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1. 发明申请

US20060180833A1 Semiconductor material having bipolar transistor structure and semiconductor device using same 审中-公开
标题翻译：具有双极晶体管结构的半导体材料和使用其的半导体器件
公开(公告)号：US20060180833A1
公开(公告)日：2006-08-17
申请号：US10539006
申请日：2003-12-16
申请人： Akira Inoue , Masahiko Hata , Yasuyuki Kurita
发明人： Akira Inoue , Masahiko Hata , Yasuyuki Kurita
IPC分类号： H01L31/109
CPC分类号： H01L29/7371 , H01L29/0821
摘要： In an epitaxial substrate (20) comprising a collector layer (22), a base layer (23) and an emitter layer (24) formed on a semi-insulating GaAs substrate (21), a hole barrier layer (22C) is provided in the collector layer (22) to prevent influx of holes from the base layer (23), whereby the flow of collector current is suppressed when the collector current density rises and electron velocity is saturated, suppressing thermal runaway of the collector current without a ballast resistance or the like. Also, thermal runaway of the collector current is suppressed by providing an additional layer (2C) for generating, in the conduction band, an electron barrier by means of electrons accumulated in the collector layer (2) when the collector current density rises.
摘要翻译：在包括集电极层（22），形成在半绝缘GaAs衬底（21）上的基极层（23）和发射极层（24））的外延衬底（20）中，提供了空穴阻挡层（22C）在集电体层（22）中，为了防止从基底层（23）流入空穴，由此当集电极电流密度上升，电子速度饱和时，集电极电流的流动受到抑制，抑制了没有镇流器的集电极电流的热失控电阻等。此外，通过设置用于在集电极电流密度上升时通过积聚在集电极层（2）中的电子在导带中产生电子势垒的附加层（2C）来抑制集电极电流的热失控。

2. 发明授权

US5856320A Cephem compounds, their preparation and their use as antimicrobial agents 失效
标题翻译：头孢烯化合物，它们的制备及其作为抗微生物剂的用途
公开(公告)号：US5856320A
公开(公告)日：1999-01-05
申请号：US732856
申请日：1996-10-15
申请人： Sadao Hayashi , Yasuyuki Kurita
发明人： Sadao Hayashi , Yasuyuki Kurita
IPC分类号： A61K31/545 , A61P31/04 , C07D277/20 , C07D277/40 , C07D501/00 , C07D519/06 , C07D501/56 , A61K31/53
CPC分类号： C07D277/587 , C07D501/00 , Y02P20/55
摘要： Novel cephalosporin derivatives of formula (II): ##STR1## wherein R.sup.2 is hydrogen, methyl, or fluoromethyl; R.sup.3 is hydrogen, methyl or carboxyl; R.sup.4 is hydrogen or methyl; A is methylene or propenylene; Q is nitrogen or CH, and pharmaceutically acceptable salts, solvates, hydrates and esters thereof, a process for their preparation and an antimicrobial composition containing them.
摘要翻译：式（II）的新型头孢菌素衍生物：r氟甲基; R3是氢，甲基或羧基; R4是氢或甲基; A是亚甲基或亚丙烯基; Q是氮或CH，以及其药学上可接受的盐，溶剂合物，水合物和酯，它们的制备方法和含有它们的抗微生物组合物。

3. 发明授权

US5773624A Method for preparing 5-amino-1,2,4-thiadiazol acetic acid derivatives 失效
标题翻译：制备5-氨基-1,2,4-噻二唑乙酸衍生物的方法
公开(公告)号：US5773624A
公开(公告)日：1998-06-30
申请号：US813199
申请日：1997-03-07
申请人： Takashi Inagaki , Yasuyuki Kurita , Akihito Mizutani , Masao Kondo
发明人： Takashi Inagaki , Yasuyuki Kurita , Akihito Mizutani , Masao Kondo
IPC分类号： C07C309/00 , C07C309/73 , C07D285/08
CPC分类号： C07D285/08 , C07C309/00 , C07C309/73
摘要： The invention provides useful intermediates as acylating agents for preparing 7-acylaminocephalosporin compounds which show excellent antimicrobial activities. More particularly, the present invention relates to a process for preparing 5-amino-1,2,4-thiadiazole acetic acid derivatives.
摘要翻译：本发明提供了作为制备显示出优异抗菌活性的7-酰基氨基头孢菌素化合物的酰化剂的有用中间体。更具体地说，本发明涉及一种制备5-氨基-1,2,4-噻二唑乙酸衍生物的方法。

4. 发明授权

US5534508A Cephem compounds and antimicrobial agents 失效
标题翻译：头孢烯化合物和抗微生物剂
公开(公告)号：US5534508A
公开(公告)日：1996-07-09
申请号：US281513
申请日：1994-07-28
申请人： Sadao Hayashi , Eiji Nakanishi , Yasuyuki Kurita , Masahiko Okunishi
发明人： Sadao Hayashi , Eiji Nakanishi , Yasuyuki Kurita , Masahiko Okunishi
IPC分类号： A61K31/545 , A61K31/546 , A61P31/04 , C07D501/00 , C07D501/24 , C07D501/46
CPC分类号： C07D501/00 , Y02P20/55
摘要： Herein disclosed are novel cephem compounds represented by the following general formula (I), and novel antimicrobial, and especially anti-MRSA, agents which contain as an active ingredient at least one of the novel cephem compounds and the physiologically acceptable salts thereof. ##STR1##
摘要翻译：本文公开了由以下通式（I）表示的新型头孢烯化合物，以及含有作为活性成分的至少一种新型头孢烯化合物及其生理学上可接受的盐的新型抗微生物剂，特别是抗MRSA药剂。（一）

