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41. 发明授权

US07608490B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07608490B2
公开(公告)日：2009-10-27
申请号：US11440175
申请日：2006-05-25
申请人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1285 , H01L27/1288
摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.
摘要翻译：为了提供具有高操作性能和高可靠性的电路的半导体器件，并且提高了半导体器件的可靠性，从而提高了具有该半导体器件的电子器件的可靠性。上述目的是通过在沿一个方向扫描的同时，通过照射连续波激光束或重复频率为10MHz或更高的脉冲激光束来结合半导体层结晶步骤来实现的; 使用光掩模或包含由衍射光栅图案形成的辅助图案或具有降低光强度功能的半透射膜的吸收体的光刻步骤; 以及对具有低电子温度的高密度等离子体对半导体膜，绝缘膜或导电膜的表面进行氧化，氮化或表面改性的步骤。

42. 发明申请

US20090111236A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 失效
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090111236A1
公开(公告)日：2009-04-30
申请号：US12259833
申请日：2008-10-28
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , Y10S438/977
摘要： An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.
摘要翻译：即使在使用氮化硅膜等作为接合层的情况下，也可以减少基底基板与半导体基板之间的不良接合的发生。另一个目的是提供一种用于制造可以抑制步数增加的SOI衬底的方法。制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。

43. 发明申请

US20090011575A1 Manufacturing method of SOI substrate and manufacturing method of semiconductor device 有权
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US20090011575A1
公开(公告)日：2009-01-08
申请号：US12213271
申请日：2008-06-17
申请人： Akihisa Shimomura , Hideto Ohnuma , Tetsuya Kakehata , Kenichiro Makino
发明人： Akihisa Shimomura , Hideto Ohnuma , Tetsuya Kakehata , Kenichiro Makino
IPC分类号： H01L21/36 , H01L21/425 , H01L21/00
CPC分类号： H01L21/76254
摘要： It is object to provide a manufacturing method of an SOI substrate provided with a single-crystal semiconductor layer, even in the case where a substrate having a low allowable temperature limit, such as a glass substrate, is used and to manufacture a high-performance semiconductor device using such an SOI substrate. Light irradiation is performed on a semiconductor layer which is separated from a semiconductor substrate and bonded to a support substrate having an insulating surface, using light having a wavelength of 365 nm or more and 700 nm or less, and a film thickness d (nm) of the semiconductor layer which is irradiated with the light is made to satisfy d=λ/2n×m±α (nm), when a light wavelength is λ (nm), a refractive index of the semiconductor layer is n, m is a natural number greater than or equal to 1 (m=1, 2, 3, 4, . . . ), and 0≦α≦10 is satisfied.
摘要翻译：目的在于提供一种具有单晶半导体层的SOI衬底的制造方法，即使使用诸如玻璃衬底等具有低允许温度极限的衬底并制造高性能使用这种SOI衬底的半导体器件。使用波长365nm以上且700nm以下的光和膜厚d（nm）在与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层上进行光照射，被照射到半导体层的半导体层的折射率为n时，满足d =λ/ 2n×m±α（nm），当光波长为λ（nm）时，m为自然数大于或等于1（m = 1，2，3，4，...），并且0 <=α<= 10。

44. 发明申请

US20090001452A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090001452A1
公开(公告)日：2009-01-01
申请号：US12213727
申请日：2008-06-24
申请人： Tamae Takano , Tetsuya Kakehata , Shunpei Yamazaki
发明人： Tamae Takano , Tetsuya Kakehata , Shunpei Yamazaki
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L27/1157 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/1214 , H01L27/1251 , H01L27/13 , H01L29/4234 , H01L29/792 , H01L29/7923
摘要： The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.
摘要翻译：本发明提供一种半导体器件及其制造方法，其中在衬底上制造具有不同厚度的栅极绝缘膜的存储晶体管和多个薄膜晶体管。本发明的特征在于存储晶体管与多个薄膜晶体管之间的结构差异。具体地，存储晶体管和多个薄膜晶体管中的一些被设置为具有底栅结构，而另一个薄膜晶体管被设置为具有顶栅结构，这使得能够减小晶体管的特性缺陷并简化其制造工艺。

