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41. 发明申请

US20110224304A1 BIPHENYLACETAMIDE DERIVATIVE 审中-公开
标题翻译：联苯酰胺衍生物
公开(公告)号：US20110224304A1
公开(公告)日：2011-09-15
申请号：US13129394
申请日：2009-11-13
申请人： Seiji Iwama , Tomoyuki Tanaka , Nana Najima
发明人： Seiji Iwama , Tomoyuki Tanaka , Nana Najima
IPC分类号： A61K31/165 , C07C233/05 , A61P25/08 , A61P25/00
CPC分类号： C07C235/34 , C07C233/11 , C07C255/57 , C07C317/44 , C07C323/62 , C07C2601/02
摘要： The present invention provides a compound of formula (I) or a salt thereof, wherein R1, R2 and R3 are independently selected from the group consisting of hydrogen atom, fluorine atom, chlorine atom, bromine atom, C1-6 alkyl, C1-6 alkoxy substituted with fluorine atom, and others; R4 and R5 are independently selected from the group consisting of hydrogen atom, fluorine atom, chlorine atom, C1-6 alkyl, C1-6 alkoxy substituted with fluorine atom, and others; R6 and R7 are independently selected from the group consisting of hydrogen atom, fluorine atom, methyl, ethyl, hydroxy group, and others; and R8 and R9 are independently selected from the group consisting of hydrogen atom, C1-6 alkyl, and others, which is useful as an agent for treating or preventing various types of epilepsy including partial seizures and/or generalized seizures.
摘要翻译：本发明提供式（I）化合物或其盐，其中R 1，R 2和R 3独立地选自氢原子，氟原子，氯原子，溴原子，C 1-6烷基，C 1-6 氟原子取代的烷氧基等; R4和R5独立地选自氢原子，氟原子，氯原子，C1-6烷基，被氟原子取代的C1-6烷氧基等; R6和R7独立地选自氢原子，氟原子，甲基，乙基，羟基等; R8和R9独立地选自氢原子，C1-6烷基等，其可用作治疗或预防各种类型癫痫的药物，包括部分发作和/或全身性发作。

42. 发明授权

US07084049B2 Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate 有权
标题翻译：埋层绝缘层型半导体碳化硅基板的制造方法
公开(公告)号：US07084049B2
公开(公告)日：2006-08-01
申请号：US10351385
申请日：2003-01-27
申请人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Seisaku Hirai , Fumihiko Jobe , Tomoyuki Tanaka
发明人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Seisaku Hirai , Fumihiko Jobe , Tomoyuki Tanaka
IPC分类号： H01L21/20 , H01L21/36 , C30B23/00 , C30B25/00 , C30B28/12
CPC分类号： H01L21/7624 , H01L21/02378 , H01L21/02381 , H01L21/02488 , H01L21/02529 , H01L21/02532 , H01L21/02639 , H01L21/02656 , H01L21/0445 , H01L21/7602 , H01L21/76251
摘要： A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.
摘要翻译：掩埋绝缘层型半导体碳化硅衬底的制造方法包括将具有预定厚度的表面硅层130和掩埋绝缘体120的SOI衬底100放置在加热炉200中的步骤，同时向加热炉200供给氢气G 1和烃气G 2的混合气体（G 1 + G 2），从而将SOI衬底100的变形表面硅层130 成为单晶碳化硅薄膜140。

43. 发明申请

US20050276800A1 Intrabodies 审中-公开
标题翻译：内部机构
公开(公告)号：US20050276800A1
公开(公告)日：2005-12-15
申请号：US11127932
申请日：2005-05-12
申请人： Terrence Rabbitts , Tomoyuki Tanaka
发明人： Terrence Rabbitts , Tomoyuki Tanaka
IPC分类号： C07K16/32 , G01N33/53 , A61K39/395
CPC分类号： C07K16/32 , A61K2039/505 , C07K2317/622
摘要： The present invention related to antibodies that function within an intracellular environment. In particular the present invention relates to a particular antibody which the inventors have shown to bind to the oncogenic form of RAS. Uses of such an antibody are also described.
摘要翻译：本发明涉及在细胞内环境中起作用的抗体。特别地，本发明涉及本发明人已经显示与RAS的致癌形式结合的特定抗体。还描述了这种抗体的用途。

