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    • 3. 发明申请
    • Exception test support technique
    • 异常测试支持技术
    • US20050283763A1
    • 2005-12-22
    • US10948308
    • 2004-09-24
    • Ryoko FujikawaTetsuya KatayamaKinya Miyazaki
    • Ryoko FujikawaTetsuya KatayamaKinya Miyazaki
    • G06F11/28G06F9/44
    • G06F11/3672G06F11/3696
    • This invention is to provide a technique for automatically performing a test of exception handling in a program created by using an object-oriented programming language. The method according to this invention comprises: analyzing a source program to be tested; generating a driver class for invoking a method of classes included in the source program to be tested; storing data of lines in the source program to be tested, which are executed by the driver class, so as to correspond to the driver class; extracting the driver class for causing a line for invoking a specific method having a possibility that an exception occurs to be executed; generating an exception occurrence stub class as a class having a same name as a name of a specific class, wherein the exception occurrence stub class has a method, which generates the exception and has a same name as a name of the specific method; and executing the driver class and the exception occurrence stub class, and storing execution result data.
    • 本发明是提供一种用于在通过使用面向对象编程语言创建的程序中自动执行异常处理测试的技术。 根据本发明的方法包括:分析要测试的源程序; 生成用于调用要测试的源程序中包含的类的方法的驱动程序类; 将由驱动程序类执行的要测试的源程序中的行的数据存储为与驱动程序类相对应; 提取驱动程序类以引起一行用于调用具有异常发生的可能性被执行的特定方法; 生成异常发生存根类作为与特定类的名称具有相同名称的类,其中异常发生存根类具有生成异常并且具有与特定方法的名称相同的名称的方法; 并执行驱动程序类和异常发生存根类,并存储执行结果数据。
    • 6. 发明授权
    • Method of producing a MESFET semiconductor device having a recessed gate
structure
    • 一种具有凹陷栅极结构的MESFET半导体器件的制造方法
    • US06117713A
    • 2000-09-12
    • US19163
    • 1998-02-06
    • Koichi HoshinoTetsuya Katayama
    • Koichi HoshinoTetsuya Katayama
    • H01L29/41H01L21/335H01L21/338H01L29/812
    • H01L29/66431H01L29/66848
    • An insulating layer is formed on a semiconductor substrate, and a first resist layer having a first resist opening portion is formed on the insulating layer. Then, the insulating layer is etched thought the opening portion to expose the substrate. After removing the first resist layer, a second resist layer having second resist opening portions are formed. One of the second resist opening portions is provided to expose the substrate, and a recess is formed in the substrate through the opening portion. Further, the insulating layer exposed from the other of the second resist opening portions is removed. Then, an electrode member for gate, source, and drain electrodes is deposited on the substrate. As a result, variations in intervals between the gate and drain electrodes and between the gate and source electrodes can be reduced.
    • 在半导体基板上形成绝缘层,在绝缘层上形成具有第一抗蚀剂开口部的第一抗蚀剂层。 然后,认为绝缘层被认为是用于露出衬底的开口部分。 在去除第一抗蚀剂层之后,形成具有第二抗蚀剂开口部分的第二抗蚀剂层。 设置第二抗蚀剂开口部之一以露出基板,并且通过开口部在基板中形成凹部。 此外,从第二抗蚀剂开口部分中的另一个露出的绝缘层被去除。 然后,在基板上沉积用于栅极,源极和漏极的电极部件。 结果,可以减小栅极和漏极之间以及栅极和源极之间的间隔的变化。
    • 7. 发明授权
    • Analog switching circuit
    • 模拟开关电路
    • US5994744A
    • 1999-11-30
    • US898752
    • 1997-07-23
    • Tetsuya KatayamaTakeshi MikiJunji HayakawaHiroyuki Ban
    • Tetsuya KatayamaTakeshi MikiJunji HayakawaHiroyuki Ban
    • H01L27/02H03K17/082H01L29/72
    • H03K17/0822H01L27/0251H01L27/0266H03K2217/0018
    • An analog switching circuit comprises an insulated-gate field-effect transistor (Q20) having two n-type input-side and outpu-side semiconductor regions (201, 202) and a p-type semiconductor substrate region 203, for controlling conductiveness between an input terminal (IN) and an output terminal (OUT) based on a gate potential. A surge pulse detecting circuit (1020), responsive to an electric potential (Vi) of the input terminal (IN), produces a detection signal of a surge pulse equivalent to a forward bias of a PN junction formed between the semiconductor substrate region (203) and the input-side semiconductor region (201). A substrate potential setting circuit (1010) varies an electric potential of the semiconductor substrate region (203) in response to the electric potential (Vi) of the input terminal (IN) when aby detection signal is produced. Furthermore, a gate potential control circuit (1030) varies the gate potential of the insulated-gate field-effect transistor (Q20) in the same direction as the electric potential of the semiconductor substrate region (203) when the detection signal is produced.
