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41. 发明授权

US08350214B2 Charged particle beam applied apparatus 有权
标题翻译：带电粒子束施加装置
公开(公告)号：US08350214B2
公开(公告)日：2013-01-08
申请号：US13143404
申请日：2010-01-04
申请人： Hiroki Otaki , Momoyo Enyama , Hiroya Ohta
发明人： Hiroki Otaki , Momoyo Enyama , Hiroya Ohta
IPC分类号： H01L21/66 , G01N23/225
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , G01R31/305 , H01J37/3023 , H01J2237/004 , H01J2237/0044
摘要： Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.
摘要翻译：提供了一种可实现的多束式带电粒子束施加装置，能够实现二次带电粒子的高检测精度和加工特性不同的试样的高速度。孔径阵列（111）包括多个孔径图案。用于选择主光束通过的孔径图案的偏转器（109）设置在电子枪（102）（即带电粒子源）与孔径阵列（111）之间产生的带电粒子源图像的位置处，。在充电控制光束照明时，在信号检测光束照射时，选择孔径阵列（111）的孔径图案，透镜阵列（112），表面电场控制电极（ 118）等与每个波束扫描同步地切换。因此，控制电荷并且在合适的条件下分别在不同的定时检测信号。

42. 发明授权

US07906761B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07906761B2
公开(公告)日：2011-03-15
申请号：US12037623
申请日：2008-02-26
申请人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
发明人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
IPC分类号： G01N23/225 , H01J49/00
CPC分类号： G01N23/225 , H01J37/265 , H01J37/28
摘要： A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
摘要翻译：一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。此外，优化了许多光学参数和设备参数。此外，测量和调整所选择的一次光束的性质。

43. 发明授权

US07880143B2 Electron beam apparatus 有权
标题翻译：电子束装置
公开(公告)号：US07880143B2
公开(公告)日：2011-02-01
申请号：US11958717
申请日：2007-12-18
申请人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
发明人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/0435 , H01J2237/2448 , H01J2237/24564 , H01J2237/24592
摘要： A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.
摘要翻译：由单个电子源形成多个主光束，通过至少一个主光束来控制样品的表面电荷，同时使用除此之外的一次光束进行样品的检查。此外，对于用于表面电荷控制的一次光束的曝光区域和用于检查的主光束的曝光区域，单独设置表面电场强度。此外，控制用于表面电荷控制的主光束的电流以及用于表面电荷控制的主光束和用于检查的主光束之间的间隔。

44. 发明授权

US07863565B2 Electron beam inspection method and electron beam inspection apparatus 有权
标题翻译：电子束检查方法和电子束检查装置
公开(公告)号：US07863565B2
公开(公告)日：2011-01-04
申请号：US12149512
申请日：2008-05-02
申请人： Masaki Hasegawa , Hiroya Ohta
发明人： Masaki Hasegawa , Hiroya Ohta
IPC分类号： H01J37/26 , H01J37/29
CPC分类号： G01N23/225 , H01J37/026 , H01J37/285 , H01J37/29 , H01J2237/0047 , H01J2237/221 , H01J2237/2446 , H01J2237/24495 , H01J2237/2482 , H01J2237/2855
摘要： An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.
摘要翻译：电子束检查装置对反射电子进行成像并消除由电子束照射产生的负电荷。照射紫外线，照射紫外线的区域作为光电子图像显示。光电子图像和反射电子图像在彼此重叠的状态下显示在监视器上，以容易地掌握图像之间的位置关系和它们之间的尺寸差异。具体地，电子束的照射区域的形状包括在显示屏上照射的紫外线区域的形状。调整电子束的照射区域中的紫外线的强度，同时维持反射电子图像的反射电子成像条件。此外，在监视器上控制紫外线量调节机构，使得在观察紫外线照射期间获得的反射电子图像的同时调节紫外线的量。

45. 发明授权

US07126140B2 Multi-electron beam exposure method and apparatus 有权
标题翻译：多电子束曝光方法及装置
公开(公告)号：US07126140B2
公开(公告)日：2006-10-24
申请号：US11213750
申请日：2005-08-30
申请人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
发明人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
IPC分类号： H01J37/08
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/31764 , H01J2237/31767
摘要： A multi-electron beam exposure method and apparatus, wherein electron beams are applied to a sample surface mounted on a traveling sample stage to perform repeated exposure of chip patterns. An exposure region of the sample surface is partitioned into multiple stripe regions having a width in an x-axis direction, and each of the multiple stripe regions is further partitioned into multiple main fields having a width in a y-axis direction. At least one of the widths of the main fields in the x- and y-axis directions is set to a value, and exposure pattern data for one chip based on the partitioned main fields is stored as a unit. The stored exposure pattern data is readout a number of times corresponding to the number of chips repeatedly, and each electron beam provides repeated exposure of same regions of the chips.
摘要翻译：一种多电子束曝光方法和装置，其中将电子束施加到安装在行进样品台上的样品表面，以进行芯片图案的重复曝光。将样品表面的曝光区域划分为具有x轴方向宽度的多个条纹区域，并且将多个条纹区域中的每一个进一步划分为具有y轴方向宽度的多个主场。将x轴方向和y轴方向上的主场的宽度中的至少一个设定为一个值，并且将基于分割的主场的一个芯片的曝光图案数据作为一个单元存储。存储的曝光图案数据被重复读出与芯片数量相对应的次数，并且每个电子束提供芯片的相同区域的重复曝光。

