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1. 发明授权

US07750354B2 Solid-state imaging device and manufacturing method for the same 有权
标题翻译：固态成像装置及其制造方法相同
公开(公告)号：US07750354B2
公开(公告)日：2010-07-06
申请号：US12187720
申请日：2008-08-07
申请人： Masahiro Kasano , Yuichi Inaba , Takumi Yamaguchi
发明人： Masahiro Kasano , Yuichi Inaba , Takumi Yamaguchi
IPC分类号： H01L29/20
CPC分类号： G02B5/201 , G01J3/513 , G02B5/285 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L31/02162 , H01L31/02164 , H01L31/02165
摘要： Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要翻译：光电转换器被二维布置在半导体衬底中。在半导体基板和光电转换器上依次形成平坦化层，遮光膜，进一步的平坦化层和聚光透镜。遮光膜在对应于光电转换装置的位置处具有孔。透射光的红色，绿色或蓝色波长分量的多层干涉滤光片设置在孔中。

2. 发明授权

US07741724B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07741724B2
公开(公告)日：2010-06-22
申请号：US12060673
申请日：2008-04-01
申请人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
发明人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00
摘要： This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.
摘要翻译：本发明旨在提供一种具有能够缓和施加到接合垫的机械应力的结构的半导体器件。具有通孔的第三层间绝缘膜形成在第二层间绝缘膜上以覆盖第三布线层。在通孔中形成第三导电层。第三层间绝缘膜由多个六边形柱状层间绝缘膜的阵列构成。并且通孔和第三导电层形成为围绕每个六边形柱状层间绝缘膜。形成通过第三导电层与第三布线层连接的第四布线层。第四布线层在本发明的实施例中形成最上层的布线层，并且用作接合焊盘。

3. 发明申请

US20080237877A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080237877A1
公开(公告)日：2008-10-02
申请号：US12060673
申请日：2008-04-01
申请人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
发明人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
IPC分类号： H01L23/538
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00
摘要： This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.
摘要翻译：本发明旨在提供一种具有能够缓和施加到接合垫的机械应力的结构的半导体器件。具有通孔的第三层间绝缘膜形成在第二层间绝缘膜上以覆盖第三布线层。在通孔中形成第三导电层。第三层间绝缘膜由多个六边形柱状层间绝缘膜的阵列构成。并且通孔和第三导电层形成为围绕每个六边形柱状层间绝缘膜。形成通过第三导电层与第三布线层连接的第四布线层。第四布线层在本发明的实施例中形成最上层的布线层，并且用作接合焊盘。

4. 发明申请

US20070188635A1 Solid-state imaging device and camera 审中-公开
标题翻译：固态成像装置和相机
公开(公告)号：US20070188635A1
公开(公告)日：2007-08-16
申请号：US11633583
申请日：2006-12-05
申请人： Takumi Yamaguchi , Yuichi Inaba , Daisuke Ueda
发明人： Takumi Yamaguchi , Yuichi Inaba , Daisuke Ueda
IPC分类号： H04N9/04
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A solid-state imaging device 101 is composed of a transparent film 204, a color filter 205, a planarizing film 207, and a plurality of microlenses 208 that are sequentially formed on a semiconductor substrate 201. A photodiode 202 is formed in a surface of the semiconductor substrate 201 that is closer to the transparent film 204. A light shielding film 203 is formed in a surface of the transparent film 204 that is closer to the semiconductor substrate 201. Color filters 205 respectively corresponding to two adjacent pixels are partitioned by a light shielding wall 206. The light shielding wall 206 is a λ/4 multilayer film that reflects visible light.
摘要翻译：固态成像装置101由依次形成在半导体基板201上的透明膜204，滤色器205，平坦化膜207和多个微透镜208构成。光电二极管202形成在更靠近透明膜204的半导体衬底201.在透明膜204的更靠近半导体衬底201的表面中形成遮光膜203.分别对应于两个相邻像素的滤色器205被分隔开遮光壁206.遮光壁206是反射可见光的λ/ 4多层膜。

