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51. 发明授权

US6051849A Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer 失效
标题翻译：包括从下面的氮化镓层延伸的侧面氮化镓层的氮化镓半导体结构
公开(公告)号：US6051849A
公开(公告)日：2000-04-18
申请号：US32190
申请日：1998-02-27
申请人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
发明人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
IPC分类号： H01L21/20 , H01L33/00 , H01V33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. Although dislocation defects may propagate vertically from the underlying gallium nitride layer to the grown gallium nitride layer through the mask openings, the overgrown gallium nitride layer is relatively defect free. The overgrown gallium nitride semiconductor layer may be overgrown until the overgrown gallium nitride layer coalesces on the mask, to form a continuous overgrown monocrystalline gallium nitride semiconductor layer. The gallium nitride semiconductor layer may be grown using metalorganic vapor phase epitaxy. Microelectronic devices may be formed in the overgrown gallium nitride semiconductor layer.
摘要翻译：通过用包括其中的开口阵列的掩模掩蔽下面的氮化镓层来制造氮化镓半导体层，并且通过开口阵列将掩模下方的氮化镓层生长到掩模上，从而形成杂色的氮化镓半导体层。尽管位错缺陷可能通过掩模开口从下面的氮化镓层垂直传播到生长的氮化镓层，但是过度生长的氮化镓层相对无缺陷。杂色生长的氮化镓半导体层可能长满，直到杂色的氮化镓层在掩模上聚结，形成连续的长满的单晶氮化镓半导体层。可以使用金属有机气相外延生长氮化镓半导体层。微电子器件可以形成在杂草生长的氮化镓半导体层中。

52. 发明申请

US20120145991A1 HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON TILT SUBSTRATE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：高品质非极性半导体半导体元件及其制造方法
公开(公告)号：US20120145991A1
公开(公告)日：2012-06-14
申请号：US13392059
申请日：2010-08-27
申请人： Ok Hyun Nam , Jong Jin Jang
发明人： Ok Hyun Nam , Jong Jin Jang
IPC分类号： H01L33/06 , H01L33/14
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32
摘要： Provided are a high-quality non-polar/semi-polar semiconductor device and a manufacturing method thereof. A template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor device and improve the internal quantum efficiency and light extraction efficiency thereof. In the method for manufacturing the semiconductor device, a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The crystal plane of the sapphire substrate is tilted in a predetermined direction, and the template layer includes a nitride semiconductor layer and a GaN layer on the tilted sapphire substrate.
摘要翻译：提供一种高品质非极性/半极性半导体器件及其制造方法。模板层形成在蓝宝石晶面相对于偏离预定方向倾斜的离轴上，以减小半导体器件的缺陷密度，提高其内部量子效率和光提取效率。在制造半导体器件的方法中，在具有用于生长非极性或半极性氮化物半导体层的晶面的蓝宝石衬底上形成模板层和半导体器件结构。蓝宝石衬底的晶面沿预定方向倾斜，并且模板层在倾斜的蓝宝石衬底上包括氮化物半导体层和GaN层。

53. 发明申请

US20110170071A1 Laser display device 失效
标题翻译：激光显示装置
公开(公告)号：US20110170071A1
公开(公告)日：2011-07-14
申请号：US13064413
申请日：2011-03-23
申请人： Joong-kon Son , Seoung-jae Im , Ok-hyun Nam
发明人： Joong-kon Son , Seoung-jae Im , Ok-hyun Nam
IPC分类号： G03B21/28 , G03B21/14
CPC分类号： H04N9/3129
摘要： Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.
摘要翻译：提供了一种激光显示装置。激光显示装置可以包括被配置为发射至少一个激光束的至少一个光源，被配置为用至少一个激光束执行扫描的至少一个扫描单元，以及被配置为产生激发光和散射的图像形成单元通过从扫描单元接收至少一个激光束来形成图像。

