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1. 发明申请

WO2011025290A3 HIGH QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON TILT SUBSTRATE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：高品质非极性半极半导体元件及其制造方法
公开(公告)号：WO2011025290A3
公开(公告)日：2011-06-30
申请号：PCT/KR2010005762
申请日：2010-08-27
申请人： SEOUL OPTO DEVICE CO LTD , KOREA POLYTECH UNIV IND ACAD , NAM OK HYUN , JANG JONG JIN
发明人： NAM OK HYUN , JANG JONG JIN
IPC分类号： H01L33/02
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32
摘要： The present invention relates to a high quality non-polar/semi-polar semiconductor element and a fabrication method thereof, wherein a nitride semiconductor crystal is formed on a sapphire crystal plane that enables the growth of a non-polar/semi-polar nitride semiconductor layer to eliminate an piezoelectric effect; and a template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor element and improves the internal quantum efficiency and extraction efficiency. In the fabrication method of a semiconductor element by forming a template layer and a semiconductor element structure on the sapphire substrate having a crystal plane for the growth of a non-polar or semi-polar nitride semiconductor layer, the sapphire substrate is a substrate having the crystal plane tilted in a predetermined direction, and a nitride semiconductor layer and the template layer comprising a GaN layer are formed on the tilt substrate.
摘要翻译：本发明涉及一种高品质非极性/半极性半导体元件及其制造方法，其中氮化物半导体晶体形成在蓝宝石晶体平面上，其能够生长非极性/半极性氮化物半导体层消除压电效应; 并且在规定方向倾斜的蓝宝石晶面的对应偏轴上形成模板层，以降低半导体元件的缺陷密度，提高内部量子效率和提取效率。在通过在具有用于生长非极性或半极性氮化物半导体层的晶面的蓝宝石衬底上形成模板层和半导体元件结构的半导体元件的制造方法中，蓝宝石衬底是具有晶面在预定方向上倾斜，并且氮化物半导体层和包括GaN层的模板层形成在倾斜衬底上。

2. 发明申请

WO2011025291A2 HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON AN UNEVENLY PATTERNED SUBSTRATE AND A PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：不规则图案化基板上的高质量非极性/半极性半导体元件及其制造方法
公开(公告)号：WO2011025291A2
公开(公告)日：2011-03-03
申请号：PCT/KR2010005763
申请日：2010-08-27
申请人： SEOUL OPTO DEVICE CO LTD , KOREA POLYTECH UNIV IND ACAD , NAM OK HYUN , YOO GEUN HO
发明人： NAM OK HYUN , YOO GEUN HO
IPC分类号： H01L33/02
CPC分类号： H01L33/20 , H01L33/0062 , H01L33/16
摘要： Disclosed are: a high-quality non-polar/semi-polar semiconductor element with reduced defect density and improved internal quantum efficiency and light-extraction efficiency in the semiconductor element; and a production method therefor. The semiconductor element production method is one in which a template layer and semiconductor element structure are formed on a sapphire substrate having a crystal face for growing a non-polar or semi-polar nitride semiconductor layer, wherein the sapphire substrate is etched to form an unevenly structured pattern, and then the nitride semiconductor layer and the template layer which comprises a GaN layer are formed on the sapphire substrate on which the unevenly structured pattern was formed.
摘要翻译：本发明公开了在半导体元件中缺陷密度降低并且内部量子效率和光提取效率提高的高质量的非极性/半极性半导体元件; 及其制造方法。半导体元件制造方法是在具有用于生长非极性或半极性氮化物半导体层的晶面的蓝宝石衬底上形成模板层和半导体元件结构，其中蓝宝石衬底被蚀刻以形成不均匀然后在其上形成有不均匀结构化图案的蓝宝石衬底上形成氮化物半导体层和包括GaN层的模板层。

