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41. 发明授权

US08367495B2 Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material 有权
标题翻译：用于形成具有形成在高K栅极电介质材料上的含金属栅电极的CMOS晶体管的方法
公开(公告)号：US08367495B2
公开(公告)日：2013-02-05
申请号：US12749112
申请日：2010-03-29
申请人： Sven Beyer , Markus Lenski , Richard Carter , Klaus Hempel
发明人： Sven Beyer , Markus Lenski , Richard Carter , Klaus Hempel
IPC分类号： H01L21/8238
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/84 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/7833
摘要： During the formation of sophisticated gate electrode structures, a replacement gate approach may be applied in which plasma assisted etch processes may be avoided. To this end, one of the gate electrode structures may receive an intermediate etch stop liner, which may allow the replacement of the placeholder material and the adjustment of the work function in a later manufacturing stage. The intermediate etch stop liner may not negatively affect the gate patterning sequence.
摘要翻译：在复杂的栅电极结构的形成期间，可以应用替代栅极方法，其中可以避免等离子体辅助蚀刻工艺。为此，栅极电极结构之一可以接收中间蚀刻停止衬垫，其可以允许在稍后的制造阶段更换占位符材料和调整功能。中间蚀刻停止衬垫可能不会对栅极图案化顺序产生负面影响。

42. 发明申请

US20110266625A1 Maintaining Integrity of a High-K Gate Stack After Embedding a Stressor Material by Using a Liner 审中-公开
标题翻译：通过使用衬垫嵌入应力材料后，保持高K栅极堆叠的完整性
公开(公告)号：US20110266625A1
公开(公告)日：2011-11-03
申请号：US12963253
申请日：2010-12-08
申请人： Richard Carter , Sven Beyer , Markus Lenski , Patrick Press
发明人： Richard Carter , Sven Beyer , Markus Lenski , Patrick Press
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/6656 , H01L21/28247 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/84 , H01L29/165 , H01L29/4966 , H01L29/517 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： Gate failures in sophisticated high-k metal gate electrode structures formed in an early manufacturing stage may be reduced by forming a protective liner material after the incorporation of a strain-inducing semiconductor alloy and prior to performing any critical wet chemical processes. In this manner, attacks in the sensitive gate materials after the incorporation of the strain-inducing semiconductor material may be avoided, without influencing the further processing of the device. In this manner, very sophisticated circuit designs may be applied in sophisticated gate first approaches.
摘要翻译：在早期制造阶段形成的复杂的高k金属栅电极结构中的栅极故障可以通过在引入应变诱导半导体合金之后并且在执行任何关键的湿化学工艺之前形成保护性衬垫材料来减少。以这种方式，可以避免在引入应变诱导半导体材料之后在敏感栅极材料中的攻击，而不影响器件的进一步处理。以这种方式，非常复杂的电路设计可以应用于复杂的门第一方法。

43. 发明申请

US20100327373A1 UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A METAL SPECIES PRIOR TO GATE PATTERNING 有权
标题翻译：通过在门控图案之前扩散金属物种调节放大晶体管的阈值电压来均质高K金属栅极堆叠
公开(公告)号：US20100327373A1
公开(公告)日：2010-12-30
申请号：US12787461
申请日：2010-05-26
申请人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
发明人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659
摘要： Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.
摘要翻译：在基本上相同的构造的基础上对N沟道晶体管和P沟道晶体管的复杂的栅电极结构进行构图，然而，可以在早期制造阶段完成功函数调整。为此，在将期望的功函数金属物质并入高k电介质材料中之后去除扩散层和覆盖层材料，随后沉积公共栅层堆叠并随后构图。

44. 发明申请

US20100193872A1 WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM 有权
标题翻译：通过使用LANTHANUM在晶体管制造后的高K门电极结构中的工作功能调整
公开(公告)号：US20100193872A1
公开(公告)日：2010-08-05
申请号：US12691192
申请日：2010-01-21
申请人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
发明人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L27/088 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.
摘要翻译：高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如作为氮化钛。为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

