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1. 发明授权

US06306673B1 Thermoelectric conversion module and method of manufacturing the same 失效
标题翻译：热电转换模块及其制造方法
公开(公告)号：US06306673B1
公开(公告)日：2001-10-23
申请号：US09320461
申请日：1999-05-27
申请人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
发明人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
IPC分类号： H01L2100
CPC分类号： H01L35/325 , H01L35/34
摘要： A thermoelectric conversion module having a large capacity and a curved surface which can be secured to a corresponding curved surface of a base member is manufactured by inserting N type and P type semiconductor strips into through holes formed in a honeycomb structural body, filling spaces between walls defining the through holes and the semiconductor strips with an electrically insulating filler members made of an easily deformable material such as polyimide resin and silicone resin, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies each having a desired surface configuration, and providing metal electrodes on both surfaces of a thermoelectric conversion module main body such that alternate N type and P type semiconductor elements are connected in cascade.
摘要翻译：通过将N型和P型半导体条插入到形成在蜂窝结构体中的通孔中，在壁之间填充空间来制造具有大容量的热电转换模块和可固定到基体的相应弯曲表面的曲面用诸如聚酰亚胺树脂和有机硅树脂的容易变形的材料制成的电绝缘填料构件来限定通孔和半导体条，将蜂窝结构体切割成具有所需表面形状的多个热电转换模块主体，以及在热电转换模块主体的两个表面上提供金属电极，使得交替的N型和P型半导体元件级联连接。

2. 发明授权

US5705434A Method of manufacturing thermoelectric conversion module 失效
标题翻译：制造热电转换模块的方法
公开(公告)号：US5705434A
公开(公告)日：1998-01-06
申请号：US744599
申请日：1996-11-07
申请人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
发明人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
IPC分类号： H01L35/14 , H01L35/32 , H01L35/34 , H01L21/324 , H01L21/477 , H01L35/28
CPC分类号： H01L35/34 , H01L35/325
摘要： A thermoelectric conversion module having a large capacity and a curved surface which can be secured to a corresponding curved surface of a base member is manufactured by inserting N type and P type semiconductor strips into through holes formed in a honeycomb structural body, filling spaces between walls defining the through holes and the semiconductor strips with filler members, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies each having a desired surface configuration, providing metal electrodes on both surfaces of a thermoelectric conversion module main body such that alternate N type and P type semiconductor elements are connected in cascade, and removing the filler members or the honeycomb structural body and filler members.
摘要翻译：通过将N型和P型半导体条插入到形成在蜂窝结构体中的通孔中，在壁之间填充空间来制造具有大容量的热电转换模块和可固定到基体的相应弯曲表面的曲面通过填充部件限定通孔和半导体条，将蜂窝结构体切割成具有所需表面构造的多个热电转换模块主体，在热电转换模块主体的两个表面上设置金属电极，使得N 类型和P型半导体元件级联连接，并且去除填充部件或蜂窝结构体和填充部件。

