专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06242787B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06242787B1
公开(公告)日：2001-06-05
申请号：US08748896
申请日：1996-11-15
申请人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/063 , H01L29/1083 , H01L29/1095 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.
摘要翻译：一种包括减小表面场强度型LDMOS晶体管的半导体器件，其可以防止当向其漏极施加反向电压时在沟道形成部分处的元件的击穿。在N型衬底中形成P阱和N阱以产生双阱结构，其中源极被设置为与N型衬底的电位相等。 N阱的漂移区域具有掺杂浓度以满足所谓的RESURF条件，其可以提供高的击穿电压低导通电阻。当向漏极施加反向电压时，包括N阱，P阱和N型衬底的寄生双极晶体管形成朝向衬底的通电路径，使得元件在沟道形成时击穿在施加反向电压时部分是可避免的。

42. 发明授权

US6157246A Load driving circuit with boosting timing control 失效
标题翻译：负载驱动电路具有升压时序控制
公开(公告)号：US6157246A
公开(公告)日：2000-12-05
申请号：US109732
申请日：1998-07-02
申请人： Mitsuhiro Saitou , Hiroyuki Ban
发明人： Mitsuhiro Saitou , Hiroyuki Ban
IPC分类号： B60R21/01 , G05F1/10
CPC分类号： B60R21/017
摘要： The present invention is aimed at avoiding noise generation accompanying switching actions in booster circuits for a load such as an air-bag driving circuit. In an air-bag driving circuit, which is designed to actuate an igniting transistor 13 in response to output of a collision detecting signal from a collision detector 7 for detecting a collision condition of a vehicle so as to supply an igniting current to a squib 11 based on a voltage boosted by booster circuits 4 and 5, the boosting operation of the booster circuits 4 and 5 is inhibited while the collision detecting signal is absent and started when the collision detecting signal is output from the collision detector 7.
摘要翻译：本发明旨在避免伴随诸如气囊驱动电路的负载的升压电路中的切换动作的噪声产生。在气囊驱动电路中，其被设计成响应来自碰撞检测器7的碰撞检测信号的输出来致动点火晶体管13，用于检测车辆的碰撞状况，以便向点火器11提供点火电流基于由升压电路4和5升压的电压，当碰撞检测信号从碰撞检测器7输出时，不存在冲突检测信号并开始升压电路4和5的升压操作。

43. 发明授权

US6104094A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US6104094A
公开(公告)日：2000-08-15
申请号：US42728
申请日：1998-03-17
申请人： Hiroyuki Ban , Fukuo Ishikawa
发明人： Hiroyuki Ban , Fukuo Ishikawa
IPC分类号： H01L21/762 , H01L21/60 , H01L21/822 , H01L23/485 , H01L27/04 , H01L27/12 , H01L23/48
CPC分类号： H01L24/05 , H01L24/48 , H01L27/1203 , H01L2224/02166 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05124 , H01L2224/05624 , H01L2224/48463 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/12032 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105
摘要： A pad for input/output signals is formed on a first conductive type insulated island region interposing an insulating film therebetween. The insulated island region is electrically insulated and isolated from other semiconductor regions in a semiconductor substrate. A fixed potential is provided to the insulated island region through an n.sup.+ -type layer and an electrode. As a result, it is possible to prevent noise superimposed on the input/output signals from interfering in the operation of the other semiconductor regions, and to prevent noise produced in the other semiconductor regions from being superimposed on the input/output signals.
摘要翻译：用于输入/输出信号的焊盘形成在其间插入有绝缘膜的第一导电型绝缘岛区域上。绝缘岛区域与半导体衬底中的其它半导体区域电绝缘和隔离。通过n +型层和电极将绝缘岛区域提供固定电位。结果，可以防止叠加在输入/输出信号上的噪声干扰其他半导体区域的操作，并且防止在其它半导体区域中产生的噪声叠加在输入/输出信号上。

