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41. 发明授权

US07112243B2 Method for producing Group III nitride compound semiconductor 有权
标题翻译：生产III族氮化物化合物半导体的方法
公开(公告)号：US07112243B2
公开(公告)日：2006-09-26
申请号：US10200586
申请日：2002-07-23
申请人： Masayoshi Koike , Shiro Yamazaki
发明人： Masayoshi Koike , Shiro Yamazaki
IPC分类号： C30B29/38 , H01L21/36
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor, which method permits only minimal reaction of the semiconductor with a hetero-substrate during epitaxial growth and induces no cracks in the Group III nitride compound semiconductor even when the semiconductor is cooled to room temperature. The method includes a buffer layer formation step for forming a gas-etchable buffer layer on the hetero-substrate, and a semiconductor formation step for epitaxially growing the Group III nitride compound semiconductor on the buffer layer through a vapor phase growth method, wherein at least a portion of the buffer layer is gas-etched during or after the semiconductor formation step.
摘要翻译：本发明提供了一种制造III族氮化物化合物半导体的方法，该方法在外延生长期间仅允许半导体与异质衬底的反应最小，并且即使当半导体被冷却到第三族氮化物半导体时也不引起裂纹室内温度。该方法包括用于在异质衬底上形成气体可蚀刻缓冲层的缓冲层形成步骤，以及用于通过气相生长法在缓冲层上外延生长III族氮化物半导体的半导体形成步骤，其中至少在半导体形成步骤期间或之后，缓冲层的一部分被气蚀刻。

42. 发明授权

US07045829B2 Light-emitting semiconductor device using Group III nitride compound 失效
标题翻译：使用III族氮化物的发光半导体器件
公开(公告)号：US07045829B2
公开(公告)日：2006-05-16
申请号：US08681412
申请日：1996-07-23
申请人： Masayoshi Koike , Shinya Asami
发明人： Masayoshi Koike , Shinya Asami
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01S5/3213 , H01S5/32341
摘要： A Group III nitride compound semiconductor includes a multiple layer structure having an emission layer between an n-type cladding layer and a p-type cladding layer. The n-type cladding layer may be below the emission layer, having been formed on another n-type layer which was formed over a buffer Layer and a sapphire substrate. The emission layer has a thickness which is wider than the diffusion length of holes within the emission layer. The n-type cladding layer is doped with a donor impurity and has a lattice constant Substantially equal to a lattice constant of the emission layer. The p-type cladding layer is doped with an acceptor impurity and has a forbidden band sufficiently wider than the forbidden band of the emission layer in ordor to confine electrons injected into the emission layer.
摘要翻译： III族氮化物化合物半导体包括在n型包覆层和p型包覆层之间具有发射层的多层结构。 n型覆层可以在形成在缓冲层和蓝宝石衬底上的另一n型层上形成的发光层之下。发光层的厚度比发光层内的孔的扩散长度宽。 n型包覆层掺杂有施主杂质，其晶格常数基本上等于发光层的晶格常数。 p型覆层被掺杂有受主杂质，并且具有比限制发射层中的发射层的禁带宽度更宽的禁带，以限制注入到发射层中的电子。

43. 发明授权

US07001790B2 Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity 失效
标题翻译：具有改善的发光强度的发光铝镓铟氮化物半导体器件
公开(公告)号：US07001790B2
公开(公告)日：2006-02-21
申请号：US09783035
申请日：2001-02-15
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
摘要翻译：发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3）（n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中，具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga）在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。镍电极（7,8）分别连接到p层（6）和n + +层（4）。一个凹槽（9）使电极（7,8）电绝缘。选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

