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41. 发明公开

EP1916715A2 Semiconductor for macro and micro frequency tuning, and antenna and frequency tuning circuit having the semiconductor 有权
标题翻译：半导体用于宏观和微观的频率调谐和天线和电路，用于与该半导体频率调整
公开(公告)号：EP1916715A2
公开(公告)日：2008-04-30
申请号：EP07115429.8
申请日：2007-08-31
申请人： Samsung Electronics Co., Ltd
发明人： Jung, Chang-won , Choi, Jung-han , Song, In-sang , Kim, Young-eil
IPC分类号： H01L29/08 , H01L27/07 , H01L29/73 , H01L29/868 , H01L27/082
CPC分类号： H01L29/0821 , H01L27/0676 , H01L27/0808 , H01L27/0814 , H01L29/0804 , H01L29/73 , H01L29/868 , H01L29/93 , H01Q9/0407
摘要： A semiconductor clement for macro and micro frequency tuning, and an antenna and a frequency tuning circuit having the semiconductor element, are provided. The semiconductor element includes first and second semiconductors (31,32) which have a same polarity, a third semiconductor (33) which has a polarity opposite to the polarity of the first and second semiconductors and is interposed between the first and the second semiconductors, a first intrinsic semiconductor (34) which is interposed between the first and the third semiconductors, and a second intrinsic semiconductor (35) which is interposed between the third and the second semiconductors.
摘要翻译：一种半导体克莱门特用于宏观和微观的频率调谐，以及天线和具有该半导体元件的频率的调谐电路，设置。该半导体元件包括第一和第二半导体（31,32），其具有相同的极性，第三半导体（33），其具有相反的极性的第一和第二半导体的极性并且在第一和第二半导体之间，第一本征半导体（34），它是第一和第三半导体，第二本征半导体（35），其是所述第三和第二半导体之间夹之间。

42. 发明公开

EP1659688A3 Monolithic duplexer 有权
标题翻译：单片双工器
公开(公告)号：EP1659688A3
公开(公告)日：2007-09-12
申请号：EP05024698.2
申请日：2005-11-11
申请人： Samsung Electronics Co., Ltd.
发明人： Park, Yun-kwon , Song, In-sang , Yun, Seok-chul , Hong, Seog-woo , Ha, Byeoung-ju , Shim, Dong-ha , Park, Hae-seok , Nam, Kuang-woo , Kim, Duck-hwan
IPC分类号： H03H9/70 , H03H9/10 , H03H9/58 , H03H3/02
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706 , Y10T29/42 , Y10T29/43 , Y10T29/4902 , Y10T29/49155
摘要： A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate (100), a transmitting-end filter (300) formed in a first area on an upper surface of the substrate, a receiving-end filter (400) formed in a second area on the upper surface of the substrate, a packaging substrate (200), bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter (210), formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

43. 发明公开

EP1523097A3 Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same 有权转让
标题翻译：空气间隙型的薄膜谐振器，其制造方法及其在所述过滤器和双工器使用
公开(公告)号：EP1523097A3
公开(公告)日：2007-07-04
申请号：EP04255782.7
申请日：2004-09-22
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Song, In-sang , Ha, Byeoung-ju , Hwang, Jun-sik , Park, Yun-kwon
IPC分类号： H03H3/02
CPC分类号： H03H9/587 , H03H3/02 , H03H9/105 , H03H9/173 , Y10T29/42
摘要： An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate (200) having a cavity part (210) at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film (220); a stacked resonance part (230) including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate (240) having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap (250) formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.
摘要翻译：气隙型薄膜体声波谐振器（FBAR）及其制造方法是相同的。所以圆盘游离缺失是一个滤波器和双工器用人气隙型FBAR。气隙型FBAR包括：具有在其上表面上的预定区域中的空腔部（210）的第一衬底（200）; 的介电薄膜层叠在第一基板的上部; 所述第一基板和所述电介质的电影（220）之间形成的第一空气间隙; 堆叠谐振部（230）包括下电极/压电体层/上部形成在电介质成膜的上部电极; 一个第二基片（240）在其下表面上的预定区域具有空腔部和接合到所述第一基板; 和第二空气间隙（250）的叠层谐振部和第二基板之间形成。由液晶聚合物（LCP）的预定厚度的薄膜可被用作电介质成膜。

44. 发明公开

EP1793403A2 Mems Switch 审中-公开
标题翻译： MEMS Schalter
公开(公告)号：EP1793403A2
公开(公告)日：2007-06-06
申请号：EP06121184.3
申请日：2006-09-25
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Che-heung , Choi, Hyung 125-603, Sibeomdanji Hansin Apt. , Song, In-sang , Lee, Sang-hun , Kwon, Sang-wook
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H1/20
摘要： A MEMS (micro electro mechanical system) switch, which includes a substrate; a fixed electrode formed on an upper side of the substrate; a signal line formed on both sides of the fixed electrode; a contact member formed on an upper side of the signal line at a distance from said fixed electrode and contacting an edging portion of the signal line; a supporting member supporting the contact member to be movable; and a moving electrode disposed on an upper side of the supporting member.
摘要翻译： MEMS（微电子机械系统）开关，其包括基板; 形成在所述基板的上侧的固定电极; 形成在固定电极两侧的信号线; 接触构件，形成在距离所述固定电极一定距离处的信号线的上侧，并与信号线的边缘部分接触; 支撑构件，其支撑所述接触构件以可移动; 以及设置在所述支撑构件的上侧的移动电极。