3. 发明申请

WO2008106077A1 SUBSTITUTED BENZODIAZEPINONES, BENZOXAZEPINONES AND BENZOTHIAZEPINONES AS SODIUM CHANNEL BLOCKERS 审中-公开
标题翻译：作为钠通道阻断剂的取代苯并恶嗪酮，苯并恶唑酮和苯并噻唑酮
公开(公告)号：WO2008106077A1
公开(公告)日：2008-09-04
申请号：PCT/US2008/002441
申请日：2008-02-25
申请人： MERCK & CO., INC. , HOYT, Scott, B. , OK, Dong , OK, Hyun, O. , LONDON, Clare , DUFFY, Joseph, L.
发明人： HOYT, Scott, B. , OK, Dong , OK, Hyun, O. , LONDON, Clare , DUFFY, Joseph, L.
IPC分类号： A01N43/62 , A61K31/55
CPC分类号： C07D281/10 , C07D245/06 , C07D267/14
摘要： The present invention is directed to substituted benzodiazepinones, benzoxazepinones and benzothiazepinones compounds that are sodium channel blockers useful for the treatment of chronic and neuropathic pain. The compounds of the present invention are also useful for the treatment of other conditions, including disorders of the CNS such as anxiety, depression, epilepsy, manic depression and bipolar disorder. This invention also provides pharmaceutical compositions comprising a compound of the present invention, either alone, or in combination with one or more therapeutically active compounds, and a pharmaceutically acceptable carrier. This invention further comprises methods for the treatment of acute pain, chronic pain, visceral pain, inflammatory pain, neuropathic pain and disorders of the CNS including, but not limited to, epilepsy, manic depression, depression, anxiety and bipolar disorder comprising administering the compounds and pharmaceutical compositions of the present invention.
摘要翻译：本发明涉及用作治疗慢性和神经性疼痛的钠通道阻滞剂的取代苯并二氮杂酮，苯并氧氮杂酮和苯并噻唑酮化合物。本发明的化合物还可用于治疗其他病症，包括CNS的疾病如焦虑症，抑郁症，癫痫症，躁狂抑郁症和双相性精神障碍。本发明还提供包含单独的或与一种或多种治疗活性化合物组合的本发明化合物和药学上可接受的载体的药物组合物。本发明还包括用于治疗急性疼痛，慢性疼痛，内脏痛，炎性疼痛，神经性疼痛和中枢神经系统疾病的方法，包括但不限于癫痫症，躁狂抑郁症，抑郁症，焦虑和双相情感障碍，包括给予化合物和本发明的药物组合物。

4. 发明申请

WO2005047270A2 SUBSTITUTED TRIAZOLES AS SODIUM CHANNEL BLOCKERS 审中-公开
标题翻译：取代三唑作为钠通道阻断剂
公开(公告)号：WO2005047270A2
公开(公告)日：2005-05-26
申请号：PCT/US2004037280
申请日：2004-11-05
申请人： MERCK & CO INC , PARK MIN K , CHAKRAVARTY PRASUN K , ZHOU BISHAN , GONZALEZ EDWARD , OK HYUN , PALUCKI BRENDA , PARSONS WILLIAM H , SISCO ROSEMARY , FISHER MICHAEL H
发明人： PARK MIN K , CHAKRAVARTY PRASUN K , ZHOU BISHAN , GONZALEZ EDWARD , OK HYUN , PALUCKI BRENDA , PARSONS WILLIAM H , SISCO ROSEMARY , FISHER MICHAEL H
IPC分类号： C07D249/10 , C07D403/10 , A61K31/4196 , A61P25/00
CPC分类号： C07D249/10 , C07D403/10
摘要： Substituted triazole compounds represented by Formula I, II or III, or pharmaceutically acceptable salts thereof. Pharmaceutical compositions comprise an effective amount of the instant compounds, either alone, or in combination with one or more other therapeutically active compounds, and a pharmaceutically acceptable carrier. Methods of treating conditions associated with, or caused by, sodium channel activity, including, for example, acute pain, chronic pain, visceral pain, inflammatory pain, neuropathic pain, migraine, headache pain, migraine headache, epilepsy, irritable bowel syndrome, diabetic neuropathy, multiple sclerosis, manic depression and bipolar disorder, comprise administering an effective amount of the present compounds, either alone, or in combination with one or more other therapeutically active compounds. A method of administering local anesthesia comprises administering an effective amount of a compound of the instant invention, either alone, or in combination with one or more other therapeutically active compounds, and a pharmaceutically acceptable carrier.
摘要翻译：由式I，II或III表示的取代的三唑化合物或其药学上可接受的盐。药物组合物包含单独的或与一种或多种其它治疗活性化合物组合的有效量的本发明化合物和药学上可接受的载体。治疗与钠通道活性相关或由其引起的疾病的方法，包括例如急性疼痛，慢性疼痛，内脏痛，炎性疼痛，神经性疼痛，偏头痛，头痛，偏头痛，癫痫，肠易激综合征，糖尿病神经病，多发性硬化症，躁狂抑郁症和双相性精神障碍，包括单独施用有效量的本发明化合物或与一种或多种其它治疗活性化合物组合施用。施用局部麻醉的方法包括单独或与一种或多种其它治疗活性化合物和药学上可接受的载体一起施用有效量的本发明化合物。

