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1. 发明申请

US20070120160A1 Semiconductor Device Having Enhanced Photo Sensitivity and Method for Manufacture Thereof 有权
标题翻译：具有增强光敏性的半导体器件及其制造方法
公开(公告)号：US20070120160A1
公开(公告)日：2007-05-31
申请号：US11627883
申请日：2007-01-26
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
摘要翻译：提供半导体器件及其制造方法。在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。从隔离结构的至少一部分去除第一层。在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。第三折射率基本上类似于第一折射率。

2. 发明申请

US20060148119A1 Quantum efficiency enhancement for CMOS Imaging sensor with borderless contact 有权
标题翻译： CMOS无损触摸传感器的量子效率提升
公开(公告)号：US20060148119A1
公开(公告)日：2006-07-06
申请号：US11360750
申请日：2006-02-23
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L21/00
CPC分类号： H01L31/103 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L31/02161
摘要： The present invention is CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS type photodiode with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
摘要翻译：本发明是CMOS图像传感器及其制造方法。本发明提供了一种提高具有无边界接触的CMOS型光电二极管的量子效率的有效结构。图像传感器包括覆盖光电二极管区域的无接触接触和介电结构的N阱/ P基板型光电二极管。电介质结构位于光电二极管和层间电介质（ILD）之间，用作无边界接触的缓冲层。制造高性能光电二极管的方法包括在浅沟槽的n阱区域中形成光电二极管，并且在ILD氧化物和具有高于ILD氧化物的折射率的光电二极管之间嵌入电介质材料。

3. 发明授权

US06323054B1 Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor 有权
标题翻译：用于CMOS图像传感器的具有高量子效率的横向P-I-N光电二极管元件
公开(公告)号：US06323054B1
公开(公告)日：2001-11-27
申请号：US09583398
申请日：2000-05-31
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Chien-Hsien Tseng , Ching-Chun Wang
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Chien-Hsien Tseng , Ching-Chun Wang
IPC分类号： H01L2100
CPC分类号： H01L27/14609
摘要： A process for fabricating a lateral photodiode element, for an image sensor cell, with an increased depletion region, has been developed. The process features protecting a portion of the semiconductor substrate from ion implantation procedures used to create the P well, and the N well components of the lateral photodiode element. The protected region, or the space between the P well and N well regions, allows a larger depletion region to be realized, when compared to lateral photodiode elements in which the N well and P well regions butt. The space between the P well and N well regions, between about 0.2 to 0.4 um, result in the desired P well—intrinsic or P type semiconductor substrate—N well, (P-I-N), lateral photodiode element.
摘要翻译：已经开发了用于图像传感器单元的具有增加的耗尽区域的横向光电二极管元件的制造方法。该工艺特征是保护半导体衬底的一部分免受用于产生P阱的离子注入工艺和横向光电二极管元件的N阱部件。与N阱和P阱区对接的横向光电二极管元件相比，受保护区域或P阱和N阱区域之间的空间允许实现更大的耗尽区域。在P阱和N阱区之间的间隔在约0.2至0.4μm之间，导致所需的P本征或P型半导体衬底N阱（P-I-N），横向光电二极管元件。

4. 发明授权

US08124495B2 Semiconductor device having enhanced photo sensitivity and method for manufacture thereof 有权
标题翻译：具有增强的光敏度的半导体器件及其制造方法
公开(公告)号：US08124495B2
公开(公告)日：2012-02-28
申请号：US11627883
申请日：2007-01-26
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L21/76
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
摘要翻译：提供半导体器件及其制造方法。在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。从隔离结构的至少一部分去除第一层。在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。第三折射率基本上类似于第一折射率。

