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1. 发明授权

US06897156B2 Vacuum plasma processor method 失效
标题翻译：真空等离子体处理器方法
公开(公告)号：US06897156B2
公开(公告)日：2005-05-24
申请号：US10347363
申请日：2003-01-21
申请人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
发明人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
IPC分类号： H05H1/46 , B01J3/00 , B01J19/08 , H01J37/32 , H01L21/3065 , H01L21/302
CPC分类号： H01J37/321
摘要： 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.
摘要翻译： 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过在腔室的顶部处的电介质窗口向等离子体提供电磁场，从而激发腔室中的可电离气体到等离子体。两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。在线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

2. 发明授权

US06531029B1 Vacuum plasma processor apparatus and method 有权
标题翻译：真空等离子体处理装置及方法
公开(公告)号：US06531029B1
公开(公告)日：2003-03-11
申请号：US09607326
申请日：2000-06-30
申请人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
发明人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
IPC分类号： H01L213065
CPC分类号： H01J37/321
摘要： 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic; fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.
摘要翻译： 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过提供电磁而将腔室中的可电离气体激发到等离子体; 通过室顶部的电介质窗到等离子体的场。两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。在线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

3. 发明授权

US06514378B1 Method for improving uniformity and reducing etch rate variation of etching polysilicon 有权
标题翻译：改善蚀刻多晶硅的均匀性和降低蚀刻速率变化的方法
公开(公告)号：US06514378B1
公开(公告)日：2003-02-04
申请号：US09540549
申请日：2000-03-31
申请人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin , Wenli Collison
发明人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin , Wenli Collison
IPC分类号： H05H100
CPC分类号： H01J37/32642 , H01L21/32137
摘要： An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine-containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.
摘要翻译：一种用于在用含氟气体清洁和/或等离子体蚀刻室的调节之后以最小等离子体蚀刻速率变化连续处理一系列半导体衬底的装置和方法。该方法包括以下步骤：（a）将半导体衬底放置在等离子体蚀刻室中的衬底支撑件上，（b）在室中保持真空，（c）通过向腔室中提供蚀刻气体来蚀刻衬底的暴露表面并且激励蚀刻气体以在腔室中形成等离子体，（d）从腔室移除衬底; 并且（e）通过重复步骤（ad）连续地蚀刻腔室中的附加衬底，蚀刻步骤通过使围绕衬底的碳化硅边缘环上的H和Br的复合速率以足以抵消速率其中Br在基底上被消耗。该方法可以使用纯HBr或HBr与其他气体的组合进行。

4. 发明授权

US06617257B2 Method of plasma etching organic antireflective coating 有权
标题翻译：等离子体蚀刻有机抗反射涂层的方法
公开(公告)号：US06617257B2
公开(公告)日：2003-09-09
申请号：US09820737
申请日：2001-03-30
申请人： Tuqiang Ni , Weinan Jiang , Conan Chiang , Frank Y. Lin , Chris Lee , Dai N. Lee
发明人： Tuqiang Ni , Weinan Jiang , Conan Chiang , Frank Y. Lin , Chris Lee , Dai N. Lee
IPC分类号： H01L21302
CPC分类号： B81C1/00595 , H01L21/31138 , H01L21/31144 , H01L21/67069 , H01L21/76807 , H01L21/7681 , H01L21/76838
摘要： A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O2-free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO2 and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.
摘要翻译：半导体制造方法，其中用无氧的含硫气体蚀刻有机抗反射涂层，其提供相对于下层的选择性和/或最小化上覆光致抗蚀剂的横向蚀刻速率以维持由光致抗蚀剂限定的临界尺寸。蚀刻剂气体可以包括SO 2和诸如Ar或He的载气和任选的其它气体例如HBr的添加物。该方法对于在形成结构如镶嵌结构中蚀刻0.25微米和较小的接触或通孔开口是有用的。

5. 发明授权

US08480913B2 Plasma processing method and apparatus with control of plasma excitation power 有权
公开(公告)号：US08480913B2
公开(公告)日：2013-07-09
申请号：US13172917
申请日：2011-06-30
申请人： Tuqiang Ni , Weinan Jiang , Frank Y. Lin , Chung-Ho Huang
发明人： Tuqiang Ni , Weinan Jiang , Frank Y. Lin , Chung-Ho Huang
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/3299
摘要： The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.