44. 发明授权

US06979584B2 Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device 失效
标题翻译：制备III族氮化物化合物半导体和III族氮化物化合物半导体器件的方法
公开(公告)号：US06979584B2
公开(公告)日：2005-12-27
申请号：US10168617
申请日：2000-12-21
申请人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu
发明人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01L33/06 , H01L33/16 , H01L33/22 , H01L33/32 , H01S5/323 , H01S5/343
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01L33/025 , H01S5/34333
摘要： A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/post. Thus, a second Group III nitride compound layer 32 can be epitaxially grown, vertically and laterally, from a top surface of the post and a sidewall/sidewalls of the trench serving as a nucleus for epitaxial growth, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer 31 can be prevented in the upper portion of the second Group III nitride compound semiconductor 32 that is formed through lateral epitaxial growth. As a result, a region having less threading dislocations is formed at the buried trench.
摘要翻译：蚀刻第一III族氮化物化合物半导体层31，从而形成诸如点状，条状或栅格状结构的岛状结构，以提供沟槽/柱。因此，可以从柱的顶表面和用作外延生长的核的沟槽的侧壁/侧壁外延生长第二III族氮化物化合物层32，从而埋入沟槽并且也生长该层在垂直方向。在这种情况下，可以通过横向外延生长形成的第二III族氮化物半导体32的上部阻止在第一III族氮化物化合物半导体层31中包含的穿透位错的传播。结果，在埋入沟槽处形成具有较少穿透位错的区域。

45. 发明授权

US06946370B2 Semiconductor crystal producing method 有权
标题翻译：半导体晶体制造方法
公开(公告)号：US06946370B2
公开(公告)日：2005-09-20
申请号：US10488083
申请日：2002-08-05
申请人： Masayoshi Koike , Hiroshi Watanabe
发明人： Masayoshi Koike , Hiroshi Watanabe
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , H01L21/20
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406
摘要： In a separation layer removing process α, temperature in a reaction chamber (heat treatment temperature TX) is raised to about 1000° C. and a separation layer A is evaporated through thermal decomposition, to thereby separate about 10 μm in thickness of protection layer B from a base substrate side (a sapphire substrate 101 comprising a buffer layer 102). Because decomposition temperature of the separation layer A is higher than growth temperature of the protection layer B (about 650° C.) and lower than growth temperature of the semiconductor crystal C (about 1000° C.), the separation layer A vanishes (evaporates) by thermal decomposition, which generates this separation process. Accordingly, a semiconductor crystal having a cross sectional structure shown in FIG. 2B is obtained. By employing the protection layer B which is independent from the base substrate side as another crystal growth substrate, dislocations and cracks may not be generated by stress owing to difference of lattice constants or difference of thermal expansion coefficients, and a semiconductor crystal layer C (GaN single crystal) of high quality can be obtained.
摘要翻译：在分离层去除方法α中，将反应室中的温度（热处理温度T×X）升高至约1000℃，通过热分解蒸发分离层A，从而分离约保护层B的厚度为10μm，从基底侧（包括缓冲层102的蓝宝石衬底101）。由于分离层A的分解温度高于保护层B的生长温度（约650℃）且低于半导体晶体C的生长温度（约1000℃），所以分离层A消失（蒸发）通过热分解，产生这种分离过程。因此，具有图1所示的横截面结构的半导体晶体。 2 B。通过采用独立于基底侧的保护层B作为另一种晶体生长衬底，由于晶格常数或热膨胀系数的差异而导致的应力不会产生位错和裂纹，并且半导体晶体层C（GaN 单晶）。

46. 发明授权

US06821800B2 Semiconductor light-emitting device and manufacturing method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06821800B2
公开(公告)日：2004-11-23
申请号：US10326398
申请日：2002-12-23
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