5. 发明申请

US20060285005A1 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US20060285005A1
公开(公告)日：2006-12-21
申请号：US11452952
申请日：2006-06-15
申请人： Yuichi Inaba , Masahiro Kasano
发明人： Yuichi Inaba , Masahiro Kasano
IPC分类号： H04N5/225
CPC分类号： H04N5/335 , H01L27/14621 , H01L27/14625 , H04N9/045
摘要： A solid-state imaging device is composed of a P-type semiconductor layer, an interlayer insulation film, a multilayer interference filter and condenser lenses which have been successively laminated on an N-type semiconductor layer. A photodiode, in which N-type impurities have been ion-implanted, is formed per pixel in the P-type semiconductor layer on the interlayer insulation film side. The multilayer interference filter has a composition including λ/4 multilayer films and a plurality of spacer layers sandwiched therebetween. The λ/4 multilayer films are composed of alternately laminated monotitanium dioxide layers and monosilicon dioxide layers that have the same optical thickness. The spacer layers have optical thicknesses corresponding to colors of light they are to transmit. A spacer layer is not included in a green region. Instead, two monotitanium dioxide layers, each of which constitutes a λ/4 multilayer film, are adjoined to make a monotitanium dioxide layer with an optical thickness of λ/2.
摘要翻译：固态成像装置由已连续层叠在N型半导体层上的P型半导体层，层间绝缘膜，多层干涉滤光片和聚光透镜构成。在层间绝缘膜侧的P型半导体层中，每像素形成已经离子注入了N型杂质的光电二极管。多层干涉滤光器具有包括λ/ 4多层膜和夹在其间的多个间隔层的组成。 λ/ 4多层膜由具有相同光学厚度的交替层叠的单二氧化钛层和单二氧化硅层构成。间隔层具有对应于它们要发射的光的颜色的光学厚度。间隔层不包括在绿色区域中。相反，两个单一二氧化钛层（其各自构成λ/ 4多层膜）被邻接以制造光学厚度为λ/ 2的单二氧化钛层。

6. 发明申请

US20120235038A1 INFRARED GAS DETECTOR AND INFRARED GAS MEASURING DEVICE 审中-公开
标题翻译：红外气体探测器和红外测量气体测量装置
公开(公告)号：US20120235038A1
公开(公告)日：2012-09-20
申请号：US13380810
申请日：2010-06-22
申请人： Takayuki Nishikawa , Yoshifumi Watabe , Yuichi Inaba , Takahiko Hirai , Hiroaki Kitamura
发明人： Takayuki Nishikawa , Yoshifumi Watabe , Yuichi Inaba , Takahiko Hirai , Hiroaki Kitamura
IPC分类号： G01N21/59 , G01J5/00
CPC分类号： G01N21/359 , G01J5/0014 , G01J5/02 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/08 , G01J5/0803 , G01J5/0862 , G01J5/12 , G01J5/20 , G01N21/3504
摘要： An infrared gas detector includes an infrared reception member, a package configured to accommodate the infrared reception member, and an optical filter. The infrared reception member includes a plurality of thermal infrared detection elements each configured to detect infrared based on heat caused by received infrared. The thermal infrared detection elements are placed side by side. The package is provided with a window opening configured to allow the infrared reception member to receive infrared. The optical filter is attached to the package so as to cover the window opening, and includes a plurality of filter elements respectively corresponding to the plurality of the thermal infrared detection elements. Each of the filter elements includes a filter substrate made of an infrared transparent material, a transmission filter configured to transmit infrared of a selected wavelength, and a cut-off filter configured to absorb infrared of a wavelength longer than the selected wavelength. The transmission filter and the cut-off filter are formed over the filter substrate. The filter substrate is thermally coupled to the package. The transmission filters of the respective filter elements are configured to transmit infrared of the different selected wavelengths.
摘要翻译：红外线气体检测器包括红外线接收部件，被构造成容纳红外线接收部件的封装体和滤光器。红外线接收构件包括多个热红外线检测元件，每个热红外线检测元件被配置为基于由接收到的红外线引起的热量来检测红外线。热红外线检测元件并排放置。该包装件设置有一个窗口，该开口被配置为允许红外线接收件接收红外线。滤光器附接到封装以覆盖窗口，并且包括分别对应于多个热红外线检测元件的多个滤光元件。每个滤光元件包括由红外线透明材料制成的滤光片基板，被配置为透射所选择的波长的红外线的透射滤光器和被配置为吸收长于所选波长的波长的红外线的截止滤光器。透过滤波器和截止滤波器形成在滤波器基板上。过滤器基板热耦合到封装。各个滤波器元件的透射滤波器被配置成透射不同选择波长的红外线。