45. 发明公开

EP1746722A2 Film bulk acoustic wave resonator and manufacturing method thereof 审中-公开
标题翻译： Dünnschicht-Volumenwellen-Resonator（FBAR）和sein Herstellungsverfahren
公开(公告)号：EP1746722A2
公开(公告)日：2007-01-24
申请号：EP06253526.5
申请日：2006-07-05
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Duck-hwan , Park, Yun-kwon , Kim, Chul-soo , Sul, Sang-chul , Ha, Byeoung-ju , Song, In-sang
IPC分类号： H03H9/17
CPC分类号： H03H9/172 , H03H3/02 , H03H9/02015 , H03H9/02118
摘要： A film bulk acoustic resonator includes a substrate (101); a lower electrode (110) formed on top of the substrate (101); a piezoelectric membrane (113) formed on top of the lower electrode (110) and having a crystallographic axis (CC) so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode (110); and an upper electrode (115) formed on top of the piezoelectric membrane (113). The circumference of the piezoelectric membrane (113) may comprise an enveloping wall (117) which may be patterned on the same layer as that of forming the upper electrode (115).
摘要翻译：薄膜体声波谐振器包括基板（101）; 形成在所述基板（101）的顶部上的下电极（110）; 形成在所述下电极（110）的顶部并且具有如下倾斜的结晶轴（CC）的压电膜（113），以便当声波向所述下电极（110）前进时产生全反射; 以及形成在所述压电膜（113）的顶部上的上电极（115）。压电膜（113）的圆周可以包括可以在与形成上电极（115）的层相同的层上被图案化的包封壁（117）。

46. 发明公开

EP1659688A2 Monolithic duplexer 有权
标题翻译：单片双工器
公开(公告)号：EP1659688A2
公开(公告)日：2006-05-24
申请号：EP05024698.2
申请日：2005-11-11
申请人： Samsung Electronics Co., Ltd.
发明人： Park, Yun-kwon , Song, In-sang , Yun, Seok-chul , Hong, Seog-woo , Ha, Byeoung-ju , Shim, Dong-ha , Park, Hae-seok , Nam, Kuang-woo , Kim, Duck-hwan
IPC分类号： H03H9/70 , H03H9/10 , H03H9/58 , H03H3/02
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706 , Y10T29/42 , Y10T29/43 , Y10T29/4902 , Y10T29/49155
摘要： A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate (100), a transmitting-end filter (300) formed in a first area on an upper surface of the substrate, a receiving-end filter (400) formed in a second area on the upper surface of the substrate, a packaging substrate (200), bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter (210), formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.
摘要翻译：公开了一种超小型高性能单片双工器。单片双工器包括：衬底（100），形成在衬底的上表面上的第一区域中的透射端过滤器（300）;形成在第二区域中的接收端过滤器（400）基板，封装在所述基板的上表面上的区域上的封装基板（200），用于将所述发送端滤波器和所述接收端滤波器封装在密封状态;以及移相器（210），形成在一个分别连接到发送端滤波器和接收端滤波器，用于截取发送端滤波器与接收端滤波器之间的信号流入。

47. 发明公开

EP1657817A2 Monolithic rf filter 审中-公开
标题翻译：单片射频滤波器
公开(公告)号：EP1657817A2
公开(公告)日：2006-05-17
申请号：EP05024448.2
申请日：2005-11-09
申请人： Samsung Electronics Co., Ltd.
发明人： Park, Yun-kwon , Kim, Duck-hwan 505-803, Cheonggu Apt. , Nam, Kuang-woo Samsung Adv. Inst. of Technology , Song, In-sang , Yun, Seok-chul Samsung Adv. Inst. of Technology , Ha, Byeoung-ju , Kim, Jong-seok
IPC分类号： H03H9/58 , H03H9/02
CPC分类号： H03H9/0542 , H03H9/542 , H03H9/564 , H03H9/566
摘要： A filter formed of film bulk acoustic resonators (40,42,44,48,54,56,60) has a topology that enables a trimming inductor (58) to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators (54,56) each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor (58) is connected between the common electrode and ground potential. A third shunt resonator (60) is connected between the series-connected resonators and ground potential.
摘要翻译：由薄膜体声共振器（40,42,44,48,54,56,60）形成的滤波器具有能够将修整电感器（58）制造在与谐振器阵列相同的衬底上的拓扑结构。整个滤波器可以在单个芯片上制造，仅利用集成电路工艺。在示例性实施例中，一对并联谐振器（54,56）各自具有连接到串联谐振器的一个电极。两个并联谐振器的其他电极彼此共同连接。修整电感器（58）连接在公共电极和地电位之间。第三并联谐振器（60）连接在串联连接的谐振器和地电位之间。

