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41. 发明授权

US08426835B2 Charged particle radiation device 有权
标题翻译：带电粒子辐射装置
公开(公告)号：US08426835B2
公开(公告)日：2013-04-23
申请号：US13376473
申请日：2010-06-15
申请人： Keigo Kasuya , Takashi Ohshima , Souichi Katagiri , Masashi Kimura
发明人： Keigo Kasuya , Takashi Ohshima , Souichi Katagiri , Masashi Kimura
IPC分类号： G21K5/08
CPC分类号： H01J37/065 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3174 , H01J2237/0206 , H01J2237/0213 , H01J2237/022 , H01J2237/06316 , H01J2237/06325 , H01J2237/06375 , H01J2237/2482
摘要： An electron gun that serves to reduce the quantity of electron stimulated desorption and accomplishes vacuum evacuation efficiently with a sufficient degree of vacuum. An electron source 1 and an extraction electrode 6 are provided for emitting an electron beam 7 from the electron source 1. A first vacuum chamber 16 containing the electron source 1 is connected to a second vacuum chamber 9 via an aperture 8 provided in the extraction electrode 6. Each vacuum chamber is differentially evacuated with an independent vacuum evacuation means, and the generation of electron stimulated desorption gas 11 is reduced by securing a wide route of vacuum evacuation around the electron source 1 and intercepting the procession of back scattered electrons 12 emitted from the area with the electron beam 7 on the extraction electrode 6 by using a shielding electrode 22 given a prescribed potential.
摘要翻译：一种电子枪，其用于减少电子刺激的解吸量，并以足够的真空度有效地实现真空排气。提供电子源1和提取电极6，用于从电子源1发射电子束7.包含电子源1的第一真空室16通过设置在引出电极中的孔8连接到第二真空室9 每个真空室用独立的真空排气装置进行差异抽真空，并且通过确保在电子源1周围的宽的真空排气路径并且截断从后面散射的电子12的排出而减少电子刺激的解吸气体11的产生通过使用给定电位的屏蔽电极22，在引出电极6上具有电子束7的区域。

42. 发明申请

US20120313358A1 AIRBAG 有权
标题翻译：安全气囊
公开(公告)号：US20120313358A1
公开(公告)日：2012-12-13
申请号：US13579803
申请日：2011-02-02
申请人： Masakazu Okamoto , Akifumi Hanawa , Takashi Ohshima
发明人： Masakazu Okamoto , Akifumi Hanawa , Takashi Ohshima
IPC分类号： B60R21/26
CPC分类号： B60R21/2171 , B60R21/206 , B60R21/2346 , B60R21/237
摘要： An airbag having a cushion part defining an insertion hole that is positioned between first and second sewing lines provided to a base fabric and that is provided for the insertion of the inflator from an outside to an inside. A diffuser positioned within the cushion part and in which the inflator is inserted from the insertion hole. The diffuser has a tubular portion with a portion formed by folding layers of fabrics and being sewn to the base fabric along the first sewing line. The diffuser fabric of the tubular portion on a side adjacent to the base fabric being additionally sewn to the base fabric along a second sewing line. The diffuser includes a guide member 1 that extends and covers the insertion hole with a surface that continues from an inner surface of the diffuser. The guide member being sewn to the base fabric along the first sewing line.
摘要翻译：一种安全气囊，其具有限定插入孔的缓冲部件，所述插入孔位于设置在基布上的第一和第二缝合线之间，并且设置成用于将充气器从外部插入到内部。位于缓冲部分内的扩散器，其中充气机从插入孔插入其中。扩散器具有管状部分，其部分通过折叠织物层而形成，并且沿着第一缝合线缝合到基底织物。在与基底织物相邻的一侧的管状部分的扩散织物，沿第二缝合线另外缝合到基底织物上。扩散器包括引导构件1，该引导构件1从扩散器的内表面延伸并覆盖插入孔。引导构件沿着第一缝合线缝合到基底织物上。

