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41. 发明公开

EP1399291A1 APPARATUS AND METHOD FOR MEASURING TOOL DEGRADATION 有权
标题翻译：设备和方法测量磨损而产生工具
公开(公告)号：EP1399291A1
公开(公告)日：2004-03-24
申请号：EP02729106.1
申请日：2002-05-02
申请人： MOTOROLA, INC. , Infineon Technologies SC300 GmbH & Co. KG
发明人： ROESNER, Michael , SCHNEEGANS, Manfred , WALLIS, David
IPC分类号： B23Q17/09 , B23Q17/24 , G01N21/65 , B24B49/12 , B28D5/00
CPC分类号： B24B37/005 , B23Q17/0909 , B23Q17/24 , B24B21/04 , B24B27/0683 , B24B49/12 , B24B49/183 , G01N21/65
摘要： A machining apparatus (10) comprises a material removing tool (12) movably mounted for removing material from a workpiece (14); means for illuminating (42, 54) a sample area upon a tool surface (34) with excitation radiation; means for receiving (42, 54) sample light emitted from the sample area; a spectral analyzer (54) for performing a spectral analysis of the sample light received; and means for determining (60) the condition of the tool at the sample area from the spectral analysis of the sample light. The wear of the tool (12) is determined as such a condition. Operation parameters of the machining apparatus (10) are adjusted according to the determined wear. An example application is a wafer dicing tool.

42. 发明公开

EP1320442A1 ARRANGEMENT FOR POLISHING DISK-LIKE OBJECTS 有权
标题翻译： DEVICE抛光圆盘状制品
公开(公告)号：EP1320442A1
公开(公告)日：2003-06-25
申请号：EP01983462.1
申请日：2001-09-04
申请人： Infineon Technologies SC300 GmbH & Co. KG
发明人： EBNER, Katrin , GLASHAUSER, Walter
IPC分类号： B24B37/04 , B24B41/06
CPC分类号： B24B37/30 , B24B41/06
摘要： A polish head (3) for Chemical Mechanical Polishing comprises a backing film (5) made of silicone on a rigid support element (6, 7), preferably consisting of amorphous ceramic. The silicone backing film (5) is fabricated by molding, thereby enabling an appropriate cross-sectional shape for specific polishing needs. The invention provides a uniform polishing of a semiconductor wafer (4).

43. 发明公开

EP1273973A1 Method for adjusting a temperature in a resist process 审中-公开
标题翻译： Methode zur Anpassung der Temperatur in einem Photoresistverfahren
公开(公告)号：EP1273973A1
公开(公告)日：2003-01-08
申请号：EP01116132.0
申请日：2001-07-03
申请人： Infineon Technologies SC300 GmbH & Co. KG
发明人： Schedel, Thorsten , Seidel, Torsten
IPC分类号： G03F7/38
CPC分类号： G03F7/38 , G03F7/40
摘要： A test reticle with pad and antenna structures having varying critical dimensions (31-39) is provided to measure sidewall angles (1, 1') developing in resist sidewalls (3) of clear lines (5) originating from resist flow (8) due to too high temperatures in a resist process on a lithographic track after exposure of a semiconductor wafer. A scanning electron microscope is used to perform the measurement. A sequence of temperatures (T1, T2) is applied in a postbake step each to process one wafer, and the sidewall angle (1) is determined afterwards from e.g. a critical dimension measurement with a known resist thickness (11). An error signal is issued, if a threshold value of a sidewall angle is exceeded. The temperature of the resist process, e.g. postbake, is then adjusted to a temperature below the temperature causing the warning signal.
摘要翻译：提供具有不同临界尺寸（31-39）的焊盘和天线结构的测试掩模版，用于测量由抗蚀剂流（8）产生的清晰线（5）的抗蚀剂侧壁（3）中形成的侧壁角（1,1'），在半导体晶片曝光之后在光刻轨道上的抗蚀剂工艺中的太高的温度。扫描电子显微镜用于进行测量。在后烘烤步骤中施加温度序列（T1，T2）以处理一个晶片，并且之后确定侧壁角（1）。具有已知抗蚀剂厚度（11）的临界尺寸测量。如果超过侧壁角度的阈值，则发出错误信号。抗蚀剂工艺的温度，例如后烘烤，然后调整到温度低于导致警告信号的温度。

