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1. 发明公开

EP1184725A1 Method for adjusting a lithographic tool 审中-公开
标题翻译：埃菲尔发公司
公开(公告)号：EP1184725A1
公开(公告)日：2002-03-06
申请号：EP00119138.6
申请日：2000-09-04
申请人： Infineon Technologies SC300 GmbH & Co. KG , Infineon Technologies AG , MOTOROLA, INC.
发明人： Maltabes, John , Schedel, Thorsten , Ganz, Dietmar
IPC分类号： G03F7/20
CPC分类号： G03F7/70483
摘要： For adjusting a lithographic tool (11) a method is provided, in which inspected wafer images of an defect inspection tool (20, 20') are correlated with images from a reference library in database (202), each reference image corresponding to an initially measured amount of misadjustment of lithographic tool parameters. The lithographic tool (11) is adjusted automatedly according to the reference image found with largest resemblance to the wafer image. Time for adjusting is saved, operator staff needed is reduced, and objective determination criteria provide high wafer quality and yield.
摘要翻译：为了调整光刻工具（11），提供了一种方法，其中缺陷检查工具（20,20'）的检查晶片图像与来自数据库（202）中的参考库的图像相关联，每个参考图像对应于初始测量光刻工具参数误调整量。根据与晶片图像最相似的参考图像自动调节光刻工具（11）。节省时间，减少操作人员，客观决定标准提供高晶圆质量和产量。

2. 发明公开

EP1251401A1 Method of measuring the aberration of a projection lens 审中-公开
标题翻译： Verfahren zur Messung der Aberration eines Projektionsobjektivs
公开(公告)号：EP1251401A1
公开(公告)日：2002-10-23
申请号：EP01109760.7
申请日：2001-04-20
申请人： Infineon Technologies SC300 GmbH & Co. KG , Infineon Technologies AG , MOTOROLA, INC.
发明人： Ganz, Dietmar , Maltabes, John , Schedel, Thorsten
IPC分类号： G03F7/20
CPC分类号： G03F7/706 , G03F7/70633
摘要： A new inspection method is provided for testing lens aberrations during production of semiconductor wafers in projection apparatus such as wafer steppers or scanners. It is checked for lens degradation by measuring aberration specific measurement pattern structures (3) preferrably being arranged in fields of a test mask, and then projected to corresponding measurement pattern structures (8) on the wafer. A signal is issued, if threshold values (2) representing a corresponding aberration such as spherical aberration, astigmatism, coma or three-leaf-clover are exceeded. For the latter measurement symmetric DT-like pairs of rectangles (303) are provided in order to compare left-to-right-differences in critical dimension with threshold values (2). Also, structures combining sagittal and tangential lines into, e.g., waggon wheel-like structures (304) are provided. As a result of the signal (1) issued, a tool dedication strategy such as to reduce tool specifications can be initiated.
摘要翻译：提供了一种新的检查方法，用于在诸如晶片步进器或扫描仪的投影设备中制造半导体晶片期间测试透镜像差。通过测量优选地被设置在测试掩模的场中的像差特定测量图案结构（3）来检查晶体退化，然后投影到晶片上的相应测量图案结构（8）。如果超过表示像差的像差（例如球面像差，散光，彗差或三叶三叶草）的阈值（2），则发出信号。对于后一种测量，提供对称的类似DT的矩形对（303），以便将临界尺寸的左右差异与阈值（2）进行比较。另外，提供将矢状线和切向线组合成例如轮状轮状结构（304）的结构。作为发出信号（1）的结果，可以启动诸如减少工具规格的工具奉献策略。

3. 发明授权

EP1184903B1 Method for forming a self-aligned dual damascene interconnection 有权
标题翻译：制造自对准双镶嵌化合物
公开(公告)号：EP1184903B1
公开(公告)日：2004-07-28
申请号：EP00118804.4
申请日：2000-08-30
申请人： MOTOROLA, INC.
发明人： Charles, Alain , Mautz, Karl , Maltabes, John , Petrucci, Joe
IPC分类号： H01L21/768
CPC分类号： H01L21/76808 , H01L21/76802 , H01L21/76804

4. 发明公开

EP1184903A1 Method for forming a self-aligned dual damascene interconnection, and formed structure 有权
标题翻译： Herstellung einer selbst-justierten Doppel-Damaszener-Verbindung
公开(公告)号：EP1184903A1
公开(公告)日：2002-03-06
申请号：EP00118804.4
申请日：2000-08-30
申请人： MOTOROLA, INC.
发明人： Charles, Alain , Mautz, Karl , Maltabes, John , Petrucci, Joe
IPC分类号： H01L21/768
CPC分类号： H01L21/76808 , H01L21/76802 , H01L21/76804
摘要： During manufacturing a multilayer semiconductor device (100), an electrical interconnection between the layers (21, 22) is formed by etching a passage (30) through the layers, filling the passage with a resist material (51) to a predetermined height (H), defining a trench (60) by further etching the passage above the resist material, removing the resist material to define a via (35) below the trench, and filing via and trench with metal (80).
摘要翻译：在制造多层半导体器件（100）期间，通过蚀刻通过层的通道（30）来形成层（21,22）之间的电互连，并将抗蚀剂材料（51）填充到预定高度（H ），通过进一步蚀刻抗蚀剂材料上方的通道来限定沟槽（60），去除抗蚀剂材料以在沟槽下方限定通孔（35），并通过金属（80）填充通孔和沟槽。

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