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41. 发明授权

US06506687B1 Dry etching device and method of producing semiconductor devices 失效
标题翻译：干蚀刻装置及半导体装置的制造方法
公开(公告)号：US06506687B1
公开(公告)日：2003-01-14
申请号：US09720080
申请日：2000-12-20
申请人： Masaru Izawa , Shinichi Tachi
发明人： Masaru Izawa , Shinichi Tachi
IPC分类号： H01L2100
CPC分类号： H01L21/32136 , H01J37/32082 , H01J37/3244 , H01L21/32137 , H01L21/76816 , H01L21/76838 , Y10S156/915
摘要： A technique of dry etching the surface of a wafer by using a dry etching apparatus in which the distance between a wafer and a surface facing the wafer is set to the half or less of the diameter of the wafer is disclosed. Even in the case of using, especially, a wafer having a large diameter, the incident amount of etching reaction by-products in the peripheral portion of the wafer and that in the center portion of the wafer are uniformed. Thus, a uniform etching process over the whole surface of the wafer can be realized.
摘要翻译：公开了通过使用其中将晶片和面对晶片的表面之间的距离设置为晶片直径的一半或更小的干蚀刻装置来干蚀刻晶片表面的技术。即使在特别使用具有大直径的晶片的情况下，晶片的周边部分中的蚀刻反应副产物的入射量和晶片的中心部分的入射量均匀。因此，可以实现在晶片的整个表面上的均匀蚀刻工艺。

42. 发明授权

US06197151B1 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06197151B1
公开(公告)日：2001-03-06
申请号：US09564788
申请日：2000-05-05
申请人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
发明人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
IPC分类号： H05H100
CPC分类号： H01J37/32082 , H01J37/32678
摘要： A plasma processing apparatus comprising a vacuum processing chamber, a plasma generating means including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and a evacuating means for evacuating the vacuum processing chamber, which further comprises a high frequency electric power source for applying an electric power of a VHF band from 50 MHz to 200 MHz between the pair of electrodes; and a magnetic field forming means for forming a static magnetic field or a low frequency magnetic field larger than 10 gausses and smaller than 110 gausses in a direction intersecting an electric field generated between the pair of electrodes and the vicinity by the high frequency electric power source; therein the magnetic field forming means being set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position in the opposite side of the sample table from the middle of the both electrodes; an electron cyclotron resonance region being formed between the both electrodes by the magnetic field and the electric field.
摘要翻译：一种等离子体处理装置，包括真空处理室，包括一对电极的等离子体产生装置，用于在真空处理室内安装待处理样品并且还用作其中一个电极的样品台，以及用于抽真空的抽空装置所述真空处理室还包括用于在所述一对电极之间施加50MHz至200MHz的VHF频带的电力的高频电源; 以及磁场形成装置，用于在与所述一对电极之间产生的电场和由所述高频电源附近产生的电场的方向上形成大于10高斯并且小于110高斯的静态磁场或低频磁场 ; 其中，磁场形成装置被设置成使得沿着样品台的表面的方向上的磁场分量变得最大的部分被带到样品台的与两者的中间相反的一侧的位置电极通过磁场和电场在两个电极之间形成电子回旋共振区域。

43. 发明授权

US6129806A Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US6129806A
公开(公告)日：2000-10-10
申请号：US808805
申请日：1997-02-28
申请人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
发明人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
IPC分类号： H01J37/32 , H05H1/46 , C23F4/00
CPC分类号： H01J37/32082 , H01J37/32678
摘要： A plasma processing apparatus and method are provided which are capable of easily performing precise working of a fine pattern on a large sized sample having a diameter of 300 mm or larger, and also capable of improving selectivity during micro processing. The apparatus includes a vacuum processing chamber, a plasma generating arrangement including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and an evacuating means for evacuating the vacuum processing chamber. The apparatus further includes a high frequency electric power source for applying an electric power of VHF band from 50 MHz to 200 MHz between the pair of electrodes. A magnetic field forming structure is also provided for forming a static magnetic field or a low frequency magnetic field larger than 10 gauss and smaller than 110 gauss in a direction intersecting an electric field generated between the pair of electrodes and in the vicinity thereof by the high frequency electric power source. The magnetic field forming structure is set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position on the opposite side of the sample table from the middle of the two electrodes. As a result, an electron cyclotron resonance region is formed between the upper and lower electrodes by the magnetic field and the electric field.
摘要翻译：提供一种等离子体处理装置和方法，其能够容易地对直径为300mm以上的大尺寸样品进行精细图案的精确加工，并且还能够提高微加工期间的选择性。该装置包括真空处理室，包括一对电极的等离子体产生装置，用于在真空处理室内安装待处理样品并且还用作其中一个电极的样品台，以及抽真空装置处理室。该装置还包括用于在一对电极之间施加50MHz至200MHz的VHF频带的电力的高频电源。还提供了一种磁场形成结构，用于在与一对电极之间产生的电场相交的方向上形成大于10高斯并且小于110高斯的静态磁场或低频磁场，并且在其附近形成高频率电源。磁场形成结构被设定为使得沿着样品台的表面的方向上的磁场分量变得最大的部分被带到样品台的与两个电极的中间相反的一侧的位置。结果，通过磁场和电场在上电极和下电极之间形成电子回旋共振区域。

