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    • 43. 发明授权
    • Integrating device and integrating method
    • 集成装置和集成方法
    • US06188972B1
    • 2001-02-13
    • US09173169
    • 1998-10-15
    • Masakazu KobayashiYoshihito Nakamura
    • Masakazu KobayashiYoshihito Nakamura
    • G06F1520
    • G01C22/02
    • An integrating device includes: a non-volatile memory for storing a value of an integrated running distance of a vehicle; an arithmetic processor for calculating a new integrated running distance by a signal generated at each predetermined running distance and also by the integrated running distance stored in the non-volatile memory; and a display unit for displaying the integrated running distance. The non-volatile memory stores a positive value lower than a predetermined reference value as an initial value of the integrated running distance, and the arithmetic processing means outputs a value obtained when the predetermined reference value is subtracted from the integrated running distance, to the display means as the integrated running distance in the case where a value of the integrated running distance stored in the non-volatile memory is not less than the predetermined reference value.
    • 集成装置包括:用于存储车辆的综合行驶距离的值的非易失性存储器; 算术处理器,用于通过在每个预定运行距离处产生的信号以及存储在非易失性存储器中的积分运行距离来计算新的集成运行距离; 以及用于显示集成行驶距离的显示单元。 非易失性存储器存储比预定参考值低的积分值作为积分行驶距离的初始值,并且运算处理装置将从预定基准值中减去从积分行驶距离获得的值输出到显示器 在存储在非易失性存储器中的集成行驶距离的值不小于预定参考值的情况下,作为集成行驶距离的装置。
    • 45. 发明授权
    • Thermoelectric conversion module and method of manufacturing the same
    • 热电转换模块及其制造方法
    • US5994637A
    • 1999-11-30
    • US201000
    • 1998-11-30
    • Yuichiro ImanishiMakoto MiyoshiTetsuo WatanabeKeiko KushibikiKazuhiko ShinoharaMasakazu KobayashiKenji Furuya
    • Yuichiro ImanishiMakoto MiyoshiTetsuo WatanabeKeiko KushibikiKazuhiko ShinoharaMasakazu KobayashiKenji Furuya
    • H01L35/16H01L35/32H01L35/34
    • H01L35/32H01L35/34
    • A thermoelectric conversion module having a large capacity and a curved surface is manufactured by immersing a honeycomb structural body having a number of through holes, openings of every other through holes being closed by clogging members, into a semiconductor material melt of one conductivity type to suck the semiconductor material melt into through holes whose openings are not closed, cooling the thus sucked semiconductor material melt to form semiconductor elements of one conductivity type, immersing again the honeycomb structural body after removing said clogging members into a semiconductor material melt of the other conductivity type to suck the semiconductor material melt into the through holes, cooling the thus sucked semiconductor material melt to form semiconductor elements of the other conductivity type, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies, and providing metal electrodes of both surfaces of a thermoelectric conversion module main body such that alternate semiconductor elements of one and the other conductivity types are connected in series.
    • 通过将具有多个通孔的蜂窝结构体浸渍到一个导电类型的半导体材料熔体中,将具有多个通孔的每隔一个通孔的开口浸入到具有一个导电类型的半导体材料熔体中来制造具有大容量和弯曲表面的热电转换模块 半导体材料熔化成开口未闭合的通孔,冷却由此被吸引的半导体材料熔融物形成一种导电类型的半导体元件,在将所述堵塞构件移除到另一种导电类型的半导体材料熔体中之后,再次将蜂窝结构体再次浸没 将半导体材料熔体吸入通孔中,冷却由此吸收的半导体材料熔体形成另一种导电类型的半导体元件,将蜂窝结构体切割成多个热电转换模块主体,并且提供两个表面的金属电极 的热电 c转换模块主体,使得一种和另一种导电类型的交替半导体元件串联连接。
    • 48. 发明授权
    • Thermoelectric conversion module and method of manufacturing the same
    • 热电转换模块及其制造方法
    • US5886291A
    • 1999-03-23
    • US744990
    • 1996-11-07
    • Yuichiro ImanishiMakoto MiyoshiTetsuo WatanabeKeiko KushibikiKazuhiko ShinoharaMasakazu KobayashiKenji Furuya
    • Yuichiro ImanishiMakoto MiyoshiTetsuo WatanabeKeiko KushibikiKazuhiko ShinoharaMasakazu KobayashiKenji Furuya
    • H01L35/16H01L35/32H01L35/34H01L35/28
    • H01L35/32H01L35/34
    • A thermoelectric conversion module having a large capacity and a curved surface is manufactured by immersing a honeycomb structural body having a number of through holes, openings of every other through holes being closed by clogging members, into a semiconductor material melt of one conductivity type to suck the semiconductor material melt into through holes whose openings are not closed, cooling the thus sucked semiconductor material melt to form semiconductor elements of one conductivity type, immersing again the honeycomb structural body after removing the clogging members into a semiconductor material melt of the other conductivity type to suck the semiconductor material melt into the through holes, cooling the thus sucked semiconductor material melt to form semiconductor elements of the other conductivity type, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies, and providing metal electrodes of both surfaces of a thermoelectric conversion module main body such that alternate semiconductor elements of one and the other conductivity types are connected in series.
    • 通过将具有多个通孔的蜂窝结构体浸渍到一个导电类型的半导体材料熔体中,将具有多个通孔的每隔一个通孔的开口浸入到具有一个导电类型的半导体材料熔体中来制造具有大容量和弯曲表面的热电转换模块 半导体材料熔化成开口不闭合的通孔,冷却由此被吸引的半导体材料熔融物形成一种导电类型的半导体元件,在将堵塞件移除到另一种导电类型的半导体材料熔体中之后再次将蜂窝结构体再次浸没 将半导体材料熔体吸入通孔中,冷却由此吸收的半导体材料熔体形成另一种导电类型的半导体元件,将蜂窝结构体切割成多个热电转换模块主体,并且提供两个表面的金属电极 的热电 转换模块主体,使得一种和另一种导电类型的交替半导体元件串联连接。