5. 发明申请

WO2010077624A1 BIARYL CARBOXAMIDES 审中-公开
公开(公告)号：WO2010077624A1
公开(公告)日：2010-07-08
申请号：PCT/US2009/067080
申请日：2009-12-08
申请人： MERCK SHARP & DOHME CORP. , OGAWA, Anthony , OK, Hyun, O. , ONDEYKA, Debra , UJJAINWALLA, Feroze , VANDE BUNTE, Ellen
发明人： OGAWA, Anthony , OK, Hyun, O. , ONDEYKA, Debra , UJJAINWALLA, Feroze , VANDE BUNTE, Ellen
IPC分类号： A01N43/90 , A61K31/519
CPC分类号： A61K31/519 , C07D401/04 , C07D401/06 , C07D401/14 , C07D403/04 , C07D403/06 , C07D409/14 , C07D413/04 , C07D413/14
摘要： This invention provides compounds of Formula (I) which are PAFR antagonists: Formula (I) and the pharmaceutically acceptable salts thereof. The compounds are useful for treating PAF-mediated disorders, and can be used in methods for treating atherosclerosis and preventing or reducing risk for atherosclerotic disease events. The compounds are also useful for treating or ameliorating pain, e.g. inflammatory pain and/or nociceptive pain, and for treating or ameliorating autoimmune and/or inflammatory diseases, among other conditions.
摘要翻译：本发明提供了作为PAFR拮抗剂的式（I）化合物：式（I）及其药学上可接受的盐。该化合物可用于治疗PAF介导的病症，并且可用于治疗动脉粥样硬化和预防或降低动脉粥样硬化疾病事件风险的方法。该化合物也可用于治疗或改善疼痛，例如，炎性疼痛和/或伤害性疼痛，以及用于治疗或改善自身免疫和/或炎性疾病等疾病。

6. 发明申请

WO2010051245A1 BENZIMIDAZOLE AND AZA-BENZIMIDAZOLE CARBOXAMIDES 审中-公开
标题翻译：苯并咪唑和氨基苯并咪唑羧酰胺
公开(公告)号：WO2010051245A1
公开(公告)日：2010-05-06
申请号：PCT/US2009/062034
申请日：2009-10-26
申请人： MERCK SHARP & DOHME CORP. , CHU, Lin , OGAWA, Anthony , OK, Hyun, O. , UJJAINWALLA, Feroze
发明人： CHU, Lin , OGAWA, Anthony , OK, Hyun, O. , UJJAINWALLA, Feroze
IPC分类号： A01N43/50 , A61K31/415
CPC分类号： C07D401/14 , C07D403/14 , C07D413/14
摘要： This invention provides compounds of Formula I which are PAFR antagonists: I and the pharmaceutically acceptable salts thereof. The compounds are useful for treating PAF-mediated disorders, and can be used in methods for treating atherosclerosis and preventing or reducing risk for atherosclerotic disease events. The compounds are also useful for treating or ameliorating pain, e.g. inflammatory pain and/or nociceptive pain, and for treating or ameliorating autoimmune and/or inflammatory diseases, among other conditions.
摘要翻译：本发明提供了作为PAFR拮抗剂的式I化合物：I及其药学上可接受的盐。该化合物可用于治疗PAF介导的病症，并且可用于治疗动脉粥样硬化和预防或降低动脉粥样硬化疾病事件风险的方法。该化合物也可用于治疗或改善疼痛，例如，炎性疼痛和/或伤害性疼痛，以及用于治疗或改善自身免疫和/或炎性疾病等疾病。

