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1. 发明申请

US20080266012A1 METHOD FOR CONTROLLING HIGH-FREQUENCY RADIATOR 审中-公开
标题翻译：控制高频散热器的方法
公开(公告)号：US20080266012A1
公开(公告)日：2008-10-30
申请号：US12109804
申请日：2008-04-25
申请人： Kazuhiro Yahata , Takashi Uno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Kazuhiro Yahata , Takashi Uno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03L7/099
CPC分类号： H03H7/40 , H05B6/686 , H05B6/705 , Y02B40/146
摘要： A method for controlling a high-frequency radiator includes the steps of: (a) applying a high-frequency radiation through the solid-state oscillator and the antenna; (b) sensing part of the high-frequency radiation returned from the antenna to the solid-state oscillator; (c) adjusting radiation/propagation conditions for the high-frequency radiation on the basis of the sensed results in the step (b), the high-frequency radiation propagating from the solid-state oscillator to the antenna; and (d) after the step (c), applying the high-frequency radiation through the solid-state oscillator and the antenna to a target object. In the step (c), the oscillation frequency of the solid-state oscillator, the power of the high-frequency radiation applied by the solid-state oscillator, the power supply voltage supplied to the solid-state oscillator, the impedance match between the output impedance of the solid-state oscillator and the impedance of the antenna, or any other condition is changed.
摘要翻译：一种用于控制高频辐射器的方法包括以下步骤：（a）通过固态振荡器和天线施加高频辐射; （b）感测从天线返回到固态振荡器的一部分高频辐射; （c）基于步骤（b）中检测到的结果，调整从固态振荡器传播到天线的高频辐射来调整高频辐射的辐射/传播条件; 和（d）在步骤（c）之后，将高频辐射通过固态振荡器和天线施加到目标对象。在步骤（c）中，固态振荡器的振荡频率，由固态振荡器施加的高频辐射的功率，提供给固态振荡器的电源电压，固体振荡器的输出阻抗和天线的阻抗，或任何其他条件改变。

2. 发明申请

US20070279155A1 Film bulk acoustic resonator, filter, and fabrication method thereof 失效
标题翻译：薄膜体声波谐振器，滤波器及其制造方法
公开(公告)号：US20070279155A1
公开(公告)日：2007-12-06
申请号：US11806123
申请日：2007-05-30
申请人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
发明人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
IPC分类号： H03H9/56
CPC分类号： H03H9/175 , H03H3/02 , H03H9/589 , H03H2003/025
摘要： A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.
摘要翻译：薄膜体声波谐振器包括基板; 形成在基板上的声反射器部分; 以及包括依次堆叠在声反射器部分上的下电极，压电膜和上电极的声谐振器部分。与声共振器部分接触的声反射器部分的最上层具有根平均平方粗糙度约为1nm以下。

3. 发明授权

US07501068B2 Method for manufacturing resonator 失效
标题翻译：制造谐振器的方法
公开(公告)号：US07501068B2
公开(公告)日：2009-03-10
申请号：US11109864
申请日：2005-04-20
申请人： Atsuhiko Kanda , Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Atsuhiko Kanda , Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： C23F1/00
CPC分类号： H03H3/02 , H03H9/02102 , H03H9/173 , H03H9/174 , H03H9/175 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T156/10
摘要： A method for manufacturing a resonator of the present invention includes the steps of (a) forming a resonator film including a piezoelectric film made of piezoelectric material and (b) preparing a resonator substrate for supporting the resonator film. The method further comprises the step of (c) bonding the resonator film formed in the step (a) and the resonator substrate prepared in the step (b).
摘要翻译：制造本发明的谐振器的方法包括以下步骤：（a）形成包括由压电材料制成的压电膜的谐振膜，（b）制备用于支撑谐振膜的谐振器基片。该方法还包括以下步骤：（c）将步骤（a）中形成的谐振膜和步骤（b）中制备的谐振器基片接合。

4. 发明申请

US20060038636A1 Resonator and filter using the same 失效
标题翻译：谐振器和滤波器使用相同
公开(公告)号：US20060038636A1
公开(公告)日：2006-02-23
申请号：US11194460
申请日：2005-08-02
申请人： Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda , Atsuhiko Kanda
发明人： Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda , Atsuhiko Kanda
IPC分类号： H03H9/58
CPC分类号： H03H9/173 , H03H3/04 , H03H9/172 , H03H9/564 , H03H2003/021
摘要： An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.
摘要翻译：声谐振器包括：基板; 一种谐振膜，其被支撑在基板的主表面上方，分别包括压电膜和一对顶电极和底电极，它们分别形成在压电膜的顶表面和底表面的一部分上通过压电膜相互面对; 以及形成在基板的主表面上以从下方支撑谐振膜的支撑体。谐振腔被设置在基板和谐振器膜之间的区域的一部分的下方，在谐振膜的至少一部分之上，其中顶部电极和底部电极彼此重合，并且在另一部分中设置隔离腔所述区域不存在支撑和谐振腔。

5. 发明授权

US07619493B2 Bulk acoustic resonator and filter element 失效
标题翻译：体积声共振器和滤芯
公开(公告)号：US07619493B2
公开(公告)日：2009-11-17
申请号：US11590804
申请日：2006-11-01
申请人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
发明人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
IPC分类号： H03H9/15 , H03H9/54
CPC分类号： H03H9/175 , H03H9/02125 , H03H9/589 , H03H9/605
摘要： A bulk acoustic resonator has an acoustic reflector portion formed on a substrate and including one or more low acoustic impedance layers and one or more high acoustic impedance layers having a higher acoustic impedance than the low acoustic impedance layer which are disposed in stacked relation and an acoustic resonator portion formed on the acoustic reflector portion and having a piezoelectric film. At least one of the low acoustic impedance layers is made of silicon.
摘要翻译：体声波谐振器具有形成在基板上的声反射器部分，并且包括一个或多个低声阻抗层和一个或多个具有比低声阻抗层更高的声阻抗层的高声阻抗层，它们以堆叠关系设置，谐振器部分形成在声反射器部分上并具有压电膜。低声阻抗层中的至少一个由硅制成。

