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1. 发明公开

EP1273973A1 Method for adjusting a temperature in a resist process 审中-公开
标题翻译： Methode zur Anpassung der Temperatur in einem Photoresistverfahren
公开(公告)号：EP1273973A1
公开(公告)日：2003-01-08
申请号：EP01116132.0
申请日：2001-07-03
申请人： Infineon Technologies SC300 GmbH & Co. KG
发明人： Schedel, Thorsten , Seidel, Torsten
IPC分类号： G03F7/38
CPC分类号： G03F7/38 , G03F7/40
摘要： A test reticle with pad and antenna structures having varying critical dimensions (31-39) is provided to measure sidewall angles (1, 1') developing in resist sidewalls (3) of clear lines (5) originating from resist flow (8) due to too high temperatures in a resist process on a lithographic track after exposure of a semiconductor wafer. A scanning electron microscope is used to perform the measurement. A sequence of temperatures (T1, T2) is applied in a postbake step each to process one wafer, and the sidewall angle (1) is determined afterwards from e.g. a critical dimension measurement with a known resist thickness (11). An error signal is issued, if a threshold value of a sidewall angle is exceeded. The temperature of the resist process, e.g. postbake, is then adjusted to a temperature below the temperature causing the warning signal.
摘要翻译：提供具有不同临界尺寸（31-39）的焊盘和天线结构的测试掩模版，用于测量由抗蚀剂流（8）产生的清晰线（5）的抗蚀剂侧壁（3）中形成的侧壁角（1,1'），在半导体晶片曝光之后在光刻轨道上的抗蚀剂工艺中的太高的温度。扫描电子显微镜用于进行测量。在后烘烤步骤中施加温度序列（T1，T2）以处理一个晶片，并且之后确定侧壁角（1）。具有已知抗蚀剂厚度（11）的临界尺寸测量。如果超过侧壁角度的阈值，则发出错误信号。抗蚀剂工艺的温度，例如后烘烤，然后调整到温度低于导致警告信号的温度。

2. 发明公开

EP1251401A1 Method of measuring the aberration of a projection lens 审中-公开
标题翻译： Verfahren zur Messung der Aberration eines Projektionsobjektivs
公开(公告)号：EP1251401A1
公开(公告)日：2002-10-23
申请号：EP01109760.7
申请日：2001-04-20
申请人： Infineon Technologies SC300 GmbH & Co. KG , Infineon Technologies AG , MOTOROLA, INC.
发明人： Ganz, Dietmar , Maltabes, John , Schedel, Thorsten
IPC分类号： G03F7/20
CPC分类号： G03F7/706 , G03F7/70633
摘要： A new inspection method is provided for testing lens aberrations during production of semiconductor wafers in projection apparatus such as wafer steppers or scanners. It is checked for lens degradation by measuring aberration specific measurement pattern structures (3) preferrably being arranged in fields of a test mask, and then projected to corresponding measurement pattern structures (8) on the wafer. A signal is issued, if threshold values (2) representing a corresponding aberration such as spherical aberration, astigmatism, coma or three-leaf-clover are exceeded. For the latter measurement symmetric DT-like pairs of rectangles (303) are provided in order to compare left-to-right-differences in critical dimension with threshold values (2). Also, structures combining sagittal and tangential lines into, e.g., waggon wheel-like structures (304) are provided. As a result of the signal (1) issued, a tool dedication strategy such as to reduce tool specifications can be initiated.
摘要翻译：提供了一种新的检查方法，用于在诸如晶片步进器或扫描仪的投影设备中制造半导体晶片期间测试透镜像差。通过测量优选地被设置在测试掩模的场中的像差特定测量图案结构（3）来检查晶体退化，然后投影到晶片上的相应测量图案结构（8）。如果超过表示像差的像差（例如球面像差，散光，彗差或三叶三叶草）的阈值（2），则发出信号。对于后一种测量，提供对称的类似DT的矩形对（303），以便将临界尺寸的左右差异与阈值（2）进行比较。另外，提供将矢状线和切向线组合成例如轮状轮状结构（304）的结构。作为发出信号（1）的结果，可以启动诸如减少工具规格的工具奉献策略。

