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    • 41. 发明申请
    • Semiconductor material having bipolar transistor structure and semiconductor device using same
    • 具有双极晶体管结构的半导体材料和使用其的半导体器件
    • US20060180833A1
    • 2006-08-17
    • US10539006
    • 2003-12-16
    • Akira InoueMasahiko HataYasuyuki Kurita
    • Akira InoueMasahiko HataYasuyuki Kurita
    • H01L31/109
    • H01L29/7371H01L29/0821
    • In an epitaxial substrate (20) comprising a collector layer (22), a base layer (23) and an emitter layer (24) formed on a semi-insulating GaAs substrate (21), a hole barrier layer (22C) is provided in the collector layer (22) to prevent influx of holes from the base layer (23), whereby the flow of collector current is suppressed when the collector current density rises and electron velocity is saturated, suppressing thermal runaway of the collector current without a ballast resistance or the like. Also, thermal runaway of the collector current is suppressed by providing an additional layer (2C) for generating, in the conduction band, an electron barrier by means of electrons accumulated in the collector layer (2) when the collector current density rises.
    • 在包括集电极层(22),形成在半绝缘GaAs衬底(21)上的基极层(23)和发射极层(24))的外延衬底(20)中,提供了空穴阻挡层(22C) 在集电体层(22)中,为了防止从基底层(23)流入空穴,由此当集电极电流密度上升,电子速度饱和时,集电极电流的流动受到抑制,抑制了没有镇流器的集电极电流的热失控 电阻等。 此外,通过设置用于在集电极电流密度上升时通过积聚在集电极层(2)中的电子在导带中产生电子势垒的附加层(2C)来抑制集电极电流的热失控。
    • 44. 发明授权
    • Method for driving electrooptical device, driving circuit, and electrooptical device, and electronic apparatus
    • 驱动电光装置,驱动电路,电光装置及电子装置的方法
    • US06873319B2
    • 2005-03-29
    • US09937966
    • 2001-01-26
    • Akira InoueAkihiko ItoRyo IshiiSuguru Yamazaki
    • Akira InoueAkihiko ItoRyo IshiiSuguru Yamazaki
    • G09G3/20G09G3/36G09G5/00
    • G09G3/3648G09G3/2025G09G3/3696G09G2300/0814G09G2300/0823
    • The invention provides an electro-optical device capable of a high-quality and high-definition tone display, a driving method thereof, a driving circuit thereof, and electronic equipment using the same. With the invention, one field is divided into a plurality of sub-fields, such that each pixel is turned on or off in each of the sub-fields so that the proportion of the period during which each pixel is turned on to the period during which the associated pixel is turned off within the one field corresponds to the proportion according to the tone data. Further, when each pixel is turned on, either a first voltage which is higher than a constant reference voltage applied to a counter electrode or a second voltage which is lower than the reference voltage is applied to a pixel electrode of the associated pixel, and when the pixel is turned off, a voltage equal to the reference voltage is applied to the pixel electrode of the pixel.
    • 本发明提供一种能够进行高品质和高清晰度色调显示的电光装置,其驱动方法,驱动电路和使用该电光装置的电子设备。 利用本发明,一个场被分成多个子场,使得每个子场中的每个像素被打开或关闭,使得每个像素被打开的周期的比例到 关联像素在一个场内关闭的对应于根据色调数据的比例。 此外,当每个像素导通时,高于施加到对电极的恒定参考电压的第一电压或低于参考电压的第二电压被施加到相关像素的像素电极,并且当 关闭像素,将等于参考电压的电压施加到像素的像素电极。
    • 45. 发明授权
    • Heterojunction field effect transistor
    • 异质结场效应晶体管
    • US06781163B2
    • 2004-08-24
    • US10311293
    • 2002-12-17
    • Takeshi TakagiAkira Inoue
    • Takeshi TakagiAkira Inoue
    • H01L310328
    • H01L29/802H01L21/823807H01L29/1054H01L29/165H01L29/78687
    • A region of an Si layer (15) located between source and drain regions (19 and 20) is an Si body region (21) which contains an n-type impurity of high concentration. An Si layer (16) and an SiGe layer (17) are, in an as grown state, undoped layers into which no n-type impurity is doped. Regions of the Si layer 16 and the SiGe layer (17) located between the source and drain regions (19 and 20) are an Si buffer region (22) and an SiGe channel region (23), respectively, which contain the n-type impurity of low concentration. A region of an Si film (18) located directly under a gate insulating film (12) is an Si cap region (24) into which a p-type impurity (5×1017 atoms·cm−3) is doped. Accordingly, a semiconductor device in which an increase in threshold voltage is suppressed can be achieved.
