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1. 发明申请

US20070023763A1 Semiconductor light-emitting device and method for fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070023763A1
公开(公告)日：2007-02-01
申请号：US11492130
申请日：2006-07-25
申请人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
发明人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/38
摘要： A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.
摘要翻译：半导体发光器件包括发光层和形成在发光层上并由含有颗粒的树脂材料制成的光提取层。包含在光提取层中的每个颗粒的最大尺寸小于穿过光提取层的发射光的波长。

2. 发明授权

US07439552B2 Semiconductor light-emitting device and method for fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07439552B2
公开(公告)日：2008-10-21
申请号：US11492130
申请日：2006-07-25
申请人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
发明人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/38
摘要： A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.
摘要翻译：半导体发光器件包括发光层和形成在发光层上并由含有颗粒的树脂材料制成的光提取层。包含在光提取层中的每个颗粒的最大尺寸小于穿过光提取层的发射光的波长。

3. 发明授权

US07170108B2 Semiconductor light-emitting device and method for fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07170108B2
公开(公告)日：2007-01-30
申请号：US10817800
申请日：2004-04-06
申请人： Daisuke Ueda , Shinichi Takigawa
发明人： Daisuke Ueda , Shinichi Takigawa
IPC分类号： H01L29/732 , H01L31/072
CPC分类号： B82Y20/00 , H01L33/145 , H01L33/32 , H01S5/2214 , H01S5/2215 , H01S5/34333
摘要： An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III–V nitride semiconductor with oxygen atoms.
摘要翻译：由n型GaN构成的n型缓冲层，由n型AlGaN构成的n型覆盖层，由n型GaN构成的n型光限制层，由未掺杂的GaInN构成的单量子阱活性层在由蓝宝石构成的基板上形成由p型GaN构成的p型光限制层，由p型AlGaN构成的p型覆盖层和由p型GaN构成的p型接触层。形成在p型覆层的上部并且在p型接触层的两侧形成脊部的电流阻挡层由通过将构成III- 具有氧原子的氮化物半导体。

4. 发明申请

US20060028110A1 Electromagnetic wave generation apparatus and manufacturing method of electromagnetic wave generation apparatus 有权
公开(公告)号：US20060028110A1
公开(公告)日：2006-02-09
申请号：US11195812
申请日：2005-08-03
申请人： Shinichi Takigawa , Daisuke Ueda
发明人： Shinichi Takigawa , Daisuke Ueda
IPC分类号： H01J9/02
CPC分类号： H01J21/04 , H01J9/244 , H01L31/03048 , H01L31/09 , Y02E10/544 , Y02P70/521
摘要： The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.

5. 发明授权

US06746948B2 Method for fabricating semiconductor light-emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US06746948B2
公开(公告)日：2004-06-08
申请号：US10243711
申请日：2002-09-16
申请人： Daisuke Ueda , Shinichi Takigawa
发明人： Daisuke Ueda , Shinichi Takigawa
IPC分类号： H01L2128
CPC分类号： B82Y20/00 , H01L33/145 , H01L33/32 , H01S5/2214 , H01S5/2215 , H01S5/34333
摘要： An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III-V nitride semiconductor with oxygen atoms.
摘要翻译：由n型GaN构成的n型缓冲层，由n型AlGaN构成的n型覆盖层，由n型GaN构成的n型光限制层，由未掺杂的GaInN构成的单量子阱活性层在由蓝宝石构成的基板上形成由p型GaN构成的p型光限制层，由p型AlGaN构成的p型覆盖层和由p型GaN构成的p型接触层。形成在p型覆层的上部并且在p型接触层的两侧形成脊部的电流阻挡层由通过将构成III- 具有氧原子的氮化物半导体。

6. 发明授权

US07595498B2 Electromagnetic wave generation apparatus and manufacturing method of electromagnetic wave generation apparatus 有权
标题翻译：电磁波发生装置及电磁波发生装置的制造方法
公开(公告)号：US07595498B2
公开(公告)日：2009-09-29
申请号：US11195812
申请日：2005-08-03
申请人： Shinichi Takigawa , Daisuke Ueda
发明人： Shinichi Takigawa , Daisuke Ueda
IPC分类号： H01L29/12
CPC分类号： H01J21/04 , H01J9/244 , H01L31/03048 , H01L31/09 , Y02E10/544 , Y02P70/521
摘要： The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.
摘要翻译：本发明提供一种紧凑型并产生高功率太赫兹波的电磁波产生装置。电磁波发生装置包括：基板; 具有光电子发射部分的第一电极，形成在所述基板的一个表面上; 形成在所述基板的表面上的第二电极; 电源，其在第一电极和第二电极之间施加电压，使得第二电极的电位变得高于第一电极的电位; 以及辐射时间调制光和波长调制光中的一个的光源，并且在该装置中，光照射部分（a）在照射光时发射电子，并且（b）被放置在来自光的入射光的位置源极进入并发射出的电子运行到第二电极的电子入射平面。