3. 发明授权

US6005182A Thermoelectric conversion module and method of manufacturing the same 失效
标题翻译：热电转换模块及其制造方法
公开(公告)号：US6005182A
公开(公告)日：1999-12-21
申请号：US080729
申请日：1998-05-21
申请人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
发明人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
IPC分类号： H01L35/14 , H01L35/08 , H01L35/32 , H01L35/34
CPC分类号： H01L35/08 , H01L35/32 , H01L35/34
摘要： A thermoelectric conversion module including a honeycomb structural body 3 made of an electrically insulating material, N type and P type semiconductor elements 1 and 2 inserted into through holes formed in the honeycomb structural body 3, electrically insulating filler members 4 filled in spaces between the semiconductor elements and inner walls of the through holes such that the semiconductor elements are fixed in position within respective through holes, and electrodes 7 connecting end surfaces of the semiconductor elements on polished end surfaces of the honeycomb structural body such that N type and P type semiconductor elements are alternately connected in series. According to the invention, the electrically insulating filler members are made of an inorganic adhesive of alkali metal silicate or sol-gel glass. Since undesired heat dissipation and heat transfer through adjacent semiconductor elements can be prevented and undesired oxidation and dissipation of the semiconductor elements during a usage can be effectively removed, a high output power can be attained stably for a long life time when the thermoelectric conversion module according to the invention is used in an electric power generating system using an exhausted heat. The higher and lower temperature side surfaces of the module can be shaped into any desired configuration.
摘要翻译：包括由电绝缘材料制成的蜂窝结构体3的热电转换模块，插入到形成在蜂窝结构体3中的通孔中的N型和P型半导体元件1和2，填充在半导体元件和内壁，使得半导体元件固定在各个通孔内的适当位置;以及电极7，其将蜂窝结构体的抛光端面上的半导体元件的端面连接成N型和P型半导体元件交替地串联连接。根据本发明，电绝缘填料构件由碱金属硅酸盐或溶胶 - 凝胶玻璃的无机粘合剂制成。由于可以防止不期望的散热和通过相邻的半导体元件的热传递，并且可以有效地去除使用期间的半导体元件的不期望的氧化和耗散，所以当热电转换模块本发明用于使用排热的发电系统。模块的较高和较低温度的侧表面可以成形为任何所需的构造。

4. 发明授权

US5994637A Thermoelectric conversion module and method of manufacturing the same 失效
标题翻译：热电转换模块及其制造方法
公开(公告)号：US5994637A
公开(公告)日：1999-11-30
申请号：US201000
申请日：1998-11-30
申请人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
发明人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
IPC分类号： H01L35/16 , H01L35/32 , H01L35/34
CPC分类号： H01L35/32 , H01L35/34
摘要： A thermoelectric conversion module having a large capacity and a curved surface is manufactured by immersing a honeycomb structural body having a number of through holes, openings of every other through holes being closed by clogging members, into a semiconductor material melt of one conductivity type to suck the semiconductor material melt into through holes whose openings are not closed, cooling the thus sucked semiconductor material melt to form semiconductor elements of one conductivity type, immersing again the honeycomb structural body after removing said clogging members into a semiconductor material melt of the other conductivity type to suck the semiconductor material melt into the through holes, cooling the thus sucked semiconductor material melt to form semiconductor elements of the other conductivity type, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies, and providing metal electrodes of both surfaces of a thermoelectric conversion module main body such that alternate semiconductor elements of one and the other conductivity types are connected in series.
摘要翻译：通过将具有多个通孔的蜂窝结构体浸渍到一个导电类型的半导体材料熔体中，将具有多个通孔的每隔一个通孔的开口浸入到具有一个导电类型的半导体材料熔体中来制造具有大容量和弯曲表面的热电转换模块半导体材料熔化成开口未闭合的通孔，冷却由此被吸引的半导体材料熔融物形成一种导电类型的半导体元件，在将所述堵塞构件移除到另一种导电类型的半导体材料熔体中之后，再次将蜂窝结构体再次浸没将半导体材料熔体吸入通孔中，冷却由此吸收的半导体材料熔体形成另一种导电类型的半导体元件，将蜂窝结构体切割成多个热电转换模块主体，并且提供两个表面的金属电极的热电 c转换模块主体，使得一种和另一种导电类型的交替半导体元件串联连接。