7. 发明申请

US20110310472A1 INFRARED OPTICAL FILTER AND MANUFACTURING METHOD OF THE INFRARED OPTICAL FILTER 审中-公开
标题翻译：红外光滤波器的红外光滤波器和制造方法
公开(公告)号：US20110310472A1
公开(公告)日：2011-12-22
申请号：US13201180
申请日：2010-02-04
申请人： Takahiko Hirai , Hiroaki Kitamura , Yuichi Inaba , Yoshifumi Watabe , Takayuki Nishikawa , Takahiro Sono
发明人： Takahiko Hirai , Hiroaki Kitamura , Yuichi Inaba , Yoshifumi Watabe , Takayuki Nishikawa , Takahiro Sono
IPC分类号： F21V9/04 , B05D5/06 , B29D11/00
CPC分类号： G02B5/281 , C23C14/081 , C23C14/083 , C23C14/10
摘要： The infrared optical filter of the present invention comprises a substrate formed of an infrared transmitting material and a plurality of filter parts arranged side by side on one surface side of the substrate. Each filter part includes: a first λ/4 multilayer film in which two kinds of thin films having mutually different refractive indices but an identical optical film thickness are alternately stacked; a second λ/4 multilayer film in which the two kinds of thin films are alternately stacked, said second λ/4 multilayer film being formed on the opposite side of the first λ/4 multilayer film from the substrate side, and; and a wavelength selection layer interposed between the first λ/4 multilayer film and the second λ/4 multilayer film, said wavelength selection layer having an optical film thickness different from the optical film thickness of each the thin film according to a desired selection wavelength. A low refractive index material of the first λ/4 multilayer film and the second λ/4 multilayer film is an oxide, and a high refractive index material thereof is a semiconductor material of Ge. A material of the wavelength selection layer is identical to a material of the second thin film from the top of the first λ/4 multilayer film.
摘要翻译：本发明的红外光滤波器包括由红外线透射材料形成的基板和在基板的一个表面侧上并排设置的多个滤光器部件。每个过滤器部分包括：第一λ/ 4多层膜，其中具有相互不同的折射率但相同的光学膜厚度的两种薄膜交替堆叠; 其中两种薄膜交替层叠的第二λ/ 4多层膜，所述第二λ/ 4多层膜从基片侧形成在与第一λ/ 4多层膜相反的一侧上; 以及布置在第一λ/ 4多层膜和第二λ/ 4多层膜之间的波长选择层，所述波长选择层根据期望的选择波长具有与每个薄膜的光学膜厚度不同的光学膜厚度。第一λ/ 4多层膜和第二λ/ 4多层膜的低折射率材料是氧化物，其高折射率材料是Ge的半导体材料。波长选择层的材料与第一λ/ 4多层膜的顶部的第二薄膜的材料相同。

8. 发明授权

US07416915B2 Solid-state imaging device and manufacturing method for the same 有权
标题翻译：固态成像装置及其制造方法相同
公开(公告)号：US07416915B2
公开(公告)日：2008-08-26
申请号：US11330396
申请日：2006-01-12
申请人： Masahiro Kasano , Yuichi Inaba , Takumi Yamaguchi
发明人： Masahiro Kasano , Yuichi Inaba , Takumi Yamaguchi
IPC分类号： H01L31/0216
CPC分类号： G02B5/201 , G01J3/513 , G02B5/285 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L31/02162 , H01L31/02164 , H01L31/02165
摘要： Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要翻译：光电转换器被二维布置在半导体衬底中。在半导体基板和光电转换器上依次形成平坦化层，遮光膜，进一步的平坦化层和聚光透镜。遮光膜在对应于光电转换装置的位置处具有孔。透射光的红色，绿色或蓝色波长分量的多层干涉滤光片设置在孔中。

