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41. 发明申请

US20100111121A1 LASER GAIN MEDIUM AND LASER OSCILLATOR USING THE SAME 有权
标题翻译：激光增益中和激光振荡器使用它
公开(公告)号：US20100111121A1
公开(公告)日：2010-05-06
申请号：US12509090
申请日：2009-07-24
申请人： Kenji Takeshita , Shinya Ishii , Tomoko Saito , Junji Kawanaka , Noriaki Miyanaga , Kazuo Imazaki , Taku Saiki , Hiroaki Furuse
发明人： Kenji Takeshita , Shinya Ishii , Tomoko Saito , Junji Kawanaka , Noriaki Miyanaga , Kazuo Imazaki , Taku Saiki , Hiroaki Furuse
IPC分类号： H01S3/13
CPC分类号： H01S3/0604 , H01S3/025 , H01S3/0405 , H01S3/042 , H01S3/0612 , H01S3/0621 , H01S3/07 , H01S3/08 , H01S3/08072 , H01S3/08095 , H01S3/0813 , H01S3/09408 , H01S3/10061 , H01S3/1643 , H01S3/2316 , H01S3/2333
摘要： A laser gain medium includes an optical medium configured to transmit a laser beam and having an incident face, a first face, a second face opposing to the first face; and gain media configured to amplify the laser beam while reflecting the laser beam. At least one of the gain media is joined on a first face of the optical medium as a first face gain medium, and at least one of the remaining gain media is joined on a second face of the optical medium as a second face gain medium. The laser beam is incident into the optical medium, and is amplified by the first face gain medium and the second face gain medium while being alternately reflected by the first face gain medium and the second face gain medium.
摘要翻译：激光增益介质包括配置为透射激光束并具有入射面，第一面，与第一面相对的第二面的光学介质; 并且增益介质配置成放大激光束同时反射激光束。所述增益介质中的至少一个作为第一面增益介质连接在所述光介质的第一面上，并且所述剩余增益介质中的至少一个作为所述第二面增益介质连接在所述光介质的第二面上。激光束入射到光学介质中，并且被第一面增益介质和第二面增益介质放大，同时被第一面增益介质和第二面增益介质交替反射。

42. 发明授权

US07515168B2 Laser scanning optical apparatus having exclusive optical elements at varying distances from receiving surfaces 有权
标题翻译：激光扫描光学装置具有距离接收表面不同距离的专用光学元件
公开(公告)号：US07515168B2
公开(公告)日：2009-04-07
申请号：US11519769
申请日：2006-09-13
申请人： Kenji Takeshita , Atsushi Ohata , Hajime Taniguchi
发明人： Kenji Takeshita , Atsushi Ohata , Hajime Taniguchi
IPC分类号： B41J15/14 , B41J27/00
CPC分类号： B41J2/473 , G02B26/123
摘要： A laser scanning optical apparatus wherein a plural number of beams are deflected by one polygon mirror and are scanned on respective corresponding photosensitive drums via a scanning optical system. The scanning optical system has a first scanning lens which transmits all the beams, exclusive second scanning lenses which transmit exclusively the respective beams and plane mirrors for reflecting the beams. The second scanning lenses are located such that at least one of the second scanning lenses is at a distance from the corresponding photosensitive drum on which the beam transmitted by the at least one of the second scanning lenses is scanned and that another second scanning lens is at another distance from the corresponding photosensitive drum on which the beams transmitted by the another second scanning lens is scanned. For example, at least one of the exclusive optical elements is at a distance from the corresponding photosensitive drum, and the other exclusive optical elements are at another distance from the respective corresponding photosensitive drums. Alternatively, the exclusive optical elements are at mutually different distances from the respective corresponding photosensitive drums.
摘要翻译：一种激光扫描光学装置，其中多个光束被一个多面镜偏转并且经由扫描光学系统在相应的对应的感光鼓上进行扫描。扫描光学系统具有透射所有光束的第一扫描透镜，专门发送各个光束的专用第二扫描透镜和用于反射光束的平面镜。第二扫描透镜被定位成使得至少一个第二扫描透镜距离相应的感光鼓一个距离，在该感光鼓上扫描由至少一个第二扫描透镜发射的光束，并且另一个第二扫描透镜处于距离相应的感光鼓的另一个距离，其上扫描由另一个第二扫描透镜传输的光束。例如，至少一个专用光学元件距离对应的感光鼓有一定距离，而其他专用光学元件距离各个相应的感光鼓相距一定距离。或者，专用光学元件与相应的相应的感光鼓相距不同的距离。

