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41. 发明授权

US08278152B2 Bonding process for CMOS image sensor 有权
标题翻译： CMOS图像传感器的粘合工艺
公开(公告)号：US08278152B2
公开(公告)日：2012-10-02
申请号：US12626296
申请日：2009-11-25
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Chen-Cheng Kuo , Chen-Shien Chen , Shou-Gwo Wuu
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Chen-Cheng Kuo , Chen-Shien Chen , Shou-Gwo Wuu
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/3171 , H01L23/481 , H01L24/12 , H01L27/14618 , H01L27/14683 , H01L2224/05001 , H01L2224/05009 , H01L2224/05548 , H01L2224/0557 , H01L2924/01019 , H01L2924/01068 , H01L2924/01078 , H01L2924/04941 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： The present disclosure provides a method of making an integrated circuit (IC). The method includes forming an electric device on a front side of a substrate; forming a top metal pad on the front side of the substrate, the top metal pad being coupled to the electric device; forming a passivation layer on the front side of the substrate, the top metal pad being embedded in the passivation layer; forming an opening in the passivation layer, exposing the top metal pad; forming a deep trench in the substrate; filling a conductive material in the deep trench and the opening, resulting in a though-wafer via (TWV) feature in the deep trench and a pad-TWV feature in the opening, where the top metal pad being connected to the TWV feature through the pad-TWV feature; and applying a polishing process to remove excessive conductive material, forming a substantially planar surface.
摘要翻译：本公开提供了制造集成电路（IC）的方法。该方法包括在基板的正面上形成电子装置; 在所述基板的前侧形成顶部金属焊盘，所述顶部金属焊盘联接到所述电气装置; 在所述基板的正面上形成钝化层，所述顶部金属焊盘嵌入所述钝化层中; 在钝化层中形成开口，暴露顶部金属垫; 在衬底中形成深沟槽; 在深沟槽和开口中填充导电材料，导致深沟槽中的贯穿晶片通孔（TWV）特征和开口中的焊盘TWV特征，其中顶部金属焊盘通过该沟槽连接到TWV特征 pad-TWV功能; 以及施加抛光工艺以去除过量的导电材料，形成基本平坦的表面。

42. 发明授权

US07994032B2 Method of making deep junction for electrical crosstalk reduction of an image sensor 有权
标题翻译：制造图像传感器电气串扰降低深度方法
公开(公告)号：US07994032B2
公开(公告)日：2011-08-09
申请号：US12845496
申请日：2010-07-28
申请人： Shang-Yi Chiang , Chung Wang , Shou-Gwo Wuu , Dun-Nian Yaung
发明人： Shang-Yi Chiang , Chung Wang , Shou-Gwo Wuu , Dun-Nian Yaung
IPC分类号： H01L21/38
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/14643 , H01L27/14685 , H01L27/148
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括具有前表面和后表面的衬底; 形成在所述基板的前表面上的多个传感器元件，所述多个传感器元件中的每一个被配置为接收朝向所述后表面的光; 以及形成在所述基板中并且水平放置在所述多个传感器元件的两个相邻元件之间并且垂直地位于所述背表面和所述多个传感器元件之间的铝掺杂特征。

43. 发明授权

US07791170B2 Method of making a deep junction for electrical crosstalk reduction of an image sensor 有权
标题翻译：制造图像传感器的电串扰降低的深结的方法
公开(公告)号：US07791170B2
公开(公告)日：2010-09-07
申请号：US11456291
申请日：2006-07-10
申请人： Shang-Yi Chiang , Chung Wang , Shou-Gwo Wuu , Dun-Nian Yaung
发明人： Shang-Yi Chiang , Chung Wang , Shou-Gwo Wuu , Dun-Nian Yaung
IPC分类号： H01L25/065
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/14643 , H01L27/14685 , H01L27/148
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括具有前表面和后表面的衬底; 形成在所述基板的前表面上的多个传感器元件，所述多个传感器元件中的每一个被配置为接收朝向所述后表面的光; 以及形成在所述基板中并且水平放置在所述多个传感器元件的两个相邻元件之间并且垂直地位于所述背表面和所述多个传感器元件之间的铝掺杂特征。