43. 发明授权

US08115184B2 Gas field ion source, charged particle microscope, and apparatus 有权
标题翻译：气体离子源，带电粒子显微镜和装置
公开(公告)号：US08115184B2
公开(公告)日：2012-02-14
申请号：US12318583
申请日：2008-12-31
申请人： Hiroyasu Shichi , Shinichi Matsubara , Takashi Ohshima , Satoshi Tomimatsu , Tomihiro Hashizume , Tohru Ishitani
发明人： Hiroyasu Shichi , Shinichi Matsubara , Takashi Ohshima , Satoshi Tomimatsu , Tomihiro Hashizume , Tohru Ishitani
IPC分类号： H01J49/00
CPC分类号： H01J27/26 , H01J37/08 , H01J2237/0805 , H01J2237/0807 , H01J2237/182
摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.
摘要翻译：一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。气体离子源具有改变真空气体分子离子化室中的电导的机理。也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对较小的电导率相对较低的温度和相对高的温度下的相对较大的电导率。

44. 发明申请

US20110089336A1 CHARGED PARTICLE BEAM APPARATUS, AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：充电颗粒光束装置及其控制方法
公开(公告)号：US20110089336A1
公开(公告)日：2011-04-21
申请号：US12999075
申请日：2009-06-10
申请人： Keigo Kasuya , Takashi Ohshima , Souichi Katagiri , Shigeru Kokubo , Hideo Todokoro
发明人： Keigo Kasuya , Takashi Ohshima , Souichi Katagiri , Shigeru Kokubo , Hideo Todokoro
IPC分类号： H01J27/26 , H01J27/00
CPC分类号： H01J1/304 , H01J37/073 , H01J37/265 , H01J2237/022 , H01J2237/06325 , H01J2237/0653 , H01J2237/0656
摘要： Provided is a charged particle beam apparatus, which can emit a stable electron beam, having high brightness and a narrow energy width. The charged particle beam apparatus comprises a field emission electron source, electrodes for applying an electric field to the field emission electron source, and a vaccume exhaust unit for keeping the pressure around the field emission electron source at 1 10−8 Pa or less. The apparatus is so constituted as to use such one of the electron beams emitted as has an electron-beam-center radiation angle of 1 10−2 str or less, and to use the electric current thereof, the second order differentiation of which is negative or zero with respect to the time, and which reduces at a rate of 10% or less per hour. The charged particle beam apparatus further comprises a heating unit for the field emission electron source, and a detection unit for the electric current of the electron beam. The field emission electron source is repeatedly heated to keep the electric current of the electron beam to be emitted, at a predetermined value or higher.
摘要翻译：提供一种带电粒子束装置，其能够发射具有高亮度和窄能量宽度的稳定电子束。带电粒子束装置包括场致发射电子源，用于向场致发射电子源施加电场的电极和用于将场致发射电子源周围的压力保持在10×10 8 Pa以下的疫苗排气单元。该装置构成为使用发射的电子束中心辐射角为1×10 -2 str以下的电子束，并使用其电流，其二阶微分为负或相对于时间为零，并以每小时10％或更少的速率减少。带电粒子束装置还包括用于场发射电子源的加热单元和用于电子束电流的检测单元。重复加热场致发射电子源以使电子束的电流保持在规定值以上。

45. 发明授权

US5811819A Electron beam source and its manufacturing method and electron beam source apparatus and electron beam apparatus using the same 失效
标题翻译：电子束源及其制造方法和电子束源装置及使用其的电子束装置
公开(公告)号：US5811819A
公开(公告)日：1998-09-22
申请号：US568865
申请日：1995-12-05
申请人： Takashi Ohshima , Hiroyuki Shinada , Katsuhiro Kuroda
发明人： Takashi Ohshima , Hiroyuki Shinada , Katsuhiro Kuroda
IPC分类号： H01J1/304 , H01J1/308 , H01J9/02 , H01J37/073 , H01J37/06
CPC分类号： H01J9/025 , H01J1/3042 , H01J1/308 , H01J37/073 , H01J2201/30426
摘要： An electron beam source is provided with an electron forming means such as a doped layer of Si for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided. An electron beam source apparatus and electron beam apparatus incorporating the electron beam source as defined above are also disclosed.
摘要翻译：电子束源设置有诸如Si的掺杂层的电子形成装置，用于在抑制从价带发射电子的同时在针状结构的尖端的表面附近形成导带电子。针状结构的尖端的表面由单晶半导体或绝缘体形成。优选地，在针状结构的表面上形成表面钝化层和/或高掺杂层。此外，也可以提供用于激发在价带中的电子的装置。还公开了包含如上所述的电子束源的电子束源装置和电子束装置。