5. 发明授权

US07947340B2 Polymeric light emitting substance and polymer light emitting device using the same 有权
标题翻译：聚合物发光物质和使用其的聚合物发光装置
公开(公告)号：US07947340B2
公开(公告)日：2011-05-24
申请号：US10103848
申请日：2002-03-25
申请人： Hideyuki Ikehira , Takahiro Ueoka , Shuji Doi , Yasuyuki Kurita
发明人： Hideyuki Ikehira , Takahiro Ueoka , Shuji Doi , Yasuyuki Kurita
IPC分类号： C09K19/38 , B32B27/00
CPC分类号： H01L51/0039 , C08G61/02 , C08G61/122 , C08G2261/1526 , C08G2261/312 , C08G2261/3422 , C08G2261/5242 , C09K11/06 , C09K2211/1007 , C09K2211/1014 , C09K2211/1029 , C09K2211/1037 , C09K2211/1092 , C09K2211/1408 , C09K2211/1425 , C09K2211/182 , C09K2211/185 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0059 , H01L51/0084 , H01L51/0085 , H01L51/0087 , H01L51/0088 , H01L51/0089 , H01L51/0094 , H01L51/5012 , Y10T428/10 , Y10T428/1352
摘要： A polymeric light emitting substance having a polystyrene reduced number-average molecular weight of from 103 to 108wherein this light emitting substance has in the main chain or side chain a metal complex structure showing light emission from the triplet excited state, and said substance can form a light emitting layer by industrially simple application methods such as a spin coat method, inkjet method, printing method and the like.
摘要翻译：具有聚苯乙烯的聚合物发光物质的数均分子量在103〜108之间，在该发光物质中，主链或侧链具有显示出来自三重态激发态的发光的金属络合物结构，所述物质可形成发光层，通过工业上简单的涂布方法，如旋涂法，喷墨法，印刷法等。

6. 发明申请

US20110108885A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20110108885A1
公开(公告)日：2011-05-12
申请号：US12933356
申请日：2009-03-18
申请人： Hiroyuki Sazawa , Naohiro Nishikawa , Yasuyuki Kurita , Masahiko Hata
发明人： Hiroyuki Sazawa , Naohiro Nishikawa , Yasuyuki Kurita , Masahiko Hata
IPC分类号： H01L29/78 , H01L21/20
CPC分类号： H01L29/7787 , H01L29/1054 , H01L29/2003 , H01L29/42316 , H01L29/66522 , H01L29/78
摘要： The object of the present invention is to increase channel current density while a GaN-based field effect transistor operates in a normally-off mode. Provided is a semiconductor device comprising a group 3-5 compound semiconductor channel layer containing nitrogen, an electron supply layer that supplies electrons to the channel layer, a semiconductor layer that is formed on a side of the electron supply layer opposite the side facing the channel layer and that is an intrinsic or n-type group 3-5 compound semiconductor containing nitrogen, and a control electrode that is formed to contact the semiconductor layer or formed with an intermediate layer interposed between itself and the semiconductor layer.
摘要翻译：本发明的目的是增加沟道电流密度，而GaN系场效应晶体管以常关状态工作。提供了一种半导体器件，其包括含有氮的组3-5化合物半导体沟道层，向沟道层提供电子的电子供给层，形成在电子供给层的与沟道侧相对的一侧上的半导体层并且是含有氮的固有或n型组3-5化合物半导体，以及形成为与半导体层接触或形成有介于其自身与半导体层之间的中间层的控制电极。

7. 发明授权

US06806502B2 3-5 Group compound semiconductor and light emitting device 失效
标题翻译： 3-5组化合物半导体和发光器件
公开(公告)号：US06806502B2
公开(公告)日：2004-10-19
申请号：US09987660
申请日：2001-11-15
申请人： Yasushi Iyechika , Yoshihiko Tsuchida , Yasuyuki Kurita
发明人： Yasushi Iyechika , Yoshihiko Tsuchida , Yasuyuki Kurita
IPC分类号： H01L3112
CPC分类号： H01L33/325 , Y10S438/933 , Y10S438/936
摘要： Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1×1017 cm− or more and 1×1021 cm−3 or less, which can be laminated to control the carrier concentration of an InGaAlN-type mixed crystal in a low range with high reproducibility. Also provided is a 3-5 group compound semiconductor in which the carrier concentration of an InGaAlN-type mixed crystal is controlled in a low range with high reproducibility, and a light emitting device having high light emitting efficiency.
摘要翻译：提供具有1×10 17 cm -3以上且1×10 21 cm -3以下的p型掺杂剂浓度的3-5组化合物半导体，其可以层压以控制载体浓度高的InGaAlN型混合晶体，重现性高。还提供了以高重现性将InGaAlN型混晶体的载流子浓度控制在低范围内的3-5组化合物半导体和具有高发光效率的发光器件。

