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    • 1. 发明申请
    • Current mirror circuit and constant current circuit having the same
    • 电流镜电路和恒流电路具有相同的功能
    • US20070103139A1
    • 2007-05-10
    • US11589878
    • 2006-10-31
    • Satoshi SobueHiroyuki BanShigenori Mori
    • Satoshi SobueHiroyuki BanShigenori Mori
    • G05F3/16
    • G05F3/265G05F3/267
    • A current mirror circuit includes transistors having bases coupled together and emitters connected to a voltage line. The current mirror circuit further includes a zener diode having an anode connected to the bases and a cathode connected to the voltage line. When a base potential of the transistors decreases, a reverse current of the zener diode increases. Therefore, the zener diode has a resistance and acts as a resistor to clamp the base potential of the transistors. A layout area of the zener diode is much smaller than that of the resistor having a resistance equal to that of the zener diode. The current mirror circuit achieves reduced chip size by using the zener diode instead of the resistor.
    • 电流镜电路包括具有耦合在一起的基极和连接到电压线的发射极的晶体管。 电流镜电路还包括具有连接到基极的阳极和连接到电压线的阴极的齐纳二极管。 当晶体管的基极电位降低时,齐纳二极管的反向电流增加。 因此,齐纳二极管具有电阻并且用作钳位晶体管的基极电位的电阻器。 齐纳二极管的布局面积远小于具有等于齐纳二极管电阻的电阻器的布局面积。 电流镜电路通过使用齐纳二极管而不是电阻实现了减小的芯片尺寸。
    • 2. 发明授权
    • Current mirror circuit for reducing chip size
    • 电流镜电路,减少芯片尺寸
    • US07554314B2
    • 2009-06-30
    • US11589878
    • 2006-10-31
    • Satoshi SobueHiroyuki BanShigenori Mori
    • Satoshi SobueHiroyuki BanShigenori Mori
    • G05F3/16
    • G05F3/265G05F3/267
    • A current mirror circuit includes transistors having bases coupled together and emitters connected to a voltage line. The current mirror circuit further includes a zener diode having an anode connected to the bases and a cathode connected to the voltage line. When a base potential of the transistors decreases, a reverse current of the zener diode increases. Therefore, the zener diode has a resistance and acts as a resistor to clamp the base potential of the transistors. A layout area of the zener diode is much smaller than that of the resistor having a resistance equal to that of the zener diode. The current mirror circuit achieves reduced chip size by using the zener diode instead of the resistor.
    • 电流镜电路包括具有耦合在一起的基极和连接到电压线的发射极的晶体管。 电流镜电路还包括具有连接到基极的阳极和连接到电压线的阴极的齐纳二极管。 当晶体管的基极电位降低时,齐纳二极管的反向电流增加。 因此,齐纳二极管具有电阻并且用作钳位晶体管的基极电位的电阻器。 齐纳二极管的布局面积远小于具有等于齐纳二极管电阻的电阻器的布局面积。 电流镜电路通过使用齐纳二极管而不是电阻实现了减小的芯片尺寸。
    • 3. 发明申请
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US20070279272A1
    • 2007-12-06
    • US11806326
    • 2007-05-31
    • Satoshi SobueHiroyuki Ban
    • Satoshi SobueHiroyuki Ban
    • H03M1/78
    • H01L27/016H01L28/20
    • A semiconductor device includes a semiconductor substrate, a first wire disposed on the semiconductor substrate, an first insulating layer disposed on the semiconductor substrate and the wire, a first thin film resistor having a first resistance within a predetermined error range, and a second thin film resistor having a second resistance which is allowable to be out of the predetermined error range. A surface of the first insulating layer includes a first area and a second area, in which the second area is located adjacent to the first wire. The first thin film resistor is disposed in the first area, and the second thin film resistor is disposed in the second area.
    • 半导体器件包括半导体衬底,设置在半导体衬底上的第一布线,设置在半导体衬底和布线上的第一绝缘层,具有预定误差范围内的第一电阻的第一薄膜电阻和第二薄膜 电阻器具有允许超出预定误差范围的第二电阻。 第一绝缘层的表面包括第一区域和第二区域,其中第二区域位于第一导线附近。 第一薄膜电阻器设置在第一区域中,第二薄膜电阻器设置在第二区域中。
    • 5. 发明授权
    • Level shift circuit
    • 电平移位电路
    • US07639060B2
    • 2009-12-29
    • US12076521
    • 2008-03-19
    • Satoshi ShirakiHiroyuki BanJunichi Nagata
    • Satoshi ShirakiHiroyuki BanJunichi Nagata
    • H03L5/00
    • H03K19/018571H01L27/0251H03K5/003H03K19/00361
    • A level shift circuit includes a first capacitor circuit including capacitors connected in series between a ground and a predetermined potential, a first trigger circuit coupled to the predetermined potential side of the first capacitor circuit, an input terminal coupled to the ground side of the first capacitor circuit, a second capacitor circuit including capacitors connected in series between the ground and the predetermined potential, a second trigger circuit coupled to the predetermined potential side of the second capacitor circuit, an inverter coupled between the input terminal and the ground potential side of the second capacitor circuit, and a SR latch circuit having a first input coupled to an output of the first trigger circuit and a second input coupled to an output of the second trigger circuit.
