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51. 外观设计

USD381030S Sputtering target 失效
公开(公告)号：USD381030S
公开(公告)日：1997-07-15
申请号：US47081
申请日：1995-11-21
申请人： Avi Tepman
设计人： Avi Tepman

52. 发明授权

US5516403A Reversing orientation of sputtering screen to avoid contamination 失效
标题翻译：溅射屏的反向取向以避免污染
公开(公告)号：US5516403A
公开(公告)日：1996-05-14
申请号：US357695
申请日：1994-12-16
申请人： John Forster , James S. Van Gogh , Avi Tepman
发明人： John Forster , James S. Van Gogh , Avi Tepman
IPC分类号： C23C14/34 , C23C14/56 , H01J37/34 , H01L21/203
CPC分类号： H01J37/3447 , C23C14/34 , C23C14/564 , H01J37/34
摘要： A sputtering apparatus deposits a layer of material on a substrate. The apparatus includes a screening member, such as a plate collimator or a tube collimator, located between the target and substrate. A motor drive reverses the respective positions of the two opposite sides of the screening device which respectively face the substrate and the target.
摘要翻译：溅射装置在衬底上沉积一层材料。该装置包括位于靶和衬底之间的屏蔽构件，例如板准直器或管准直器。电动机驱动器反转分别面对基板和目标的屏蔽装置的两个相对侧的相应位置。

53. 发明授权

US5484011A Method of heating and cooling a wafer during semiconductor processing 失效
标题翻译：在半导体处理期间加热和冷却晶片的方法
公开(公告)号：US5484011A
公开(公告)日：1996-01-16
申请号：US289989
申请日：1994-08-12
申请人： Avi Tepman , Howard Grunes , Dana Andrews
发明人： Avi Tepman , Howard Grunes , Dana Andrews
IPC分类号： C23C14/50 , H01J37/32 , H01L21/00 , H01L21/687 , H01L21/02
CPC分类号： H01L21/68721 , C23C14/50 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32862 , H01L21/67069 , Y10T29/41
摘要： A clamping ring and temperature regulated platen for clamping a wafer to the platen and regulating the temperature of the wafer. The force of the clamping ring against the wafer is produced by the weight of the clamping ring. A roof shields all but a few contact regions of the interface between the wafer and clamp from receiving depositing particles so that a coating formed on the wafer makes continuous contact with the clamping ring in only a few narrow regions that act as conductive bridges when the depositing layer is conductive.
摘要翻译：用于将晶片夹持到压板并调节晶片的温度的夹紧环和温度调节压板。夹紧环抵靠晶片的力由夹紧环的重量产生。屋顶屏蔽来自接收沉积颗粒的晶片和夹具之间的接口的所有除了几个接触区域，使得形成在晶片上的涂层在仅存在几个狭窄区域中与夹紧环连续接触，当狭缝区域当存在层是导电的。