6. 发明授权

US06709547B1 Moveable barrier for multiple etch processes 有权
标题翻译：多个蚀刻工艺的可移动屏障
公开(公告)号：US06709547B1
公开(公告)日：2004-03-23
申请号：US09347583
申请日：1999-06-30
申请人： Tuqiang Ni , Kenji Takeshita , Brian K. McMillin
发明人： Tuqiang Ni , Kenji Takeshita , Brian K. McMillin
IPC分类号： C23F100
CPC分类号： H01L21/67069 , Y10S156/915
摘要： A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.
摘要翻译：提供了一种用于等离子体处理装置的处理室，其中在化学驱动和离子驱动工艺中保持蚀刻均匀性。处理室利用可相对于晶片的位置改变的势垒。在化学驱动的过程中，可以建立阻挡层，以便基本上防止中性反应物从晶片周边外的区域的扩散。在离子驱动过程中，阻挡层可以移动（例如，退出），以便不损害离子驱动的蚀刻。

7. 发明授权

US06461974B1 High temperature tungsten etching process 有权
标题翻译：高温钨蚀刻工艺
公开(公告)号：US06461974B1
公开(公告)日：2002-10-08
申请号：US09680320
申请日：2000-10-06
申请人： Tuqiang Ni , Kenji Takeshita , Thomas Choi
发明人： Tuqiang Ni , Kenji Takeshita , Thomas Choi
IPC分类号： H01L21302
CPC分类号： H01L21/32139 , C23F4/00 , H01L21/31116 , H01L21/32136
摘要： A method of etching a tungsten film, comprising the steps of supporting a semiconductor substrate having a tungsten film thereon on a substrate support in an interior of a plasma etcher, supplying process gas to the interior of the plasma etcher, energizing the process gas into a plasma state, etching the tungsten film by exposing the substrate to the plasma, and heating the substrate to a temperature of at least 100° C. during the etching step. The etching step can include a low temperature main etch below 100° C. followed by a high temperature overetch above 100° C., the process gas including a fluorine containing gas during the main etch and a chlorine containing gas during the overetch. The tungsten film can be located over a dielectric film which serves as a stop layer during the etching step. The tungsten film can be pure tungsten and the dielectric layer can be a silicon oxide film having a thickness of 200 Å or less.
摘要翻译：一种蚀刻钨膜的方法，包括以下步骤：在等离子体蚀刻器内部的衬底支撑件上支撑其上具有钨膜的半导体衬底，将工艺气体供给到等离子体蚀刻器的内部，将工艺气体激励成等离子体状态，通过将衬底暴露于等离子体来蚀刻钨膜，并且在蚀刻步骤期间将衬底加热至至少100℃的温度。蚀刻步骤可以包括低于100℃的低温主蚀刻，然后高于100℃的高温过蚀刻，在主蚀刻期间工艺气体包括含氟气体，在过蚀刻期间包括含氯气体。钨膜可以位于在蚀刻步骤期间用作停止层的电介质膜上。钨膜可以是纯钨，并且电介质层可以是厚度为或以下的氧化硅膜。

8. 发明申请

US20130008605A1 MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER 有权
标题翻译：多站解密反应离子室
公开(公告)号：US20130008605A1
公开(公告)日：2013-01-10
申请号：US13620654
申请日：2012-09-14
申请人： Gerald Yin , Tuqiang Ni , Jinyuan Chen , Xueyu Qian
发明人： Gerald Yin , Tuqiang Ni , Jinyuan Chen , Xueyu Qian
IPC分类号： H01L21/3065
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32183 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01J37/32889 , H01J37/32899 , H01J2237/334 , H01L21/67161 , H01L21/67173 , H01L21/6719
摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.
摘要翻译：提供了具有等离子体隔离和频率隔离的串联处理区室。对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。室体在两个处理区之间周围和两者之间被磨碎。使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。等离子体约束环也用于防止等离子体串扰。接地的公共排气路径连接到单个真空泵。

9. 发明授权

US08336488B2 Multi-station plasma reactor with multiple plasma regions 有权
标题翻译：具有多个等离子体区域的多工位等离子体反应器
公开(公告)号：US08336488B2
公开(公告)日：2012-12-25
申请号：US11961718
申请日：2007-12-20
申请人： Aihua Chen , Yijun Liu , Jinyuan Chen , Lee Luo , Tuqiang Ni , Gerald Yin , Henry Ho
发明人： Aihua Chen , Yijun Liu , Jinyuan Chen , Lee Luo , Tuqiang Ni , Gerald Yin , Henry Ho
IPC分类号： C23C16/505
CPC分类号： C23C16/54 , C23C16/36 , C23C16/505 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.
摘要翻译：等离子体室被构造成具有在其中限定多个处理站的室主体。多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

10. 发明申请

US20090139453A1 MULTI-STATION PLASMA REACTOR WITH MULTIPLE PLASMA REGIONS 有权
标题翻译：多级等离子体反应器与多个等离子体区域
公开(公告)号：US20090139453A1
公开(公告)日：2009-06-04
申请号：US11961718
申请日：2007-12-20
申请人： AIHUA CHEN , Yijun Liu , Jinyuan Chen , Lee Luo , Tuqiang Ni , Gerald Yin , Henry Ho
发明人： AIHUA CHEN , Yijun Liu , Jinyuan Chen , Lee Luo , Tuqiang Ni , Gerald Yin , Henry Ho
IPC分类号： C23C16/505
CPC分类号： C23C16/54 , C23C16/36 , C23C16/505 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.
摘要翻译：等离子体室被构造成具有在其中限定多个处理站的室主体。多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

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