    • 电平移位电路包括:第一电容器电路,包括串联连接在接地和预定电位之间的电容器;耦合到第一电容器电路的预定电位侧的第一触发电路;耦合到第一电容器的接地侧的输入端子 电路,包括串联连接在接地和预定电位之间的电容器的第二电容器电路,耦合到第二电容器电路的预定电位侧的第二触发电路,耦合在第二电容器的输入端子和地电位侧之间的反相器 电容器电路和SR锁存电路,其具有耦合到第一触发电路的输出的第一输入和耦合到第二触发电路的输出的第二输入。
    • 9. 发明授权
    • Semiconductor diffused resistor
    • 半导体扩散电阻
    • US5661332A
    • 1997-08-26
    • US378273
    • 1995-01-26
    • Katsumi NakamuraTomohisa YamamotoHiroyuki Ban
    • Katsumi NakamuraTomohisa YamamotoHiroyuki Ban
    • H01C7/00H01L21/761H01L21/822H01L27/04H01L29/8605H01L29/00
    • H01L29/8605
    • A diffused resistor capable of suppressing variation of characteristics caused by leakage of current occurring under high-temperature conditions. An N-type layer is epitaxially grown on a P-type substrate, and an N-type resistor island isolated by a P-type isolation region is formed. A P-type diffused resistor is formed in the island. An N-type region of high impurity concentration is disposed in close proximity to the high-potential end of the P-type diffused resistor. An electrode is brought into contact with not only the high-potential end but also the N-type high-impurity concentration region through the same contact hole. Thus, a parasitic transistor, which is formed from the P-type diffused resistor, the N-type resistor island and the P-type substrate (P-type isolation region), can be prevented from turning on with a minimal increase of the element area.
    • 一种扩散电阻器,其能够抑制由高温条件下发生的电流泄漏引起的特性变化。 在P型衬底上外延生长N型层,并且形成由P型隔离区隔离的N型电阻器岛。 岛内形成P型扩散电阻。 高杂质浓度的N型区域靠近P型扩散电阻器的高电位端设置。 电极不仅通过相同的接触孔与高电位端而且与N型高杂质浓度区域接触。 因此,可以防止由P型扩散电阻器,N型电阻岛和P型衬底(P型隔离区域)形成的寄生晶体管以元件的最小增加而导通 区。
    • 10. 发明授权
    • Driving apparatus for cross-coil type analog indicating instrument
having reduced ripple
    • 交叉线圈型模拟指示仪的驱动装置具有减小的纹波
    • US5313155A
    • 1994-05-17
    • US885730
    • 1992-05-19
    • Tomohisa YamamotoHiroyuki Ban
    • Tomohisa YamamotoHiroyuki Ban
    • G01D13/22G01R5/16G01R7/06G01R23/06G01R11/36G01P3/48
    • G01R5/16G01R7/06
    • A driving apparatus used for an analog indicating instrument having a pair of cross coils comprises a pulse signal generating device for generating a pulse signal having a frequency proportional to a quantity to be measured, a frequency-voltage conversion device for generating a ripple voltage proportional to the frequency of the pulse, holding a mean voltage of the ripple voltage as an analog voltage while restraining the ripple, and controlling the analog voltage so as to change following a mean value of the ripple voltage, thereby to supply the analog voltage, and driving devices for supplying a current in accordance with the analog voltage to the cross coils so as to drive these cross coils. The driving apparatus has effects on improving responsibility of frequency-voltage conversion operation in a low frequency region and reducing the deflection of a pointer of an instrument by restraining the ripples.
    • 用于具有一对交叉线圈的模拟指示仪的驱动装置包括:脉冲信号发生装置,用于产生具有与被测量成比例的频率的脉冲信号;频率电压转换装置,用于产生与 脉冲的频率,在抑制纹波的同时将纹波电压的平均电压保持为模拟电压,并且控制模拟电压以随着纹波电压的平均值而改变,从而提供模拟电压,并驱动 用于根据模拟电压向交叉线圈提供电流以驱动这些交叉线圈的装置。 驱动装置具有改善低频区域中的频率 - 电压转换操作的责任并通过抑制波纹来减少仪器的指示器的偏转的效果。