9. 发明申请

US20080062359A1 Optical interference filter that performs excellent color separation, and liquid crystal display, electroluminescence display and projection display apparatus having the optical interference filter 有权
标题翻译：具有优异的分色性的光干涉滤光器，具有光干涉滤光器的液晶显示器，电致发光显示器和投影显示装置
公开(公告)号：US20080062359A1
公开(公告)日：2008-03-13
申请号：US11898408
申请日：2007-09-12
申请人： Yuichi Inaba , Takumi Yamaguchi , Daisuke Ueda
发明人： Yuichi Inaba , Takumi Yamaguchi , Daisuke Ueda
IPC分类号： G02B1/10 , G02F1/1335 , H01J1/62
CPC分类号： G02B5/285 , G02F2001/133521 , H01L27/322 , H05B33/22
摘要： An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.
摘要翻译：一种光学干涉滤光器，其主要成分是膜元件。该薄膜构件包括多个沿着表面方向离散布置的窗口区域，该多个窗口区域使用光学干涉的作用选择性地发送具有基本上属于可见光谱的波段的光，该多个窗口区域沿离散方向布置在表面方向上，并且一个或多个边界区域使用光学干涉的作用选择性地发射具有基本上属于不可见光谱的不可见光谱的波段的光，所述一个或多个边界区域位于相邻窗口区域之间。

10. 发明授权

US6104738A Semiconductor laser and process for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US6104738A
公开(公告)日：2000-08-15
申请号：US894763
申请日：1997-11-13
申请人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui , Yuichi Inaba
发明人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui , Yuichi Inaba
IPC分类号： H01S5/042 , H01S5/10 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/323 , H01S3/19 , H01S3/08
CPC分类号： H01S5/10 , H01S2301/18 , H01S5/0425 , H01S5/1014 , H01S5/1064 , H01S5/12 , H01S5/1206 , H01S5/1215 , H01S5/1218 , H01S5/1225 , H01S5/1228 , H01S5/20 , H01S5/2036 , H01S5/2275 , H01S5/32391
摘要： In a semiconductor laser device 100, an n-type InGaAsP light confinement layer 2, a multiple quantum well active layer 3, a p-type InGaAsP light confinement layer 4, and a p-type InP cladding layer 5 are formed on an n-type InP substrate 1 to be in a mesa structure extending in stripes along the cavity length direction. Moreover, regions on both sides of this striped mesa are buried with a p-type InP current blocking layer 6 and an n-type InP current blocking layer 7. Furthermore, a p-type InP burying layer 8 and a p-type InGaAsP contact layer 9 are formed thereon. The oscillation wavelength of the semiconductor laser device 100 is around 1.3 .mu.m. The stripe width of the active layer 3 is such that the width W1 at the front end face and the width W2 at the rear end face have a relationship of W1
摘要翻译： PCT No.PCT / JP96 / 03837第 371日期：1997年11月13日 102（e）1997年11月13日PCT PCT 1996年12月26日PCT公布。出版物WO97 / 24787 日期1997年7月10日在半导体激光装置100中，n型InGaAsP光限制层2，多量子阱活性层3，p型InGaAsP光限制层4和p型InP包覆层5为在n型InP衬底1上形成为沿着空腔长度方向以条纹延伸的台面结构。此外，这种条状台面的两侧的区域用p型InP电流阻挡层6和n型InP电流阻挡层7埋设。此外，p型InP掩埋层8和p型InGaAsP接触层9形成在其上。半导体激光装置100的振荡波长约为1.3μm。有源层3的条带宽度使得前端面处的宽度W1和后端面的宽度W2具有W1

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