44. 发明申请

US20090146325A1 ALIGNMENT FOR BACKSIDE ILLUMINATION SENSOR 有权
标题翻译：背面照明传感器对准
公开(公告)号：US20090146325A1
公开(公告)日：2009-06-11
申请号：US11951916
申请日：2007-12-06
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Shou-Gwo Wuu
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Shou-Gwo Wuu
IPC分类号： H01L23/544 , H01L21/46
CPC分类号： H01L23/544 , H01L21/71 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An apparatus and manufacturing method thereof, wherein an integrated circuit is located in a first region of a substrate having first and second opposing major surfaces, and wherein an alignment mark is located in a second region of the substrate and extends through the substrate between the first and second surfaces. The alignment mark may protrude from the first and/or second surfaces, and/or may comprise a plurality of substantially similar alignment marks. The second region may interpose the first region and a perimeter of the substrate. The second region may comprise a scribe region.
摘要翻译：一种装置及其制造方法，其中集成电路位于具有第一和第二相对主表面的基板的第一区域中，并且其中对准标记位于所述基板的第二区域中，并且延伸穿过所述基板在所述第一和第二表面。对准标记可以从第一和/或第二表面突出，和/或可以包括多个基本相似的对准标记。第二区域可以插入衬底的第一区域和周边。第二区域可以包括划线区域。

45. 发明申请

US20080198454A1 Color Filter For Image Sensor 有权
标题翻译：图像传感器滤色片
公开(公告)号：US20080198454A1
公开(公告)日：2008-08-21
申请号：US11676388
申请日：2007-02-19
申请人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
发明人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
IPC分类号： G02B5/30
CPC分类号： G02B5/201 , G02B5/223
摘要： An image sensor device includes a semiconductor substrate having a front surface and a back surface, pixels formed on the front surface of the semiconductor substrate, and grid arrays aligned with one of the pixels. One of the grid arrays is configured to allow a wavelength of light to pass through to the corresponding one of the pixels. The grid arrays are disposed overlying the front or back surface of the semiconductor substrate.
摘要翻译：图像传感器装置包括具有前表面和后表面的半导体衬底，形成在半导体衬底的前表面上的像素和与像素之一对准的栅格阵列。网格阵列中的一个被配置为允许光的波长通过到相应的一个像素。栅格阵列设置在半导体衬底的前表面或后表面上。

46. 发明申请

US20060073629A1 Light guide for image sensor 有权
标题翻译：图像传感器光导
公开(公告)号：US20060073629A1
公开(公告)日：2006-04-06
申请号：US11285671
申请日：2005-11-22
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chein-Hsien Tseng
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chein-Hsien Tseng
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L27/14685
摘要： A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The first dielectric layer has a first refractive index. A second dielectric layer is formed overlying the spaces but not the diodes. The second dielectric layer has a second refractive index that is larger than the first refractive index. A new image sensor device is disclosed.
摘要翻译：实现了形成图像传感器装置的新方法。该方法包括在包括在二极管之间具有空间的多个光检测二极管的衬底中形成图像感测阵列。第一介电层形成在二极管上，但不形成空间。第一电介质层具有第一折射率。第二电介质层形成在空间上而不是二极管上。第二电介质层具有大于第一折射率的第二折射率。公开了一种新的图像传感器装置。

47. 发明申请

US20050062118A1 Quantum efficiency enhancement for CMOS imaging sensor with borderless contact 有权
标题翻译：具有无边界接触的CMOS成像传感器的量子效率增强
公开(公告)号：US20050062118A1
公开(公告)日：2005-03-24
申请号：US10669516
申请日：2003-09-24
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L21/00 , H01L21/82 , H01L27/14 , H01L27/146 , H01L29/82 , H01L31/00 , H04N5/335
CPC分类号： H01L31/103 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L31/02161
摘要： The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
摘要翻译：本发明是CMOS图像传感器及其制造方法。本发明提供了一种提高无边界接触CMOS图像传感器的量子效率的有效结构。图像传感器包括覆盖光电二极管区域的无接触接触和介电结构的N阱/ P基板型光电二极管。电介质结构位于光电二极管和层间电介质（ILD）之间，用作无边界接触的缓冲层。制造高性能光电二极管的方法包括在浅沟槽的n阱区域中形成光电二极管，并且在ILD氧化物和具有高于ILD氧化物的折射率的光电二极管之间嵌入电介质材料。