44. 发明授权

US5994744A Analog switching circuit 失效
标题翻译：模拟开关电路
公开(公告)号：US5994744A
公开(公告)日：1999-11-30
申请号：US898752
申请日：1997-07-23
申请人： Tetsuya Katayama , Takeshi Miki , Junji Hayakawa , Hiroyuki Ban
发明人： Tetsuya Katayama , Takeshi Miki , Junji Hayakawa , Hiroyuki Ban
IPC分类号： H01L27/02 , H03K17/082 , H01L29/72
CPC分类号： H03K17/0822 , H01L27/0251 , H01L27/0266 , H03K2217/0018
摘要： An analog switching circuit comprises an insulated-gate field-effect transistor (Q20) having two n-type input-side and outpu-side semiconductor regions (201, 202) and a p-type semiconductor substrate region 203, for controlling conductiveness between an input terminal (IN) and an output terminal (OUT) based on a gate potential. A surge pulse detecting circuit (1020), responsive to an electric potential (Vi) of the input terminal (IN), produces a detection signal of a surge pulse equivalent to a forward bias of a PN junction formed between the semiconductor substrate region (203) and the input-side semiconductor region (201). A substrate potential setting circuit (1010) varies an electric potential of the semiconductor substrate region (203) in response to the electric potential (Vi) of the input terminal (IN) when aby detection signal is produced. Furthermore, a gate potential control circuit (1030) varies the gate potential of the insulated-gate field-effect transistor (Q20) in the same direction as the electric potential of the semiconductor substrate region (203) when the detection signal is produced.
摘要翻译：模拟开关电路包括具有两个n型输入侧和外侧半导体区域（201,202）和p型半导体衬底区域203的绝缘栅场效应晶体管（Q20），用于控制导电性输入端子（IN）和输出端子（OUT）。响应于输入端子（IN）的电位（Vi）的浪涌脉冲检测电路（1020）产生与在半导体衬底区域（203）之间形成的PN结的正向偏压相当的浪涌脉冲的检测信号）和输入侧半导体区域（201）。基板电位设定电路（1010）响应于当产生aby检测信号时的输入端子（IN）的电位（Vi），改变半导体衬底区域（203）的电位。此外，当产生检测信号时，栅极电位控制电路（1030）在与半导体衬底区域（203）的电位相同的方向上改变绝缘栅极场效应晶体管（Q20）的栅极电位。

45. 发明授权

US5889722A Hybrid integrated circuit device and method of fabricating the same 失效
标题翻译：混合集成电路装置及其制造方法
公开(公告)号：US5889722A
公开(公告)日：1999-03-30
申请号：US917131
申请日：1997-08-25
申请人： Koji Numazaki , Takahisa Koyasu , Hiroyuki Ban
发明人： Koji Numazaki , Takahisa Koyasu , Hiroyuki Ban
IPC分类号： G11C17/00 , G11C5/14 , G11C16/06 , G11C16/10 , H01L21/8247 , H01L27/115 , G11C7/00
CPC分类号： G11C5/14 , G11C16/102
摘要： An IC which integrates an EPROM is disposed on a circuit board. Also, a pad for supplying a writing voltage to the EPROM and a voltage supplying circuit, for supplying a power voltage to power terminals of the IC, which includes a first transistor and a second transistor, are disposed on the circuit board. When the pad is supplied with a high voltage for writing the data in the EPROM, the first transistor is on, the second transistor is off, and the voltage is supplied to the EPROM as the writing voltage. When data are read from the EPROM after the circuit board is packaged, because the pad is not supplied with any voltage, the first transistor is off, the second transistor is on, and a reading voltage is supplied to the EPROM via the outer terminal.
摘要翻译：将EPROM集成的IC设置在电路板上。此外，在电路板上设置用于向EPROM提供写入电压的焊盘和用于向包括第一晶体管和第二晶体管的IC的电源端子提供电源电压的电压供给电路。当提供用于将数据写入EPROM的高电压时，第一晶体管导通，第二晶体管截止，并将电压作为写入电压提供给EPROM。在电路板封装后从EPROM读取数据时，由于焊盘未被提供任何电压，所以第一晶体管截止，第二晶体管导通，并且读取电压通过外部端子提供给EPROM。