54. 发明授权

US5380414A Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor 失效
标题翻译：屏蔽和准直器粘贴沉积室与周期性地用作受体的晶片支架
公开(公告)号：US5380414A
公开(公告)日：1995-01-10
申请号：US75259
申请日：1993-06-11
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： C23C14/34 , C23C14/56 , H01J37/32
CPC分类号： H01J37/32862 , C23C14/34 , C23C14/564
摘要： A deposition chamber includes a target and an acceptor for supporting a wafer during a deposition cycle. The acceptor is made out of a pasting material in order that a pasting cycle can be run periodically in the deposition chamber to form a barrier between the layers of the target material to prevent the layer of target material from becoming too thick and thereby cracking and flaking. A shield protects the interior of the chamber during a deposition cycle. A collimator may be present between the target and the acceptor. A plasma is formed in the chamber and selectively attracted toward the target for deposition of target material onto a wafer or toward the acceptor for pasting acceptor material onto the shield and the bottom of the collimator, if present. A plurality of wafers are cycled through the deposition chamber for depositing the deposition material on their surface. After the plurality of wafers, a pasting cycle is run, depositing the pasting material around the interior of the shield, on the collimator and on the target. The target is then cleaned of pasting material while using a dummy wafer in the deposition chamber.
摘要翻译：沉积室包括靶和用于在沉积循环期间支撑晶片的受体。受体由粘贴材料制成，以便可以在沉积室中周期性地运行粘贴循环，以在目标材料层之间形成阻挡层，以防止目标材料层变得太厚，从而破裂和剥落。屏蔽在沉积循环期间保护室的内部。目标和受体之间可能存在准直仪。在室中形成等离子体并选择性地朝向靶吸附，以将目标材料沉积到晶片上或朝向受体，以将受体材料粘贴到屏蔽件和准直仪的底部（如果存在）上。多个晶片循环通过沉积室，用于在其表面上沉积沉积材料。在多个晶片之后，运行粘贴循环，将粘贴材料围绕屏蔽件的内部，准直器和目标物体沉积。然后在沉积室中使用伪晶片的同时清除目标物的粘贴材料。

55. 发明授权

US5186718A Staged-vacuum wafer processing system and method 失效
标题翻译：分级真空晶圆加工系统及方法
公开(公告)号：US5186718A
公开(公告)日：1993-02-16
申请号：US685976
申请日：1991-04-15
申请人： Avi Tepman , Howard Grunes , Sasson Somekh , Dan Maydan
发明人： Avi Tepman , Howard Grunes , Sasson Somekh , Dan Maydan
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67167 , H01L21/67184 , H01L21/67742 , Y10S148/006 , Y10S148/169 , Y10T29/41 , Y10T29/413
摘要： A processing system for workpieces such as semiconductor wafers is disclosed which incorporates multiple, isolated vacuum stages between the cassette load lock station and the main vacuum processing chambers. A vacuum gradient is applied between the cassette load lock and the main processing chambers to facilitate the use of a very high degree of vacuum in the processing chambers without lengthy pump down times. Separate robot chambers are associated with the vacuum processing chambers and the load lock(s). In addition, separate transport paths are provided between the two robot chambers to facilitate loading and unloading of workpieces. Pre-treatment and post-treatment chambers may be incorporated in the two transport paths.
摘要翻译：公开了一种用于诸如半导体晶片的工件的处理系统，其在盒加载锁定站和主真空处理室之间并入多个隔离的真空级。在盒式加载锁和主处理室之间施加真空梯度，以便在处理室中使用非常高的真空度，而不需要冗长的抽空时间。分离的机器人腔室与真空处理室和负载锁相关联。另外，在两个机器人室之间提供单独的输送路径，以便于加工和卸载工件。预处理和后处理室可以并入两个运输路径中。

56. 发明授权

US07459056B2 Pad conditioning head for CMP process 失效
标题翻译：用于CMP工艺的垫片调节头
公开(公告)号：US07459056B2
公开(公告)日：2008-12-02
申请号：US11927048
申请日：2007-10-29
申请人： Alexander S Polyak , Avi Tepman
发明人： Alexander S Polyak , Avi Tepman
IPC分类号： C23F1/00 , B24B1/00 , B24B49/00 , B24B7/00
CPC分类号： B24B53/017 , H01L21/31053
摘要： In a first aspect, a first apparatus is provided for a chemical mechanical polishing (CMP) process. The first apparatus includes (1) a rotatable member; (2) an end effector adapted to receive and retain a conditioning disk; and (3) an elastic device disposed between the rotatable member and the end effector. The elastic device is (a) adapted to rotate the end effector via a torque from the rotatable member, and (b) flexibly extensible so as to impart a force to the end effector while permitting the end effector to deviate from a perpendicular alignment with the rotatable member in order for a conditioning surface of the conditioning disk to conform to an irregular polishing surface of a pad being conditioned. Numerous other aspects are provided, including methods and apparatus for using liquid or gas to deter polishing slurry or debris from entering the conditioning head.
摘要翻译：在第一方面，提供了用于化学机械抛光（CMP）工艺的第一设备。第一装置包括（1）可旋转构件; （2）适于接收和保持调节盘的端部执行器; 和（3）设置在可旋转构件和末端执行器之间的弹性装置。弹性装置是（a）适于通过来自可旋转构件的扭矩旋转末端执行器，以及（b）柔性可伸展的，以便向末端执行器施加力，同时允许末端执行器偏离与可旋转构件，以便调节盘的调节表面与被调节的垫的不规则抛光表面相一致。提供了许多其它方面，包括使用液体或气体来阻止抛光浆料或碎屑进入调节头的方法和装置。