44. 发明公开

EP1251553A1 Method of recycling a dummy silicon wafer 有权
标题翻译： Verfahren zum回收eine Dummy-Wafers aus Silizium
公开(公告)号：EP1251553A1
公开(公告)日：2002-10-23
申请号：EP01109698.9
申请日：2001-04-19
申请人： Infineon Technologies SC300 GmbH & Co. KG , Infineon Technologies AG , MOTOROLA, INC.
发明人： Breeden, Terry , Tucker, Mike , Ottow, Stefan , Koestler, Wolfram , Wissel, Dan
IPC分类号： H01L21/314 , H01L21/311 , H01L21/00
CPC分类号： H01L21/31111 , H01L21/02032 , H01L21/3185
摘要： The present invention relates to a recycling procedure for 300 mm nitride dummies which have been previously provided with a special stabilization layer made of silicon dioxide. The recycling procedure is essentially based on selectively wet etching the deposited silicon nitride with respect to the silicon dioxide stabilization layer, preferably with hot phosphoric acid at 160°C.
In particular, the present invention provides a method of handling a silicon wafer which is employed as a dummy wafer during a nitride deposition process, comprising the steps of depositing a silicon dioxide layer on the wafer surface, performing the nitride deposition process on the wafer to deposit silicon nitride or silicon oxinitride on the wafer surface until a predetermined layer thickness is reached, and etching the silicon nitride or silicon oxinitride layer selectively with respect to the silicon dioxide layer.
摘要翻译：本发明涉及先前提供有由二氧化硅制成的特殊稳定层的300mm氮化物虚拟物的再循环过程。回收过程基本上是基于相对于二氧化硅稳定层选择性湿法蚀刻沉积的氮化硅，优选在160℃下用热磷酸进行湿式蚀刻。特别地，本发明提供一种处理硅晶片的方法，作为在氮化物沉积工艺期间的虚设晶片，包括以下步骤：在晶片表面上沉积二氧化硅层，在晶片上进行氮化物沉积工艺以在晶片表面上沉积氮化硅或氮氧化硅直到达到预定的层厚度并且相对于二氧化硅层选择性地蚀刻氮化硅或氮氧化硅层。

45. 发明公开

EP1251401A1 Method of measuring the aberration of a projection lens 审中-公开
标题翻译： Verfahren zur Messung der Aberration eines Projektionsobjektivs
公开(公告)号：EP1251401A1
公开(公告)日：2002-10-23
申请号：EP01109760.7
申请日：2001-04-20
申请人： Infineon Technologies SC300 GmbH & Co. KG , Infineon Technologies AG , MOTOROLA, INC.
发明人： Ganz, Dietmar , Maltabes, John , Schedel, Thorsten
IPC分类号： G03F7/20
CPC分类号： G03F7/706 , G03F7/70633
摘要： A new inspection method is provided for testing lens aberrations during production of semiconductor wafers in projection apparatus such as wafer steppers or scanners. It is checked for lens degradation by measuring aberration specific measurement pattern structures (3) preferrably being arranged in fields of a test mask, and then projected to corresponding measurement pattern structures (8) on the wafer. A signal is issued, if threshold values (2) representing a corresponding aberration such as spherical aberration, astigmatism, coma or three-leaf-clover are exceeded. For the latter measurement symmetric DT-like pairs of rectangles (303) are provided in order to compare left-to-right-differences in critical dimension with threshold values (2). Also, structures combining sagittal and tangential lines into, e.g., waggon wheel-like structures (304) are provided. As a result of the signal (1) issued, a tool dedication strategy such as to reduce tool specifications can be initiated.
摘要翻译：提供了一种新的检查方法，用于在诸如晶片步进器或扫描仪的投影设备中制造半导体晶片期间测试透镜像差。通过测量优选地被设置在测试掩模的场中的像差特定测量图案结构（3）来检查晶体退化，然后投影到晶片上的相应测量图案结构（8）。如果超过表示像差的像差（例如球面像差，散光，彗差或三叶三叶草）的阈值（2），则发出信号。对于后一种测量，提供对称的类似DT的矩形对（303），以便将临界尺寸的左右差异与阈值（2）进行比较。另外，提供将矢状线和切向线组合成例如轮状轮状结构（304）的结构。作为发出信号（1）的结果，可以启动诸如减少工具规格的工具奉献策略。