8. 发明申请

US20110187969A1 POLYMERIC LIGHT EMITTING SUBSTANCE AND POLYMER LIGHT EMITTING DEVICE USING THE SAME 审中-公开
标题翻译：使用聚合物发光物质和聚合物发光装置
公开(公告)号：US20110187969A1
公开(公告)日：2011-08-04
申请号：US13084321
申请日：2011-04-11
申请人： Hideyuki IKEHIRA , Takahiro UEOKA , Shuji DOI , Yasuyuki KURITA
发明人： Hideyuki IKEHIRA , Takahiro UEOKA , Shuji DOI , Yasuyuki KURITA
IPC分类号： G02F1/13357 , C09K11/06 , H01J1/63 , B05D5/06 , B05D3/00 , B32B27/32
CPC分类号： H01L51/0039 , C08G61/02 , C08G61/122 , C08G2261/1526 , C08G2261/312 , C08G2261/3422 , C08G2261/5242 , C09K11/06 , C09K2211/1007 , C09K2211/1014 , C09K2211/1029 , C09K2211/1037 , C09K2211/1092 , C09K2211/1408 , C09K2211/1425 , C09K2211/182 , C09K2211/185 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0059 , H01L51/0084 , H01L51/0085 , H01L51/0087 , H01L51/0088 , H01L51/0089 , H01L51/0094 , H01L51/5012 , Y10T428/10 , Y10T428/1352
摘要： A polymeric light emitting substance having a polystyrene reduced number-average molecular weight of from 103 to 108 wherein this light emitting substance has in the main chain or side chain a metal complex structure showing light emission from the triplet excited state, and the substance can form a light emitting layer by industrially simple application methods such as a spin coat method, inkjet method, printing method and the like.
摘要翻译：聚苯乙烯的数均分子量为103〜108的聚合物发光物质，其特征在于，所述发光物质在所述主链或侧链具有显示来自所述三重激发态的发光的金属络合物结构，所述物质可以形成通过工业上简单的涂布方法如旋涂法，喷墨法，印刷法等形成发光层。

9. 发明授权

US5705650A Process for preparing 1,2,4-thiadiazole derivatives 失效
标题翻译：制备1,2,4-噻二唑衍生物的方法
公开(公告)号：US5705650A
公开(公告)日：1998-01-06
申请号：US657170
申请日：1996-06-03
申请人： Kuniaki Tatsuta , Yasuyuki Kurita , Takashi Inagaki , Ryonosuke Yoshida
发明人： Kuniaki Tatsuta , Yasuyuki Kurita , Takashi Inagaki , Ryonosuke Yoshida
IPC分类号： C07D261/14 , C07D285/08
CPC分类号： C07D285/08 , C07D261/14
摘要： An improved process for the production of 5-amino-1,2,4-thiadiazol-3-yl-(2-(lower)-alkoxyimino)acetic acids starting from 5-substituted- or unsubstituted-3-aminoisoxazole compounds is disclosed herein. The title compounds are useful as acylating agents for the production of 7-acylaminocephalosporins.
摘要翻译：本文公开了从5-取代或未取代的3-氨基异恶唑化合物开始制备5-氨基-1,2,4-噻二唑-3-基 - （2-（低级） - 烷氧基亚氨基）乙酸的改进方法。标题化合物可用作产生7-酰基氨基头孢菌素的酰化剂。

10. 发明申请

US20100200894A1 HETERO JUNCTION BIPOLAR TRANSISTOR 审中-公开
标题翻译：异质结双极晶体管
公开(公告)号：US20100200894A1
公开(公告)日：2010-08-12
申请号：US12670215
申请日：2008-07-10
申请人： Yasuyuki Kurita , Noboru Fukuhara
发明人： Yasuyuki Kurita , Noboru Fukuhara
IPC分类号： H01L29/73
CPC分类号： H01L29/737 , H01L29/0817 , H01L29/201 , H01L29/205 , H01L29/7304 , H01L29/7371
摘要： An energy level Ec in a vicinity of an interface between a graded layer 1G a ballast resistor 1R is smoothly continuous. This is because an n-type impurity concentration CION in the vicinity of the interface is increased and thus an ionized donor (having a positive charge) exists in the vicinity of the interface. That is, the donor ion cancels out a spike-like potential barrier φBARRIER protruding in the negative direction of the potential in the vicinity of this interface. Accordingly, the resistance value of an HBT at room temperature decreases and the high frequency characteristics are improved.
摘要翻译：梯级层1G之间的界面附近的镇流电阻Ec平稳地连续。这是因为界面附近的n型杂质浓度CION增加，因此在界面附近存在电离供体（具有正电荷）。也就是说，供体离子抵消在该界面附近的电势的负方向上突出的尖状势垒和障碍物。因此，HBT在室温下的电阻值降低，高频特性提高。

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