44. 发明申请

US20050272107A1 Intracellular antibodies 审中-公开
标题翻译：细胞内抗体
公开(公告)号：US20050272107A1
公开(公告)日：2005-12-08
申请号：US11127677
申请日：2005-05-12
申请人： Terrence Rabbitts , Tomoyuki Tanaka
发明人： Terrence Rabbitts , Tomoyuki Tanaka
IPC分类号： C07K16/32 , C12N15/13 , G01N33/53 , G01N33/537 , G01N33/543
CPC分类号： C07K16/32 , C07K2317/569 , C07K2317/622 , C07K2319/00
摘要： The invention related to intracellular single domain immunoglobulins, and to a method for determining the ability of an immunoglobulin single domain to bind to a target in an intracellular environment, comprising the steps of: a) providing a first molecule and a second molecule, wherein stable interaction of the first and second molecules leads to the generation of a signal; b) providing a single intracellular immunoglobulin domain which is associated with the first molecule, said single immunoglobulin domain being free of complementary immunoglobulin domains; c) providing an intracellular target which is associated with the second molecule, such that association of the immunoglobulin domain and the target leads to stable interaction of the first and second molecules and generation of the signal; and d) assessing the intracellular interaction between the immunoglobulin domain and the target by monitoring the signal.
摘要翻译：本发明涉及细胞内单结构域免疫球蛋白，以及用于确定免疫球蛋白单结构域在细胞内环境中与靶结合的能力的方法，包括以下步骤：a）提供第一分子和第二分子，其中稳定第一和第二分子的相互作用导致信号的产生; b）提供与第一分子缔合的单个细胞内免疫球蛋白结构域，所述单个免疫球蛋白结构域不含互补免疫球蛋白结构域; c）提供与第二分子缔合的细胞内靶，使得免疫球蛋白结构域和靶标的结合导致第一和第二分子的稳定相互作用以及信号的产生; 和d）通过监测信号来评估免疫球蛋白结构域和靶标之间的细胞内相互作用。

45. 发明授权

US5417312A Semiconductor acceleration sensor and vehicle control system using the same 失效
标题翻译：半导体加速度传感器和车辆控制系统使用相同
公开(公告)号：US5417312A
公开(公告)日：1995-05-23
申请号：US147083
申请日：1993-11-03
申请人： Shigeki Tsuchitani , Seiko Suzuki , Tomoyuki Tanaka , Masayuki Miki , Masahiro Matsumoto , Norio Ichikawa , Hiromichi Ebine , Yukiko Sugisawa , Kanemasa Sato , Sadayasu Ueno , Yasuhiro Asano , Masanori Kubota , Masayoshi Suzuki
发明人： Shigeki Tsuchitani , Seiko Suzuki , Tomoyuki Tanaka , Masayuki Miki , Masahiro Matsumoto , Norio Ichikawa , Hiromichi Ebine , Yukiko Sugisawa , Kanemasa Sato , Sadayasu Ueno , Yasuhiro Asano , Masanori Kubota , Masayoshi Suzuki
IPC分类号： G01P1/00 , G01P15/125 , G01P15/13 , B60T8/58 , B60T8/72 , G01P15/08
CPC分类号： G01P15/125 , G01P1/003 , G01P15/131 , G01P2015/0828
摘要： A semiconductor acceleration sensor is formed by a cantilever having a conductive movable electrode of predetermined mass at one end, at least one pair of fixed conductive electrodes which are stationary with respect to the movable electrode located on opposing sides of the movable electrode, and gaps provided between the movable electrode and the fixed electrodes. To prevent the movable electrode becoming fused to the contacted fixed electrode, in a first aspect of this invention, an insulating layer is provided between the movable electrode and fixed electrodes, the layer being either on the movable electrode or on the fixed electrodes and in a second aspect the movable electrode or, preferably, the fixed electrodes, are formed of a high melting point material. In such a second aspect, to improve adhesion between the high melting point material and a substrate to which the fixed electrodes are mounted, a lower melting point material is firstly coated on the substrates. A sensor detector unit processing circuit has the output characteristic of the circuit digitally adjusted by suitable switching of a plurality of resistors, and the sensor chip and the detector unit integrated circuit may be located on a common base and mounted in a hermetically sealed chamber to prevent adverse environmental effects affecting operation of the sensor and detector unit assembly. A gas having a dew point of -40.degree. C. or lower is, advantageously, charged into the hermetically sealed chamber.
摘要翻译：半导体加速度传感器由具有在一端具有预定质量的导电可移动电极的悬臂形成，相对于位于可动电极的相对侧上的可动电极固定的至少一对固定导电电极和提供的间隙在可动电极和固定电极之间。为了防止可动电极与被接触的固定电极熔合，在本发明的第一方面中，在可动电极和固定电极之间设置绝缘层，该层位于可动电极上或固定电极上，第二方面，可动电极或优选固定电极由高熔点材料形成。在这样的第二方面，为了提高高熔点材料与安装有固定电极的基板之间的粘附性，首先在基板上涂覆较低熔点的材料。传感器检测器单元处理电路具有通过多个电阻器的合适切换数字调节的电路的输出特性，并且传感器芯片和检测器单元集成电路可以位于公共基座上并且安装在气密密封的室中以防止影响传感器和检测器单元组件运行的不利环境影响。露点为-40℃或更低的气体有利地被装入密封的气室中。