45. 发明申请

US20060281256A1 Self-aligned cell integration scheme 失效
标题翻译：自对准单元集成方案
公开(公告)号：US20060281256A1
公开(公告)日：2006-12-14
申请号：US11312849
申请日：2005-12-20
申请人： Richard Carter , Hemanshu Bhatt , Shiqun Gu , Peter Burke , James Elmer , Sey-Shing Sun , Byung-Sung Kwak , Verne Hornback
发明人： Richard Carter , Hemanshu Bhatt , Shiqun Gu , Peter Burke , James Elmer , Sey-Shing Sun , Byung-Sung Kwak , Verne Hornback
IPC分类号： H01L21/336
CPC分类号： H01L51/0018 , B82Y10/00 , H01L27/283 , H01L51/0048 , H01L51/0545 , Y10S977/742
摘要： A method of forming a self-aligned logic cell. A nanotube layer is formed over the bottom electrode. A clamp layer is formed over the nanotube layer. The clamp layer covers the nanotube layer, thereby protecting the nanotube layer. A dielectric layer is formed over the clamp layer. The dielectric layer is etched. The clamp layer provides an etch stop and protects the nanotube layer. The clamp layer is etched with an isotropic etchant that etches the clamp layer underneath the dielectric layer, creating an overlap of the dielectric layer, and causing a self-alignment between the clamp layer and the dielectric layer. A spacer layer is formed over the nanotube layer. The spacer layer is etched except for a ring portion around the edge of the dielectric layer. The nanotube layer is etched except for portions that are underlying at least one of the clamp layer, the dielectric layer, and the spacer layer, thereby causing a self-alignment between the clamp layer, the overlap to the dielectric layer, the spacer layer, and the nanotube layer.
摘要翻译：一种形成自对准逻辑单元的方法。在底部电极上形成纳米管层。在纳米管层上形成夹层。夹层覆盖纳米管层，从而保护纳米管层。在钳位层上形成电介质层。蚀刻介电层。钳位层提供蚀刻停止并保护纳米管层。用各向同性蚀刻剂蚀刻钳夹层，蚀刻介质层下方的夹层，产生电介质层的重叠，并引起钳位层和电介质层之间的自对准。在纳米管层上形成间隔层。除了围绕电介质层的边缘的环形部分之外，蚀刻间隔层。除了夹持层，电介质层和间隔层中的至少一个的部分以外，蚀刻纳米管层，从而导致夹紧层之间的自对准，与电介质层的重叠，间隔层，和纳米管层。

46. 发明申请

US20060011994A1 Damascene replacement metal gate process with controlled gate profile and length using Si1-xGex as sacrificial material 有权
标题翻译：使用Si1-xGex作为牺牲材料的具有受控栅极轮廓和长度的镶嵌金属栅极工艺
公开(公告)号：US20060011994A1
公开(公告)日：2006-01-19
申请号：US10889901
申请日：2004-07-13
申请人： Hong Lin , Wai Lo , Sey-Shing Sun , Richard Carter
发明人： Hong Lin , Wai Lo , Sey-Shing Sun , Richard Carter
IPC分类号： H01L29/76
CPC分类号： H01L29/66545 , H01L21/28079 , H01L21/28123 , H01L21/32134 , H01L21/32137
摘要： A method of forming a metal gate in a wafer. PolySi1-xGex and polysilicon are used to form a tapered groove. Gate oxide, PolySi1-xGex, and polysilicon is deposited on a wafer. A resist pattern is formed. A portion of the polysilicon, PolySi1-xGex, and gate oxide is removed to provide a tapered profile. The resist is removed; a dielectric liner is deposited, and then at least a portion of the dielectric liner is removed, thereby exposing the polysilicon and leaving the dielectric liner in contact with the polysilicon, PolyS1-xGex, and gate oxide. A dielectric is deposited, and a portion is removed thereby exposing the polysilicon. The polysilicon, PolySi1-xGex, and gate oxide is removed from inside the dielectric liner, thereby leaving a tapered gate groove. Metal is then deposited in the groove.
摘要翻译：一种在晶片中形成金属栅极的方法。多晶硅1-x x Ge x S和多晶硅用于形成锥形槽。栅极氧化物，多晶硅1-x x Ge x，并且多晶硅沉积在晶片上。形成抗蚀剂图案。去除多晶硅的一部分，多晶硅1-x N x N x N和栅极氧化物以提供锥形轮廓。去除抗蚀剂; 沉积电介质衬垫，然后去除电介质衬垫的至少一部分，从而暴露多晶硅并使电介质衬垫与多晶硅接触，PolyS 1-x Ge x 和/或栅极氧化物。沉积电介质，一部分被去除，从而暴露多晶硅。从电介质衬垫的内部去除多晶硅，多晶硅1 x x Ge x x和栅极氧化物，从而留下锥形栅极沟槽。然后将金属沉积在凹槽中。

47. 发明申请

US20050108303A1 Remote backup and restore technique 审中-公开
标题翻译：远程备份和恢复技术
公开(公告)号：US20050108303A1
公开(公告)日：2005-05-19
申请号：US10698674
申请日：2003-10-31
申请人： Richard Carter
发明人： Richard Carter
IPC分类号： G06F17/30
CPC分类号： G06F11/1464 , G06F11/1469
摘要： In one embodiment, a method for remote data backup and restoration includes creating a signature tag that is associated with a track stored in a memory of a digital entertainment unit, transmitting the signature tag to a repair facility, and authenticating the track based upon the signature tag.
摘要翻译：在一个实施例中，用于远程数据备份和恢复的方法包括创建与存储在数字娱乐单元的存储器中的轨道相关联的签名标签，将签名标签发送到维修设施，以及基于签名认证该轨道标签。