6. 发明授权

US07456707B2 Resonator and filter using the same 失效
标题翻译：谐振器和滤波器使用相同
公开(公告)号：US07456707B2
公开(公告)日：2008-11-25
申请号：US11194460
申请日：2005-08-02
申请人： Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda , Atsuhiko Kanda
发明人： Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda , Atsuhiko Kanda
IPC分类号： H03H9/54
CPC分类号： H03H9/173 , H03H3/04 , H03H9/172 , H03H9/564 , H03H2003/021
摘要： An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.
摘要翻译：声谐振器包括：基板; 一种谐振膜，其被支撑在基板的主表面上方，分别包括压电膜和一对顶电极和底电极，它们分别形成在压电膜的顶表面和底表面的一部分上通过压电膜相互面对; 以及形成在基板的主表面上以从下方支撑谐振膜的支撑体。谐振腔被设置在基板和谐振器膜之间的区域的一部分的下方，在谐振膜的至少一部分之上，其中顶部电极和底部电极彼此重合，并且在另一部分中设置隔离腔所述区域不存在支撑和谐振腔。

7. 发明申请

US20070080757A1 Composite filter chip 审中-公开
标题翻译：复合滤芯
公开(公告)号：US20070080757A1
公开(公告)日：2007-04-12
申请号：US11544635
申请日：2006-10-10
申请人： Kazuhiro Yahata , Takashi Uno , Naohiro Tsurumi , Hiroyuki Sakai
发明人： Kazuhiro Yahata , Takashi Uno , Naohiro Tsurumi , Hiroyuki Sakai
IPC分类号： H03H9/70 , H03H9/72
CPC分类号： H03H9/706 , H01L2224/16225 , H01L2224/48091 , H03H9/0571 , H03H9/0576 , H03H9/72 , H03H9/725 , H01L2924/00014
摘要： A composite filter chip includes a stacked chip made by stacking a first chip and a second chip. The first chip has a first filter circuit formed on the main surface thereof. The second chip has a second filter circuit formed on the main surface thereof.
摘要翻译：复合滤波器芯片包括通过堆叠第一芯片和第二芯片制成的堆叠芯片。第一芯片具有形成在其主表面上的第一滤波电路。第二芯片具有形成在其主表面上的第二滤波电路。

8. 发明申请

US20050255234A1 Method for manufacturing resonator 失效
标题翻译：制造谐振器的方法
公开(公告)号：US20050255234A1
公开(公告)日：2005-11-17
申请号：US11109864
申请日：2005-04-20
申请人： Atsuhiko Kanda , Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Atsuhiko Kanda , Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/312 , H01L41/319 , H03H3/02 , H03H9/00 , H03H9/02 , H03H9/17
CPC分类号： H03H3/02 , H03H9/02102 , H03H9/173 , H03H9/174 , H03H9/175 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T156/10
摘要： A method for manufacturing a resonator of the present invention includes the steps of (a) forming a resonator film including a piezoelectric film made of piezoelectric material and (b) preparing a resonator substrate for supporting the resonator film. The method further comprises the step of (c) bonding the resonator film formed in the step (a) and the resonator substrate prepared in the step (b).
摘要翻译：制造本发明的谐振器的方法包括以下步骤：（a）形成包括由压电材料制成的压电膜的谐振膜，（b）制备用于支撑谐振膜的谐振器基片。该方法还包括以下步骤：（c）将步骤（a）中形成的谐振膜和步骤（b）中制备的谐振器基片接合。

9. 发明授权

US07760049B2 Film bulk acoustic resonator, filter, and fabrication method thereof 失效
标题翻译：薄膜体声波谐振器，滤波器及其制造方法
公开(公告)号：US07760049B2
公开(公告)日：2010-07-20
申请号：US11806123
申请日：2007-05-30
申请人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
发明人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
IPC分类号： H03H9/00
CPC分类号： H03H9/175 , H03H3/02 , H03H9/589 , H03H2003/025
摘要： A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.
摘要翻译：薄膜体声波谐振器包括基板; 形成在基板上的声反射器部分; 以及包括依次堆叠在声反射器部分上的下电极，压电膜和上电极的声谐振器部分。与声共振器部分接触的声反射器部分的最上层具有根平均平方粗糙度约为1nm以下。

10. 发明申请

US20070096851A1 Bulk acoustic resonator and filter element 失效
标题翻译：体积声共振器和滤芯
公开(公告)号：US20070096851A1
公开(公告)日：2007-05-03
申请号：US11590804
申请日：2006-11-01
申请人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
发明人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
IPC分类号： H03H9/56
CPC分类号： H03H9/175 , H03H9/02125 , H03H9/589 , H03H9/605
摘要： A bulk acoustic resonator has an acoustic reflector portion formed on a substrate and including one or more low acoustic impedance layers and one or more high acoustic impedance layers having a higher acoustic impedance than the low acoustic impedance layer which are disposed in stacked relation and an acoustic resonator portion formed on the acoustic reflector portion and having a piezoelectric film. At least one of the low acoustic impedance layers is made of silicon.
摘要翻译：体声波谐振器具有形成在基板上的声反射器部分，并且包括一个或多个低声阻抗层和一个或多个具有比低声阻抗层更高的声阻抗层的高声阻抗层，它们以堆叠关系设置，谐振器部分形成在声反射器部分上并具有压电膜。低声阻抗层中的至少一个由硅制成。

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