    • 模拟开关电路包括具有两个n型输入侧和外侧半导体区域(201,202)和p型半导体衬底区域203的绝缘栅场效应晶体管(Q20),用于控制导电性 输入端子(IN)和输出端子(OUT)。 响应于输入端子(IN)的电位(Vi)的浪涌脉冲检测电路(1020)产生与在半导体衬底区域(203)之间形成的PN结的正向偏压相当的浪涌脉冲的检测信号 )和输入侧半导体区域(201)。 基板电位设定电路(1010)响应于当产生aby检测信号时的输入端子(IN)的电位(Vi),改变半导体衬底区域(203)的电位。 此外,当产生检测信号时,栅极电位控制电路(1030)在与半导体衬底区域(203)的电位相同的方向上改变绝缘栅极场效应晶体管(Q20)的栅极电位。
    • 8. 发明授权
    • Composite bearing structure
    • 复合轴承结构
    • US5675201A
    • 1997-10-07
    • US295623
    • 1994-08-24
    • Osamu KomuraTetsuya KatayamaAkira YamakawaKenji MatsunumaNorio YasuokaMatsuo HiguchiMasaya Miyake
    • Osamu KomuraTetsuya KatayamaAkira YamakawaKenji MatsunumaNorio YasuokaMatsuo HiguchiMasaya Miyake
    • F16C17/02F16C32/00F16C32/04F16C33/10F16C33/24F16C39/06H02K7/08H02K7/09
    • F16C32/0427F16C17/107F16C32/0431F16C33/107F16C39/063
    • A composite bearing structure that has a high rotational accuracy and that can withstand high-speed rotation comprises first bearing means, second bearing means, third bearing means and fourth bearing means. The first bearing means supports a radial impact force which is applied to a rotator during rotation, and is formed by an inner ring (1) and an outer ring (2) consisting of silicon nitride ceramics sintered bodies. The second bearing means supports an axial load which is applied to the rotator while maintaining a prescribed clearance with the rotator, and is formed by a magnetic bearing body of two permanent magnets (12) and (13) which are thrust-directionally opposed to each other. The third bearing means maintains the radial rotational accuracy of the rotator, and is formed by a radial dynamic pressure producing groove (5) which is formed in a cylindrical surface of the inner ring (1). The fourth bearing means maintains the thrust-directional rotational accuracy of the rotator, and is formed by an air dome portion (100) which is confined in a semi-closed state by the inner ring (1), the outer ring (2) and a cover (4).
    • PCT No.PCT / JP94 / 00002 Sec。 371日期:1994年8月24日 102(e)日期1994年8月24日PCT 1994年1月4日PCT PCT。 公开号WO94 / 16233 PCT 日期1994年7月21日具有高旋转精度并能承受高速旋转的复合轴承结构包括第一轴承装置,第二轴承装置,第三轴承装置和第四轴承装置。 第一轴承装置支撑在旋转期间施加到旋转器的径向冲击力,并且由内环(1)和由氮化硅陶瓷烧结体组成的外圈(2)形成。 第二轴承装置支撑轴向载荷,该轴向载荷与旋转体保持规定的间隙,并且由两个永磁体(12)和(13)的磁轴承体形成,该永磁体与每个 其他。 第三轴承装置维持旋转体的径向旋转精度,并且由形成在内圈(1)的圆柱形表面中的径向动压产生槽(5)形成。 第四轴承装置保持旋转体的推力定向旋转精度,并且由内圈(1),外圈(2)和外圈(1)限定在半闭合状态的空气圆顶部(100)形成, 盖(4)。