46. 发明申请

US20060017021A1 Multi-electron beam exposure method and apparatus 有权
公开(公告)号：US20060017021A1
公开(公告)日：2006-01-26
申请号：US11213750
申请日：2005-08-30
申请人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
发明人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
IPC分类号： G21K5/10
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/31764 , H01J2237/31767
摘要： A multi-electron beam exposure method and apparatus, wherein electron beams are applied to a sample surface mounted on a traveling sample stage to perform repeated exposure of chip patterns. An exposure region of the sample surface is partitioned into multiple stripe regions having a width in an x-axis direction, and each of the multiple stripe regions is further partitioned into multiple main fields having a width in a y-axis direction. At least one of the widths of the main fields in the x- and y-axis directions is set to a value, and exposure pattern data for one chip based on the partitioned main fields is stored as a unit. The stored exposure pattern data is readout a number of times corresponding to the number of chips repeatedly, and each electron beam provides repeated exposure of same regions of the chips.

47. 发明授权

US08022365B2 Charged particle beam equipments, and charged particle beam microscope 有权
标题翻译：带电粒子束设备，带电粒子束显微镜
公开(公告)号：US08022365B2
公开(公告)日：2011-09-20
申请号：US12168940
申请日：2008-07-08
申请人： Osamu Kamimura , Hiroya Ohta
发明人： Osamu Kamimura , Hiroya Ohta
IPC分类号： H01J37/28 , H01J3/26
CPC分类号： H01J37/295
摘要： In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength λ of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.
摘要翻译：在应用了相位检索方法的电子显微镜中，允许由照射光束的衍射图案的像素尺寸p，照相机长度L和波长λ确定的图像尺寸与照明具有一定关系标本上的区域。此外，通过照明调整系统设定观察放大图像时的光束照明区域或偏转器的扫描区域，使得当使用放大图像进行相位检索方法时的图像尺寸被允许具有一定关系其中图像尺寸由衍射图案的像素尺寸，相机长度和照明光束的波长确定。因此，衍射图案的信息基本上等于要重构的对象图像。

48. 发明申请

US20100133433A1 ELECTRON BEAM APPARATUS 有权
标题翻译：电子束设备
公开(公告)号：US20100133433A1
公开(公告)日：2010-06-03
申请号：US11958717
申请日：2007-12-18
申请人： Sayaka TANIMOTO , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
发明人： Sayaka TANIMOTO , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
IPC分类号： G01N23/225
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/0435 , H01J2237/2448 , H01J2237/24564 , H01J2237/24592
摘要： A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.
摘要翻译：由单个电子源形成多个主光束，通过至少一个主光束来控制样品的表面电荷，同时使用除此之外的一次光束进行样品的检查。此外，对于用于表面电荷控制的一次光束的曝光区域和用于检查的主光束的曝光区域，单独设置表面电场强度。此外，控制用于表面电荷控制的主光束的电流以及用于表面电荷控制的主光束和用于检查的主光束之间的间隔。

49. 发明申请

US20090014651A1 CHARGED PARTICLE BEAM EQUIPMENTS, AND CHARGED PARTICLE BEAM MICROSCOPE 有权
标题翻译：充电颗粒光束设备和充电颗粒光束显微镜
公开(公告)号：US20090014651A1
公开(公告)日：2009-01-15
申请号：US12168940
申请日：2008-07-08
申请人： Osamu Kamimura , Hiroya Ohta
发明人： Osamu Kamimura , Hiroya Ohta
IPC分类号： H01J37/28
CPC分类号： H01J37/295
摘要： In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength λ of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.
摘要翻译：在应用了相位检索方法的电子显微镜中，由衍射图案的像素尺寸p，照相机长度L和照明光束的波长λ确定的图像尺寸被允许与照明具有一定关系标本上的区域。此外，通过照明调整系统设定观察放大图像时的光束照明区域或偏转器的扫描区域，使得当使用放大图像进行相位检索方法时的图像尺寸被允许具有一定关系其中图像尺寸由衍射图案的像素尺寸，相机长度和照明光束的波长确定。因此，衍射图案的信息基本上等于要重构的对象图像。

50. 发明授权

US07189979B2 Electron gun 有权
标题翻译：电子枪
公开(公告)号：US07189979B2
公开(公告)日：2007-03-13
申请号：US10822720
申请日：2004-04-13
申请人： Masahiko Okunuki , Hiroya Ohta
发明人： Masahiko Okunuki , Hiroya Ohta
IPC分类号： H01J37/07
CPC分类号： H01J37/065
摘要： An electron gun includes a cathode portion which emits electrons, an anode portion which accelerates the emission electrons, a bias portion which is arranged between the cathode portion and the anode portion and controls trajectories of the emission electrons, a shielding portion which is arranged below the anode portion and shields some of the emission electrons, and a cooling portion which cools the shielding portion. The bias portion controls the trajectories of the electrons so as to form a crossover between the bias portion and the anode portion, and prevents the electrons from emitting on the anode portion.
摘要翻译：电子枪包括发射电子的阴极部分，加速发射电子的阳极部分，设置在阴极部分和阳极部分之间的偏置部分，并控制发射电子的轨迹;屏蔽部分布置在阳极部分并屏蔽一些发射电子;以及冷却部分，其冷却屏蔽部分。偏置部分控制电子的轨迹，以在偏压部分和阳极部分之间形成交叉，并防止电子在阳极部分上发射。

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