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41. 发明授权

US06939725B2 Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film 失效
标题翻译：制造具有TEOS-03薄膜覆盖的电容器的半导体器件的方法
公开(公告)号：US06939725B2
公开(公告)日：2005-09-06
申请号：US10769808
申请日：2004-02-03
申请人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
发明人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
IPC分类号： H01L23/522 , C23C16/40 , H01L21/02 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/822 , H01L21/8234 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/06 , H01L27/105 , H01L27/108 , H01L21/00 , H01L29/76
CPC分类号： H01L28/55 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31612
摘要： A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.
摘要翻译：在半导体衬底上形成包括电容器下电极，高电介质膜的电容器电介质膜或铁电体膜和电容器上电极的电容器。在半导体衬底上形成保护膜以覆盖电容器。具有相对较大含水量的第一TEOS膜通过臭氧浓度相对较低的第一TEOS-O 3 CVD形成在保护膜上。通过第二TEOS-O 3 3在第一TEOS-O 3膜上形成具有相对较小含水量的第二TEOS-O 3膜。臭氧浓度相对较高的CVD。

42. 发明申请

US20050153462A1 Method for fabricating semiconductor device and semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20050153462A1
公开(公告)日：2005-07-14
申请号：US11022973
申请日：2004-12-28
申请人： Hisashi Yano , Shinichiro Hayashi
发明人： Hisashi Yano , Shinichiro Hayashi
IPC分类号： C23C16/40 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3213 , H01L21/00 , H01L21/8242 , H01L21/31 , H01L21/469
CPC分类号： H01L28/40 , C23C16/409 , H01L21/31604 , H01L21/31691 , H01L21/32136 , H01L28/56 , H01L28/60
摘要： As a method for fabricating a semiconductor device, a lower electrode is first formed on a semiconductor substrate and then a first ferroelectric film is formed on the lower electrode by CVD using a first source gas. Thereafter, a second ferroelectric film is formed on the first ferroelectric film by CVD using a second source gas. Subsequently, an upper electrode is formed on the second ferroelectric film. In this method, the concentration of bismuth contained in the first source gas is different from the concentration of bismuth contained in the second source gas.
摘要翻译：作为制造半导体器件的方法，首先在半导体衬底上形成下电极，然后通过使用第一源气体的CVD在下电极上形成第一铁电体膜。此后，通过使用第二源气体的CVD，在第一铁电体膜上形成第二铁电体膜。随后，在第二铁电体膜上形成上电极。在该方法中，第一源气体中所含的铋浓度与第二源气体中所含的铋浓度不同。

43. 发明授权

US06891715B2 Capacitor and method for fabricating the same 失效
标题翻译：电容器及其制造方法
公开(公告)号：US06891715B2
公开(公告)日：2005-05-10
申请号：US10607313
申请日：2003-06-27
申请人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
发明人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
IPC分类号： H01L21/316 , H01L21/02 , H01L21/8246 , H01L27/105 , H01L27/108 , H01G4/06
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/43
摘要： A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.
摘要翻译：在形成在半导体衬底上的层间绝缘膜上形成电容器。电容器包括由铂制成的底部电极，由SrTaBiO（SBT）制成的电容器绝缘膜，其包含例如在晶界，晶格间位置或空穴中吸收钛的钛的元素，以及由铂制成的顶部电极。

44. 发明授权

US06847074B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US06847074B2
公开(公告)日：2005-01-25
申请号：US09785502
申请日：2001-02-20
申请人： Yoshihisa Nagano , Tooru Nasu , Shinichiro Hayashi , Eiji Fujii
发明人： Yoshihisa Nagano , Tooru Nasu , Shinichiro Hayashi , Eiji Fujii
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242 , H01L27/105 , H01L29/72
CPC分类号： H01L28/75 , H01L27/10852 , H01L28/55
摘要： A semiconductor memory device according to the present invention includes a memory cell capacitor for storing data thereon. The capacitor is made up of a first electrode connected to a contact plug, a second electrode and a capacitive insulating film interposed between the first and second electrodes. The first electrode includes a first barrier film in contact with the contact plug and a second barrier film, which is formed on the first barrier film and prevents the diffusion of oxygen. The second barrier film covers the upper and side faces of the first barrier film.
摘要翻译：根据本发明的半导体存储器件包括用于在其上存储数据的存储单元电容器。电容器由连接到第一和第二电极之间的接触插塞，第二电极和电容绝缘膜的第一电极组成。第一电极包括与接触塞接触的第一阻挡膜和形成在第一阻挡膜上并防止氧的扩散的第二阻挡膜。第二阻挡膜覆盖第一阻挡膜的上表面和侧面。