5. 发明授权

US5952728A Thermoelectric conversion module having channels filled with semiconducting material and insulating fillers 失效
标题翻译：具有填充有半导体材料和绝缘填料的通道的热电转换模块
公开(公告)号：US5952728A
公开(公告)日：1999-09-14
申请号：US744600
申请日：1996-11-07
申请人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
发明人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
IPC分类号： F25B21/02 , H01L35/14 , H01L35/32 , H01L35/34 , H01L23/56
CPC分类号： H01L35/325 , H01L35/34
摘要： A thermoelectric conversion module having a large capacity and a curved surface which can be secured to a corresponding curved surface of a base member is manufactured by inserting N type and P type semiconductor strips into through holes formed in a honeycomb structural body, filling spaces between walls defining the through holes and the semiconductor strips with an electrically insulating filler members made of an easily deformable material such as polyimide resin and silicone resin, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies each having a desired surface configuration, and providing metal electrodes on both surfaces of a thermoelectric conversion module main body such that alternate N type and P type semiconductor elements are connected in cascade.
摘要翻译：通过将N型和P型半导体条插入到形成在蜂窝结构体中的通孔中，在壁之间填充空间来制造具有大容量的热电转换模块和可固定到基体的相应弯曲表面的曲面用诸如聚酰亚胺树脂和有机硅树脂的容易变形的材料制成的电绝缘填料构件来限定通孔和半导体条，将蜂窝结构体切割成具有所需表面形状的多个热电转换模块主体，以及在热电转换模块主体的两个表面上提供金属电极，使得交替的N型和P型半导体元件级联连接。

6. 发明授权

US5886291A Thermoelectric conversion module and method of manufacturing the same 失效
标题翻译：热电转换模块及其制造方法
公开(公告)号：US5886291A
公开(公告)日：1999-03-23
申请号：US744990
申请日：1996-11-07
申请人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
发明人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
IPC分类号： H01L35/16 , H01L35/32 , H01L35/34 , H01L35/28
CPC分类号： H01L35/32 , H01L35/34
摘要： A thermoelectric conversion module having a large capacity and a curved surface is manufactured by immersing a honeycomb structural body having a number of through holes, openings of every other through holes being closed by clogging members, into a semiconductor material melt of one conductivity type to suck the semiconductor material melt into through holes whose openings are not closed, cooling the thus sucked semiconductor material melt to form semiconductor elements of one conductivity type, immersing again the honeycomb structural body after removing the clogging members into a semiconductor material melt of the other conductivity type to suck the semiconductor material melt into the through holes, cooling the thus sucked semiconductor material melt to form semiconductor elements of the other conductivity type, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies, and providing metal electrodes of both surfaces of a thermoelectric conversion module main body such that alternate semiconductor elements of one and the other conductivity types are connected in series.
摘要翻译：通过将具有多个通孔的蜂窝结构体浸渍到一个导电类型的半导体材料熔体中，将具有多个通孔的每隔一个通孔的开口浸入到具有一个导电类型的半导体材料熔体中来制造具有大容量和弯曲表面的热电转换模块半导体材料熔化成开口不闭合的通孔，冷却由此被吸引的半导体材料熔融物形成一种导电类型的半导体元件，在将堵塞件移除到另一种导电类型的半导体材料熔体中之后再次将蜂窝结构体再次浸没将半导体材料熔体吸入通孔中，冷却由此吸收的半导体材料熔体形成另一种导电类型的半导体元件，将蜂窝结构体切割成多个热电转换模块主体，并且提供两个表面的金属电极的热电转换模块主体，使得一种和另一种导电类型的交替半导体元件串联连接。