47. 发明授权

US06645295B1 Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor 有权
标题翻译：制造III族氮化物化合物半导体的方法和使用III族氮化物化合物半导体的发光装置
公开(公告)号：US06645295B1
公开(公告)日：2003-11-11
申请号：US09566917
申请日：2000-05-09
申请人： Masayoshi Koike , Seiji Nagai
发明人： Masayoshi Koike , Seiji Nagai
IPC分类号： C30B2504
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A buffer layer 2 made of aluminum nitride (AlN) is formed on a substrate 1 and is formed into an island pattern such as a dot pattern, a striped pattern, or a grid pattern such that substrate-exposed portions are formed in a scattered manner. A group III nitride compound semiconductor 3 grows epitaxially on the buffer layer 2 in a longitudinal direction, and grows epitaxially on the substrate-exposed portions in a lateral direction. As a result, a group III nitride compound semiconductor 3 which has little or no feedthrough dislocations 4 is obtained. Because the region where the group III nitride compound semiconductor 3 grows epitaxially in a lateral direction, on region 32, has excellent crystallinity, forming a group III nitride compound semiconductor device on the upper surface of the region results in improved device characteristics.
摘要翻译：在基板1上形成由氮化铝（AlN）构成的缓冲层2，形成为点阵图案，条纹图案或格栅图案等岛状图案，使得基板曝光部分以散射方式形成。 III族氮化物化合物半导体3沿纵向在外延生长在缓冲层2上，并沿横向在外延生长在基板暴露部分上。结果，得到几乎没有或没有穿穿位错4的III族氮化物化合物半导体3。由于III族氮化物半导体3在横向上外延生长的区域，在区域32上具有优异的结晶性，所以在该区域的上表面上形成III族氮化物化合物半导体器件导致改进的器件特性。

48. 发明授权

US06620643B1 Light-emitting device using group III nitride compound semiconductor 失效
标题翻译：使用III族氮化物化合物半导体的发光装置
公开(公告)号：US06620643B1
公开(公告)日：2003-09-16
申请号：US09631980
申请日：2000-08-03
申请人： Masayoshi Koike
发明人： Masayoshi Koike
IPC分类号： H01L2100
CPC分类号： H01L33/08 , H01L33/06 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/00014
摘要： A group III nitride compound semiconductor light-emitting device provides a multiple quantum well (MQW) active layer formed on an intermediate layer. The MQW active layer may include, for example, five semiconductor layers having a thickness of approximately 500 Å. The five layers of the MQW active layer may comprise two gallium nitride (GaN) barrier layers each having a thickness of approximately 100 Å and three well layers having different emission wavelengths. The barrier layers and the well layers are stacked alternately. The three well layers may include, for example, an Al0.1In0.9N red-light-emitting well layer having a thickness of approximately 20 Å and doped with impurities (zinc (Zn) and silicon (Si)), a non-doped In0.2Ga0.8N green-light-emitting well layer having a thickness of approximately 50 Å and a non-doped In0.05Ga0.95N blue-light-emitting well layer having a thickness of approximately 30 Å, wherein the three well layers are stacked in the order given.
摘要翻译： III族氮化物化合物半导体发光器件提供形成在中间层上的多量子阱（MQW）有源层。 MQW有源层可以包括例如厚度约为500埃的五个半导体层。 MQW有源层的五层可以包括各自具有大约厚度的两个氮化镓（GaN）阻挡层和具有不同发射波长的三个阱层。阻挡层和阱层交替堆叠。三个阱层可以包括例如厚度约为20埃的掺杂有杂质（锌（Zn）和硅（Si））的Al 0.1 In 0.9 N红色发光阱层，非掺杂具有厚度约为50埃的In 0.2 Ga 0.8 N绿色发光阱层和厚度约为30埃的未掺杂的In0.05Ga0.95N蓝色发光阱层，其中三个阱层是按照给定的顺序堆放。

49. 发明授权

US06552376B1 Group III nitride compound semiconductor device 有权
公开(公告)号：US06552376B1
公开(公告)日：2003-04-22
申请号：US09654492
申请日：2000-09-01
申请人： Masayoshi Koike , Shiro Yamasaki
发明人： Masayoshi Koike , Shiro Yamasaki
IPC分类号： H01L31072
CPC分类号： H01L33/32 , B82Y20/00 , H01L31/03046 , H01S5/021 , H01S5/0211 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34333 , H01S2304/04 , Y02E10/544
摘要： Aluminum gallium nitride (AlxGa1−xN, 0

50. 发明授权

US06541293B2 Semiconductor light-emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06541293B2
公开(公告)日：2003-04-01
申请号：US10158830
申请日：2002-06-03
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2 >0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

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