46. 发明授权

US5179034A Method for fabricating insulated gate semiconductor device 失效
标题翻译：绝缘栅半导体器件的制造方法
公开(公告)号：US5179034A
公开(公告)日：1993-01-12
申请号：US683695
申请日：1991-04-11
申请人： Mutsuhiro Mori , Tomoyuki Tanaka , Yasumichi Yasuda , Yasunori Nakano
发明人： Mutsuhiro Mori , Tomoyuki Tanaka , Yasumichi Yasuda , Yasunori Nakano
IPC分类号： H01L21/225 , H01L21/331 , H01L21/336 , H01L29/739 , H01L29/78
CPC分类号： H01L29/66333 , H01L21/2257 , H01L29/66712 , H01L29/7395 , H01L29/7802 , Y10S148/126
摘要： A method for fabricating an insulated gate semiconductor device comprises the steps of forming insulated gates on an n.sup.- -layer surface, forming p-well layers in the n.sup.- -layer using the insulated gates as masks, forming phosphosilicate glass layers on the side walls of the insulated gates and diffusing the impurities from the phosphosilicate glass layers into the p-well layers to form n.sup.30 -source layer.
摘要翻译：一种用于制造绝缘栅半导体器件的方法包括以下步骤：在n层表面上形成绝缘栅极，使用绝缘浇口作为掩模在n层中形成p阱层，在侧壁上形成磷硅玻璃层的绝缘栅极，并将杂质从磷硅玻璃层扩散到p阱层中以形成n30源层。

47. 发明授权

US5032532A Method for fabricating insulated gate semiconductor device 失效
标题翻译：绝缘栅半导体器件的制造方法
公开(公告)号：US5032532A
公开(公告)日：1991-07-16
申请号：US233007
申请日：1988-08-17
申请人： Mutsuhiro Mori , Tomoyuki Tanaka , Yasumichi Yasuda , Yasunori Nakano
发明人： Mutsuhiro Mori , Tomoyuki Tanaka , Yasumichi Yasuda , Yasunori Nakano
IPC分类号： H01L29/68 , H01L21/225 , H01L21/331 , H01L21/336 , H01L29/739 , H01L29/78
CPC分类号： H01L29/66333 , H01L21/2257 , H01L29/66712 , H01L29/7395 , H01L29/7802 , Y10S148/126
摘要： A method for fabricating an insulated gate semiconductor device comprises the steps of forming insulated gates on an n.sup.- -layer surface, forming p-well layers in the n.sup.- -layer using the insulated gates as masks, forming phosphosilicate glass layers on the side walls of the insulated gates and diffusing the impurities from the phosphosilicate glass layers into the p-well layers to form n.sup.+ -source layer.