7. 发明授权

US06235981B1 P-type thermoelectric converting substance and method of manufacturing the same 失效
标题翻译： P型热电转换物质及其制造方法
公开(公告)号：US06235981B1
公开(公告)日：2001-05-22
申请号：US09270102
申请日：1999-03-16
申请人： Makoto Miyoshi , Yuichiro Imanishi , Keiko Kushibiki , Masakazu Kobayashi , Kenji Furuya , Kazuhiko Shinohara
发明人： Makoto Miyoshi , Yuichiro Imanishi , Keiko Kushibiki , Masakazu Kobayashi , Kenji Furuya , Kazuhiko Shinohara
IPC分类号： H01L3534
CPC分类号： H01L35/18 , H01L35/22
摘要： A p-type thermoelectric converting substance used as a p-type semiconductor in a thermoelectric converting module consisting essentially of a substance expressed by a chemical formula CoSbxSny or CoSbxGey (2.7 3), and containing a small amount of oxygen z defined by 2(x+y−3)≧z. The amount of oxygen z is preferably limited such that it is not higher than 0.1 molecules per 1 molecule of Co. An alloy ingot consisting essentially of CoSbxSny or CoSbxGey (2.7 3) is ground to obtain a raw material powder. Then, the powder is cast into a mold, and the mold is sintered under a non-oxidizing or reducing atmosphere. The thus obtained substance reveals p-conductivity in a stable manner over a wide temperature range, and has excellent thermoelectric converting properties.
摘要翻译：在热电转换模块中用作p型半导体的p型热电转换物质，其主要由化学式CoSbxSny或CoSbxGey（2.7 3）表示的物质组成），并且含有由2（x + y-3）> = z定义的少量氧z。优选限定氧气的量，使得每1分子公司不超过0.1分子。基本上由CoSbxSny或CoSbxGey（2.7 3）组成的合金锭）粉碎，得到原料粉末。然后将粉末浇注到模具中，并将模具在非氧化或还原气氛下烧结。由此获得的物质在宽的温度范围内以稳定的方式显示出p导电性，并且具有优异的热电转换性能。

8. 发明授权

US5965841A Thermoelectric conversion material and a process for producing the same 失效
标题翻译：热电转换材料及其制造方法
公开(公告)号：US5965841A
公开(公告)日：1999-10-12
申请号：US820023
申请日：1997-03-19
申请人： Yuichiro Imanishi , Makoto Miyoshi , Kazuhiko Shinohara , Masakazu Kobayashi
发明人： Yuichiro Imanishi , Makoto Miyoshi , Kazuhiko Shinohara , Masakazu Kobayashi
IPC分类号： C04B35/00 , C01G51/00 , H01L35/18 , H01L35/20 , H01L35/34
CPC分类号： H01L35/18
摘要： A thermoelectric conversion material includes a sintered body composed mainly of cobalt and antimony, wherein cobalt and antimony as main components form a compound of cubic CoSb.sub.3, a phase composed mainly of an Sb phase is contained as a secondary phase, and a volumetric rate of the phase closed mainly of the Sb phase is less than 10 vol % with respect to 100 vol % of the thermoelectric conversion material.
摘要翻译：热电转换材料包括主要由钴和锑组成的烧结体，其中作为主要成分的钴和锑形成立方体CoSb 3的化合物，主要由Sb相组成的相作为第二相，并且体积比主相Sb相的相位相对于100体积％的热电转换材料小于10体积％。

9. 发明授权

US5912429A High temperature thermoelectric material and its production method 失效
标题翻译：高温热电材料及其制备方法
公开(公告)号：US5912429A
公开(公告)日：1999-06-15
申请号：US820025
申请日：1997-03-19
申请人： Yuichiro Imanishi , Makoto Miyoshi , Kazuhiko Shinohara , Masakazu Kobayashi
发明人： Yuichiro Imanishi , Makoto Miyoshi , Kazuhiko Shinohara , Masakazu Kobayashi
IPC分类号： C22C1/04 , H01L35/18 , H01L35/34 , C22C12/00
CPC分类号： C22C1/04 , C22C1/0491 , H01L35/18
摘要： Thermoelectric material for high temperature use made of a sintered body of a relative density of at least 75% consisting mainly of cobalt antimony compounds having an elemental ratio Sb/(Co+additives)=x of 2.7
摘要翻译：通过一种方法制造的主要由Sb /（Co +添加剂）= x为2.7

10. 发明申请

US20110049570A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，半导体器件及制造用于半导体器件的外延衬底的方法
公开(公告)号：US20110049570A1
公开(公告)日：2011-03-03
申请号：US12853716
申请日：2010-08-10
申请人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
IPC分类号： H01L29/772 , H01L29/201 , H01L29/20 , H01L21/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201
摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.
摘要翻译：提供了能够实现具有优异的欧姆接触特性以及令人满意的器件特性的半导体器件的外延衬底。在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比部分大于除了近表面部分之外的部分的In组成比。

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