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1. 发明授权

US08475326B2 Outer plate carrier 有权
标题翻译：外板载体
公开(公告)号：US08475326B2
公开(公告)日：2013-07-02
申请号：US13523400
申请日：2012-06-14
申请人： Oliver Noehl , Michael Schlosser , Thomas Gutt , Frank Feurer
发明人： Oliver Noehl , Michael Schlosser , Thomas Gutt , Frank Feurer
IPC分类号： F16H57/08
CPC分类号： F16D13/683
摘要： An outer plate carrier, including a cup-shaped embodied carrier plate (110) comprising a cylinder-shell shaped cylindrical section (130) and a circular-disk shaped bottom section (120). The bottom section (120) of the carrier plate (110) carries a cup-shaped hub section (140), arranged centrally. The cup-shaped hub section includes a cylindrical-shell shaped hub jacket (160) and a circular-disk shaped hub bottom (150). The hub bottom (150) has a smaller diameter than the bottom section (120) of the carrier plate (110). The hub bottom (150) is continuous and embodied in one piece with the carrier plate (110).
摘要翻译：一个外板载体，包括一个包括一个圆柱形壳形圆柱形部分（130）和一个圆盘形底部部分（120）的杯形实施的承载板（110）。承载板（110）的底部（120）承载中心布置的杯状毂部（140）。杯形轮毂部分包括圆柱形壳形轮毂护套（160）和圆盘形轮毂底部（150）。毂底部（150）的直径小于承载板（110）的底部部分（120）。轮毂底部（150）是连续的，并与承载板（110）一体成型。

2. 发明授权

US08011319B2 Method for oxidizing a layer, and associated holding devices for a substrate 有权
标题翻译：用于氧化层的方法以及用于衬底的相关保持装置
公开(公告)号：US08011319B2
公开(公告)日：2011-09-06
申请号：US12573394
申请日：2009-10-05
申请人： Hin-Yiu Chung , Thomas Gutt
发明人： Hin-Yiu Chung , Thomas Gutt
IPC分类号： B05C11/00
CPC分类号： H01L21/3247 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/31666 , H01L21/3228 , H01L21/67115 , H01L21/68735 , H01S5/18311 , Y10S438/94
摘要： A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.
摘要翻译：提出了一种保持装置，其中在单衬底工艺中处理待氧化的层。处理期间的处理温度直接记录在基板或基板的保持装置上。该方法包括将在衬层的边缘区域中被覆盖的未被覆盖的层的衬底引入到加热装置中，将氧化气体传递到衬底上，将衬底加热到处理温度，该过程温度在通过保持基板的保持装置的温度进行处理，并且在处理期间将基板温度控制到期望的温度或温度曲线。

3. 发明申请

US20080099769A1 PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC 有权
标题翻译：在SiC上生产包括电接触的集成电路
公开(公告)号：US20080099769A1
公开(公告)日：2008-05-01
申请号：US11924093
申请日：2007-10-25
申请人： Roland Rupp , Thomas Gutt , Michael Treu
发明人： Roland Rupp , Thomas Gutt , Michael Treu
IPC分类号： H01L29/24 , H01L21/04
CPC分类号： H01L21/0495 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/0485 , H01L21/268 , H01L21/2683 , H01L29/1608 , H01L29/417 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/66143 , H01L29/872
摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.
摘要翻译：公开了一种包括SiC上电接触的集成电路的生产。一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

4. 发明授权

US09209281B2 Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching 有权
标题翻译：通过局部加热一个或多个金属化层并通过选择性蚀刻来制造器件的方法
公开(公告)号：US09209281B2
公开(公告)日：2015-12-08
申请号：US11789045
申请日：2007-04-23
申请人： Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
发明人： Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
IPC分类号： H01L29/66 , H01L21/04 , H01L21/3213 , H01L21/268 , H01L29/16
CPC分类号： H01L29/47 , H01L21/0485 , H01L21/0495 , H01L21/268 , H01L21/32134 , H01L23/528 , H01L29/1608 , H01L29/417 , H01L29/41725 , H01L29/42316 , H01L29/6606 , H01L29/66068 , H01L29/66901 , H01L29/66909 , H01L29/808 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.
摘要翻译：一种制造器件的方法包括将一个或多个金属化层沉积到衬底上，局部加热所述一个或多个金属化层的区域以获得衬底/金属化层化合物或金属化层化合物，所述化合物包含蚀刻 - 选择性不同于区域外的一个或多个金属化层的蚀刻介质的选择性，以及根据该区域或区域外的蚀刻选择性，去除该区域或区域外的一个或多个金属化层，通过用蚀刻介质蚀刻以形成该器件。