54. 发明申请

US20060137976A1 Vitamin ion generator 有权
标题翻译：维生素离子发生器
公开(公告)号：US20060137976A1
公开(公告)日：2006-06-29
申请号：US11297365
申请日：2005-12-09
申请人： Sung Lee , Seong Lee , Ok Hyun
发明人： Sung Lee , Seong Lee , Ok Hyun
IPC分类号： C25B9/00 , C25B3/00
CPC分类号： H01T23/00 , A61L9/22
摘要： The present invention discloses a vitamin ion generator. The ion generator including a discharge electrode, a ground electrode and vitamins housed in the discharge electrode is installed inside a discharge hole of an air conditioner. A power supply for applying power is connected to the discharge electrode. A reservoir for storing water generated in a heat exchanger of the air conditioner supplies water to the discharge electrode. According to the operation of the air conditioner, the water housed in the reservoir is filled in the discharge electrode. The vitamins housed in the discharge electrode are dissolved in the water and exposed to the surface of the discharge electrode. The vitamin solution exposed to the surface of the discharge electrode is discharged to the direction of the ground electrode by power applied to the discharge electrode. The discharged vitamin ions are externally discharged from the air conditioner by a ventilator of the air conditioner. The vitamin C ions are coupled with the electrons from the discharge electrode. As a result, the vitamin ion generator prevents the electrons discharged from the discharge electrode from generating a large quantity of OH−, neutralizes OH− generated by electron collision to prevent free radical operations in a human body, and transmits the vitamin C ions to the human body for anti-oxidization.
摘要翻译：本发明公开了一种维生素离子发生器。包含放电电极，接地电极和容纳在放电电极中的维生素的离子发生器安装在空调的排出孔的内部。用于施加电力的电源连接到放电电极。用于存储在空调的热交换器中产生的水的储存器将水供应到放电电极。根据空调的操作，容纳在储存器中的水被填充在放电电极中。容纳在放电电极中的维生素溶解在水中并暴露于放电电极的表面。暴露于放电电极表面的维生素溶液通过施加到放电电极的电力而向接地电极的方向排出。排出的维生素离子通过空调机的呼吸机从空调机外部排出。维生素C离子与来自放电电极的电子耦合。结果，维生素离子发生器防止从放电电极排出的电子产生大量的OH - ，中和由电子碰撞产生的OH - 以防止自由基并将维生素C离子透过人体进行抗氧化。

55. 发明申请

US20060093001A1 Multiple-wavelength laser diode and method of fabricating the same 审中-公开
标题翻译：多波长激光二极管及其制造方法
公开(公告)号：US20060093001A1
公开(公告)日：2006-05-04
申请号：US11220790
申请日：2005-09-08
申请人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
发明人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , H01S5/32325 , H01S5/32341 , H01S5/4087
摘要： A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are sequentially stacked and aligned such that centers of emission points of the at least three LDs form a line.
摘要翻译：提供了一种多波长激光二极管（LD）及其制造方法。多波长LD包括至少三个LD，其顺序地堆叠和对准，使得至少三个LD的发射点的中心形成一条线。

56. 发明授权

US06901097B2 Semiconductor laser diode and method for fabricating the same 有权
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US06901097B2
公开(公告)日：2005-05-31
申请号：US10188973
申请日：2002-07-05
申请人： Tae-geun Kim , Ok-hyun Nam
发明人： Tae-geun Kim , Ok-hyun Nam
IPC分类号： H01L21/312 , H01S5/22 , H01S5/227 , H01S5/30 , H01S5/323 , H01S5/00
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2213 , H01S5/2272 , H01S5/32341
摘要： A semiconductor laser diode and a manufacturing for fabricating the same are provided. The semiconductor laser diode includes a substrate, masks that are formed at both sides of the substrate, a light generating layer that is formed on the substrate between the masks, current blocking layers that are formed on the masks, respectively, and first and second electrode that are formed on the bottom surface of the substrate and on the top surface of the light generating layer, respectively. The optical generating layer and the current blocking layer are simultaneously formed through single growth, and the current blocking layer confines current and light in a lateral direction in the light generating layer. Thus, a semiconductor laser diode manufacturing process can be simplified, and threshold current for laser oscillation can be lowered.
摘要翻译：提供半导体激光二极管及其制造方法。半导体激光二极管包括基板，形成在基板两侧的掩模，形成在掩模之间的基板上的光产生层，分别形成在掩模上的电流阻挡层，第一和第二电极分别形成在基板的底表面和光产生层的顶表面上。光生成层和电流阻挡层通过单一生长同时形成，并且电流阻挡层在光产生层中沿横向限制电流和光。因此，可以简化半导体激光二极管制造工艺，并且可以降低用于激光振荡的阈值电流。

57. 发明申请

US20050087758A1 GaN-based III - V group compound semiconductor device and p-type electrode for the same 有权
标题翻译： GaN基III-V族化合物半导体器件和p型电极相同
公开(公告)号：US20050087758A1
公开(公告)日：2005-04-28
申请号：US10953282
申请日：2004-09-30
申请人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
发明人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
IPC分类号： H01L21/285 , H01L29/20 , H01L29/45 , H01L33/32 , H01L33/42 , H01S5/042 , H01S5/323 , H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32
摘要： Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.
摘要翻译：提供了使用该p型电极和III-V族GaN基化合物半导体器件。电极包括设置在III-V族氮化物化合物半导体层上并由含有溶质的Zn基材料形成的第一层; 以及层叠在第一层上并由选自Au，Co，Pd，Pt，Ru，Rh，Ir，Ta，Cr，Mn，Mo，Tc，W，Re，Fe中的至少一种形成的第二层，Sc，Ti，Sn，Ge，Sb，Al，ITO和ZnO。 Zn基p型电极具有优异的电学，光学和热学特性。