45. 发明申请

US20050006685A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050006685A1
公开(公告)日：2005-01-13
申请号：US10885707
申请日：2004-07-08
申请人： Shinya Natsume , Shinichiro Hayashi
发明人： Shinya Natsume , Shinichiro Hayashi
IPC分类号： H01L27/108 , H01L21/02 , H01L21/316 , H01L21/8242 , H01L27/105 , H01L21/8249 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/65 , H01L21/31637 , H01L27/10814 , H01L27/10855 , H01L27/10885 , H01L28/90
摘要： A semiconductor device has a capacitive element comprising a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.
摘要翻译：半导体器件具有电容元件，该电容元件包括形成在基板上形成绝缘膜的开口的底部和壁表面上的第一导电膜，形成在第一导电膜上的电介质膜，以及形成在电介质上的第二导电膜电影。电容元件的电介质膜结晶。第一和第二导电膜由贵金属的氧化物，氮化物或氧氮化物的多晶体制成。

46. 发明授权

US06358758B2 Low imprint ferroelectric material for long retention memory and method of making the same 有权
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US06358758B2
公开(公告)日：2002-03-19
申请号：US09860386
申请日：2001-05-19
申请人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , H01L27/10852
摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.
摘要翻译：用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

47. 发明授权

US06355619B1 Peptide tumor cell growth inhibitors 失效
标题翻译：肽肿瘤细胞生长抑制剂
公开(公告)号：US06355619B1
公开(公告)日：2002-03-12
申请号：US09650438
申请日：2000-08-29
申请人： Edmund J. Miller , Shinichiro Hayashi
发明人： Edmund J. Miller , Shinichiro Hayashi
IPC分类号： A61K3800
CPC分类号： C07K7/06 , A61K38/08 , C07K14/54 , C07K14/5421
摘要： Disclosed are peptide-based compositions and methods for inhibiting and modulating the actions of CXC intercrine molecules. The antileukinate peptides described inhibit IL-8, GRO and MIP2&bgr; binding to neutrophils and neutrophil activation. The peptides are particularly advantageous as they inhibit IL-8-induced enzyme release at a 25 fold lower concentration than is required to inhibit chemotaxis, which makes them ideal for treating various inflammatory diseases and disorders including, amongst others, Adult Respiratory Distress Syndrome (ARDS), cystic fibrosis and chronic bronchitis. The invention further includes methods for inhibiting tumor cell growth by employing selected members of the disclosed group of peptides to inhibit a-chemokine binding to the tumor cell.
摘要翻译：本发明公开了基于肽的组合物和用于抑制和调节CXC胞间分子作用的方法。所述的抗白细胞介素肽抑制IL-8，GRO和MIP2β结合嗜中性粒细胞和嗜中性粒细胞活化。这些肽是特别有利的，因为它们以比抑制趋化性所需的浓度低25倍抑制IL-8诱导的酶释放，这使得它们是治疗各种炎性疾病和病症的理想选择，包括成人呼吸窘迫综合征（ARDS）），囊性纤维化和慢性支气管炎。本发明还包括通过使用所公开的肽组的选定成员来抑制趋化因子与肿瘤细胞的结合来抑制肿瘤细胞生长的方法。