46. 发明公开

EP1231628A1 Method for roughening a surface of a semioconductor substrate 审中-公开
标题翻译： Methode，dieOberflächeeines Halbleiters aufzurauhen
公开(公告)号：EP1231628A1
公开(公告)日：2002-08-14
申请号：EP01103005.3
申请日：2001-02-08
申请人： Infineon Technologies SC300 GmbH & Co. KG
发明人： Storbeck, Olaf , Kurtenbach, Andreas , Kuerner, Wolfgang
IPC分类号： H01L21/02 , H01L21/8242
CPC分类号： H01L28/84 , H01L21/32135
摘要： The present invention relates to a method for roughening a surface of a semiconductor substrate (1) comprising the steps of arranging the semiconductor substrate (1) in a furnace, providing a gas mixture comprising an inert gas and a halogen or a halogen-hydrogen compound in the furnace and providing a temperature between 700 and 1200°C in the furnace. The inventive method is capable of roughening the surface of a semiconductor substrate resulting in an increased capacitor area with an increased capacity.
摘要翻译：本发明涉及一种用于使半导体衬底（1）的表面粗糙化的方法，包括以下步骤：将半导体衬底（1）布置在炉中，提供包含惰性气体和卤素或卤素 - 氢化合物的气体混合物并在炉内提供700至1200℃的温度。本发明的方法能够使半导体衬底的表面变粗糙，从而增加电容器面积并增加容量。

47. 发明公开

EP1231626A1 Measurement arrangement 审中-公开
标题翻译：测量安排
公开(公告)号：EP1231626A1
公开(公告)日：2002-08-14
申请号：EP01103176.2
申请日：2001-02-10
申请人： Infineon Technologies SC300 GmbH & Co. KG , NanoPhotonics AG
发明人： Abraham Michael , Marx Eckhard
IPC分类号： H01L21/00
CPC分类号： H01L21/67253 , H01L21/67772
摘要： A measurement device (1), i.e. a metrology tool, and a vehicle (2) are combined to provide a mobile metrology in a fabrication facility. Peripheral equipment such as a device transfer unit (3), for , e.g., FOUPs in semiconductor manufacturing, an electronic control system (5) with, e.g., a PC, monitor and keyboard and optionally a vacuum pump (9) is also provided in module frames of the vehicle (2). The measurement arrangement particularly reduces bottleneck situations in equipment qualifying of processing tools (40) during fast ramp-up phases of, e.g., semiconductor manufacturing facilities, thereby saving costs. The construction is based on PGVs or AGVs and allows a fast operation directly at the location of a processing tool (40). With the possible exception of power supply or operator control, the measurement arrangement can operate fully autonomous.
摘要翻译：测量装置（1）即计量工具和车辆（2）组合在一起以在制造设施中提供移动计量。还提供了用于例如半导体制造中的FOUP的装置传送单元（3），具有例如PC，监视器和键盘以及可选的真空泵（9）的电子控制系统（5）的外围设备（2）的模块框架。该测量装置特别地减少了在例如半导体制造设施的快速上升阶段期间处理工具（40）的设备合格性中的瓶颈情况，由此节约了成本。该结构基于PGV或AGV，并且允许在加工工具（40）的位置处直接快速操作。除电源或操作员控制可能的情况外，测量装置可以完全自主操作。