48. 发明申请

US20050085652A1 Preparation and purification of synthetic capsaicin 审中-公开
标题翻译：合成辣椒素的制备与纯化
公开(公告)号：US20050085652A1
公开(公告)日：2005-04-21
申请号：US10821473
申请日：2004-04-08
申请人： Wei Chen , Premchandran Ramiya , Ronald Burch , Richard Carter , Timothy Anderson , Sharon McIlvain , Heping Zhang
发明人： Wei Chen , Premchandran Ramiya , Ronald Burch , Richard Carter , Timothy Anderson , Sharon McIlvain , Heping Zhang
IPC分类号： A61K31/05 , A61K31/16 , A61K31/165 , A61K31/5415 , A61K31/551 , A61K45/06 , C07C51/36 , C07C231/02 , C07C233/20 , C07D201/00
CPC分类号： C07C231/02 , A61K31/05 , A61K31/16 , A61K31/165 , A61K31/5415 , A61K31/551 , A61K45/06 , C07C51/36 , A61K2300/00 , C07C57/03 , C07C233/20
摘要： The present invention provides methods for synthesizing the trans isomer of capsaicin and/or capsaicin-like compounds by utilizing a process wherein the trans geometry is set from the beginning of the synthesis reaction and carried through the entire synthesis process.
摘要翻译：本发明提供了通过利用反应几何形式从合成反应开始设定并通过整个合成过程进行的方法来合成辣椒素和/或辣椒素样化合物的反式异构体的方法。

49. 发明申请

US20050019436A1 Injectable capsaicin 审中-公开
标题翻译：注射辣椒素
公开(公告)号：US20050019436A1
公开(公告)日：2005-01-27
申请号：US10742621
申请日：2003-12-18
申请人： Ronald Burch , Richard Carter , Jeff Lazar
发明人： Ronald Burch , Richard Carter , Jeff Lazar
IPC分类号： A61K9/00 , A61K31/05 , A61K31/16 , A61K31/165 , A61K31/5415 , A61K31/551 , A61K36/81 , A61K45/06 , A61K47/10 , C07C231/02 , C07C233/20 , A61K35/78
CPC分类号： C07C231/02 , A61K9/0019 , A61K31/05 , A61K31/16 , A61K31/165 , A61K31/5415 , A61K31/551 , A61K36/81 , A61K45/06 , A61K47/10 , A61K2300/00 , C07C233/20
摘要： The present invention provides compositions and methods for relieving pain at a site in a human or animal in need thereof by administering at a discrete site in a human or animal in need thereof a dose of capsaicin in an amount effective to denervate a discrete site without eliciting an effect outside the discrete location, the dose of capsaicin ranging from 1 μg to 3000 μg.
摘要翻译：本发明提供了通过在有需要的人或动物的离散部位施用一定剂量的有效去离胺化位点而不引发的辣椒素的剂量来减轻有需要的人或动物的部位的疼痛的组合物和方法在离散位置之外的效果，辣椒素的剂量范围从1杯至3000杯。

50. 发明授权

US06491147B1 Method for attaching a clutch pedal assembly to a vehicle for adaptation from an automatic transmission to a manual transmission application 有权
标题翻译：一种用于将离合器踏板组件附接到车辆以从自动变速器适应到手动变速器应用的方法
公开(公告)号：US06491147B1
公开(公告)日：2002-12-10
申请号：US09703969
申请日：2000-11-01
申请人： John S Kargilis , Richard Carter , Syed T Razzacki
发明人： John S Kargilis , Richard Carter , Syed T Razzacki
IPC分类号： B60K4124
CPC分类号： G05G1/30 , B60K23/02
摘要： A method for attaching a clutch pedal assembly to a vehicle with a brake pedal assembly for a manual transmission conversion from an automatic transmission application including extension of a brake support shaft laterally from an existing brake pedal assembly and through a clutch pedal supporting bushing and then further outward into engagement with a wall of the vehicle. Specifically, the outward end of the support shaft is insertably extended through a hole in the wall of the vehicle for supporting that end portion of the shaft. The method further includes utilizing a metal cutting edge or tip on the outward end of the support shaft such that rotation of the support shaft can drill the support hole in the vehicle wall.
摘要翻译：一种将离合器踏板组件附接到车辆的方法，其具有用于从自动变速器应用进行手动变速器转换的制动踏板组件，包括制动支撑轴从现有的制动踏板组件侧向延伸并且通过离合器踏板支撑衬套，然后进一步向外与车辆的墙壁接合。具体地，支撑轴的外端可插入地延伸穿过车辆的壁中的孔，用于支撑轴的该端部。该方法还包括在支撑轴的外端上利用金属切割边缘或尖端，使得支撑轴的旋转可钻出车辆壁中的支撑孔。

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