7. 发明申请

WO2007120574A3 DIARYL SUBSTITUTED ALKANES 审中-公开
标题翻译： DIARYL取代的碱
公开(公告)号：WO2007120574A3
公开(公告)日：2008-01-31
申请号：PCT/US2007008583
申请日：2007-04-06
申请人： MERCK & CO INC , CHU LIN , LI BING , OGAWA ANTHONY K , OK HYUN O , ONDEYKA DEBRA L , PATEL MINAL , SISCO ROSEMARY , UJJAINWALLA FEROZE , XU JINYOU
发明人： CHU LIN , LI BING , OGAWA ANTHONY K , OK HYUN O , ONDEYKA DEBRA L , PATEL MINAL , SISCO ROSEMARY , UJJAINWALLA FEROZE , XU JINYOU
IPC分类号： C07D213/65 , A61K31/4412 , A61P29/00 , C07D401/04 , C07D413/14 , C07D417/14
CPC分类号： C07D213/65 , C07D401/14 , C07D413/14 , C07D417/14
摘要： The instant invention provides compounds of Formula (II) which are 5-lipoxygenase activating protein inhibitors. Compounds of Formula (II) are useful as anti-atherosclerotic, anti-asthmatic, anti-allergic, anti-inflammatory and cytoprotective agents.
摘要翻译：本发明提供了作为5-脂氧合酶活化蛋白抑制剂的式（II）化合物。式（II）的化合物可用作抗动脉粥样硬化，抗哮喘，抗过敏，抗炎和细胞保护剂。

8. 发明申请

WO2005050296A1 APPARATUS AND METHOD OF CONVERTING IMAGE SIGNAL FOR SIX COLOR DISPLAY DEVICE, AND SIX COLOR DISPLAY DEVICE HAVING OPTIMUM SUBPIXEL ARRANGEMENT 审中-公开
标题翻译：用于六色显示装置的转换图像信号的装置和方法，以及具有最佳SUBPIXEL装置的六色显示装置
公开(公告)号：WO2005050296A1
公开(公告)日：2005-06-02
申请号：PCT/KR2004/003020
申请日：2004-11-20
申请人： SAMSUNG ELECTRONICS CO., LTD. , YANG, Young-Chol , PARK, Du-Sik , LEE, Ho-Young , OK, Hyun-Wook , CHOE, Won-Hee , ROH, Nam-Seok , HONG, Mun-Pyo , KIM, Chang-Yeong , LEE, Seong-Deok , SONG, Keun-Kyu
发明人： YANG, Young-Chol , PARK, Du-Sik , LEE, Ho-Young , OK, Hyun-Wook , CHOE, Won-Hee , ROH, Nam-Seok , HONG, Mun-Pyo , KIM, Chang-Yeong , LEE, Seong-Deok , SONG, Keun-Kyu
IPC分类号： G02F1/133
CPC分类号： G09G3/3607 , G09G3/20 , G09G3/3648 , G09G2300/0452 , G09G2320/0242 , G09G2340/06
摘要： A method of converting image signals for a display device including six-color subpixels is provided, which includes: classifying three-color input image signals into maximum, middle, and minimum; decomposing the classified signals into six-color components; determining a maximum among the six-color components; calculating a scaling factor; and extracting six-color output signals.
摘要翻译：提供一种转换包括六色子像素的显示装置的图像信号的方法，其包括：将三色输入图像信号分类为最大，中间和最小; 将分类信号分解为六色成分; 确定六色成分中的最大值; 计算缩放因子; 并提取六色输出信号。