46. 发明申请

US20100178213A1 REACTOR AND REACTING METHOD 有权
标题翻译：反应器和反应方法
公开(公告)号：US20100178213A1
公开(公告)日：2010-07-15
申请号：US12482903
申请日：2009-06-11
申请人： Hiroyuki Ban , Koji Noishiki , Kazuto Okada , Seiichi Yamamoto
发明人： Hiroyuki Ban , Koji Noishiki , Kazuto Okada , Seiichi Yamamoto
IPC分类号： B01J14/00
CPC分类号： B01J4/001 , B01F5/0471 , B01F13/0059 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/247 , B01J2219/2485 , B01J2219/2486 , B01J2219/2487 , B01J2219/2488 , B01J2219/249
摘要： It is aimed to improve reaction efficiency by increasing a contact area of first and second reactants per unit volume without reducing dimensions of an inlet path for the first reactant and an inlet path for the second reactant in a layer-thickness direction.In a reactor, a channel includes a first inlet path having the first reactant introduced thereinto, a second inlet path arranged while being separated from the first inlet path and having the second reactant introduced thereinto, a junction channel for causing the first reactant flowing via the first inlet path and the second reactant flowing via the second inlet path to join in the form of the laminar flows separated from each other, and a reaction channel connected with a downstream side of the junction channel for permitting the laminar flow of the first reactant and that of the second reactant held in contact with each other and reacting the two reactants at a contact interface thereof. A dimension of the reaction channel in the layer-thickness direction perpendicular to the contact interface is set to be smaller than the sum of a dimension of the first inlet path in the layer-thickness direction and a dimension of the second inlet path in the layer-thickness direction.
摘要翻译：旨在通过增加每单位体积的第一和第二反应物的接触面积而不减少第一反应物的入口路径的尺寸和层厚度方向上的第二反应物的入口路径来提高反应效率。在反应器中，通道包括具有引入其中的第一反应物的第一入口路径，第二入口通道，其与第一入口路径分离并且具有引入第二入口路径的第二入口通道，用于使第一反应物经由第一入口路径和第二反应物经由第二入口路径流动以彼此分离的层流的形式连接;以及反应通道，其与接合通道的下游侧连接，以允许第一反应物的层流，以及第二反应物彼此接触并在其接触界面处使两种反应物反应。垂直于接触界面的层厚度方向上的反应通道的尺寸被设定为小于层厚度方向上的第一入口路径的尺寸和层中的第二入口路径的尺寸之和厚度方向。

47. 发明授权

US07554314B2 Current mirror circuit for reducing chip size 有权
标题翻译：电流镜电路，减少芯片尺寸
公开(公告)号：US07554314B2
公开(公告)日：2009-06-30
申请号：US11589878
申请日：2006-10-31
申请人： Satoshi Sobue , Hiroyuki Ban , Shigenori Mori
发明人： Satoshi Sobue , Hiroyuki Ban , Shigenori Mori
IPC分类号： G05F3/16
CPC分类号： G05F3/265 , G05F3/267
摘要： A current mirror circuit includes transistors having bases coupled together and emitters connected to a voltage line. The current mirror circuit further includes a zener diode having an anode connected to the bases and a cathode connected to the voltage line. When a base potential of the transistors decreases, a reverse current of the zener diode increases. Therefore, the zener diode has a resistance and acts as a resistor to clamp the base potential of the transistors. A layout area of the zener diode is much smaller than that of the resistor having a resistance equal to that of the zener diode. The current mirror circuit achieves reduced chip size by using the zener diode instead of the resistor.
摘要翻译：电流镜电路包括具有耦合在一起的基极和连接到电压线的发射极的晶体管。电流镜电路还包括具有连接到基极的阳极和连接到电压线的阴极的齐纳二极管。当晶体管的基极电位降低时，齐纳二极管的反向电流增加。因此，齐纳二极管具有电阻并且用作钳位晶体管的基极电位的电阻器。齐纳二极管的布局面积远小于具有等于齐纳二极管电阻的电阻器的布局面积。电流镜电路通过使用齐纳二极管而不是电阻实现了减小的芯片尺寸。