48. 发明授权

US06707080B2 Method for making spectrally efficient photodiode structures for CMOS color imagers 有权
标题翻译： CMOS彩色成像器制作光谱效率高的光电二极管结构的方法
公开(公告)号：US06707080B2
公开(公告)日：2004-03-16
申请号：US10320296
申请日：2002-12-16
申请人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
发明人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
IPC分类号： H01L31062
CPC分类号： H01L27/14645
摘要： A method for making an array of photodiodes with more uniform optical spectral response for the red, green, and blue pixel cells on a CMOS color imager is achieved. After forming a field oxide on a substrate to electrically isolate device areas for CMOS circuits, an array of deep N doped wells is formed for photodiodes for the long wavelength red pixel cells. An array of P doped well regions is formed adjacent to and interlaced with the N doped wells. Shallow diffused N+ regions are formed within the P doped wells for the shorter wavelength green and blue color pixels cells. The shallow diffused photodiodes improve the quantum efficiency (QE), and provide a color imager with improved color fidelity. An insulating layer and appropriate dye materials are deposited and patterned over the photodiodes to provide the array of color pixel cells. The N and P doped wells are also used for the supporting FET CMOS circuits to provide a cost-effective manufacturing process.
摘要翻译：实现了对CMOS彩色成像器上的红色，绿色和蓝色像素单元制造具有更均匀的光谱响应的光电二极管阵列的方法。在衬底上形成场氧化物以电隔离CMOS电路的器件区域后，形成用于长波长红色像素单元的光电二极管的深N掺杂阱的阵列。与N个掺杂的阱相邻并且与其交错形成P掺杂阱区的阵列。在较短波长的绿色和蓝色像素单元的P掺杂阱内形成浅扩散的N +区。浅扩散光电二极管提高了量子效率（QE），并提供了具有改进的色彩保真度的彩色成像仪。在光电二极管上沉积并图案化绝缘层和适当的染料材料以提供彩色像素单元阵列。 N和P掺杂阱也用于支持FET CMOS电路以提供成本有效的制造工艺。

49. 发明授权

US06531752B2 Stripe photodiode element with high quantum efficiency for an image sensor cell 有权
公开(公告)号：US06531752B2
公开(公告)日：2003-03-11
申请号：US09956219
申请日：2001-09-20
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Chien-Hsien Tseng
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Chien-Hsien Tseng
IPC分类号： H01L3106
CPC分类号： H01L31/103 , H01L27/14603 , H01L31/03529 , Y02E10/50
摘要： A method of fabricating a stripe photodiode element, for an image sensor cell, has been developed. The stripe photodiode element is comprised of a narrow width, serpentine shaped, lightly doped N type region, in a P well region. The use of the serpentine shaped region results in increased photon collection area, when compared to counterparts fabricated using non-serpentine shaped patterns. In addition the use of the serpentine shaped N type regions allow both vertical, as well as horizontal depletion regions, to result, thus increasing the quantum efficiency of the photodiode element. The combination of narrow width, and a reduced dopant level, for the N type serpentine shaped region, result in a fully depleted photodiode element.

50. 发明授权

US06518085B1 Method for making spectrally efficient photodiode structures for CMOS color imagers 有权
标题翻译： CMOS彩色成像器制作光谱效率高的光电二极管结构的方法
公开(公告)号：US06518085B1
公开(公告)日：2003-02-11
申请号：US09635584
申请日：2000-08-09
申请人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
发明人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
IPC分类号： H01L2100
CPC分类号： H01L27/14645
摘要： A method for making an array of photodiodes with more uniform optical spectral response for the red, green, and blue pixel cells on a CMOS color imager is achieved. After forming a field oxide on a substrate to electrically isolate device areas for CMOS circuits, an array of deep N doped wells is formed for photodiodes for the long wavelength red pixel cells. An array of P doped well regions is formed adjacent to and interlaced with the N doped wells. Shallow diffused N+ regions are formed within the P doped wells for the shorter wavelength green and blue color pixels cells. The shallow diffused photodiodes improve the quantum efficiency (QE), and provide a color imager with improved color fidelity. An insulating layer and appropriate dye materials are deposited and patterned over the photodiodes to provide the array of color pixel cells. The N and P doped wells are also used for the supporting FET CMOS circuits to provide a cost-effective manufacturing process.
摘要翻译：实现了对CMOS彩色成像器上的红色，绿色和蓝色像素单元制造具有更均匀的光谱响应的光电二极管阵列的方法。在衬底上形成场氧化物以电隔离CMOS电路的器件区域后，形成用于长波长红色像素单元的光电二极管的深N掺杂阱的阵列。与N个掺杂的阱相邻并且与其交错形成P掺杂阱区的阵列。在较短波长的绿色和蓝色像素单元的P掺杂阱内形成浅扩散的N +区。浅扩散光电二极管提高了量子效率（QE），并提供了具有改进的色彩保真度的彩色成像仪。在光电二极管上沉积并图案化绝缘层和适当的染料材料以提供彩色像素单元阵列。 N和P掺杂阱也用于支持FET CMOS电路以提供成本有效的制造工艺。

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