48. 发明公开

EP1184763A1 Arrangement for data transmission between an equipment for manufacturing of a semiconductor device and a communicating device and method for operating the arrangement 审中-公开
标题翻译：安排用于设备之间的数据传输的用于制造半导体装置和该装置的操作的通信设备和方法
公开(公告)号：EP1184763A1
公开(公告)日：2002-03-06
申请号：EP00118408.4
申请日：2000-08-24
申请人： Infineon Technologies SC300 GmbH & Co. KG
发明人： Walter, Ricco , Marx, Eckhard
IPC分类号： G05B19/418 , H01L21/00
CPC分类号： G05B19/4185 , G05B2219/31124 , G05B2219/31145 , G05B2219/31157 , G05B2219/31176 , G05B2219/45031 , H01L21/67242 , Y02P90/18 , Y02P90/185
摘要： An arrangement for data transmission comprises an equipment (3) for manufacturing of a semiconductor device in a manufacturing process with an integrated measurement tool (5) for producing measurement data (30) correlating to the manufacturing process. A communicating device (2) performs a data exchange of logistic and process data (20) with the equipment (3) via a bus system (1) by means of a standardized data communication protocol. A measurement application system (6) is connected to the bus system (1) via a bus system hub (4) for sniffing exchanged logistic and process data (20) and to the measurement tool (5) for capturing produced measurement data (30). The measurement application system (6) is applicable for assigning the measurement data (30) to correlating logistic and process data (20). As a result, the measurement application system (6) and measurement tool (5) can easily be integrated into an existing bus system network (1) with one or more manufacturing equipments (3, 11, 12) connected to the network.
摘要翻译：在集成的测量工具（5），用于生产的测量数据（30）相关，以在制造过程的设备（3）用于制造在制造过程中的半导体装置的的数据传输包括布置。甲通信设备（2）执行数据的后勤和处理数据的与所述设备（3）通过总线系统（1）由一个标准化的数据通信协议的方式交换（20）。的测量的应用系统（6）经由总线系统轮毂（4）连接到所述总线系统（1），用于嗅探交换的逻辑和处理数据（20）和所述测量工具（5），用于捕获所产生的测量数据（30），测量应用系统（6），适用于测量数据（30）分配给进行相关的后勤和处理数据（20）。其结果是，该测量应用系统（6）和测量工具（5）可以容易地与连接到网络的一个或多个制造设备（3，11，12）集成到现有的总线系统网络（1）。

49. 发明授权

EP1318211B1 Arrangement for monitoring a thickness of a layer depositing on a sidewall of a processing chamber 有权
标题翻译：布置用于监视其被沉积在处理室的内部的层的厚度
公开(公告)号：EP1318211B1
公开(公告)日：2008-08-27
申请号：EP01129129.1
申请日：2001-12-07
申请人： Infineon Technologies SC300 GmbH & Co. KG
发明人： Tegeder, Volker
IPC分类号： C23C16/52 , C23C16/44 , G01B11/06 , H01J37/32
CPC分类号： H01J37/32935 , C23C16/4407 , C23C16/52 , G01B11/0683

50. 发明授权

EP1399291B1 APPARATUS AND METHOD FOR MEASURING TOOL DEGRADATION 有权
标题翻译：设备和方法测量磨损而产生工具
公开(公告)号：EP1399291B1
公开(公告)日：2008-07-23
申请号：EP02729106.1
申请日：2002-05-02
申请人： Freescale Semiconductor, Inc. , Infineon Technologies SC300 GmbH & Co. KG
发明人： ROESNER, Michael , SCHNEEGANS, Manfred , WALLIS, David
IPC分类号： B23Q17/09 , B23Q17/24 , G01N21/65 , B24B49/12 , B28D5/00
CPC分类号： B24B37/005 , B23Q17/0909 , B23Q17/24 , B24B21/04 , B24B27/0683 , B24B49/12 , B24B49/183 , G01N21/65
摘要： A machining apparatus (10) comprises a material removing tool (12) movably mounted for removing material from a workpiece (14); means for illuminating (42, 54) a sample area upon a tool surface (34) with excitation radiation; means for receiving (42, 54) sample light emitted from the sample area; a spectral analyzer (54) for performing a spectral analysis of the sample light received; and means for determining (60) the condition of the tool at the sample area from the spectral analysis of the sample light. The wear of the tool (12) is determined as such a condition. Operation parameters of the machining apparatus (10) are adjusted according to the determined wear. An example application is a wafer dicing tool.

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