57. 发明申请

US20080279658A1 BATCH EQUIPMENT ROBOTS AND METHODS WITHIN EQUIPMENT WORK-PIECE TRANSFER FOR PHOTOVOLTAIC FACTORY 审中-公开
标题翻译：装配设备的工艺和方法在设备工作中转让光伏工厂
公开(公告)号：US20080279658A1
公开(公告)日：2008-11-13
申请号：US11747372
申请日：2007-05-11
申请人： Robert Z. Bachrach , Avi Tepman , Alexander S. Polyak
发明人： Robert Z. Bachrach , Avi Tepman , Alexander S. Polyak
IPC分类号： B65H1/00
CPC分类号： B25J15/0052 , B25J15/0226 , H01L21/67236 , H01L21/67276 , H01L21/67715 , H01L21/67721 , H01L21/67733 , H01L21/67736 , H01L21/67742 , H01L21/67748
摘要： The present invention generally comprises equipment for an automated high volume batch work-piece manufacturing factory comprising work-piece handling and work-piece processing in a high productivity factory architecture capable of producing 1,000 or more work-piece an hour. The work-pieces may be presented to the equipment from a stacked supply to a parallel array. Additionally, the work-pieces may be transferred between manufacturing architectures by an array to array batch transfer. The work-pieces may be transferred within the manufacturing architecture in a parallel to parallel batch transfer operation. The robotic operations may be between robotic devices, between robotic devices and processing equipment, and within processing equipment.
摘要翻译：本发明通常包括用于自动化大批量批量工件制造工厂的设备，其包括能够每小时生产1,000个或更多个工件的高生产率工厂结构中的工件处理和工件加工。工件可以从堆叠的供应提供给设备到并行阵列。另外，工件可以通过阵列在制造架构之间转移到阵列批量传输。工件可以在并行批量传输操作的同时在制造架构内转移。机器人操作可以在机器人设备之间，机器人设备和处理设备之间以及处理设备内。

58. 发明授权

US07288165B2 Pad conditioning head for CMP process 失效
标题翻译：用于CMP工艺的垫片调节头
公开(公告)号：US07288165B2
公开(公告)日：2007-10-30
申请号：US10970365
申请日：2004-10-21
申请人： Alexander S Polyak , Avi Tepman
发明人： Alexander S Polyak , Avi Tepman
IPC分类号： C23F1/00 , B24B1/00 , B24B49/00 , B24B7/00
CPC分类号： B24B53/017 , H01L21/31053
摘要： In a first aspect, a first apparatus is provided for a chemical mechanical polishing (CMP) process. The first apparatus includes (1) a rotatable member; (2) an end effector adapted to receive and retain a conditioning disk; and (3) an elastic device disposed between the rotatable member and the end effector. The elastic device is (a) adapted to rotate the end effector via a torque from the rotatable member, and (b) flexibly extensible so as to impart a force to the end effector while permitting the end effector to deviate from a perpendicular alignment with the rotatable member in order for a conditioning surface of the conditioning disk to conform to an irregular polishing surface of a pad being conditioned. Numerous other aspects are provided, including methods and apparatus for using liquid or gas to deter polishing slurry or debris from entering the conditioning head.
摘要翻译：在第一方面，提供了用于化学机械抛光（CMP）工艺的第一设备。第一装置包括（1）可旋转构件; （2）适于接收和保持调节盘的端部执行器; 和（3）设置在可旋转构件和末端执行器之间的弹性装置。弹性装置是（a）适于通过来自可旋转构件的扭矩旋转末端执行器，以及（b）柔性可伸展的，以便向末端执行器施加力，同时允许末端执行器偏离与可旋转构件，以便调节盘的调节表面与被调节的垫的不规则抛光表面相一致。提供了许多其它方面，包括使用液体或气体来阻止抛光浆料或碎屑进入调节头的方法和装置。