45. 发明申请

US20080290393A1 Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film 有权
标题翻译：非易失性半导体存储器件及其制造方法，半导体器件及其制造方法以及绝缘膜的制造方法
公开(公告)号：US20080290393A1
公开(公告)日：2008-11-27
申请号：US11802093
申请日：2007-05-18
申请人： Tetsuya Kakehata , Tetsuhiro Tanaka , Yoshinobu Asami
发明人： Tetsuya Kakehata , Tetsuhiro Tanaka , Yoshinobu Asami
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L27/1214 , H01L21/3143 , H01L21/31612 , H01L21/31637 , H01L21/31645 , H01L27/115 , H01L27/11521 , H01L29/4908 , H01L29/66825 , H01L29/78603 , H01L29/7881
摘要： An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×1011 cm−3 or more and the electron temperature is 1.5 eV or less in an atmosphere including oxygen.
摘要翻译：本发明的目的是提供一种制造具有优异膜特性的绝缘膜的技术。具体地，目的在于提供一种制造具有高耐压的致密绝缘膜的技术。此外，目的是提供一种制造具有少量电子阱的绝缘膜的技术。在包含氧的气氛中，在电子密度为1×10 11 cm -3以上，电子温度为1.5eV以下的条件下，使用高频率进行等离子体处理。

46. 发明申请

US20060275710A1 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US20060275710A1
公开(公告)日：2006-12-07
申请号：US11440175
申请日：2006-05-25
申请人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
IPC分类号： G03F7/26
CPC分类号： H01L21/02683 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1285 , H01L27/1288
摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

47. 发明授权

US08828844B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US08828844B2
公开(公告)日：2014-09-09
申请号：US12247487
申请日：2008-10-08
申请人： Hideto Ohnuma , Tetsuya Kakehata , Akihisa Shimomura , Shinya Sasagawa , Motomu Kurata
发明人： Hideto Ohnuma , Tetsuya Kakehata , Akihisa Shimomura , Shinya Sasagawa , Motomu Kurata
IPC分类号： H01L21/46 , H01L21/268 , H01L21/3065 , H01L21/84 , H01L21/02 , H01L21/302 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L21/302 , H01L21/3065 , H01L21/84
摘要： A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer.
摘要翻译：通过源气体的激发产生等离子体并通过从单晶半导体衬底的表面之一添加包含在等离子体中的离子种类而形成损伤区域; 在单晶半导体衬底的另一个表面上形成绝缘层; 支撑衬底牢固地附接到单晶半导体衬底，以便在其间插入绝缘层的单晶半导体衬底; 通过加热单晶半导体衬底，在损伤区域处分离成与单晶半导体层相连的支撑衬底和部分单晶半导体衬底; 在附着于支撑基板的单晶半导体层的表面进行干蚀刻，通过用激光束照射单晶半导体层来使单晶半导体层重结晶，从而熔化至少一部分单晶半导体层。

48. 发明授权

US08823063B2 SOI substrate, method for manufacturing the same, and semiconductor device 有权
标题翻译： SOI衬底，其制造方法和半导体器件
公开(公告)号：US08823063B2
公开(公告)日：2014-09-02
申请号：US13267024
申请日：2011-10-06
申请人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
发明人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
IPC分类号： H01L29/772 , H01L29/04
CPC分类号： H01L21/76254 , H01L21/84
摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.
摘要翻译：提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。提供了使用这种SOI衬底的半导体器件。在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

49. 发明授权

US08581332B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US08581332B2
公开(公告)日：2013-11-12
申请号：US13207450
申请日：2011-08-11
申请人： Tamae Takano , Tetsuya Kakehata , Shunpei Yamazaki
发明人： Tamae Takano , Tetsuya Kakehata , Shunpei Yamazaki
IPC分类号： H01L29/792
CPC分类号： H01L27/1157 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/1214 , H01L27/1251 , H01L27/13 , H01L29/4234 , H01L29/792 , H01L29/7923
摘要： The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.

50. 发明授权

US08034694B2 SOI substrate, method for manufacturing the same, and semiconductor device 有权
标题翻译： SOI衬底，其制造方法和半导体器件
公开(公告)号：US08034694B2
公开(公告)日：2011-10-11
申请号：US12073741
申请日：2008-03-10
申请人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
发明人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
IPC分类号： H01L21/30 , H01L21/46 , H01L21/322
CPC分类号： H01L21/76254 , H01L21/84
摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.
摘要翻译：提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。提供了使用这种SOI衬底的半导体器件。在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

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