48. 发明授权

US4089024A Semiconductor switching device 失效
标题翻译：半导体开关装置
公开(公告)号：US4089024A
公开(公告)日：1978-05-09
申请号：US640714
申请日：1975-12-15
申请人： Tomoyuki Tanaka
发明人： Tomoyuki Tanaka
IPC分类号： H01L29/08 , H01L29/417 , H01L29/747 , H01L29/74
CPC分类号： H01L29/0834 , H01L29/41716 , H01L29/747
摘要： A semiconductor switching device including at least three PN junctions and a control electrode formed on a portion of the surface of one outermost layer out of the layers constituting said PN junctions, wherein, in order to positively ensure that it turns off, the forward voltage drop across a current path including a portion of the outermost layer near the control electrode is made greater than that across the main current path.
摘要翻译：一种半导体开关器件，包括至少三个PN结和形成在构成所述PN结的层中的一个最外层的表面的一部分上的控制电极，其中为了确保其关闭，正向压降横跨包括控制电极附近的最外层的一部分的电流路径被制成大于跨越主电流路径的电流路径。

49. 发明申请

US20130322999A1 CONSTRUCTION MACHINE 有权
标题翻译：建筑机械
公开(公告)号：US20130322999A1
公开(公告)日：2013-12-05
申请号：US13991292
申请日：2012-02-08
申请人： Shogo Kimura , Tomoyuki Tanaka
发明人： Shogo Kimura , Tomoyuki Tanaka
IPC分类号： E02F9/16 , E02F3/30
CPC分类号： E02F9/163 , B60J5/0487 , B62D33/0617 , E02F3/30 , E02F3/325
摘要： A cab (8) is provided with a cab box (13) in which a space between each of pillars (14 to 18) is covered by each of surfaces (13A to 13F) and the inside becomes an operator's room (13G) and a door (24) mounted on the left intermediate pillar (16). On a rear surface portion (14D) of the left front pillar (14), a protruding portion (23A1) of a mounting plate (23A) is provided in a state protruding to the door (24) side. On a mounting opening (24E) on the inner surface side of the door (24), a door holding member (28) engaged with an engaging member (23) and holding the door (24) at a closed position is provided. On the door (24), a retreating recessed portion (29) for avoiding interference with the protruding portion (23A1) of the mounting plate (23A) is provided on the front side from the door holding member (28).
摘要翻译：驾驶室（8）设置有驾驶室箱（13），每个支柱（14至18）之间的空间被每个表面（13A至13F）覆盖，内部成为操作室（13G），并且门（24）安装在左中间支柱（16）上。在左前柱（14）的后表面部分（14D）上，以突出到门（24）侧的状态设置安装板（23A）的突出部分（23A1）。在门（24）的内表面侧的安装开口（24E）上设置有与接合构件（23）接合并将门（24）保持在关闭位置的门保持构件（28）。在门（24）上，从门保持构件（28）的前侧设置有用于避免与安装板（23A）的突出部（23A1）的干涉的后退凹部（29）。

50. 发明申请

US20130285413A1 CONSTRUCTION MACHINE 有权
标题翻译：建筑机械
公开(公告)号：US20130285413A1
公开(公告)日：2013-10-31
申请号：US13990611
申请日：2012-01-06
申请人： Naoki Takeoka , Tomoyuki Tanaka , Shogo Kimura
发明人： Naoki Takeoka , Tomoyuki Tanaka , Shogo Kimura
IPC分类号： E02F9/16 , B62D33/06
CPC分类号： B62D33/0625 , B62D25/07 , B62D33/0617 , B62D33/0633 , E02F3/325 , E02F9/16
摘要： A canopy (23) is provided to rise in an upper revolving structure (3) for covering an upper side of an operator's seat (19). A bend portion (25B) extending in the left-right direction and projecting upward is provided in a front end side of a roof plate (25) in the canopy (23). A plate-shaped left front lifting bracket (26) is provided in a left front connecting portion (24J), and a plate-shaped right front lifting bracket (27) is provided in a right front connecting portion (24L). The left and right front lifting brackets (26, 27) sandwich the bend portion (25B) from both sides in the left-right direction. Further, the left and right front lifting brackets (26, 27) are provided with lifting holes (26A, 27A) and also discharging notches (26B, 27B).
摘要翻译：设置有用于覆盖操作者座椅（19）的上侧的上部旋转结构（3）的顶盖（23）。在顶盖（23）的顶板（25）的前端侧设置有向左右方向延伸并向上突出的弯曲部（25B）。在左前连接部（24J）中设置有板状的左前提升支架（26），在右前连接部（24L）中设置有板状的右前提升支架（27）。左右前提升支架（26,27）从左右方向的两侧夹着弯曲部（25B）。此外，左右前提升支架（26,27）设置有提升孔（26A，27A），并且还具有排出凹口（26B，27B）。

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