58. 发明授权

KR101562495B1 무선통신 단말기의 강화유리 교환 장치 및 방법 有权
标题翻译：用于交换无线通信终端的温度玻璃的装置和方法
公开(公告)号：KR101562495B1
公开(公告)日：2015-10-22
申请号：KR20150063557
申请日：2015-05-07
申请人： SEO OK HYUN
发明人： SEO OK HYUN
IPC分类号： H04M1/02
CPC分类号： H04M1/02
摘要： 본발명은무선통신단말기의강화유리교환장치및 방법에관한것으로서, 보다상세하게는무선통신단말기의디스플레이에부착된강화유리가파손되었을때 파손된강화유리를제거하고, 교환하기위한무선통신단말기의강화유리교환장치및 방법에관한것이다. 또한, 상기목적을달성하기위해본 발명에따른무선통신단말기의강화유리교환장치는무선통신단말기의디스플레이에부착된강화유리가파손되었을때 파손된강화유리를제거하고, 교환하기위한무선통신단말기의강화유리교환장치에있어서, 파손된강화유리가부착되어있는단말기를가압고정하기위한고정부와상기고정부에의해고정된단말기의디스플레이와파손된강화유리사이에삽입하여파손된강화유리의단부를디스플레이로부터소정의거리만큼이격시키기위한칼날부와상기칼날부에의해단부가이격된파손된강화유리의일측에걸친후 타측으로당겨파손된강화유리를디스플레이로부터분리시키기위한와이어를포함하는것을특징으로한다.
摘要翻译：本发明涉及一种更换无线通信终端的加强玻璃的方法和装置。更具体地，本发明用于去除附着在无线通信终端的显示器上的破碎的加强玻璃，并且替换无线通信终端的加强玻璃。该装置包括：固定单元，其按压固定附着有破碎的钢化玻璃的无线通信终端; 刀片单元，其插入在所述断裂的加强玻璃与由所述固定单元固定的所述端子的显示器之间，以将所述破碎的加强玻璃的端部与所述显示器隔开预定距离; 以及悬挂在破碎的加强玻璃的一侧的线，其端部被刀片单元间隔开，并被拉到另一侧以将破碎的钢化玻璃与显示器分离。

59. 发明公开

KR20180022121A 빨래 건조대 审中-公开
标题翻译：洗衣晒衣架
公开(公告)号：KR20180022121A
公开(公告)日：2018-03-06
申请号：KR20160107026
申请日：2016-08-23
申请人： LEE OK HYUN
发明人： LEE OK HYUN
IPC分类号： D06F57/04 , D06F57/02 , D06F57/08
摘要： 본발명은빨래건조대에관한것으로, 보다상세하게는좁은공간에서도많은양의빨래를널어건조할수 있도록함과동시에절첩구조로구성되어보관및 이동을용이하게할 수있도록한 빨래건조대에관한것이다. 상기한목적을달성하기위한본 발명은빨래건조대에있어서, 케이스부와, 상기케이스부에회동되게설치되는다리부와, 상기케이스부의상부로인출및 삽입되도록설치되는인출부와, 상기인출부에회동되게설치되는빨래걸이부를포함하여구성된것을특징으로한다.
摘要翻译：更具体地，本发明涉及一种即使在狭窄的空间中也能够干燥大量衣物并且被构造成折叠以便于储存和运输的晾衣架。根据本发明的一个方面，提供了一种晾衣架，包括壳体，可枢转地安装在壳体部分上的腿部，安装成可拉出并插入壳体部分的上部的抽屉部分，并安装了一个可以旋转的晾衣架。

60. 发明公开

KR20120036095A Water-proofing plate and the method 审中-公开
标题翻译：防水板及其方法
公开(公告)号：KR20120036095A
公开(公告)日：2012-04-17
申请号：KR20100097780
申请日：2010-10-07
申请人： KIM OK HYUN , LEE SEUNG MIN
发明人： KIM OK HYUN , LEE SEUNG MIN
IPC分类号： E04B1/68 , B29B11/10
摘要： PURPOSE: A connection structure of a water stop plate and a manufacturing method thereof are provided to reduce manufacturing costs by using an existing mold frame. CONSTITUTION: A manufacturing method of a connection structure of a water stop plate is as follows. Polyvinyl chloride powder is put into a melting tank and is melted at a temperature of 150-200 degrees. The polyvinyl chloride powder is moved to an extruding frame using a moving unit and is extrusion-molded in a rectangular box shape. A connection structure(50) is manufactured by cooling the extrusion-molded product and cutting the cooled product a specific length using a cutting blade.
摘要翻译：目的：提供止水板的连接结构及其制造方法，以通过使用现有的模架来降低制造成本。构成：挡水板的连接结构的制造方法如下。将聚氯乙烯粉末放入熔融槽中，并在150-200度的温度下熔化。使用移动单元将聚氯乙烯粉末移动到挤压机架，并以矩形箱形挤出成型。连接结构（50）通过冷却挤出成形品并使用切割刀片将特定长度切割成冷却产品来制造。

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