48. 发明公开

EP1344746A3 MEMS device and fabrication method thereof 有权
标题翻译： MEMS器件和它们的制备方法
公开(公告)号：EP1344746A3
公开(公告)日：2005-03-02
申请号：EP03251321.0
申请日：2003-03-05
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Lee, Eun-sung , Kim, Chung-woo, 101-705 Park Town Daelim Apt. , Song, In-sang , Kim, Jong-seok , Lee, Moon-chul
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81B3/0078 , B81B2201/014 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C2201/0107 , B81C2201/014 , H01H59/0009
摘要： A method for fabricating a MEMS device having a fixing part, driving part, electrode part, and contact parts on a substrate. A driving electrode is formed on the substrate, and then an insulation layer is formed thereon. The insulation layer is patterned, and the regions of the insulation layer in which the fixing part and the contact parts are formed are etched. A metal layer is formed on the substrate. The metal layer is planarized down to the insulation layer, and the driving electrode is formed. A sacrificial layer is formed on the substrate, and a groove-shaped space is formed in a region in which the fixing part is formed. A MEMS structure layer is formed on the sacrificial layer. Sidewalls are formed in the groove-shaped space, and the fixing part and driving part are formed, leaving the sacrificial layer underneath the fixing part.

49. 发明公开

EP1480335A2 Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby 有权
标题翻译：使用金属层的内部机械张力并由此产生谐振器的体声波谐振器的制造方法
公开(公告)号：EP1480335A2
公开(公告)日：2004-11-24
申请号：EP04252122.9
申请日：2004-04-08
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Jong-seok , Choa, Sung-hoon , Song, In-sang , Hong, Young-tack
IPC分类号： H03H3/02
CPC分类号： H03H9/02133 , H03H3/02 , H03H9/172 , Y10T29/42
摘要： A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode (320) by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer (330) by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode (340) by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.
摘要翻译：一种制造薄膜体声波谐振器以及由此制造谐振器的方法。该方法包括：在半导体基板上层叠牺牲层，去除所述牺牲层的预定区域，以实现对半导体基板的信号线和下部电极之间的电接触，通过沉积金属膜用于形成下部电极（320）形成图案基于所述下电极的形状的牺牲层上下电极，通过图案化基于所述牺牲层的形状，形成由沉积在下部电极上的压电材料，并通过压电体层（330），和上部成形上电极（340）通过沉积在压电层上的金属片和通过构图基于形状的压电体层的，沉积压力的worin的至少一个和一个沉积功率被控制，以产生向上应力当沉积金属膜用于下电极。

50. 发明公开

EP1355162A1 RF power sensor for measuring an RF signal power using capacitance 失效转让
标题翻译： Kapazitiv arbeitender HF-Leistungssensor zur Messung eines HF-Leistungssignals
公开(公告)号：EP1355162A1
公开(公告)日：2003-10-22
申请号：EP03008483.4
申请日：2003-04-11
申请人： SAMSUNG ELECTRONICS CO. LTD.
发明人： Shim, Dong-ha , Song, In-sang , Kim, Young-il , Park, Sun-hee , Hong, Young-tack , Min, Dong-ki
IPC分类号： G01R21/00 , G01R1/067
CPC分类号： G01R21/00 , G01R1/06772
摘要： An RF power sensor for measuring power for an RF signal using capacitance includes a substrate preferably formed of a semiconductor, such as silicon or of a dielectric substance, a fixture part fixed to the substrate and forming a signal line and ground lines that transmit RF signals, and a bridge connected to the ground lines and floating over the signal line, wherein the bridge is driven by an external driving force, and the external driving force induces capacitance between the bridge and the signal line. Accordingly, power for an RF signal can be measured through the capacitance between the signal line and the bridge. The RF power sensor facilitates matchings, reduces insertion loss, and can be used in a wide bandwidth because it is based on transmission lines having characteristic impedance. Further, high power can be measured depending upon bridge designs.
摘要翻译：用于测量使用电容的RF信号的功率的RF功率传感器包括优选地由诸如硅或介电物质的半导体形成的衬底，固定到衬底并形成信号线的固定部分和发射RF信号的接地线以及连接到地线并跨越信号线的桥，其中桥由外部驱动力驱动，并且外部驱动力引起桥与信号线之间的电容。因此，可以通过信号线和桥之间的电容来测量RF信号的功率。 RF功率传感器有利于匹配，减少插入损耗，并且可以在宽带宽中使用，因为它基于具有特征阻抗的传输线。此外，可以根据桥梁设计来测量高功率。

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