46. 发明授权

US5241197A Transistor provided with strained germanium layer 失效
标题翻译：晶体管配有应变锗层
公开(公告)号：US5241197A
公开(公告)日：1993-08-31
申请号：US759772
申请日：1991-09-13
申请人： Eiichi Murakami , Kiyokazu Nakagawa , Takashi Ohshima , Hiroyuki Eto , Masanobu Miyao
发明人： Eiichi Murakami , Kiyokazu Nakagawa , Takashi Ohshima , Hiroyuki Eto , Masanobu Miyao
IPC分类号： H01L27/085 , H01L29/165 , H01L29/737 , H01L29/778 , H01L29/80
CPC分类号： H01L29/7378 , H01L27/085 , H01L29/165 , H01L29/7373 , H01L29/7782 , H01L29/802
摘要： A transistor having a high carrier mobility and suited for a high-speed operation can be formed by utilizing a fact that the carrier mobility in a strained germanium layer is large. A strain control layer is provided beneath the germanium layer to impose a compressive strain on the germanium layer, and the composition of the strain control layer in a predetermined range is used to generate the compressive strain surely.
摘要翻译：可以通过利用应变锗层中的载流子迁移率大的事实来形成具有高载流子迁移率且适于高速操作的晶体管。在锗层下方设置应变控制层，以在锗层上施加压缩应变，并且使用预定范围内的应变控制层的组成以确定地产生压缩应变。

47. 发明授权

US4621419A Automatic IC mounting process and apparatus for performing the process 失效
标题翻译：自动IC安装过程和执行该过程的设备
公开(公告)号：US4621419A
公开(公告)日：1986-11-11
申请号：US687283
申请日：1984-12-28
申请人： Toshikatsu Hino , Fumio Arase , Takashi Ohshima
发明人： Toshikatsu Hino , Fumio Arase , Takashi Ohshima
IPC分类号： B23P21/00 , H05K13/00 , H05K13/04 , H05K13/08 , H05K3/30 , B23P23/00
CPC分类号： H05K13/0404 , H05K13/08 , Y10T29/5137 , Y10T29/53183
摘要： An automatic IC mounting process for mounting a plurality of ICs on an upper surface of a printed circuit board in accordance with a predetermined sequence program. Each of the ICs has a plurality of leads, each of which is to be inserted into a predetermined corresponding through-hole of the printed circuit board. The process includes: (i) a step for inserting the leads of an IC into the through-holes of the printed circuit board; (ii) a step for detecting whether or not each lead of the IC is correctly inserted into the corresponding through-hole after every step (i); (iii) a step for removing a misinserted IC having a misinserted lead from the printed circuit board and discarding the misinserted IC into a predetermined reject place immediately after a misinsertion is detected in the step (ii); (iv) a step for memorizing the information for identifying the misinserted IC; (v) a step for mounting a predetermined number of subsequent ICs on the printed circuit board in accordance with the predetermined sequence program, leaving the position of the misinserted IC unmounted; (vi) a step for searching for whether or not the information was memorized in the step (iv); and, (vii) a step for preparing a new IC identified by that information and remounting it on the printed circuit board at the position of the misinserted IC.
摘要翻译：一种用于根据预定顺序程序将多个IC安装在印刷电路板的上表面上的自动IC安装过程。每个IC具有多个引线，每个引线被插入到印刷电路板的预定对应的通孔中。该方法包括：（i）将IC的引线插入印刷电路板的通孔中的步骤; （ii）在每个步骤（i）之后检测IC的每个引线是否被正确地插入到相应的通孔中的步骤; （iii）在步骤（ii）中检测到错误插入之后，立即将从印刷电路板移除具有错误插入的引线的错误插入的IC并将错误插入的IC丢弃到预定的拒绝位置的步骤; （iv）记录识别错误插入的IC的信息的步骤; （v）根据预定的顺序程序将预定数量的后续IC安装在印刷电路板上的步骤，使错误插入的IC的位置不被安装; （vi）在步骤（iv）中搜索该信息是否被记住的步骤; 和（vii）准备由该信息确定的新的IC并将其重新安装在印刷电路板上的错误插入IC位置的步骤。