59. 发明授权

US07256132B2 Substrate centering apparatus and method 失效
标题翻译：基板定心装置及方法
公开(公告)号：US07256132B2
公开(公告)日：2007-08-14
申请号：US10631650
申请日：2003-07-31
申请人： Alexander Lerner , Avi Tepman , Donald Olgato
发明人： Alexander Lerner , Avi Tepman , Donald Olgato
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/68
摘要： A semiconductor substrate centering mechanism includes a plurality of substrate support pins, each pin having a top surface. The top surfaces of the pins define a plane in which the substrate is supported. Each pin has a tab mounted eccentrically at the top surface of the pin. The tabs extend upwardly relative to the top surfaces of the pins. The centering mechanism further includes a pin rotation mechanism adapted to rotate each pin. The pin rotation mechanism rotates the pins between a first position in which the tabs define an envelope that is larger than a circumference of the substrate and a second position in which the tabs define a centered position for the substrate. A telescoping arrangement of nesting shield segments may also be provided for each pin to prevent processing fluid from reaching a shaft of the pin. In one aspect the centering mechanism is coupled to a substrate support of a substrate processing location, and thus allows a substrate to be centered as it is lowered to the processing location.
摘要翻译：半导体基板定心机构包括多个基板支撑销，每个销具有顶面。销的顶表面限定了其中衬底被支撑的平面。每个销具有偏心地安装在销的顶表面处的突片。凸片相对于销的顶部表面向上延伸。定心机构还包括适于旋转每个销的销旋转机构。销旋转机构使销在第一位置和第二位置之间旋转，在第一位置中，突片限定了大于衬底周长的外壳，其中突片限定了衬底的居中位置。也可以为每个销提供嵌套屏蔽段的伸缩布置，以防止处理流体到达销的轴。在一个方面，定心机构耦合到衬底处理位置的衬底支撑件，并且因此允许衬底在被降低到处理位置时居中。

60. 发明申请

US20060049040A1 Apparatus and method for two dimensional magnetron scanning for sputtering onto flat panels 审中-公开
标题翻译：用于溅射到平板上的二维磁控管扫描的装置和方法
公开(公告)号：US20060049040A1
公开(公告)日：2006-03-09
申请号：US11211141
申请日：2005-08-24
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： C23C14/00
CPC分类号： H01J37/3408
摘要： A rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron includes a closed plasma loop formed in a convolute shape, for example, a rectangularized helix with an inner pole of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole having the opposed polarity. External actuators move the magnetron slidably suspended from a gantry which sliding perpendicularly on the chamber walls.
摘要翻译：放置在矩形靶的背面的矩形磁控管，以在用于将靶材溅射到矩形板上的溅射反应器中加强等离子体。磁控管的尺寸仅略低于目标的尺寸，并且在靶的两个垂直方向上扫描，扫描长度例如对于2m靶的扫描长度为约100mm。扫描可以沿着平行于目标侧的两个链接和两个连接对角线沿着双Z图案。磁控管包括形成为卷积形状的闭合等离子体环，例如，具有沿着单个路径延伸的几乎恒定宽度的内极的矩形螺旋，并且具有由具有相反极性的外极完全包围的一个磁极。外部执行器将磁控管可移动地悬挂在垂直于室壁上滑动的龙门架上。

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