43. 发明申请

US20080210377A1 UNIFORM ETCH SYSTEM 有权
标题翻译：均匀蚀刻系统
公开(公告)号：US20080210377A1
公开(公告)日：2008-09-04
申请号：US12055212
申请日：2008-03-25
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty , Peter Loewenhardt
IPC分类号： C23F1/08
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

44. 发明授权

US07371332B2 Uniform etch system 有权
标题翻译：均匀刻蚀系统
公开(公告)号：US07371332B2
公开(公告)日：2008-05-13
申请号：US10642083
申请日：2003-08-14
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： H01L21/306
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

45. 发明授权

US06897156B2 Vacuum plasma processor method 失效
标题翻译：真空等离子体处理器方法
公开(公告)号：US06897156B2
公开(公告)日：2005-05-24
申请号：US10347363
申请日：2003-01-21
申请人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
发明人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
IPC分类号： H05H1/46 , B01J3/00 , B01J19/08 , H01J37/32 , H01L21/3065 , H01L21/302
CPC分类号： H01J37/321
摘要： 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.
摘要翻译： 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过在腔室的顶部处的电介质窗口向等离子体提供电磁场，从而激发腔室中的可电离气体到等离子体。两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。在线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

46. 发明授权

US06709547B1 Moveable barrier for multiple etch processes 有权
标题翻译：多个蚀刻工艺的可移动屏障
公开(公告)号：US06709547B1
公开(公告)日：2004-03-23
申请号：US09347583
申请日：1999-06-30
申请人： Tuqiang Ni , Kenji Takeshita , Brian K. McMillin
发明人： Tuqiang Ni , Kenji Takeshita , Brian K. McMillin
IPC分类号： C23F100
CPC分类号： H01L21/67069 , Y10S156/915
摘要： A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.
摘要翻译：提供了一种用于等离子体处理装置的处理室，其中在化学驱动和离子驱动工艺中保持蚀刻均匀性。处理室利用可相对于晶片的位置改变的势垒。在化学驱动的过程中，可以建立阻挡层，以便基本上防止中性反应物从晶片周边外的区域的扩散。在离子驱动过程中，阻挡层可以移动（例如，退出），以便不损害离子驱动的蚀刻。

47. 发明授权

US08068523B2 Laser gain medium and laser oscillator using the same 有权
标题翻译：激光增益介质和激光振荡器使用相同
公开(公告)号：US08068523B2
公开(公告)日：2011-11-29
申请号：US12509090
申请日：2009-07-24
申请人： Kenji Takeshita , Shinya Ishii , Tomoko Saito , Junji Kawanaka , Noriaki Miyanaga , Kazuo Imazaki , Taku Saiki , Hiroaki Furuse
发明人： Kenji Takeshita , Shinya Ishii , Tomoko Saito , Junji Kawanaka , Noriaki Miyanaga , Kazuo Imazaki , Taku Saiki , Hiroaki Furuse
IPC分类号： H01S3/13 , H01S3/091 , H01S3/092 , H01S3/08
CPC分类号： H01S3/0604 , H01S3/025 , H01S3/0405 , H01S3/042 , H01S3/0612 , H01S3/0621 , H01S3/07 , H01S3/08 , H01S3/08072 , H01S3/08095 , H01S3/0813 , H01S3/09408 , H01S3/10061 , H01S3/1643 , H01S3/2316 , H01S3/2333
摘要： A laser gain medium includes an optical medium configured to transmit a laser beam and having an incident face, a first face, a second face opposing to the first face; and gain media configured to amplify the laser beam while reflecting the laser beam. At least one of the gain media is joined on a first face of the optical medium as a first face gain medium, and at least one of the remaining gain media is joined on a second face of the optical medium as a second face gain medium. The laser beam is incident into the optical medium, and is amplified by the first face gain medium and the second face gain medium while being alternately reflected by the first face gain medium and the second face gain medium.
摘要翻译：激光增益介质包括配置为透射激光束并具有入射面，第一面，与第一面相对的第二面的光学介质; 并且增益介质配置成放大激光束同时反射激光束。所述增益介质中的至少一个作为第一面增益介质连接在所述光介质的第一面上，并且所述剩余增益介质中的至少一个作为所述第二面增益介质连接在所述光介质的第二面上。激光束入射到光学介质中，并且被第一面增益介质和第二面增益介质放大，同时被第一面增益介质和第二面增益介质交替反射。