    • 位于源极和漏极区域(19和20)之间的Si层(15)的区域是包含高浓度的n型杂质的Si体区域(21)。 处于生长状态的Si层(16)和SiGe层(17)是未掺杂n型杂质的未掺杂层。 位于源极和漏极区域(19和20)之间的Si层16和SiGe层(17)的区域分别是包含n型的Si缓冲区(22)和SiGe沟道区(23) 低浓度的杂质。 位于栅极绝缘膜(12)正下方的Si膜(18)的区域是掺杂有p型杂质(5×10 17原子·cm -3)的Si帽区域(24)。 因此,可以实现抑制阈值电压增加的半导体装置。
    • 49. 发明授权
    • High frequency probe for examining electric characteristics of devices
    • 用于检查设备电气特性的高频探头
    • US06617864B2
    • 2003-09-09
    • US09739970
    • 2000-12-20
    • Akira InoueTakayuki KatohTakeshi AsoNaofumi IwamotoTakumi Suetsugu
    • Akira InoueTakayuki KatohTakeshi AsoNaofumi IwamotoTakumi Suetsugu
    • G01R3102
    • G01R1/06772G01R1/06733G01R1/06766
    • A probe whose characteristic impedance can be accurately adjusted to a desired value with the production of a small number of prototypes. The probe includes a first line with a signal terminal to be connected to a signal electrode of a circuit to be measured and at least one first region connected to the signal terminal and to which one end of a chip capacitor is connected, a second line connected to a terminal of the first line and a junction to be connected to a measuring instrument at the remaining terminal, and an impedance matched to a characteristic impedance of the measuring instrument, a ground connector with a ground terminal to be connected to the ground electrode of the circuit to be measured, and at least one second region connected to the ground terminal and on which the remaining terminal of the chip capacitor is mounted in one-to-one correspondence with the first region. The impedance of the probe viewed from the circuit to be measured is provided by the chip capacitor mounted at specified positions within the first region and the second region.
    • 探头的特征阻抗可以通过少量原型的生产精确地调整到所需的值。 探头包括具有要连接到待测电路的信号电极的信号端子的第一线路和连接到信号端子的至少一个第一区域,并且与芯片电容器的一端连接,第二线路连接 连接到第一线路的端子和与其余端子上的测量仪器连接的接点以及与测量仪器的特性阻抗匹配的阻抗;接地端子的接地连接器,用于连接到接地电极的接地端子 要测量的电路以及连接到接地端子的至少一个第二区域,其中片状电容器的剩余端子与第一区域一一对应地安装在该至少一个第二区域上。 从要测量的电路观察的探头的阻抗由安装在第一区域和第二区域内的特定位置的芯片电容器提供。
    • 50. 发明授权
    • Scanning probe microscope
    • 扫描探头显微镜
    • US06242736B1
    • 2001-06-05
    • US09116319
    • 1998-07-15
    • Akihiko HonmaTakeshi UmemotoAkira Inoue
    • Akihiko HonmaTakeshi UmemotoAkira Inoue
    • G01N1312
    • G01Q30/04Y10S977/85
    • A scanning probe microscope for scanning a probe needle in proximity to a surface of a sample in XY-axis directions while moving at least one of the probe and the sample in a Z-axis direction has a plurality of band-pass filters for passing a plurality of band-pass signals by extracting predetermined frequency bands different one another from a surface geometry signal output by a probe. An image memory stores the respective band-pass signals and corresponding positions on the sample surface, and a color image outputting device outputs a color image by treating each of the respective band-pass signals stored as image data in the image memory as different color data and combining the data. The plurality of band-pass signals includes a first band-pass signal having a first frequency range set to include only abrupt transitions in the sample surface and a second band-pass signal having a second frequency range set to include frequencies slightly outside the first frequency range so that abrupt transitions in geometry on the sample surface are represented by a first color in response to the first band-pass signal and areas directly adjacent the abrupt transitions on the sample surface are represented by a second color different from the first color.
    • 扫描探针显微镜,用于在沿Z轴方向移动探头和样本中的至少一个的同时沿XY轴方向扫描样品表面附近的探针,具有多个带通滤波器,用于使 通过从由探针输出的表面几何信号中提取彼此不同的预定频带,来产生多个带通信号。 图像存储器将各个带通信号和相应的位置存储在样本表面上,并且彩色图像输出装置通过将作为图像数据存储的各个带通信号中的每一个作为不同的颜色数据进行处理来输出彩色图像 并组合数据。 多个带通信号包括具有第一频率范围的第一带通信号,其中第一频率范围被设置为仅包括采样表面中的突变,以及具有第二频率范围的第二带通信号,第二频带设置为包括稍微在第一频率之外的频率 范围,使得样品表面上的几何形状的突变过渡由第一颜色响应于第一带通信号表示,并且与样品表面上的突然跃迁直接相邻的区域由不同于第一颜色的第二颜色表示。