9. 发明申请

WO2011046292A3 HIGH-QUALITY NONPOLAR OR SEMIPOLAR SEMICONDUCTOR DEVICE ON POROUS NITRIDE SEMICONDUCTOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：多孔氮化物半导体的高品质非晶半导体器件及其制造方法
公开(公告)号：WO2011046292A3
公开(公告)日：2011-06-30
申请号：PCT/KR2010005764
申请日：2010-08-27
申请人： SEOUL OPTO DEVICE CO LTD , KOREA POLYTECH UNIV IND ACAD , NAM OK HYUN , LEE DONG HUN , YOO GEUN HO
发明人： NAM OK HYUN , LEE DONG HUN , YOO GEUN HO
IPC分类号： H01L33/16
CPC分类号： H01L33/16 , H01L29/2003 , H01L31/0304 , H01L31/1856 , H01L33/0062 , H01L33/007 , H01L33/12 , H01L33/20 , H01L33/22 , H01S5/0213 , H01S5/3202 , H01S5/32341 , H01S2304/12 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a high-quality nonpolar or semipolar semiconductor device and a fabrication method thereof, which can reduce the defect density of a nitride semiconductor layer and improve the inner quantum efficiency and the light extraction efficiency. The method for fabricating the semiconductor device is to form a semiconductor device structure and a template layer on a sapphire or SiC or Si substrate having a crystal face for the growth of a nonpolar or semipolar nitride semiconductor layer, and the method comprises the steps of: forming the nitride semiconductor layer on the substrate; performing surface modification for the nitride semiconductor layer into a porous layer; forming the template layer in which a nitride semiconductor layer is regrown on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.
摘要翻译：本发明提供了一种可以降低氮化物半导体层的缺陷密度并提高内部量子效率和光提取效率的高质量非极性或半极性半导体器件及其制造方法。制造半导体器件的方法是在具有用于生长非极性或半极性氮化物半导体层的晶面的蓝宝石或SiC或Si衬底上形成半导体器件结构和模板层，并且该方法包括以下步骤：在衬底上形成氮化物半导体层; 对氮化物半导体层进行多孔层的表面改性; 形成在表面改性的氮化物半导体层上再生长氮化物半导体层的模板层; 以及在所述模板层上形成所述半导体器件结构。

10. 发明申请

WO2009048547A1 DIPHENYL SUBSTITUTED CYCLOALKANES 审中-公开
标题翻译：二苯基取代的环烷基
公开(公告)号：WO2009048547A1
公开(公告)日：2009-04-16
申请号：PCT/US2008/011522
申请日：2008-10-06
申请人： MERCK & CO., INC. , OGAWA, Anthony , UJJAINWALLA, Feroze , LI, Bing , CHU, Lin , PATEL, Minal , ARMSTRONG, Helen , OK, Hyun Ok , SISCO, Rosemary , MACDONALD, Dwight , HUTCHINSON, John , PERRIER, Helene
发明人： OGAWA, Anthony , UJJAINWALLA, Feroze , LI, Bing , CHU, Lin , PATEL, Minal , ARMSTRONG, Helen , OK, Hyun Ok , SISCO, Rosemary , MACDONALD, Dwight , HUTCHINSON, John , PERRIER, Helene
IPC分类号： C07C69/00
CPC分类号： C07D401/12 , C07D213/30 , C07D213/55 , C07D213/56 , C07D237/20 , C07D239/26 , C07D277/24 , C07D401/14 , C07D403/04 , C07D403/12 , C07D403/14 , C07D413/10 , C07D413/12 , C07D413/14 , C07D417/10 , C07D417/12 , C07D417/14 , C07D453/02
摘要： The present invention provides compounds of Formula I which are FLAP inhibitors useful as anti-atherosclerotic, anti-asthmatic, anti-allergic, anti-inflammatory and cytoprotective agents.
摘要翻译：本发明提供了可用作抗动脉粥样硬化，抗哮喘，抗过敏，抗炎和细胞保护作用的FLAP抑制剂的式I化合物。

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