48. 发明授权

US08714585B2 Knee airbag 有权
标题翻译：膝盖安全气囊
公开(公告)号：US08714585B2
公开(公告)日：2014-05-06
申请号：US13579792
申请日：2011-02-02
申请人： Masakazu Okamoto , Akifumi Hanawa , Takashi Ohshima
发明人： Masakazu Okamoto , Akifumi Hanawa , Takashi Ohshima
IPC分类号： B60R21/231
CPC分类号： B60R21/2171 , B60R21/2346 , B60R21/237 , B60R2021/23169
摘要： An airbag in which no choking occurs and which can be rapidly deployed. A cushion section of the airbag internally accommodates a cylinder-type inflator that includes an insertion hole for inserting the inflator from an outside to an inside, and a diffuser into which the inflator is inserted, and a diffuser having a tubular portion obtained by folding back a section of cloth to form symmetrical portions with an upper base formed by the folded back part and a lower base formed by adjacent ends of the symmetrical portions. The cushion section is folded back at both lateral sides of the along first folding lines that are substantially orthogonal to a longitudinal direction of the diffuser.
摘要翻译：安全气囊，其中不发生窒息并且可以快速部署。气囊的缓冲部内部容纳有气缸式充气机，其包括用于将充气器从外部插入到内部的插入孔和充气器插入到其中的扩散器，以及具有通过折回获得的管状部分的扩散器形成对称部分的布的一部分与由折叠部分形成的上基部和由对称部分的相邻端形成的下基部。缓冲部分沿着与扩散器的纵向方向基本正交的第一折叠线的两侧的侧面折回。

49. 发明授权

US08530865B2 Gas field ion source, charged particle microscope, and apparatus 有权
公开(公告)号：US08530865B2
公开(公告)日：2013-09-10
申请号：US13355104
申请日：2012-01-20
申请人： Hiroyasu Shichi , Shinichi Matsubara , Takashi Ohshima , Satoshi Tomimatsu , Tomihiro Hashizume , Tohru Ishitani
发明人： Hiroyasu Shichi , Shinichi Matsubara , Takashi Ohshima , Satoshi Tomimatsu , Tomihiro Hashizume , Tohru Ishitani
IPC分类号： H01J49/26 , H01J49/00 , H01J37/08
CPC分类号： H01J27/26 , H01J37/08 , H01J2237/0805 , H01J2237/0807 , H01J2237/182
摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

50. 发明授权

US08450699B2 Electron beam device and electron beam application device using the same 有权
标题翻译：电子束装置和使用其的电子束施加装置
公开(公告)号：US08450699B2
公开(公告)日：2013-05-28
申请号：US13133947
申请日：2009-12-04
申请人： Takashi Ohshima , Satoshi Tomimatsu
发明人： Takashi Ohshima , Satoshi Tomimatsu
IPC分类号： G21K7/00 , B01J19/08 , H01J9/04
CPC分类号： H01J37/28 , H01J37/065 , H01J37/075 , H01J37/256 , H01J2237/06316
摘要： To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 μm and less than 1 μm, and the cone angle α of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.
摘要翻译：为了获得能够在低加速电压下提供高分辨率并允许高速元素分布测量的SEM，包括Zr-O作为扩散源的SE电子源被成形为使得尖端的曲率半径r大于 0.5μm以上且小于1μm，并且尖端附近尖端的距离尖端3r至8r的部分的锥形角α大于5°且小于（8 / r） °。另一个SE电子源使用Ba-O，并且包括由烧结金属和含有氧化钡的钡扩散源组成的钡扩散供给装置。

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