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41. 发明授权

US08450196B2 Production of an integrated circuit including electrical contact on SiC 有权
标题翻译：生产包括SiC上电接触的集成电路
公开(公告)号：US08450196B2
公开(公告)日：2013-05-28
申请号：US11924093
申请日：2007-10-25
申请人： Roland Rupp , Thomas Gutt , Michael Treu
发明人： Roland Rupp , Thomas Gutt , Michael Treu
IPC分类号： H01L21/28
CPC分类号： H01L21/0495 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/0485 , H01L21/268 , H01L21/2683 , H01L29/1608 , H01L29/417 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/66143 , H01L29/872
摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.
摘要翻译：公开了一种包括SiC上电接触的集成电路的生产。一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

42. 发明授权

US08187632B2 Sustained-release preparations of quinolone antibiotics 有权
标题翻译：喹诺酮类抗生素缓释制剂
公开(公告)号：US08187632B2
公开(公告)日：2012-05-29
申请号：US11762831
申请日：2007-06-14
申请人： Venkata-Rangarao Kanikanti , Roland Rupp , Wolfgang Weber , Peter Deuringer , Jan-Olav Henck , Heino Stab , Takaaki Nishioka , Yoshifumi Katakawa , Chika Taniguchi , Hitoshi Ichihashi
发明人： Venkata-Rangarao Kanikanti , Roland Rupp , Wolfgang Weber , Peter Deuringer , Jan-Olav Henck , Heino Stab , Takaaki Nishioka , Yoshifumi Katakawa , Chika Taniguchi , Hitoshi Ichihashi
IPC分类号： A61K9/22 , A61K9/20 , A61K9/24 , A61K9/14 , A61K31/497 , A61K31/47
CPC分类号： A61K31/496 , A61K9/2027 , A61K9/2054 , A61K9/209 , A61K31/47 , A61K31/495 , C07D401/04 , Y10S514/96 , Y10S514/964 , A61K2300/00
摘要： The present invention relates to an orally administrable preparation comprising a quinolone antibiotic which releases the active compound with a delay.
摘要翻译：本发明涉及可延缓释放活性化合物的喹诺酮抗生素的可口服制剂。

43. 发明申请

US20120034274A1 PHARMACEUTICAL COMPOSITION COMPRISING ONE OR MORE FUMARIC ACID ESTERS 审中-公开
标题翻译：包含一种或更多种富马酸的药物组合物
公开(公告)号：US20120034274A1
公开(公告)日：2012-02-09
申请号：US13143465
申请日：2010-01-08
申请人： Henrik Nilsson , Roland Rupp
发明人： Henrik Nilsson , Roland Rupp
IPC分类号： A61K31/225 , A61K9/00 , A61P17/06 , A61P1/00 , A61P25/00 , A61P3/10 , A61P1/16 , A61P29/00 , A61P27/02 , C07C69/60 , A61P19/02
CPC分类号： A61K31/223 , A61K9/2846 , A61K9/2866 , A61K31/215 , A61K31/225
摘要： A pharmaceutical controlled release composition comprising one or more fumaric acid esters.
摘要翻译：包含一种或多种富马酸酯的药物控释组合物。

44. 发明授权

US08102012B2 Transistor component having a shielding structure 有权
标题翻译：具有屏蔽结构的晶体管组件
公开(公告)号：US08102012B2
公开(公告)日：2012-01-24
申请号：US12426008
申请日：2009-04-17
申请人： Dethard Peters , Peter Friedrichs , Rudolf Elpelt , Larissa Wehrhahn-Kilian , Michael Treu , Roland Rupp
发明人： Dethard Peters , Peter Friedrichs , Rudolf Elpelt , Larissa Wehrhahn-Kilian , Michael Treu , Roland Rupp
IPC分类号： H01L27/088
CPC分类号： H01L29/8083 , H01L29/0657 , H01L29/1066 , H01L29/8122
摘要： A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.
摘要翻译：具有屏蔽结构的晶体管组件。一个实施例提供了源极端子，漏极端子和控制端子。第一导电类型的源极区域连接到源极端子。第一导电类型的漏极区域连接到漏极端子。漂移区设置在源区和排水区之间。提供了结点控制结构，用于控制在漏区和源区之间的漂移区中的接合区，至少包括一个控制区。屏蔽结构布置在结点控制结构和漏区之间的漂移区中，并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。屏蔽区域与屏蔽电位端子相连。所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

45. 发明授权

US07763506B2 Method for making an integrated circuit including vertical junction field effect transistors 有权
标题翻译：制造包括垂直结型场效应晶体管的集成电路的方法
公开(公告)号：US07763506B2
公开(公告)日：2010-07-27
申请号：US11852853
申请日：2007-09-10
申请人： Michael Treu , Roland Rupp , Heinz Mitlehner , Rudolf Elpelt , Peter Friedrichs , Larissa Wehrhahn-Kilian
发明人： Michael Treu , Roland Rupp , Heinz Mitlehner , Rudolf Elpelt , Peter Friedrichs , Larissa Wehrhahn-Kilian
IPC分类号： H01L21/337
CPC分类号： H01L29/8083 , H01L29/0692 , H01L29/1066 , H01L29/1608 , H01L29/41766 , H01L29/6606 , H01L29/66909
摘要： A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.
摘要翻译：公开了一种制造包括垂直结型场效应晶体管的集成电路的方法。一个实施例使用容错或对准容限的制造工艺创建垂直结型场效应晶体管。即使在连续的半导体处理步骤中发生未对准，器件性能也不会受到损害。