5. 发明授权

US07842590B2 Method for manufacturing a semiconductor substrate including laser annealing 有权
标题翻译：包括激光退火的半导体衬底的制造方法
公开(公告)号：US07842590B2
公开(公告)日：2010-11-30
申请号：US12110740
申请日：2008-04-28
申请人： Thomas Gutt , Frank Umbach , Hans Peter Felsl , Manfred Pfaffenlehner , Franz-Josef Niedernostheide , Holger Schulze
发明人： Thomas Gutt , Frank Umbach , Hans Peter Felsl , Manfred Pfaffenlehner , Franz-Josef Niedernostheide , Holger Schulze
IPC分类号： H01L21/425
CPC分类号： H01L29/7395 , H01L21/26513 , H01L21/268 , H01L29/0611 , H01L29/0615 , H01L29/08 , H01L29/66083 , H01L29/861
摘要： A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.
摘要翻译：一种通过激光退火制造半导体器件的方法。一个实施例提供了具有第一表面和第二表面的半导体衬底。第二表面布置成与第一表面相对。第一掺杂剂在第二表面被引入半导体衬底中，使得其半导体衬底中的峰值掺杂浓度位于相对于第二表面的第一深度。第二掺杂剂在第二表面被引入到半导体表面中，使得其半导体衬底中的峰值掺杂浓度相对于第二表面位于第二深度，其中第一深度大于第二深度。至少通过将至少一个激光束脉冲引导到第二表面上来进行至少第一激光退火，以至少在第二表面上以部分熔化半导体衬底。

6. 发明申请

US20070111527A1 Method For Producing And Cleaning Surface-Mountable Bases With External Contacts 有权
标题翻译：用于生产和清洁带有外部触点的表面安装座的方法
公开(公告)号：US20070111527A1
公开(公告)日：2007-05-17
申请号：US11552754
申请日：2006-10-25
申请人： Thomas Gutt , Sokratis Sgouridis
发明人： Thomas Gutt , Sokratis Sgouridis
IPC分类号： H01L21/302
CPC分类号： H01L24/11 , H01L24/81 , H01L2224/1147 , H01L2224/13099 , H01L2224/81009 , H01L2224/81011 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01016 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/19042
摘要： In a method for producing bases with external contacts for surface mounting on circuit mounts, bases with external contacts are electrodeposited on semiconductor wafers or semiconductor chips. Subsequently, electrodeposited bases with external contacts are heat treated on the semiconductor wafers or the semiconductor chips at temperatures below the melting temperature of the deposited contact base material. Thereafter, a so-called RTP process is carried out in the form of a high-temperature interval in which the melting temperature is reached. Subsequently, the surfaces of the bases with external contacts are wet etched, the overall method being terminated by a cooling and drying operation. The bases with external contacts thus produced can be reliably surface mounted on circuit mounts.
摘要翻译：在用于制造具有用于表面安装在电路安装件上的外部触头的基座的方法中，具有外部触点的基底电沉积在半导体晶片或半导体芯片上。随后，在低于沉积的接触母材的熔融温度的温度下，在半导体晶片或半导体芯片上对具有外部触点的电沉积基底进行热处理。此后，以达到熔融温度的高温区间的形式进行所谓的RTP工艺。随后，将具有外部触头的底座的表面湿式蚀刻，整个方法通过冷却和干燥操作终止。具有如此制造的外部触点的基座可以可靠地表面安装在电路安装件上。

7. 发明授权

US08541892B2 Bonding connection between a bonding wire and a power semiconductor chip 有权
标题翻译：接合线与功率半导体芯片之间的接合连接
公开(公告)号：US08541892B2
公开(公告)日：2013-09-24
申请号：US12888781
申请日：2010-09-23
申请人： Dirk Siepe , Thomas Gutt , Roman Roth
发明人： Dirk Siepe , Thomas Gutt , Roman Roth
IPC分类号： H01L21/31 , H01L21/44
CPC分类号： H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05669 , H01L2224/45015 , H01L2224/45124 , H01L2224/4847 , H01L2224/4851 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48757 , H01L2224/48764 , H01L2224/48769 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01202 , H01L2924/04941 , H01L2924/04953 , H01L2924/10253 , H01L2924/10272 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/2076 , H01L2924/01081 , H01L2924/00 , H01L2924/013 , H01L2924/01015 , H01L2924/01007 , H01L2924/01006
摘要： A bonding connection between a bonding wire and a power semiconductor chip is disclosed. The power semiconductor chip has a semiconductor body arranged in which is an active cell region with a multiplicity of cells arranged one following the other in a lateral direction and connected electrically in parallel. The semiconductor body has a surface portion arranged above the active cell region in a vertical direction perpendicular to the lateral direction. Applied to the surface portion is a metallization layer onto which a bonding wire is bonded. The bonding wire comprises an alloy containing at least 99% by weight aluminum and at least one further alloying constituent. The aluminum has a grain structure with a mean grain size which is less than 2 μm.
摘要翻译：公开了接合线和功率半导体芯片之间的接合连接。功率半导体芯片具有半导体本体，该半导体主体是具有多个单元的活性单元区域，多个单元沿横向依次排列并联，并联电连接。半导体本体具有在垂直于横向方向的垂直方向上布置在活性单元区域上方的表面部分。施加到表面部分的是金属化层，其上粘合有接合线。接合线包括含有至少99重量％的铝和至少一种另外的合金成分的合金。铝具有平均粒径小于2μm的颗粒结构。

