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    • 41. 发明申请
    • Workpiece processing attachment and sewing machine
    • 工件加工附件和缝纫机
    • US20100212562A1
    • 2010-08-26
    • US12656237
    • 2010-01-21
    • Akifumi NakashimaDaisuke Ueda
    • Akifumi NakashimaDaisuke Ueda
    • D05B23/00D05B21/00D05B69/00D05B29/00
    • D05B55/06D05B23/00D05D2303/00
    • A workpiece processing attachment detachably attached to a sewing machine including a presser foot, a presser bar having the presser foot detachably attached to its lower end, a presser bar vertically moving mechanism, a sewing needle, a needle clamp having the sewing needle detachably attached thereto, a needle bar having the needle clamp attached thereto, and a needle bar vertically moving mechanism, the workpiece processing attachment, including a body detachably attached to the lower end of the presser bar; a connecting element capable of being connected to the needle clamp and movable up and down with the needle bar being moved up and down by the needle bar vertically moving mechanism; a needle penetrating the workpiece to form a hole in the workpiece; and a needle vertically moving mechanism moving the needle up and down by the up and down movement of the connecting element.
    • 一种可拆卸地安装在缝纫机上的工件加工附件,该缝纫机包括压脚,压脚可拆卸地安装在其下端,压杆垂直移动机构,缝纫针,具有可拆卸地连接到其上的缝纫针的针夹 具有附接有针夹的针杆和针杆上下移动机构,所述工件加工附件包括可拆卸地附接到所述按压杆的下端的主体; 连接元件,其能够连接到针夹并且可通过针杆上下移动机构上下移动而上下移动; 针穿过工件在工件上形成一个孔; 并且针垂直移动机构通过连接元件的上下移动来上下移动针。
    • 46. 发明授权
    • Via hole machining for microwave monolithic integrated circuits
    • 微波单片集成电路的通孔加工
    • US07674719B2
    • 2010-03-09
    • US11194419
    • 2005-08-01
    • Ming LiXinbing LiuHiroyuki SakaiMasaaki NishijimaDaisuke Ueda
    • Ming LiXinbing LiuHiroyuki SakaiMasaaki NishijimaDaisuke Ueda
    • H01L21/302
    • B23K26/0624B23K26/40B23K2103/50
    • A method for forming a via in a sapphire substrate with a laser machining system that includes an ultrafast pulsed laser source. The sapphire substrate is provided. Pulses of laser light are substantially focused to a beam spot on the first surface of the sapphire substrate such that each focused pulse of laser light ablates a volume of the sapphire substrate having a depth less than the substrate thickness. The beam spot of the focused laser light pulses is scanned over a via portion of the first surface of the sapphire substrate. The sapphire substrate is moved in a direction substantially normal to the first surface to control the volume of the sapphire substrate ablated by each pulse of laser light to be substantially constant. The pulsing and scanning steps are repeated until the via is formed extending from the first surface to the second surface of the sapphire substrate.
    • 一种在具有包括超快脉冲激光源的激光加工系统的蓝宝石衬底中形成通孔的方法。 提供蓝宝石衬底。 激光的脉冲基本上聚焦到蓝宝石衬底的第一表面上的束斑上,使得每个聚焦的激光脉冲消除了具有小于衬底厚度的深度的蓝宝石衬底的体积。 聚焦激光脉冲的束斑在蓝宝石衬底的第一表面的通孔部分上扫描。 蓝宝石衬底沿着基本上垂直于第一表面的方向移动,以控制由每个激光脉冲消融的蓝宝石衬底的体积基本恒定。 重复脉冲和扫描步骤,直到形成从蓝宝石衬底的第一表面延伸到第二表面的通孔。
    • 47. 发明授权
    • Electromagnetic wave generation apparatus and manufacturing method of electromagnetic wave generation apparatus
    • 电磁波发生装置及电磁波发生装置的制造方法
    • US07595498B2
    • 2009-09-29
    • US11195812
    • 2005-08-03
    • Shinichi TakigawaDaisuke Ueda
    • Shinichi TakigawaDaisuke Ueda
    • H01L29/12
    • H01J21/04H01J9/244H01L31/03048H01L31/09Y02E10/544Y02P70/521
    • The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.
    • 本发明提供一种紧凑型并产生高功率太赫兹波的电磁波产生装置。 电磁波发生装置包括:基板; 具有光电子发射部分的第一电极,形成在所述基板的一个表面上; 形成在所述基板的表面上的第二电极; 电源,其在第一电极和第二电极之间施加电压,使得第二电极的电位变得高于第一电极的电位; 以及辐射时间调制光和波长调制光中的一个的光源,并且在该装置中,光照射部分(a)在照射光时发射电子,并且(b)被放置在来自光的入射光的位置 源极进入并发射出的电子运行到第二电极的电子入射平面。
    • 49. 发明申请
    • METHOD FOR CONTROLLING HIGH-FREQUENCY RADIATOR
    • 控制高频散热器的方法
    • US20080266012A1
    • 2008-10-30
    • US12109804
    • 2008-04-25
    • Kazuhiro YahataTakashi UnoHiroyuki SakaiTsuyoshi TanakaDaisuke Ueda
    • Kazuhiro YahataTakashi UnoHiroyuki SakaiTsuyoshi TanakaDaisuke Ueda
    • H03L7/099
    • H03H7/40H05B6/686H05B6/705Y02B40/146
    • A method for controlling a high-frequency radiator includes the steps of: (a) applying a high-frequency radiation through the solid-state oscillator and the antenna; (b) sensing part of the high-frequency radiation returned from the antenna to the solid-state oscillator; (c) adjusting radiation/propagation conditions for the high-frequency radiation on the basis of the sensed results in the step (b), the high-frequency radiation propagating from the solid-state oscillator to the antenna; and (d) after the step (c), applying the high-frequency radiation through the solid-state oscillator and the antenna to a target object. In the step (c), the oscillation frequency of the solid-state oscillator, the power of the high-frequency radiation applied by the solid-state oscillator, the power supply voltage supplied to the solid-state oscillator, the impedance match between the output impedance of the solid-state oscillator and the impedance of the antenna, or any other condition is changed.
    • 一种用于控制高频辐射器的方法包括以下步骤:(a)通过固态振荡器和天线施加高频辐射; (b)感测从天线返回到固态振荡器的一部分高频辐射; (c)基于步骤(b)中检测到的结果,调整从固态振荡器传播到天线的高频辐射来调整高频辐射的辐射/传播条件; 和(d)在步骤(c)之后,将高频辐射通过固态振荡器和天线施加到目标对象。 在步骤(c)中,固态振荡器的振荡频率,由固态振荡器施加的高频辐射的功率,提供给固态振荡器的电源电压, 固体振荡器的输出阻抗和天线的阻抗,或任何其他条件改变。