anis Zribi
IPC分类号： H01L31/0352 , H01L21/20 , H01L29/06
CPC分类号： H01L21/02381 , B81B1/00 , B81B2201/0214 , B81B2201/0292 , B82Y10/00 , B82Y15/00 , B82Y30/00 , H01L21/02521 , H01L21/02532 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L31/035227 , H01L31/03529
摘要： Disclosed herein is a nanodevice. Disclosed herein too is a method of manufacturing a nanodevice. In one embodiment the nanodevice includes a first substrate; a second substrate; a nanowire; the nanowire contacting the first substrate and the second substrate; the nanowire comprising a metal, a semi-conductor or a combination thereof.
摘要翻译：本文公开了一种纳米器件。这里也公开了一种制造纳米器件的方法。在一个实施例中，纳米器件包括第一衬底; 第二基板; 纳米线所述纳米线与所述第一基板和所述第二基板接触; 纳米线包括金属，半导体或其组合。

56. 发明申请

US20080169019A1 Nanowall Solar Cells and Optoelectronic Devices 有权
标题翻译： Nanowall太阳能电池和光电器件
公开(公告)号：US20080169019A1
公开(公告)日：2008-07-17
申请号：US11622295
申请日：2007-01-11
申请人： Bastiaan Arie Korevaar , Loucas Tsakalakos , Joleyn Balch
发明人： Bastiaan Arie Korevaar , Loucas Tsakalakos , Joleyn Balch
IPC分类号： H01L31/042 , B05D5/12
CPC分类号： H01L31/03529 , H01L31/022425 , H01L31/035281 , H01L31/068 , H01L31/0687 , H01L31/0693 , H01L31/072 , H01L31/0725 , H01L31/073 , H01L31/0735 , H01L31/0749 , H01L31/075 , H01L31/076 , H01L31/077 , Y02E10/541 , Y02E10/542 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521 , Y10S977/712 , Y10S977/72 , Y10S977/762 , Y10S977/948 , Y10S977/954
摘要： A photovoltaic device that includes a substrate and a nanowall structure disposed on the substrate surface. The device also includes at least one layer conformally deposited over the nanowall structure. The conformal layer(s) is at least a portion of a photoactive junction. A method for making a photovoltaic device includes generating a nanowall structure on a substrate surface and conformally depositing at least one layer over the nanowall structure thereby forming at least one photoactive junction. A solar panel includes at least one photovoltaic device based on a nanowall structure. The solar panel isolates such devices from its surrounding atmospheric environment and permits the generation of electrical power. Optoelectronic device may also incorporate a photovoltaic device based on a nanowall structure.
摘要翻译：一种光电器件，其包括衬底和设置在衬底表面上的纳米壁结构。该装置还包括在纳米壁结构上共形沉积的至少一层。保形层是光活性连接的至少一部分。制造光伏器件的方法包括在衬底表面上产生纳米壁结构，并在纳米壁结构上共形沉积至少一层，从而形成至少一个光活性结。太阳能电池板包括至少一个基于纳米壁结构的光伏器件。太阳能电池板将这些装置与其周围的大气环境隔离，并允许产生电力。光电子器件还可以包括基于纳米壁结构的光伏器件。

57. 发明申请

US20080110486A1 Amorphous-crystalline tandem nanostructured solar cells 审中-公开
标题翻译：无定形晶体串联纳米结构太阳能电池
公开(公告)号：US20080110486A1
公开(公告)日：2008-05-15
申请号：US11599677
申请日：2006-11-15
申请人： Loucas Tsakalakos , Bastiaan Arie Korevaar
发明人： Loucas Tsakalakos , Bastiaan Arie Korevaar
IPC分类号： H01L31/042 , H01L31/00 , H05H1/24 , C25D5/00 , B05D5/12
CPC分类号： H01L31/20 , B82Y20/00 , B82Y30/00 , C23C18/00 , C25D1/006 , C25D7/126 , H01L31/0687 , H01L51/4266 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic device that includes a plurality of elongated nanostructures disposed on the surface of a substrate and a multilayered film deposited conformally over the elongated nanostructures forming a plurality of photoactive junctions. A method making such a photovoltaic device includes generating a plurality of elongated nanostructures on a substrate surface and conformally depositing a multilayered film forming a plurality of photoactive junctions. The plurality of photoactive junctions are designed to capture different wavelengths of light. A solar panel includes at least one photovoltaic device.
摘要翻译：一种光伏器件，其包括设置在衬底表面上的多个细长纳米结构，以及多个淀积膜，其平行地沉积在形成多个光活性接头的细长纳米结构上。制造这种光伏器件的方法包括在衬底表面上产生多个细长的纳米结构，并共形沉积形成多个光活性接头的多层膜。多个光活性连接点被设计成捕获不同波长的光。太阳能电池板包括至少一个光伏器件。

58. 发明授权

US09496446B2 Photovoltaic devices and method of making 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US09496446B2
公开(公告)日：2016-11-15
申请号：US13362813
申请日：2012-01-31
申请人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov , Hongying Peng
发明人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov , Hongying Peng
IPC分类号： H01L31/00 , H01L31/073 , H01L31/0749
CPC分类号： H01L31/073 , H01L31/0749 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.
摘要翻译：介绍了光伏器件。光电器件包括透明导电层; 设置在所述透明导电层上的窗口层; 以及设置在窗口层上的吸收层。窗口层包括邻近透明导电层设置的低扩散层和介于低扩散层和吸收层之间的高扩散性层。还提出了制造光伏器件的方法。

59. 发明授权

US09147582B2 Manufacturing methods for semiconductor devices 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09147582B2
公开(公告)日：2015-09-29
申请号：US13329418
申请日：2011-12-19
申请人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
发明人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
IPC分类号： H01L31/0296 , H01L21/477 , H01L31/18 , H01L31/0392
CPC分类号： H01L21/477 , H01L31/03925 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.
摘要翻译：提供一种制造半导体组件的方法。该制造方法包括热处理包括设置在第一支撑件上的第一半导体层的第一半导体组件，并且热处理包括设置在第二支撑件上的第二半导体层的第二半导体组件。第一和第二半导体组件被同时热处理，并且第一和第二半导体组件被布置成使得第一半导体层在热处理期间面向第二半导体层。

60. 发明授权

US09034686B2 Manufacturing methods for semiconductor devices 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09034686B2
公开(公告)日：2015-05-19
申请号：US13538352
申请日：2012-06-29
申请人： Hongying Peng , Bastiaan Arie Korevaar , Jinbo Cao , Stephen Lorenco Araujo , Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
发明人： Hongying Peng , Bastiaan Arie Korevaar , Jinbo Cao , Stephen Lorenco Araujo , Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
IPC分类号： H01L31/18 , H01L31/073
CPC分类号： H01L31/1828 , H01L31/073 , H01L31/18 , H01L31/1872 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the first layer, and a window layer disposed over the metal layer. Heating the stack includes transforming at least a portion of the first layer from an amorphous phase to a crystalline phase. Heating may be performed using any of various configurations, such as, for example, heating an individual stack, or using a face-to-face configuration of multiple stacks. The stack may be used for fabricating a photovoltaic device.
摘要翻译：本发明的实施例包括一种方法。该方法包括加热层叠。层叠包括包含镉和锡的第一层，设置在第一层上的金属层和设置在金属层上的窗口层。加热堆叠包括将第一层的至少一部分从非晶相转变为结晶相。可以使用各种配置中的任何一种来执行加热，例如加热单个堆叠，或者使用多个堆叠的面对面配置。堆叠可以用于制造光伏器件。

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