48. 发明授权

US07773641B2 Optically pumped disk-type solid state laser oscillator and optically pumped disk-type solid state laser system 有权
标题翻译：光泵浦式固态激光振荡器和光泵式盘式固态激光系统
公开(公告)号：US07773641B2
公开(公告)日：2010-08-10
申请号：US12003178
申请日：2007-12-20
申请人： Kenji Takeshita , Shinya Ishii
发明人： Kenji Takeshita , Shinya Ishii
IPC分类号： H01S3/30 , H01S3/07 , H01S3/08
CPC分类号： H01S3/09415 , H01S3/042 , H01S3/0604 , H01S3/0621 , H01S3/0627 , H01S3/0915 , H01S3/094038
摘要： An optically pumped disk type solid state laser oscillator includes: a cylindrical shape thin film laser gain medium having a through-hole; a ring mirror whose surface is opposing to a side surface of the thin film laser gain medium; a conical mirror arranged in the through-hole and reflects a light from the ring mirror to a direction perpendicular to the thin film laser gain medium where an output mirror is arranged. The ring mirror, the conical mirror and the output mirror compose a resonator for oscillating a laser beam to be outputted from the output mirror.
摘要翻译：光泵式固态激光振荡器包括：具有通孔的圆柱形薄膜激光增益介质; 表面与薄膜激光增益介质的侧表面相对的环形镜; 布置在所述通孔中的圆锥镜，并将来自所述环形镜的光反射到与设置有输出镜的所述薄膜激光增益介质垂直的方向。环形镜，锥形镜和输出镜组成用于振荡从输出镜输出的激光束的谐振器。

49. 发明授权

US07517801B1 Method for selectivity control in a plasma processing system 有权
标题翻译：等离子体处理系统中的选择性控制
公开(公告)号：US07517801B1
公开(公告)日：2009-04-14
申请号：US10881410
申请日：2004-06-29
申请人： Kenji Takeshita
发明人： Kenji Takeshita
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76811
摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.
摘要翻译：一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。该方法包括将基板放置在等离子体处理系统的等离子体处理室中。该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。该方法还包括从蚀刻剂源气体冲击等离子体。此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号，偏置RF信号具有在约45MHz和约75MHz之间的偏置RF频率。偏置RF信号还具有偏置RF功率分量，该偏置RF功率分量被配置为使得蚀刻特征被蚀刻以对于高于预定义的选择性阈值的衬底的第二层的蚀刻选择性。

50. 发明授权

US07226869B2 Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing 有权
标题翻译：在等离子体蚀刻处理期间保护硅或碳化硅电极表面免受形态修饰的方法
公开(公告)号：US07226869B2
公开(公告)日：2007-06-05
申请号：US10975946
申请日：2004-10-29
申请人： Kenji Takeshita , Tsuyoshi Aso , Seiji Kawaguchi , Thomas McClard , Wan-Lin Chen , Enrico Magni , Michael Kelly , Michelle Lupan , Robert Hefty
发明人： Kenji Takeshita , Tsuyoshi Aso , Seiji Kawaguchi , Thomas McClard , Wan-Lin Chen , Enrico Magni , Michael Kelly , Michelle Lupan , Robert Hefty
IPC分类号： H01L21/302
CPC分类号： B08B7/0035 , B05D1/62 , H01J37/32559 , H01L21/31116
摘要： Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.
摘要翻译：提供了在等离子体处理室的硅或碳化硅电极上形成保护性聚合物涂层的方法。相对于暴露于等离子体和气态反应物的组分，聚合物涂层为电极的下表面提供保护。可以在清洁室的过程中或在用于蚀刻室中的半导体衬底的工艺期间执行这些方法。

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