48. 发明授权

US6110889A Peptide tumor cell growth inhibitors 失效
标题翻译：肽肿瘤细胞生长抑制剂
公开(公告)号：US6110889A
公开(公告)日：2000-08-29
申请号：US865472
申请日：1997-05-29
申请人： Edmund J. Miller , Shinichiro Hayashi
发明人： Edmund J. Miller , Shinichiro Hayashi
IPC分类号： A61K38/00 , A61K38/08 , A61P35/00 , C07K7/06 , C07K14/54
CPC分类号： C07K7/06 , A61K38/08 , C07K14/54 , C07K14/5421
摘要： Disclosed are peptide-based compositions and methods for inhibiting and modulating the actions of CXC intercrine molecules. The antileukinate peptides described inhibit IL-8, GRO and MIP2.beta. binding to neutrophils and neutrophil activation. The peptides are particularly advantageous as they inhibit IL-8-induced enzyme release at a 25 fold lower concentration than is required to inhibit chemotaxis, which makes them ideal for treating various inflammatory diseases and disorders including, amongst others, Adult Respiratory Distress Syndrome (ARDS), cystic fibrosis and chronic bronchitis. The invention further includes methods for inhibiting tumor cell growth by employing selected members of the disclosed group of peptides to inhibit .alpha.-chemokine binding to the tumor cell.
摘要翻译：本发明公开了基于肽的组合物和用于抑制和调节CXC胞间分子作用的方法。所描述的抗白细胞介素肽抑制IL-8，GRO和MIP2β与嗜中性粒细胞和嗜中性粒细胞活化的结合。这些肽是特别有利的，因为它们以比抑制趋化性所需的浓度低25倍抑制IL-8诱导的酶释放，这使得它们是治疗各种炎性疾病和病症的理想选择，包括成人呼吸窘迫综合征（ARDS）），囊性纤维化和慢性支气管炎。本发明还包括通过使用所公开的肽组的选定成员来抑制α-细胞因子与肿瘤细胞的结合来抑制肿瘤细胞生长的方法。

49. 发明申请

US20120074280A1 ASSEMBLING CONSTRUCTION OF CLIP TO MOUNTABLE MEMBER 有权
标题翻译：组装夹具到安装构件
公开(公告)号：US20120074280A1
公开(公告)日：2012-03-29
申请号：US13377506
申请日：2010-05-25
申请人： Shinichiro Hayashi
发明人： Shinichiro Hayashi
IPC分类号： F16M13/02 , F16B19/00
CPC分类号： F16B5/0657 , F16B5/065 , F16B21/086
摘要： An assembling construction assembles a mountable member to a support member by holding a head portion of a clip on a mounting seat of the mountable member while securely fitting a leg portion in a mounting hole in the support member, the mounting seat has an instruction groove and guide grooves, the head portion of the clip has a first flange portion beam-like strip-shaped elastic pieces and which are brought into press contact with end portions of the guide grooves and stopper projections which are adapted to be brought into engagement with the end portions of the guide grooves when the clip is attempted to be shifted largely relative to the mounting seat.
摘要翻译：组装结构通过将夹子的头部保持在可安装构件的安装座上，同时将腿部牢固地安装在支撑构件的安装孔中，将安装构件组装到支撑构件上，安装座具有指示槽和引导槽，夹子的头部具有第一凸缘部分的束状条状弹性片，并与引导槽和止动突起的端部压接，这些端部适于与端部当试图夹子相对于安装座大幅偏移时，引导槽的部分。

50. 发明授权

US07413949B2 Capacitor and method for fabricating the same 失效
标题翻译：电容器及其制造方法
公开(公告)号：US07413949B2
公开(公告)日：2008-08-19
申请号：US11117328
申请日：2005-04-29
申请人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
发明人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
IPC分类号： H01L21/8242
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/43
摘要： A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.
摘要翻译：在形成在半导体衬底上的层间绝缘膜上形成电容器。电容器包括由铂制成的底部电极，由SrTaBiO（SBT）制成的电容器绝缘膜，其包含例如在晶界，晶格间位置或空穴中吸收钛的钛的元素，以及由铂制成的顶部电极。

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