44. 发明授权

US5343353A Semiconductor device and process of producing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5343353A
公开(公告)日：1994-08-30
申请号：US929918
申请日：1992-08-17
申请人： Hiroshi Miki , Yuzuru Ohji , Shinichi Tachi , Keiichi Kanehori
发明人： Hiroshi Miki , Yuzuru Ohji , Shinichi Tachi , Keiichi Kanehori
IPC分类号： H01L27/10 , C23C16/40 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01G4/10 , B05D5/12 , H01G7/00
CPC分类号： H01L28/56 , C23C16/409 , H01L21/31691 , Y10T29/435
摘要： A microminiature, large capacitor for a semiconductor memory is formed from a raw material compound of plural different kinds of metal atoms for deposition, irrespective of the material, temperature and surface condition of a substrate, thereby forming a thin dielectric film having uniform characteristics not affected by the interface even though the film is made as thin as approximately 0.1 .mu.m. The microminiature large capacitance capacitor has a capacitance unaffected by an oxide existing at the interface between a ferroelectric and electrodes without using precious metals such as platinum having the least degree of freedom in deposition of thin films and microminiature processing. The ferroelectric thin film is deposited using an organic metal comprising a plurality of kinds of metal elements in conformity with the composition of a desired dielectric. As electrodes for use in forming a capacitor, a substance exhibiting conductivity after oxidation is preferably employed.
摘要翻译：用于半导体存储器的微型大电容器由用于沉积的多种不同种类的金属原子的原料化合物形成，与基板的材料，温度和表面状况无关，从而形成具有不受影响的均匀特性的薄电介质膜通过界面即使薄膜制成薄约0.1μm。微型大容量电容器具有不受在铁电体和电极之间的界面处存在的氧化物的影响，而不使用贵金属如铂，其沉积薄膜和微型加工具有最小的自由度。使用包含多种金属元素的有机金属，使其与所需电介质的组成一致地沉积铁电薄膜。作为用于形成电容器的电极，优选使用氧化后显示导电性的物质。

45. 发明申请

US20060144518A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060144518A1
公开(公告)日：2006-07-06
申请号：US11366621
申请日：2006-03-03
申请人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
发明人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32678 , H01L21/67069
摘要： A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma
摘要翻译：等离子体处理装置包括具有一对用于等离子体产生的相对电极的真空处理室，一个用作用于包括绝缘膜的样品的样品台的电极。在样品台电极处设置静电吸附膜，以在膜和样品后表面之间提供导热气体。还提供减压元件。此外，提供了将所述真空处理室内的气体压力设定为0.5〜4.0Pa并在电极之间施加30MHz〜200MHz的高频功率的结构。电极盖设置在另一个电极处，电极间的间隙为30mm至100mm。电极盖包括用于引入含氟蚀刻气体的细孔，并且电源加速等离子体中的离子

46. 发明授权

US06629538B2 Method for cleaning semiconductor wafers in a vacuum environment 有权
标题翻译：在真空环境中清洁半导体晶片的方法
公开(公告)号：US06629538B2
公开(公告)日：2003-10-07
申请号：US09811652
申请日：2001-03-20
申请人： Kenetsu Yokogawa , Yoshinori Momonoi , Masaru Izawa , Shinichi Tachi
发明人： Kenetsu Yokogawa , Yoshinori Momonoi , Masaru Izawa , Shinichi Tachi
IPC分类号： B08B600
CPC分类号： H01L21/02046 , B08B1/00 , B08B1/04 , B08B5/02 , B08B7/0035 , H01L21/67028
摘要： A method of dry cleaning surfaces of a semiconductor wafer includes the steps of placing a processed wafer in a vacuum environment and positioning a pad near each of a front surface and a back surface of the wafer. Cleaning gas is injected into a small clearance formed between each pad and the front and rear surfaces to generate a high-speed gas flow along the surface of the wafer. Particles left at the surfaces of the processed wafer are physically cleaned and removed with the high-speed gas flow. In order to assist this physical cleaning action, it is also possible to apply either a chemical cleaning method or an electrical cleaning method under application of plasma.
摘要翻译：半导体晶片的干式清洗表面的方法包括以下步骤：将处理的晶片放置在真空环境中并将衬垫定位在晶片的前表面和后表面中的每一个周围。将清洁气体注入到每个垫与前表面和后表面之间形成的小间隙中，以产生沿着晶片表面的高速气流。留在处理过的晶片表面的颗粒被物理清洗并用高速气流除去。为了辅助这种物理清洁动作，也可以在施加等离子体的情况下应用化学清洗方法或电气清洁方法。