46. 发明授权

US07459365B2 Method for fabricating a semiconductor component 有权
标题翻译：半导体部件的制造方法
公开(公告)号：US07459365B2
公开(公告)日：2008-12-02
申请号：US11540922
申请日：2006-09-29
申请人： Michael Rüb , Herbert Schäfer , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier , Roland Rupp , Manfred Pippan , Hans Weber , Frank Pfirsch , Franz Hirler , Hans-Joachim Schulze
发明人： Michael Rüb , Herbert Schäfer , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier , Roland Rupp , Manfred Pippan , Hans Weber , Frank Pfirsch , Franz Hirler , Hans-Joachim Schulze
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/76224 , H01L29/0653 , H01L29/165 , H01L29/66734 , H01L29/7804 , H01L29/7849
摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.
摘要翻译：公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷的半导体材料，并且牺牲层被电介质代替。

47. 发明申请

US20080258183A1 Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching 有权
标题翻译：通过局部加热一个或多个金属化层并通过选择性蚀刻来制造器件的方法
公开(公告)号：US20080258183A1
公开(公告)日：2008-10-23
申请号：US11789045
申请日：2007-04-23
申请人： Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
发明人： Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
IPC分类号： H01L29/80 , H01L27/095
CPC分类号： H01L29/47 , H01L21/0485 , H01L21/0495 , H01L21/268 , H01L21/32134 , H01L23/528 , H01L29/1608 , H01L29/417 , H01L29/41725 , H01L29/42316 , H01L29/6606 , H01L29/66068 , H01L29/66901 , H01L29/66909 , H01L29/808 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.
摘要翻译：一种制造器件的方法包括将一个或多个金属化层沉积到衬底上，局部加热所述一个或多个金属化层的区域以获得衬底/金属化层化合物或金属化层化合物，所述化合物包括蚀刻 - 选择性不同于区域外的一个或多个金属化层的蚀刻介质的选择性，以及根据该区域或区域外的蚀刻选择性，去除该区域或区域外的一个或多个金属化层，通过用蚀刻介质蚀刻以形成该器件。

48. 发明申请

US20070091518A1 Safety switch for a safety circuit 有权
标题翻译：安全开关用于安全电路
公开(公告)号：US20070091518A1
公开(公告)日：2007-04-26
申请号：US11581039
申请日：2006-10-13
申请人： Juergen Pullmann , Roland Rupp
发明人： Juergen Pullmann , Roland Rupp
IPC分类号： H02H7/08
CPC分类号： H01H47/002 , H01H47/004 , H03K17/965
摘要： A safety switch for safety circuit arrangement has a control part for processing an input signal and at least one switching element with at least one active and one inactive switching state. The control part controls the switching element in order to generate an output signal dependent on the input signal at an output. In addition, the safety switch has a diagnostic function for identifying a functional fault. The control part is configured to transfer the switching element into the inactive state when a functional fault is identified. According to one aspect of the invention, the control part is also configured to generate a data message at the output, which data message is dependent on the functional fault.
摘要翻译：用于安全电路装置的安全开关具有用于处理输入信号的控制部分和具有至少一个有效和无效切换状态的至少一个开关元件。控制部分控制开关元件，以便根据输出端的输入信号产生输出信号。另外，安全开关具有识别功能故障的诊断功能。控制部分被配置为当识别功能故障时将开关元件传送到非活动状态。根据本发明的一个方面，控制部分还被配置为在输出端生成数据消息，该数据消息取决于功能故障。

49. 发明授权

US06905916B2 Method for processing a surface of an SiC semiconductor layer and Schottky contact 有权
标题翻译：用于处理SiC半导体层的表面和肖特基接触的方法
公开(公告)号：US06905916B2
公开(公告)日：2005-06-14
申请号：US10146585
申请日：2002-05-15
申请人： Wolfgang Bartsch , Michael Treu , Roland Rupp
发明人： Wolfgang Bartsch , Michael Treu , Roland Rupp
IPC分类号： H01L29/872 , H01L21/04 , H01L21/20 , H01L21/3065 , H01L29/47 , H01L29/74
CPC分类号： H01L21/0495 , H01L21/048 , H01L21/0485
摘要： A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.
摘要翻译：一种用于处理通过外延生产的SiC半导体主体上的表面的方法。根据该方法，通过蚀刻去除在外延的最后相中沉积的部分上覆层，然后进行湿化学处理以除去表面上的薄的天然氧化物。或者，也可以在去除处理之后立即将表面构造为肖特基接触和/或欧姆接触的金属层施加于表面。

50. 发明授权

US6153012A Device for treating a substrate 失效
标题翻译：用于处理基材的装置
公开(公告)号：US6153012A
公开(公告)日：2000-11-28
申请号：US868769
申请日：1997-06-04
申请人： Roland Rupp , Johannes Voelkl
发明人： Roland Rupp , Johannes Voelkl
IPC分类号： C23C16/44 , C23C16/458 , C23C16/46 , C30B25/10 , C30B25/12 , C30B29/36 , C30B29/38 , H01L21/205 , C23C16/00
CPC分类号： C23C16/4584 , C23C16/46 , C30B25/10 , C30B25/12
摘要： A device for treating at least one substrate comprises a susceptor that is thermally coupled to the substrate and an induction-heating device for heating the susceptor. The induction-heating device and the susceptor are so disposed with respect to one another that an electromagnetic force acting on the susceptor is directed parallel to the force of gravity. As a result, a mechanically and thermally stable structure is assured.
摘要翻译：用于处理至少一个基板的装置包括热耦合到基板的基座和用于加热基座的感应加热装置。感应加热装置和基座相对于彼此设置成使作用在基座上的电磁力平行于重力指向。结果，确保了机械和热稳定的结构。

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