5. 发明授权

US08054371B2 Color filter for image sensor 有权
标题翻译：图像传感器滤色片
公开(公告)号：US08054371B2
公开(公告)日：2011-11-08
申请号：US11676388
申请日：2007-02-19
申请人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
发明人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
IPC分类号： H04N5/225 , H04N5/335 , G02B5/30 , H04L31/062
CPC分类号： G02B5/201 , G02B5/223
摘要： An image sensor device includes a semiconductor substrate having a front surface and a back surface, pixels formed on the front surface of the semiconductor substrate, and grid arrays aligned with one of the pixels. One of the grid arrays is configured to allow a wavelength of light to pass through to the corresponding one of the pixels. The grid arrays are disposed overlying the front or back surface of the semiconductor substrate.
摘要翻译：图像传感器装置包括具有前表面和后表面的半导体衬底，形成在半导体衬底的前表面上的像素和与像素之一对准的栅格阵列。网格阵列中的一个被配置为允许光的波长通过到相应的一个像素。栅格阵列设置在半导体衬底的前表面或后表面上。

6. 发明授权

US06642076B1 Asymmetrical reset transistor with double-diffused source for CMOS image sensor 有权
标题翻译： CMOS图像传感器双扩散源非对称复位晶体管
公开(公告)号：US06642076B1
公开(公告)日：2003-11-04
申请号：US10278134
申请日：2002-10-22
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng
IPC分类号： H01L2100
CPC分类号： H01L27/14689 , H01L27/0802 , H01L27/14609 , H01L27/1463
摘要： A new method to form CMOS image sensors in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. Sensor diodes are formed in the semiconductor substrate each comprising a first terminal and a second terminal. Gates are formed for transistors in the CMOS image sensors. The gates comprise a conductor layer overlying the semiconductor substrate with an insulating layer therebetween. The transistors include reset transistors. Ions are implanted into the semiconductor substrate to form source/drain regions for the transistors. The source regions of the reset transistors are formed in the first terminals of the sensor diodes. Ions are implanted into the reset transistor sources to form double diffused sources. The implanting is blocked from other source/drain regions.
摘要翻译：实现了在制造集成电路器件中形成CMOS图像传感器的新方法。该方法包括提供半导体衬底。传感器二极管形成在每个包括第一端子和第二端子的半导体衬底中。为CMOS图像传感器中的晶体管形成栅极。栅极包括覆盖半导体衬底的导体层，其间具有绝缘层。晶体管包括复位晶体管。将离子注入到半导体衬底中以形成用于晶体管的源极/漏极区域。复位晶体管的源极区域形成在传感器二极管的第一端子中。离子被植入到复位晶体管源中以形成双扩散源。植入物从其它源极/漏极区域被阻挡。

7. 发明申请

US20080198454A1 Color Filter For Image Sensor 有权
标题翻译：图像传感器滤色片
公开(公告)号：US20080198454A1
公开(公告)日：2008-08-21
申请号：US11676388
申请日：2007-02-19
申请人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
发明人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
IPC分类号： G02B5/30
CPC分类号： G02B5/201 , G02B5/223
摘要： An image sensor device includes a semiconductor substrate having a front surface and a back surface, pixels formed on the front surface of the semiconductor substrate, and grid arrays aligned with one of the pixels. One of the grid arrays is configured to allow a wavelength of light to pass through to the corresponding one of the pixels. The grid arrays are disposed overlying the front or back surface of the semiconductor substrate.
摘要翻译：图像传感器装置包括具有前表面和后表面的半导体衬底，形成在半导体衬底的前表面上的像素和与像素之一对准的栅格阵列。网格阵列中的一个被配置为允许光的波长通过到相应的一个像素。栅格阵列设置在半导体衬底的前表面或后表面上。