47. 发明授权

US06573190B1 Dry etching device and dry etching method 失效
标题翻译：干蚀刻装置和干法蚀刻法
公开(公告)号：US06573190B1
公开(公告)日：2003-06-03
申请号：US09856264
申请日：2001-05-18
申请人： Masaru Izawa , Shinichi Tachi , Kenetsu Yokogawa , Nobuyuki Negishi , Naoyuki Kofuji
发明人： Masaru Izawa , Shinichi Tachi , Kenetsu Yokogawa , Nobuyuki Negishi , Naoyuki Kofuji
IPC分类号： H01L2100
CPC分类号： H01L21/32136 , H01J37/321 , H01J37/3266 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device. The apparatus and method enables a magnitude of a magnetic field to be cyclically modulated when a substrate to be treated is etch processed. The cyclical modulation may be effected by cyclically modulating a coil current flowing to a solenoid coil.
摘要翻译：可以在宽范围内均匀稳定地产生高密度等离子体的干蚀刻装置和方法，并且可以应对晶片直径的增加，并使得图案在半导体器件的精细图案的蚀刻处理中更细。当要处理的衬底被蚀刻处理时，该装置和方法使得可以循环调制磁场的大小。循环调制可以通过循环调制流向螺线管线圈的线圈电流来实现。

48. 发明授权

US06475918B1 Plasma treatment apparatus and plasma treatment method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06475918B1
公开(公告)日：2002-11-05
申请号：US09679348
申请日：2000-10-05
申请人： Masaru Izawa , Kenetsu Yokogawa , Nobuyuki Negishi , Yoshinori Momonoi , Shinichi Tachi
发明人： Masaru Izawa , Kenetsu Yokogawa , Nobuyuki Negishi , Yoshinori Momonoi , Shinichi Tachi
IPC分类号： H01L2100
CPC分类号： H01J37/32678 , H01J37/32422 , H01L21/67069 , H01L21/76802
摘要： An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O, F or N radicals, gas flow rate or consumption amount of O, F and N on the inner wall surface with etching time to suppress excessive O, F and N which become excessive in the initial stage of etching, the method also including control for the flow rate or the consumption amount based on the result of measurement for plasmas during etching so as to obtain a stable etching shape. Since bowing can be reduced upon fabrication of insulation film hole and insulation film while maintaining the etching rate and the selectivity, finer semiconductor device can be produced easily.
摘要翻译：一种蚀刻方法，其能够在制造半导体时获得精细的制造形状，特别是制造绝缘膜时的垂直制造形状，该方法包括控制O，F或N自由基的入射量，气体流速或用蚀刻时间对内壁表面的O，F和N的消耗量进行蚀刻，以抑制在蚀刻的初始阶段过度的过量的O，F和N，该方法还包括基于流量或消耗量的控制在蚀刻期间等离子体的测量结果，以获得稳定的蚀刻形状。由于在保持蚀刻速率和选择性的同时，在制造绝缘膜孔和绝缘膜时可以减少弯曲，因此可以容易地制造更细的半导体器件。

49. 发明授权

US4406733A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US4406733A
公开(公告)日：1983-09-27
申请号：US451956
申请日：1982-12-21
申请人： Shinichi Tachi
发明人： Shinichi Tachi
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/306
CPC分类号： H01L21/3065 , H01L21/02019
摘要： In a dry etching method of etching Si, PF.sub.5 -gas is used as a source gas for plasma etching and reactive ion beam etching. The substrate can be etched at a higher rate as compared with the plasma etching in which CF.sub.4 -gas is used as the source gas.
摘要翻译：在蚀刻Si的干蚀刻方法中，使用PF 5气体作为等离子体蚀刻和反应离子束蚀刻的源气体。与其中使用CF 4气体作为源气体的等离子体蚀刻相比，可以以更高的速率蚀刻衬底。

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