48. 发明授权

US07542255B2 Input protection circuit 有权
标题翻译：输入保护电路
公开(公告)号：US07542255B2
公开(公告)日：2009-06-02
申请号：US11715421
申请日：2007-03-08
申请人： Shinichiro Nakata , Hiroyuki Ban , Satoshi Ichikawa
发明人： Shinichiro Nakata , Hiroyuki Ban , Satoshi Ichikawa
IPC分类号： H02H3/22
CPC分类号： H01L27/0255 , H01L2924/0002 , H01L2924/00
摘要： An input protection circuit comprises a reverse flow preventing diode, a series circuit of a diode and a Zener diode, and a current path forming resistor or diode. The reverse flow preventing diode is connected between an input terminal and an internal circuit. The series circuit is connected between the input terminal and a ground. The current path forming resistor or diode is connected between a first common connection point of the reverse flow preventing diode and the internal circuit and a second common connection point of the series circuit, and sets a potential at the first common connection point to be less than a potential at the input terminal when the surge voltage is applied to the input terminal.
摘要翻译：输入保护电路包括反向阻流二极管，二极管和齐纳二极管的串联电路以及电流路径形成电阻器或二极管。反向防流二极管连接在输入端和内部电路之间。串联电路连接在输入端和地之间。电流通路形成电阻器或二极管连接在反向防流二极管的第一公共连接点和内部电路之间，并且串联电路的第二公共连接点连接，并将第一公共连接点处的电位设置为小于当浪涌电压施加到输入端时在输入端子处的电位。

49. 发明授权

US07294912B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07294912B2
公开(公告)日：2007-11-13
申请号：US11196355
申请日：2005-08-04
申请人： Katsuhito Takeuchi , Naohito Mizuno , Shinichi Hirose , Hiroyuki Ban
发明人： Katsuhito Takeuchi , Naohito Mizuno , Shinichi Hirose , Hiroyuki Ban
IPC分类号： H01L23/495
CPC分类号： H01L23/4334 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is composed of a heat sink, an IC chip mounted and fixed on a specific face of the heat sink, a lead frame electrically connected to the IC chip and a sealing mold resin package. One or more of the faces of the heat sink has a specific surface area.
摘要翻译：半导体器件由散热器，安装在散热器的特定面上的IC芯片，与IC芯片电连接的引线框架和密封模制树脂封装构成。散热器的一个或多个面具有比表面积。

50. 发明授权

US07049879B2 Power supply circuit with control of rise characteristics of output voltage 有权
标题翻译：电源电路可控制输出电压的上升特性
公开(公告)号：US07049879B2
公开(公告)日：2006-05-23
申请号：US10617297
申请日：2003-07-11
申请人： Nobuyoshi Osamura , Takaharu Hutamura , Hiroyuki Ban
发明人： Nobuyoshi Osamura , Takaharu Hutamura , Hiroyuki Ban
IPC分类号： H03K17/56
CPC分类号： G05F1/575
摘要： In a power supply circuit, a main transistor, which transmits power from an input terminal to an output terminal, is controlled so that a detected voltage from an input voltage is consistent with a reference voltage indicating a target voltage. An output current is detected and a limited value of the output current is set so that the limited value increases gradually when the output voltage rises up to the target voltage. The main transistor is controlled so that the output current keeps a value less than or equal to the limited value. This configuration is able to suppress an overshoot of the output voltage, thanks to a gradually raised control of the limited value. Additionally, to avoid the influence of a ringing component of the input voltage, a delay control circuit to give a delay to the start of rise of the output voltage can be provided.
摘要翻译：在电源电路中，控制从输入端子向输出端子发送电力的主晶体管，使得来自输入电压的检测电压与表示目标电压的基准电压一致。检测输出电流，并设定输出电流的有限值，使得当输出电压上升到目标电压时，限制值逐渐增加。主晶体管被控制，使得输出电流保持小于或等于限制值的值。这种配置能够抑制输出电压的过冲，这是由于限制值的逐渐增加的控制。此外，为了避免输入电压的振铃分量的影响，可以提供延迟控制电路，以给出输出电压的上升开始的延迟。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式