7. 发明申请

US20110204418A1 TERAHERTZ WAVE RADIATING ELEMENT 失效
标题翻译： TERAHERTZ波浪辐射元件
公开(公告)号：US20110204418A1
公开(公告)日：2011-08-25
申请号：US13051455
申请日：2011-03-18
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Shinichi Takigawa , Tsuyoshi Tanaka
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Shinichi Takigawa , Tsuyoshi Tanaka
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/41725 , H01L29/42316
摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.
摘要翻译：太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。

8. 发明申请

US20060125948A1 Solid-state imaging element, solid-state imaging device, and method for fabricating the same 有权
标题翻译：固态成像元件，固态成像器件及其制造方法
公开(公告)号：US20060125948A1
公开(公告)日：2006-06-15
申请号：US11011042
申请日：2004-12-15
申请人： Kenji Orita , Shinichi Takigawa
发明人： Kenji Orita , Shinichi Takigawa
IPC分类号： H04N5/225
CPC分类号： H04N5/335 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327 , H04N9/045
摘要： Each of solid-state imaging elements 11a, 11b and 11c includes a photoelectric conversion element and a photonic crystal which is formed on the photoelectric conversion element. The photonic crystal has a refractive index periodic structure including: a periodic structure in the stacking direction which is created by stacking low refractive layers 1 and high refractive layers 2 alternately, and a periodic structure in the in-plane direction which is created by concentric similar shapes (circles or polygons). Both RGB color separation and light condensing can be achieved all at once using this photonic crystal only. There are two methods for fabricating the photonic crystal: lithography and etching for fabricating a tubular photonic crystal having a central cavity and similar-shaped cavities around the central cavity which form a concentric pattern in the in-plane direction; and autocloning for fabricating, on a base having the concentric pattern, a photonic crystal having a refractive index periodic structure in both the in-plane direction and the stacking direction.
摘要翻译：固态成像元件11a，11b和11c中的每一个包括形成在光电转换元件上的光电转换元件和光子晶体。光子晶体具有折射率周期性结构，其包括：通过交替堆叠低折射层1和高折射层2而产生的堆叠方向上的周期性结构，以及由同心相似产生的在面内方向上的周期性结构形状（圆或多边形）。只能使用这种光子晶体，可以同时实现RGB色彩分离和聚光。制造光子晶体有两种方法：用于制造管状光子晶体的光刻和蚀刻，所述管状光子晶体具有围绕中心腔的中心腔和类似形状的空腔，其在面内方向上形成同心图案; 并且在具有同心图案的基底上制造在面内方向和层叠方向上具有折射率周期性结构的光子晶体的高压灭菌器。

9. 发明授权

US08304812B2 Terahertz wave radiating element 失效
标题翻译：太赫兹波辐射元件
公开(公告)号：US08304812B2
公开(公告)日：2012-11-06
申请号：US13051455
申请日：2011-03-18
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Shinichi Takigawa , Tsuyoshi Tanaka
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Shinichi Takigawa , Tsuyoshi Tanaka
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/41725 , H01L29/42316
摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.
摘要翻译：太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。

10. 发明授权

US07420610B2 Solid-state imaging element, solid-state imaging device, and method for fabricating the same 有权
标题翻译：固态成像元件，固态成像器件及其制造方法
公开(公告)号：US07420610B2
公开(公告)日：2008-09-02
申请号：US11011042
申请日：2004-12-15
申请人： Kenji Orita , Shinichi Takigawa
发明人： Kenji Orita , Shinichi Takigawa
IPC分类号： H04N5/225 , H04N3/14 , H04N5/335 , H04N9/04 , H04N9/083
CPC分类号： H04N5/335 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327 , H04N9/045
摘要： A solid state-imaging element including photoelectric conversion element and an optical element such as a photonic crystal is disclosed. The optical element is formed on the photoelectric conversion element, and has a refractive index periodic structure made up of stacked layers of materials with different refractive indices. The refractive index periodic structure is defined by multiple layers along a stacking direction and by a group of concentric similar shapes along an in-plane direction. The optical element may be fabricated via lithography and etching, or an autocloning technique. A solid state-imaging device including an arrangement of several solid-state imaging elements is also disclosed.
摘要翻译：公开了包括光电转换元件和诸如光子晶体的光学元件的固态成像元件。光学元件形成在光电转换元件上，并且具有折射率周期性结构，其由折射率不同的材料的堆叠层构成。折射率周期结构由层叠方向上的多个层和沿着面内方向的一组同心相似的形状限定。光学元件可以通过光刻和蚀刻或高压灭菌技术制造。还公开了包括若干固态成像元件的布置的固态成像器件。

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