3. 发明公开

EP1253497A1 Method for adjusting processing parameters of plate-like objects in a processing tool 有权转让
标题翻译：一种用于在处理设备调整板状物体的处理参数的方法
公开(公告)号：EP1253497A1
公开(公告)日：2002-10-30
申请号：EP01110455.1
申请日：2001-04-27
申请人： Infineon Technologies SC300 GmbH & Co. KG , Infineon Technologies AG , MOTOROLA, INC.
发明人： Mautz, Karl , Schedel, Thorsten , Schmidt, Sebastian
IPC分类号： G05B19/418 , H01L21/66
CPC分类号： G03F7/70625 , G03F7/70633 , G05B19/4188 , G05B2219/32053 , G05B2219/32055 , G05B2219/32056 , G05B2219/36377 , G05B2219/45232 , H01L22/20 , Y02P90/10 , Y02P90/20 , Y02P90/24
摘要： Processing parameters of at least one plate-like object(20), e.g. a semiconductor device or wafer, or a flat panel display, in a processing tool (1) are adjusted depending on which processing device (2a) out of at least one set of processing devices (2a, 2b) has been used for the semiconductor device (20) in a preceding step. This is provided by generating a virtual or physical token (10a), which connects the semiconductor device (20) identification with the processing device (2a, 2b) identification. This enables a compensation of tool-dependent effects in previous processing of a single device. An example is chemical mechanical polishing prior to lithography, where alignment marks can be deteriorated differently between CMP-apparatus. The amount of compensation is detected and evaluated by means of metrology tools, which - depending on the sequence of the metrology step relative to the processing step to be adjusted - either feed-forward or feed-backward their results to the processing tool (1). The yield of semiconductor device production is advantageously increased.
摘要翻译：至少一个平板状物体（20），E G的处理参数半导体装置或晶片或平板显示器中，在处理工具（1）被调整DEPENDING ON出至少一组处理设备的（2A，2B）已被用于半导体装置，其处理装置（2a）的（20）在一个步骤preceding-。这是通过生成虚拟或物理令牌（10A），其中半导体器件（20）与所述识别处理装置（2A，2B）识别连接提供。这使得能够在单个装置中的前一处理工具依赖效应的补偿。一个例子是光刻，其中对准标记可以不同CMP设备之间劣化之前机械抛光的化学物质。被检测的补偿量和的计量工具，其中来评价 - 根据测量步骤相对于处理步骤的顺序进行调整， - 可以是前馈或馈向后他们的结果向处理工具（1），半导体器件生产的产率有利地增加。

4. 发明公开

EP1258915A1 Method of detecting defects on a semiconductor device in a processing tool and an arrangement therefore 审中-公开
标题翻译：用于在Vorarbeitungsvorrichtung在半导体器件上检测缺陷的方法和装置
公开(公告)号：EP1258915A1
公开(公告)日：2002-11-20
申请号：EP01112140.7
申请日：2001-05-17
申请人： Infineon Technologies SC300 GmbH & Co. KG
发明人： Seidel, Torsten , Otto, Ralf , Schedel, Thorsten , Marx, Eckhard , Hraschan, Günther
IPC分类号： H01L21/66 , H01L21/00 , G03F7/20
CPC分类号： H01L21/67225 , G03F7/7065 , H01L21/67271 , H01L21/67288 , H01L22/12
摘要： A processing tool (1) for manufacturing semiconductor devices (2), e.g. a lithography cluster, comprises a device transfer area (8) with an optical sensor (10), preferably a CCD-camera, and an illumination system (11) mounted within, such that a semiconductor device (2) being transferred to or from one of its processing chambers (1a, 1b, 1c) can be scanned during its movement at low resolution. The scanning is performed twice, prior and after processing in at least one the processing chambers (1a, 1b, 1c) of the processing tool (1). Both images are compared and optionally subtracted from each other. Defects imposed to the semiconductor device due to contaminating particles only during the present processes with sizes larger than 10 µm are visible on the subtracted image, while defects imposed earlier are diminished as well as structures formed from e.g. a mask pattern below 10 µm. Pattern recognition allows an efficient classification of the defects being just detected in a processing tool (1). Thus, semiconductor device yield and metrology capacity are advantageously increased.
摘要翻译：所述的加工工具（1）用于制造半导体器件（2），例如光刻簇，包括用光学传感器（10），其安装于一个设备转移区域（8），优选为CCD摄像头，和在照明系统（11），测试并的半导体装置（2）被传递到或来自一个其处理室（1A，1B，1C）可以其在低分辨率运动期间进行扫描。扫描被执行两次，事先处理之后在至少一个处理室（1A，1B，1C）的加工工具（1）。两个图像进行比较，从海誓山盟OPTIONALLY减去。由于只在与尺寸小于10微米更大的本发明的方法的污染颗粒施加到半导体装置的缺陷是相减的图像上可见的，而所施加早些时候缺陷减少以及结构从E. G形成低于10微米的掩模图案。模式识别允许在仅仅加工工具（1）被检测的缺陷的有效的分类。因此，半导体器件的成品率和计量能力有利地增加。

5. 发明公开

EP1184725A1 Method for adjusting a lithographic tool 审中-公开
标题翻译：埃菲尔发公司
公开(公告)号：EP1184725A1
公开(公告)日：2002-03-06
申请号：EP00119138.6
申请日：2000-09-04
申请人： Infineon Technologies SC300 GmbH & Co. KG , Infineon Technologies AG , MOTOROLA, INC.
发明人： Maltabes, John , Schedel, Thorsten , Ganz, Dietmar
IPC分类号： G03F7/20
CPC分类号： G03F7/70483
摘要： For adjusting a lithographic tool (11) a method is provided, in which inspected wafer images of an defect inspection tool (20, 20') are correlated with images from a reference library in database (202), each reference image corresponding to an initially measured amount of misadjustment of lithographic tool parameters. The lithographic tool (11) is adjusted automatedly according to the reference image found with largest resemblance to the wafer image. Time for adjusting is saved, operator staff needed is reduced, and objective determination criteria provide high wafer quality and yield.
摘要翻译：为了调整光刻工具（11），提供了一种方法，其中缺陷检查工具（20,20'）的检查晶片图像与来自数据库（202）中的参考库的图像相关联，每个参考图像对应于初始测量光刻工具参数误调整量。根据与晶片图像最相似的参考图像自动调节光刻工具（11）。节省时间，减少操作人员，客观决定标准提供高晶圆质量和产量。

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