8. 发明申请

US20050062118A1 Quantum efficiency enhancement for CMOS imaging sensor with borderless contact 有权
标题翻译：具有无边界接触的CMOS成像传感器的量子效率增强
公开(公告)号：US20050062118A1
公开(公告)日：2005-03-24
申请号：US10669516
申请日：2003-09-24
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L21/00 , H01L21/82 , H01L27/14 , H01L27/146 , H01L29/82 , H01L31/00 , H04N5/335
CPC分类号： H01L31/103 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L31/02161
摘要： The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
摘要翻译：本发明是CMOS图像传感器及其制造方法。本发明提供了一种提高无边界接触CMOS图像传感器的量子效率的有效结构。图像传感器包括覆盖光电二极管区域的无接触接触和介电结构的N阱/ P基板型光电二极管。电介质结构位于光电二极管和层间电介质（ILD）之间，用作无边界接触的缓冲层。制造高性能光电二极管的方法包括在浅沟槽的n阱区域中形成光电二极管，并且在ILD氧化物和具有高于ILD氧化物的折射率的光电二极管之间嵌入电介质材料。

9. 发明授权

US06707080B2 Method for making spectrally efficient photodiode structures for CMOS color imagers 有权
标题翻译： CMOS彩色成像器制作光谱效率高的光电二极管结构的方法
公开(公告)号：US06707080B2
公开(公告)日：2004-03-16
申请号：US10320296
申请日：2002-12-16
申请人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
发明人： Ching-Chun Wang , Dun-Nian Yaung , Chien-Hsien Tseng , Shou-Gwo Wuu
IPC分类号： H01L31062
CPC分类号： H01L27/14645
摘要： A method for making an array of photodiodes with more uniform optical spectral response for the red, green, and blue pixel cells on a CMOS color imager is achieved. After forming a field oxide on a substrate to electrically isolate device areas for CMOS circuits, an array of deep N doped wells is formed for photodiodes for the long wavelength red pixel cells. An array of P doped well regions is formed adjacent to and interlaced with the N doped wells. Shallow diffused N+ regions are formed within the P doped wells for the shorter wavelength green and blue color pixels cells. The shallow diffused photodiodes improve the quantum efficiency (QE), and provide a color imager with improved color fidelity. An insulating layer and appropriate dye materials are deposited and patterned over the photodiodes to provide the array of color pixel cells. The N and P doped wells are also used for the supporting FET CMOS circuits to provide a cost-effective manufacturing process.
摘要翻译：实现了对CMOS彩色成像器上的红色，绿色和蓝色像素单元制造具有更均匀的光谱响应的光电二极管阵列的方法。在衬底上形成场氧化物以电隔离CMOS电路的器件区域后，形成用于长波长红色像素单元的光电二极管的深N掺杂阱的阵列。与N个掺杂的阱相邻并且与其交错形成P掺杂阱区的阵列。在较短波长的绿色和蓝色像素单元的P掺杂阱内形成浅扩散的N +区。浅扩散光电二极管提高了量子效率（QE），并提供了具有改进的色彩保真度的彩色成像仪。在光电二极管上沉积并图案化绝缘层和适当的染料材料以提供彩色像素单元阵列。 N和P掺杂阱也用于支持FET CMOS电路以提供成本有效的制造工艺。

10. 发明授权

US06531752B2 Stripe photodiode element with high quantum efficiency for an image sensor cell 有权
公开(公告)号：US06531752B2
公开(公告)日：2003-03-11
申请号：US09956219
申请日：2001-09-20
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Chien-Hsien Tseng
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Chien-Hsien Tseng
IPC分类号： H01L3106
CPC分类号： H01L31/103 , H01L27/14603 , H01L31/03529 , Y02E10/50
摘要： A method of fabricating a stripe photodiode element, for an image sensor cell, has been developed. The stripe photodiode element is comprised of a narrow width, serpentine shaped, lightly doped N type region, in a P well region. The use of the serpentine shaped region results in increased photon collection area, when compared to counterparts fabricated using non-serpentine shaped patterns. In addition the use of the serpentine shaped N type regions allow both vertical, as well as horizontal depletion regions, to result, thus increasing the quantum efficiency of the photodiode element. The combination of narrow width, and a reduced dopant level, for the N type serpentine shaped region, result in a fully depleted photodiode element.

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