8. 发明授权

US07851913B2 Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart 有权
标题翻译：半导体器件包括具有第一金属层的功率器件和横向隔开的第二金属层
公开(公告)号：US07851913B2
公开(公告)日：2010-12-14
申请号：US11602024
申请日：2006-11-20
申请人： Thomas Gutt , Dirk Siepe , Thomas Laska , Michael Melzl , Matthias Stecher , Roman Roth
发明人： Thomas Gutt , Dirk Siepe , Thomas Laska , Michael Melzl , Matthias Stecher , Roman Roth
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/85 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05166 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/29101 , H01L2224/29111 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48458 , H01L2224/4847 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48757 , H01L2224/48764 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48857 , H01L2224/48864 , H01L2224/838 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/20752 , H01L2924/2076 , H01L2924/351 , H01L2924/00014 , H01L2924/04953 , H01L2924/00 , H01L2924/3512 , H01L2224/48824 , H01L2224/48657 , H01L2924/00015
摘要： A semiconductor device exhibits a first metal layer, made of a first metal, with at least one contiguous subsection. At least one second metal layer, made of a second metal, is placed on the contiguous subsection of the first metal layer. The second metal is harder than the first metal. The second metal layer is structured to form at least two layer regions, which are disposed on the contiguous subsection of the first metal layer. The second metal exhibits a boron-containing or phosphorus-containing metal or a boron-containing or phosphorus-containing metal alloy.
摘要翻译：半导体器件具有由第一金属制成的具有至少一个连续部分的第一金属层。由第二金属制成的至少一个第二金属层被放置在第一金属层的相邻子部分上。第二种金属比第一种金属更硬。第二金属层被构造成形成至少两个层区，它们设置在第一金属层的相邻子部分上。第二金属表现出含硼或含磷金属或含硼或含磷金属合金。

9. 发明申请

US20100018462A1 METHOD FOR OXIDIZING A LAYER, AND ASSOCIATED HOLDING DEVICES FOR A SUBSTRATE 有权
标题翻译：用于氧化层的方法以及用于衬底的相关保持装置
公开(公告)号：US20100018462A1
公开(公告)日：2010-01-28
申请号：US12573394
申请日：2009-10-05
申请人： Hin-Yiu Chung , Thomas Gutt
发明人： Hin-Yiu Chung , Thomas Gutt
IPC分类号： B05C11/00
CPC分类号： H01L21/3247 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/31666 , H01L21/3228 , H01L21/67115 , H01L21/68735 , H01S5/18311 , Y10S438/94
摘要： A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.
摘要翻译：提出了一种保持装置，其中在单衬底工艺中处理待氧化的层。处理期间的处理温度直接记录在基板或基板的保持装置上。该方法包括将在衬层的边缘区域中被覆盖的未被覆盖的层的衬底引入到加热装置中，将氧化气体传递到衬底上，将衬底加热到处理温度，该过程温度在通过保持基板的保持装置的温度进行处理，并且在处理期间将基板温度控制到期望的温度或温度曲线。

10. 发明授权

US07615499B2 Method for oxidizing a layer, and associated holding devices for a substrate 有权
标题翻译：用于氧化层的方法以及用于衬底的相关保持装置
公开(公告)号：US07615499B2
公开(公告)日：2009-11-10
申请号：US10522505
申请日：2003-07-26
申请人： Hin-Yiu Chung , Thomas Gutt
发明人： Hin-Yiu Chung , Thomas Gutt
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3247 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/31666 , H01L21/3228 , H01L21/67115 , H01L21/68735 , H01S5/18311 , Y10S438/94
摘要： A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of a holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.
摘要翻译：提出了一种方法，其中在单衬底工艺中处理待氧化的层。处理期间的处理温度直接记录在基板或基板的保持装置上。该方法包括将在衬层的边缘区域中未被覆盖的被氧化层的衬底引入加热装置中，将氧化气体通入衬底，将衬底加热到处理温度通过保持基板的保持装置的温度进行处理，并且在处理期间将基板温度控制到期望的温度或温度曲线。

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